Showing papers in "IEEE Journal of Quantum Electronics in 2005"
TL;DR: In this paper, the authors studied terahertz emission from interdigitated finger photomixers coupled to planar antenna structures using both pulsed and continuous-wave excitation.
Abstract: We have studied terahertz emission from interdigitated finger photomixers coupled to planar antenna structures. Using both pulsed and continuous-wave excitation, polarization measurements reveal that the antenna design dominates the properties of the radiated output at frequencies below 0.6 THz, while the efficiency at higher frequencies is additionally dependent on the design of the photomixer fingers. We have produced terahertz maps of the device, characterizing the photomixer by measuring the generated power as a function of the excitation position. Together, these measurements have allowed us to understand better the distinct roles of the photomixer and antenna in emission at different frequencies and, hence, independently optimize these components.
222 citations
TL;DR: In this article, the chaotic dynamics of semiconductor lasers subject to either optical or electrooptical feedback modeled by Lang-Kobayashi and Ikeda equations is characterized for secure optical communications based on chaos encryption.
Abstract: We characterize the chaotic dynamics of semiconductor lasers subject to either optical or electrooptical feedback modeled by Lang-Kobayashi and Ikeda equations, respectively. This characterization is relevant for secure optical communications based on chaos encryption. In particular, for each system we compute as a function of tunable parameters the Lyapunov spectrum, Kaplan-Yorke dimension and Kolmogorov-Sinai entropy.
196 citations
TL;DR: In this paper, the use of crystalline heatspreaders to improve thermal management in optically pumped vertical-external-cavity surface-emitting lasers was studied via finite-element analysis.
Abstract: The use of crystalline heatspreaders to improve thermal management in optically pumped vertical-external-cavity surface-emitting lasers is studied via finite-element analysis. The required properties of a heatspreader are examined and the effect on heat flow is discussed, as are thermal lensing effects. The advantages of diamond heatspreaders are highlighted. The power-scaling potential is compared to other approaches. Heatspreaders are found to be promising, particularly for use with low thermal conductivity semiconductors.
124 citations
TL;DR: In this paper, a high-level model is proposed to represent the self-mixing phenomenon and to simplify the solution of nonlinear equations involved in this problem, which will allow the use of powerful and standard simulation tools such as Spice, VHDL-AMS or MATLAB/Simulink to develop new methods for signal processing of optical feedback interferometers.
Abstract: The spectral properties of a laser diode are modified when the optical beam is back-scattered into the active cavity of the laser. Based on the use of this optical feedback, the self-mixing effect has been demonstrated to be suitable for sensing applications. This is an emerging technique enabling notably displacement, distance and/or velocity measurements to be performed. However, the self-mixing signal shape is strongly modified by the strength of the back-scattering and by nonlinear phenomena governing the global behavior of the laser diode. This makes signal processing rather challenging. In this paper, a new high-level model is proposed to represent the self-mixing phenomenon and to simplify the solution of nonlinear equations involved in this problem. This model is represented by schematic block diagrams commonly used for the description of complex systems in the domains of nonlinear mechanics, telecommunications, sensors, actuators, etc. This approach will allow the use of powerful and standard simulation tools such as Spice, VHDL-AMS or MATLAB/Simulink to develop new methods for signal processing of optical feedback interferometers, notably in the case of displacements measurements.
121 citations
TL;DR: In this paper, a theory for describing nonequilibrium dynamics in a semiconductor quantum-dot laser is presented, which is applied to a microcavity laser with a gain region consisting of an inhomogeneous distribution of quantum dots, a quantum well wetting layer, and injection pumped bulk regions.
Abstract: A theory for describing nonequilibrium dynamics in a semiconductor quantum-dot laser is presented. This theory is applied to a microcavity laser with a gain region consisting of an inhomogeneous distribution of quantum dots, a quantum-well wetting layer, and injection pumped bulk regions. Numerical results are presented and the effects of spectral hole burning, plasma heating, and many-body effects are analyzed.
