Showing papers in "Diamond and Related Materials in 1995"

TL;DR: In this article, the authors present an updated and systematic overview of the recent developments in studies on nucleation processes in diamond CVD, and the nucleation enhancement methods developed to date are summarized.

TL;DR: In this article, the authors investigated the stability of diamond-like carbon (DLC) films at elevated temperature and high humidity using Raman spectroscopy and thermal desorption analysis.

TL;DR: In this article, molecular orbital diagrams and band calculations are used to describe the electronic structure of various CN bonding configurations and account for the doping mechanism. But the doping efficiency is estimated to be about 1%.

TL;DR: In this paper, the disorder potential of diamond-like forms of amorphous carbon and hydrogenated carbon was analyzed and it was argued that some form of sp 2 clustering is required to account for the high luminescence efficiency of wide gap a-C:H.

TL;DR: In this article, a tri-layer diamond/tungsten carbide and tungsten buffer layer was used to enhance the adhesion of steel with high compressive stress, σ ≈ 7 GPa.

TL;DR: In this article, the growth mechanisms of DLC films from C+ ions were investigated using three main characterization methods: atomic force microscopy (AFM), Rutherford backscattering spectroscopy (RBS) combined with profilometry for density measurements, and EELS for analysis of the bonding configuration (sp3sp2).

TL;DR: In this paper, the authors reviewed the tribological properties of carbon-like carbon (DLC), diamond and more novel carbonaceous coatings and discussed their tribological performance in light of their adhesion, residual stress and hardness.

TL;DR: In this paper, a sputter model for ion-assisted boron nitride (BN) deposition has been developed, which is used as a guideline in order to give an overview on c-BN deposition.

TL;DR: Amorphous hydrogenated diamond-like carbon (DLC) coatings containing a small amount of titanium have been deposited onto AISI 420 steel substrates by unbalanced magnetron sputtering as mentioned in this paper.

TL;DR: A review of common stress measurement techniques as related to CVD diamond is presented in this paper, where a correction to the commonly applied Stoney thin film equation for the substrate curvature technique is presented for coatings with a large stiffness mismatch with the substrate.

TL;DR: Using the microwave plasma CVD method, the authors have grown high-quality homoepitaxial diamond films on (100)-cut diamond substrates using a sputtered SiO2 mask.

TL;DR: Boron and nitrogen-doped diamond-like amorphous carbon (DLC) films were prepared by alternating direct deposition of low energy mass-separated 12C+ and dopant ions as discussed by the authors.

TL;DR: In this paper, boron incorporation rate in textured diamond films was found to be two orders of magnitude lower than for textured textured films, which can be explained by a growth sectordependent borone incorporation.

TL;DR: In this paper, the nucleation and growth of c-BN films by means of the inductively coupled plasma technique was investigated. But the results were limited to two sets of experiments: deposition as a function of the bias voltage V B and experiments with varying deposition times.

TL;DR: In vitro studies have been carried out using three cell culture lines, to investigate the biocompatibility of diamond-like carbon (DLC) coated discs as discussed by the authors, with an intermediate layer of amorphous hydrogenated silicon (a-Si:H) to improve the adhesion of the carbon layer.

TL;DR: In this paper, chemical vapour deposition growth of nanocrystalline (grain size 30-50 nm) diamond films of 100 nm to 2 μm thickness in methane-rich mixtures was reported.

TL;DR: In this article, the 1.681 eV optical center in a homoepitaxial CVD diamond film at the very narrow photoluminescence (PL) linewidth of 0.2 meV was studied under uniaxial stress parallel to 〈100〉 and in magnetic fields along the three main crystal directions.

TL;DR: Amorphous hydrogenated carbon films were characterized by IR and optical spectroscopy, confirming a transition from polymer-like to diamond-like (DLC) material with increasing self bias as mentioned in this paper.

TL;DR: In this article, an investigation of the electrical properties of boron-doped homoepitaxial diamond films and the metal-oxide-diamond gate structure was performed.

TL;DR: In this article, the residual stress in microwave plasma-enhanced CVD diamond film was analyzed using a Raman spectrometer with micrometer spatial resolution, which enables effective study of isolated crystals grown in the same deposition run.

TL;DR: In this article, a set of amorphous carbon nitride (a-C:N) films with different nitrogen contents were analyzed and the role of nitrogen is to reduce the disordered sp 2 phase and the sp 3 sp 2 ratio.

TL;DR: In this article, molecular beam mass spectrometry was used to measure the gas-phase composition near a growing diamond surface in a microwave plasma-assisted chemical vapor deposition reactor and the dependencies of the gas composition on changes in: (1) the carbon mole fraction in the reactor feed, Xc; (2) the identity of the inlet carbon source (CH, versus C,H); and (3) the surface temperature, T,, were studied.

TL;DR: In this paper, the surface vibrations of adsorbed hydrogen were investigated on homoepitaxially grown boron-doped single-crystal (001) and (111) films.

TL;DR: In this paper, it was shown that a set of almost perfectly matched diamond plates can be overgrown by one single crystal layer of chemical vapour deposition diamond, which opens a route to the production of large-area diamond plates.

TL;DR: In this article, a numerical model for a diamond thin film deposition with a single-mode excited cavity was developed using the finite difference time domain (FDTD) method to solve Maxwell's equations.

TL;DR: In this paper, a theoretical model for the interaction of excimer laser radiation with rough polycrystalline CVD diamond films is presented, showing the influence of angle of incidence, irradiation intensity and number of laser pulses.

TL;DR: In this paper, high purity (natural type IIa) diamonds were treated by the cold implantation rapid annealing (CIRA) process using extremely low dose (about 10 4 times lower than usual), and damage-equivalent, carbon, boron and phosphorus ion implantations.

TL;DR: In this paper, the phosphorus concentration in the gas phase was varied between 330 and 5280 ppm PH 3 CH 4, leading to important modifications in the diamond morphology, growth rate, growth orientation, film quality and homogeneity.

TL;DR: In this paper, the authors describe the etching of polycrystalline diamond films by reactive ion etching (RIE) in an O2 plasma, and show that columnar structures are created on the etched surface.

TL;DR: In this article, Fourier transform IR spectroscopy was used to characterize polycrystalline and homoepitaxial diamond films deposited from 12C- and 13C-containing gases.