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JournalISSN: 0018-9197

IEEE Journal of Quantum Electronics 

About: IEEE Journal of Quantum Electronics is an academic journal. The journal publishes majorly in the area(s): Laser & Semiconductor laser theory. It has an ISSN identifier of 0018-9197. Over the lifetime, 13846 publication(s) have been published receiving 458736 citation(s).
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13,816 citations

Journal ArticleDOI
Mansoor Sheik-Bahae1, Ali A. Said1, Tai-Huei Wei1, David J. Hagan1  +1 moreInstitutions (1)
Abstract: A sensitive single-beam technique for measuring both the nonlinear refractive index and nonlinear absorption coefficient for a wide variety of materials is reported. The authors describe the experimental details and present a comprehensive theoretical analysis including cases where nonlinear refraction is accompanied by nonlinear absorption. In these experiments, the transmittance of a sample is measured through a finite aperture in the far field as the sample is moved along the propagation path (z) of a focused Gaussian beam. The sign and magnitude of the nonlinear refraction are easily deduced from such a transmittance curve (Z-scan). Employing this technique, a sensitivity of better than lambda /300 wavefront distortion is achieved in n/sub 2/ measurements of BaF/sub 2/ using picosecond frequency-doubled Nd:YAG laser pulses. >

7,137 citations

Journal ArticleDOI
Abstract: The known optical properties (absorption, scattering, total attenuation, effective attenuation, and/or anisotropy coefficients) of various biological tissues at a variety of wavelengths are reviewed. The theoretical foundations for most experimental approaches are outlined. Relations between Kubelka-Munk parameters and transport coefficients are listed. The optical properties of aorta, liver, and muscle at 633 nm are discussed in detail. An extensive bibliography is provided. >

2,760 citations

Journal ArticleDOI
Michael J. Adams1Institutions (1)

2,432 citations

Journal ArticleDOI
Richard A. Soref1, Brian R. BennettInstitutions (1)
Abstract: A numerical Kramers-Kronig analysis is used to predict the refractive-index perturbations produced in crystalline silicon by applied electric fields or by charge carriers. Results are obtained over the 1.0-2.0 \mu m optical wavelength range. The analysis makes use of experimental electroabsorption spectra and impurity-doping spectra taken from the literature. For electrorefraction at the indirect gap, we find \Delta n = 1.3 \times 10^{5} at \lambda = 1.07 \mu m when E = 10^{5} V/cm, while the Kerr effect gives \Delta n = 10^{-6} at that field strength. The charge-carrier effects are larger, and a depletion or injection of 1018carriers/cm3produces an index change of \pm1.5 \times 10^{-3} at \lambda = 1.3 \mu m.

2,428 citations

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