102 citations
TL;DR: In this article, a novel device-resonant tunneling quantum-dot infrared photodetector has been investigated theoretically and experimentally, where the transport of dark current and photocurrent are separated by the incorporation of a double barrier resonant tunnel heterostructure with each quantum dot layer of the device.
Abstract: A novel device-resonant tunneling quantum-dot infrared photodetector-has been investigated theoretically and experimentally. In this device, the transport of dark current and photocurrent are separated by the incorporation of a double barrier resonant tunnel heterostructure with each quantum-dot layer of the device. The devices with In/sub 0.4/Ga/sub 0.6/As-GaAs quantum dots are grown by molecular beam epitaxy. We have characterized devices designed for /spl sim/6 /spl mu/m response, and the devices also exhibit a strong photoresponse peak at /spl sim/17 /spl mu/m at 300 K due to transitions from the dot excited states. The dark currents in the tunnel devices are almost two orders of magnitude smaller than those in conventional devices. Measured values of J/sub dark/ are 1.6/spl times/10/sup -8/ A/cm/sup 2/ at 80 K and 1.55 A/cm/sup 2/ at 300 K for 1-V applied bias. Measured values of peak responsivity and specific detectivity D/sup */ are 0.063 A/W and 2.4/spl times/10/sup 10/ cm/spl middot/Hz/sup 1/2//W, respectively, under a bias of 2 V, at 80 K for the 6-/spl mu/m response. For the 17-/spl mu/m response, the measured values of peak responsivity and detectivity at 300 K are 0.032 A/W and 8.6/spl times/10/sup 6/ cm/spl middot/Hz/sup 1/2//W under 1 V bias.
82 citations
TL;DR: In this paper, a fully microscopic approach is used to compute the losses in semiconductor lasers due to spontaneous emission and Auger recombination, based on the semiconductor-Bloch equations and generalized quantum Boltzmann type scattering equations.
Abstract: A fully microscopic approach is used to compute the losses in semiconductor lasers due to spontaneous emission and Auger recombination. The model is based on the semiconductor-Bloch equations and generalized quantum-Boltzmann type scattering equations in the second Born-Markov approximation. As input the theory only needs the structural layout and fundamental bulk-bandstructure parameters. It is demonstrated that such a comprehensive model that calculates gain/absorption, spontaneous emission and Auger processes on the same microscopic level can reliably predict these usually dominant loss processes. Examples of the results are compared to measurements on lasers in the 1.3-1.5 /spl mu/m range demonstrating very good agreement without empirical fitting.
81 citations
TL;DR: In this article, a perturbative theory is developed to describe the frequency comb output of a femtosecond fiber laser, in particular for a solitonic fiber laser.
Abstract: The output of a femtosecond fiber laser will form a frequency comb that can be phase-locked through feedback to the cavity length and pump power. A perturbative theory is developed to describe this frequency comb output, in particular for a solitonic fiber laser. The effects of resonant dispersion, saturation of the self-amplitude modulation, cavity loss, third-order dispersion, Raman scattering, self-phase modulation, and self-steepening on the spacing and offset of the fiber-laser frequency comb are given. The mechanisms by which the pump power, cavity length and cavity loss control the frequency comb spacing and offset are identified. Transfer functions are derived for the comb response to change in cavity length, pump power or cavity loss. This theory can potentially be applied to other frequency comb sources as well.
80 citations
TL;DR: In this paper, a tunable diode laser system capable of scanning the entire line shape of the (3,4) hyperfine transition of iodine provided the gain measurements, where the O/sub 2/(a/sup 1/spl Delta/) was produced in a flowing electric discharge.
Abstract: Laser action at 1315 nm on the I(/sup 2/P/sub 1/2/)/spl rarr/I(/sup 2/P/sub 3/2/) transition of atomic iodine is conventionally obtained by a near-resonant energy transfer from O/sub 2/(a/sup 1//spl Delta/) which is produced using wet-solution chemistry. The system difficulties of chemically producing O/sub 2/(a/sup 1//spl Delta/) have motivated investigations into gas phase methods to produce O/sub 2/(a/sup 1//spl Delta/) using low-pressure electric discharges. We report on the path that led to the measurement of positive gain on the 1315-nm transition of atomic iodine where the O/sub 2/(a/sup 1//spl Delta/) was produced in a flowing electric discharge. Atomic oxygen was found to play both positive and deleterious roles in this system, and as such the excess atomic oxygen was scavenged by NO/sub 2/ to minimize the deleterious effects. The discharge production of O/sub 2/(a/sup 1//spl Delta/) was enhanced by the addition of a small proportion of NO to lower the ionization threshold of the gas mixture. The electric discharge was upstream of a continuously flowing supersonic cavity, which was employed to lower the temperature of the flow and shift the equilibrium of atomic iodine more in favor of the I(/sup 2/P/sub 1/2/) state. A tunable diode laser system capable of scanning the entire line shape of the (3,4) hyperfine transition of iodine provided the gain measurements.
76 citations
TL;DR: In this paper, the authors proposed an approach based on the analysis of the signals observed in an optical feedback self-mixing interferometric system to measure the linewidth enhancement factor /spl alpha/ and the optical feedback level factor C in a semiconductor laser with an external cavity.
Abstract: The paper presents a practical approach for measuring the linewidth enhancement factor /spl alpha/ of semiconductor lasers and the optical feedback level factor C in a semiconductor laser with an external cavity. The proposed approach is based on the analysis of the signals observed in an optical feedback self-mixing interferometric system. The parameters /spl alpha/ and C are estimated using a gradient-based optimization algorithm that achieves best data-to-theoretical model match. The effectiveness and accuracy of the method has been confirmed and tested by computer simulations and experiments, which show that the proposed approach is able to estimate /spl alpha/ and C with an accuracy of 6.7% and 4.63%, respectively.
75 citations
TL;DR: In this paper, a pump-probe experiment with an optical amplifier with an active layer of self-organized quantum dots (QDs) emitting near 1.3 /spl mu/m was performed and a low amplitude-phase coupling was theoretically predicted and demonstrated in the experiments.
Abstract: Ultrafast gain dynamics in an optical amplifier with an active layer of self-organized quantum dots (QDs) emitting near 1.3 /spl mu/m is characterized experimentally in a pump-probe experiment and modeled theoretically on the basis of QD Maxwell-Bloch equations. Experiment and theory are in good agreement and show ultrafast subpicoseconds gain recovery followed by a slower 5 ps recovery. This behavior is found to be mainly caused by longitudinal optical phonon scattering and strongly dependents on electronic structure and confinement energy of the dots. A low amplitude-phase coupling (/spl alpha/ factor) is theoretically predicted and demonstrated in the experiments. The fundamental analysis reveals the underlying physical processes and indicates limitations to QD-based devices.
TL;DR: In this article, a multimode model was developed for linear and nonlinear interactions between modes in an SRL lasing unidirectionally, including population pulsation, spectral hole burning, carrier heating, and four-wave mixing effects.
Abstract: In order to understand and explain recently reported nonlinear behaviors in semiconductor ring lasers (SRLs) and to further design novel functional devices, a multimode model has been developed for linear and nonlinear interactions between modes in an SRL lasing unidirectionally. The model includes population pulsation, spectral hole burning, carrier heating, and four-wave mixing effects. Heterodyne detection has been used to make high-resolution measurements of the lasing spectra of an SRL in which the individual resonances associated with the coupled eigenvalues can be observed. By fitting these high-resolution spectra to the model, we have extracted a number of key parameters characterizing the coupling mechanisms in the device and the semiconductor gain medium. Using these parameters, the model generates device characteristics in very good agreement with experimental results, which validate its use for future device design and optimization.
TL;DR: In this paper, a multiple quasi-phase-matched wavelength converter based on the continuous phase modulation of a /spl chi/sup (2)/ grating for use in variable wavelength conversion was proposed.
Abstract: We propose a new multiple quasi-phase-matched wavelength converter based on the continuous phase modulation of a /spl chi//sup (2)/ grating for use in variable wavelength conversion. A numerical study shows that the proposed device exhibits a high conversion efficiency, flexible design, and robust fabrication tolerance. A waveguide device fabricated by annealed proton exchange agrees well with the numerical design. Fine-tuning the device enabled us to demonstrate variable wavelength conversion between signals on the standard optical frequency grid. Using the device, we also demonstrated fast (<100 ps) wavelength switching of 4-channel 40-Gb/s signals. The obtained results clearly show that the proposed multiple quasi-phase-matched devices will be useful when constructing future flexible photonic networks.
TL;DR: In this paper, a multirecipe Si-ion-implanted SiO/sub 2/ (SiO/Sub 2/:Si/sup +/) film on Si substrate is demonstrated.
Abstract: White-light and blue-green electroluminescence (EL) of a multirecipe Si-ion-implanted SiO/sub 2/ (SiO/sub 2/:Si/sup +/) film on Si substrate are demonstrated. The blue-green photoluminescence (PL) is enhanced by the reaction of O/sub 3//spl equiv/Si-O-Si/spl equiv/O/sub 3//spl rarr/O/sub 3//spl equiv/Si-Si/spl equiv/O/sub 3/+O/sub interstitial/ during Si implantation. After annealing at 1100/spl deg/C for 180 min, the luminescence at both 415 and 455 nm is markedly enhanced by the complete activation of radiative defects, such as weak oxygen bonds, neutral oxygen vacancies (NOVs), and the precursors of nanocrystallite Si (E'/sub /spl delta// centers). Absorption spectroscopy and electron paramagnetic resonance confirm the existence of NOVs and E'/sub /spl delta// centers. The slowly rising E'/sub /spl delta//-related PL intensity reveals that the formation of nanocrystallite Si (nc-Si) requires longer annealing times and suggests that the activation energy for diffusion of excess Si atoms is higher than that of other defects in ion implanted SiO/sub 2/. The EL from the Ag-SiO/sub 2/:Si/sup +//n-Si-Ag metal-oxide-semiconductor diode changes from deep blue to green as the driving current increase from 0.28 to 3 A. The maximum white-light luminescent power is up to 120 nW at a bias current of 1.25 A.
TL;DR: In this article, the authors demonstrate room-temperature lowthreshold current lasing action from electrically driven wavelength-scale high-quality photonic crystal lasers having large spontaneous emission factors by solving the theoretical and technical constraints laid upon by the additional requirement of the current injection.
Abstract: We demonstrate room-temperature low-threshold-current lasing action from electrically driven wavelength-scale high-quality photonic crystal lasers having large spontaneous emission factors by solving the theoretical and technical constraints laid upon by the additional requirement of the current injection. The ultrasmall cavity is electrically pulse pumped through a submicron-size semiconductor "wire" at the center of the mode with minimal degradation of the quality factor. In addition, to better utilize the low mobility of the hole, we employ a doping structure that is inverted from the conventional semiconductors. Rich lasing actions and their various characteristics are experimentally measured in the single-cell and three-cell photonic crystal cavities. Several relevant measurements are compared with three-dimensional finite-difference time-domain computations based on the actual fabricated structural parameters. The electrically driven photonic crystal laser, which is a small step toward a "practical" form of the single photon source, represents a meaningful achievement in the field of photonic crystal devices and photonic integrated circuits as well as of great interest to the quantum electrodynamics and quantum information communities.
TL;DR: In this article, the light-current, spectral, and far-field characteristics of quantum cascade lasers (QCLs) with seven different wavelengths in the /spl lambda/=4.3 to 6.3 /spl mu/m range were reported.
Abstract: We report the light-current (L-I), spectral, and far-field characteristics of quantum cascade lasers (QCLs) with seven different wavelengths in the /spl lambda/=4.3 to 6.3 /spl mu/m range. In continuous-wave (CW) mode, the narrow-stripe (/spl ap/13 /spl mu/m) epitaxial- side-up devices operated at temperatures up to 340 K, while at 295 K the CW output power was as high as 640 mW with a wallplug efficiency of 4.5%. All devices with /spl lambda//spl ges/4.7 /spl mu/m achieved room-temperature CW operation, and at T=200 K several produced powers exceeding 1 W with /spl ap/10% wallplug efficiency. The data indicated both spectral and spatial instabilities of the optical modes. For example, minor variations of the current often produced nonmonotonic hopping between spectra with envelopes as narrow as 5-10 nm or as broad as 200-250 nm. Bistable beam steering, by far-field angles of up to /spl plusmn/12/spl deg/ from the facet normal, also occurred, although even in extreme cases the beam quality never became worse than twice the diffraction limit. The observed steering is consistent with a theory for interference and beating between the two lowest order lateral modes. We also describe simulations of a wide-stripe photonic-crystal distributed-feedback QCL, which based on the current material quality is projected to emit multiple watts of CW power into a single-mode beam at T=200 K.
TL;DR: In this paper, the use of conventional and patterned sapphire substrates (PSSs) to fabricate InGaN-based near-ultraviolet (410 nm) light-emitting diodes (LEDs) was demonstrated.
Abstract: The use of conventional and patterned sapphire substrates (PSSs) to fabricate InGaN-based near-ultraviolet (410 nm) light-emitting diodes (LEDs) was demonstrated. The PSS was prepared using a periodic hole pattern (diameter: 3 /spl mu/m; spacing: 3 /spl mu/m) on the (0001) sapphire with different etching depths. From transmission-electron-microscopy and etch-pit-density studies, the PSS with an optimum pattern depth (D/sub h/=1.5 /spl mu/m) was confirmed to be an efficient way to reduce the thread dislocations in the GaN microstructure. It was found that the output power increased from 8.6 to 10.4 mW, corresponding to about 29% increases in the external quantum efficiency. However, the internal quantum efficiency (@ 20 mA) was about 36% and 38% for the conventional and PSS LEDs, respectively. The achieved improvement of the output power is not only due to the improvement of the internal quantum efficiency upon decreasing the dislocation density, but also due to the enhancement of the extraction efficiency using the PSS. Finally, better long-time reliability of the PSS LED performance was observed.
TL;DR: In this paper, the authors report the design and fabrication of high performance high power laser with emission wavelength from 800 to 1000 nm using a novel wafer structure, in which a graded V-shape layer was incorporated, to reduce the vertical far field (wafer growth direction) and to suppress higher order mode lasing.
Abstract: We report the design and fabrication of high performance high power lasers with emission wavelength from 800 to 1000 nm using a novel wafer structure, in which a graded V-shape layer was incorporated, to reduce the vertical far field (wafer growth direction) and to suppress higher order mode lasing. The structure offers the freedom to independently design the vertical far field and optical overlap with the quantum wells. An extremely low far field can be achieved, which still retains high optical overlap, allowing a low threshold current to be maintained. In addition, the structure can greatly enhance the laser kink-free power by suppressing or even completely eliminating higher order mode lasing, an extremely desirable property for high power single mode lasers.
TL;DR: In this article, a 2D photonic crystal (PC) directional couplers with a triangular lattice pattern of air holes in a planar dielectric slab is theoretically and experimentally analyzed.
Abstract: Two-dimensional (2-D) photonic crystal (PC) directional couplers (DCs) that have a triangular lattice pattern of air holes in a planar dielectric slab are theoretically and experimentally analyzed. Unlike the 2-D PC DC structure with a dielectric rod in air, which is frequently used in theoretical studies, more practical PC DCs tend to be multimode in nature and exhibit a large group velocity dispersion, thus creating decoupling points in the dispersion relation without any additional modifications to the structure. The multimode nature and large dispersion lead to interference which degrades the coupling properties. By inserting three rows of air holes between neighboring line-defect waveguides in order to separate them, we have successfully reduced the multimode region and obtained a single-mode region. In this case, the large dispersion allows the creation of a PC DC with wavelength selectivity and a coupling length as short as 30 a,/spl sim/10 /spl mu/m for a=345 nm, where a is the lattice constant. The transmission spectra obtained experimentally showed good agreement with the theory whereas their transmission ranges were restricted to those of bent waveguides. These results are encouraging for practical application to optical communications.
TL;DR: In this paper, the Muller boundary integral equation (MCEE) is used to transform a circular microcavity toward a square or a triangle to remove the degeneracy of certain whispering-gallery (WG) modes.
Abstract: Transformation of the whispering-gallery (WG)-modes in imperfect two-dimensional square and triangular microcavities with various degrees of deformation is studied by means of the Muller boundary integral equation technique. Continuous transformation of a circular microcavity, which supports double-degenerate WG-modes, toward a square or a triangle removes the degeneracy of certain WG-modes. The spectrum of the modes that split depends on the symmetry of the emerging microcavity: WG/sub 2m,n/-modes in case of a C/sub 4v/ symmetry (square) or WG/sub 3m,n/-modes in the case of C/sub 3v/ symmetry (triangle). In both cases, the modes with the highest Q-factors are nondegenerate modes with antisymmetrical field patterns. We estimate mode frequencies, quality factors and field distributions of practically achievable rather than "ideal" square and triangular microcavities, and compare the effect of various types of fabrication imperfections (corner sharpness, sidewall curvature and surface roughness) on their characteristics. Accurate study of the modal spectra enables us to confirm and explain previous observations, such as: 1) co-existence of the WG-like and volume modes in square microcavities; 2) the separation of the high-Q WG-like modes being twice that determined by the cavity length; and 3) much lower Q-factors of realistic concave-wall triangular microcavities than those of their ideal counterparts.
TL;DR: In this paper, the authors present a transfer matrix analysis of a two-dimensional (2D) filter to study its frequency response functions, and show that such a general 2D lattice network of lossless and symmetric resonators can approximate an ideal bandpass filter characterized by a flat-top box-like amplitude response without out-of-band sidelobes, and a linear phase response.
Abstract: We present a transfer matrix analysis of a two-dimensional (2-D) filter to study its frequency response functions. The (M/spl times/N) array consists of N independent columns of microring resonators side-coupled to two channel bus waveguides, with equal spacing between columns and each column consisting of M coupled resonators. We show that such a general 2-D lattice network of lossless and symmetric resonators can approximate an ideal bandpass filter characterized by a flat-top box-like amplitude response without out-of-band sidelobes, and a linear phase response. The bandwidth is determined by the coupling factor between resonators. The 2-D periodic structure exhibits nonoverlapping photonic bandgaps arising from the complementary transmission properties of the row and column arrays. The row array behaves as a distributed feedback grating giving rise to narrow bandgaps corresponding to the flat reflection passbands of the filter with out-of-band sidelobes. The column array, on the other hand, acts as a high-order coupled-cavities filter with broad bandgaps that overlap with the sidelobe regions, thereby effectively suppressing the sidelobes. The phase response is linear except near the band edges, where enhanced group delay limits the usable bandwidth of the filter to about 80%. The minimum size of the array required is about 3/spl times/10, but is ultimately limited by waveguide loss.
TL;DR: In this paper, the authors developed a novel description of electrically driven vertical-external-cavity surface-emitting semiconductor lasers (VECSELs) mode-locked by saturable absorber mirrors.
Abstract: We develop a novel description of electrically driven vertical-external-cavity surface-emitting semiconductor lasers (VECSELs) mode-locked by saturable absorber mirrors. Our approach is based on an analytical solution of the bidirectional traveling-wave equations for fundamental transverse mode operation. The resulting time-domain equations describe the evolution of the electric fields and carrier-densities at the quantum-well layers of the emitter and absorber structures which are coupled through delayed boundary conditions. For the design considered, we obtain stable mode-locked pulses of few tens of picoseconds at 15-GHz repetition rate in agreement with recently reported experimental results.
TL;DR: In this paper, the reverse dark current mechanism in 4H-SiC avalanche photodiodes (APDs) has been investigated in a pn junction vertical mesa structure, passivated with SiO/sub 2/ grown by plasma enhanced chemical vapor deposition, exhibits predominate leakage current along the mesa sidewall.
Abstract: Temperature-dependent current-voltage (I-V) measurements have been used to determine the reverse dark current mechanisms in 4H-SiC avalanche photodiodes (APDs). A pn junction vertical mesa structure, passivated with SiO/sub 2/ grown by plasma enhanced chemical vapor deposition, exhibits predominate leakage current along the mesa sidewall. Similar APDs, passivated by thermal oxide, exhibit lower dark current before breakdown; however, when the temperature is higher than 146/spl deg/C, an anomalous dark current, which increases rapidly with temperature, is observed. This current component appears to be eliminated by the removal of the thermal oxide. Near breakdown, tunneling is the dominant dark current mechanism for these pn devices. APDs fabricated from a pp/sup -/n structure show reduced tunneling current. At room temperature, the dark current at 95% of breakdown voltage is 140 fA (1.8 nA/cm/sup 2/) for a 100-/spl mu/m diameter APD. At a gain of 1000, the dark current is 35 pA (0.44 /spl mu/A/cm/sup 2/).
TL;DR: In this article, the authors present a comprehensive numerical model to simulate self-heating effects of oxide-confined vertical-cavity surface-emitting lasers (VCSELs) under continuous-wave operation.
Abstract: We present a comprehensive numerical model to simulate self-heating effects of oxide-confined vertical-cavity surface-emitting lasers (VCSELs) under continuous-wave operation. The model self-consistently accounts for the close interaction between optical, electrical, and thermal processes in VCSELs. In particular, hot carriers and nonequilibrium optical phonons in the quantum wells are modeled by solving a carrier energy balance equation and an optical phonon rate equation. Our numerical simulations reveal that they are responsible for aggravated thermal rollovers in VCSELs' L-I characteristics. Detailed comparisons are made and good agreement is obtained between simulations and experiments for the L-I-V and lasing wavelength characteristics of VCSELs with varying oxide aperture size. Various mechanisms that result in the L-I thermal rollover behavior are also investigated with the aid of simulations.
TL;DR: In this article, the authors present a general theoretical model for the optical differential gain in semiconductor lasers, which describes self-assembly quantum dots (QDs), self assembly quantum wires (QWRs), and single quantum-well lasers.
Abstract: We present a general theoretical model for the optical differential gain in semiconductor lasers. The model describes self assembly quantum dots (QDs), self assembly quantum wires (QWRs) and single quantum-well lasers. We have introduced the inhomogeneous broadening due to size fluctuations in the assembly cases. At each dimensionality, we have considered the carrier populations in the excited states and in the reservoirs, where conduction and valence bands are treated separately. We show that for room temperature operation the differential gain reduction due to increased size inhomogeneity is more pronounced in QDs than in QWRs. We show this reduction to be smaller than the one-order reduction attributed to state filling in conventional dot and wire assemblies operating at room temperature. The integration prefactor coefficient of the differential gain in zero-dimensional cases exceed one- and two-dimensional coefficients only for low temperatures where the homogenous broadening is considerably smaller than the thermal energy. The differential gain of QDs, QWRs, and compressively strained single quantum-well lasers operating at room temperature and close to equilibrium is nearly the same.
TL;DR: Optical in-well pumping has been shown to lead to highly efficient operation of semiconductor disk-lasers using resonant absorption or using external optics as mentioned in this paper, where the output power was 1.9 W with slope efficiency up to 35% based on the incident power.
Abstract: Optical in-well pumping is shown to lead to highly efficient operation of semiconductor disk-lasers using resonant absorption or using external optics. Pump radiation absorption of 70% at 940 nm is demonstrated for a laser emitting around 980 nm. Laser output power was 1.9 W with slope efficiencies up to 35% based on the incident power.
TL;DR: In this paper, a radial diode pumping of a back surface cooled active-mirror geometry was proposed for a high-power ytterbium disk laser with a simplified rate model for lasing in radiation-trapped systems.
Abstract: We report a novel design for a high-power ytterbium disk laser. This laser utilizes radial diode pumping of a back surface cooled active-mirror geometry. Wing absorption of the pump light at 0.99 /spl mu/m allows efficient laser operation at 1.05 /spl mu/m with a low quantum defect. Laser performance and thermal loading were characterized for a wide range of conditions. Optimized operation of the laser yielded 490 W in a quasi-continuous-wave mode. Electrical efficiency of the laser was found to be 9.4%, while heating of the laser disk was only 3.2% of the absorbed optical power. Fluorescence re-absorption is identified as the principal heat generation mechanism in this laser. A simplified extension to the conventional rate model is proposed for lasing in radiation-trapped systems. This model allows power flow calculations in a radiation-trapped laser system using a single parameter determined from fluorescence decay waveforms. The revised model agrees with heat load measurements.
TL;DR: In this paper, a photonic crystal fiber (PCF) with an elliptical hole in its solid core was proposed and proved the feasibility of such a fiber and investigated both experimentally and theoretically the dependence of its group birefringence on the geometric hole parameters.
Abstract: We propose a novel type of photonic crystal fiber (PCF), including an elliptical hole in its solid core. We prove the feasibility of such a fiber and investigate both experimentally and theoretically the dependence of its group birefringence on the geometric hole parameters. We show, for the first time, that form-induced birefringence can be achieved in single mode PCFs with large mode area and suggest it as a possible route for the development of polarization maintaining PCF-based LMA fiber devices.
TL;DR: In this paper, the tuning properties of two-dimensional dielectric and metallic photonic crystals, which contain nematic liquid crystal materials as defect elements or layers, are thoroughly analyzed using appropriate formulations of the finite difference time domain (FDTD) method.
Abstract: The tuning properties of two-dimensional dielectric and metallic photonic crystals, which contain nematic liquid crystal materials as defect elements or layers, are thoroughly analyzed using appropriate formulations of the finite difference time domain (FDTD) method. Our methodology correctly incorporates the anisotropy introduced by the liquid crystal materials together with the dispersive properties of the metallic elements; it is used for calculating both the dispersion diagrams of the defect-free photonic crystal as well as the device response in the presence of the defect elements. Numerical simulations reveal that defect states originating from the liquid crystal impurities can be effectively tuned by the application of a local static electric field. Indeed, tuning ranges up to almost 100 nm can be achieved requiring operating voltages lower than 4 V. It is also concluded that the placement of a defect mode relative to the bandgap edges greatly influences both its linewidth as well as its tuning range.
TL;DR: In this article, the nonlinear dynamics of semiconductor laser is applied for microwave frequency division, where the laser is used to drive a slave laser into the dynamical period-two state and a fundamental microwave frequency and its subharmonic are generated in the power spectrum.
Abstract: Nonlinear dynamics of semiconductor lasers is applied for microwave frequency division. Optical injection is used to drive a slave laser into the dynamical period-two state. A fundamental microwave frequency and its subharmonic are generated in the power spectrum. Both frequencies will be simultaneously locked when an external microwave near either frequency is applied on the bias. In our experiment, precise microwave frequency division is demonstrated by modulating the laser at the fundamental of 18.56 GHz. A locked subharmonic at 9.28 GHz with a low phase variance of 0.007 rad/sup 2/ is obtained from a 10-dBm input. A large locking range of 0.61 GHz is measured under a 4-dBm modulation. Similarly, precise frequency multiplication is demonstrated by modulating at 9.65 GHz. At an input power of -5 dBm, a multiplied signal at 19.30 GHz is obtained with a phase variance of 0.027 rad/sup 2/ and a locking range of 0.22 GHz.