IEEE Transactions on Device and Materials Reliability 

About: IEEE Transactions on Device and Materials Reliability is an academic journal published by Institute of Electrical and Electronics Engineers. The journal publishes majorly in the area(s): CMOS & Electrostatic discharge. It has an ISSN identifier of 1530-4388. Over the lifetime, 1671 publications have been published receiving 37949 citations. The journal is also known as: Institute of Electrical and Electronics Engineers transactions on device and material reliability & Institute of Electrical and Electronics Engineers transactions on device and materials reliability.

Radiation-induced soft errors in advanced semiconductor technologies

Abstract: The once-ephemeral radiation-induced soft error has become a key threat to advanced commercial electronic components and systems. Left unchallenged, soft errors have the potential for inducing the highest failure rate of all other reliability mechanisms combined. This article briefly reviews the types of failure modes for soft errors, the three dominant radiation mechanisms responsible for creating soft errors in terrestrial applications, and how these soft errors are generated by the collection of radiation-induced charge. The soft error sensitivity as a function of technology scaling for various memory and logic components is then presented with a consideration of which applications are most likely to require soft error mitigation.

Reliability of GaN High-Electron-Mobility Transistors: State of the Art and Perspectives

Abstract: Failure modes and mechanisms of AlGaN/GaN high-electron-mobility transistors are reviewed. Data from three de-accelerated tests are presented, which demonstrate a close correlation between failure modes and bias point. Maximum degradation was found in "semi-on" conditions, close to the maximum of hot-electron generation which was detected with the aid of electroluminescence (EL) measurements. This suggests a contribution of hot-electron effects to device degradation, at least at moderate drain bias (VDS 30-50 V), new failure mechanisms are triggered, which induce an increase of gate leakage current. The latter is possibly related with the inverse piezoelectric effect leading to defect generation due to strain relaxation, and/or to localized permanent breakdown of the AlGaN barrier layer. Results are compared with literature data throughout the text.

Review on high-k dielectrics reliability issues

Abstract: High-k gate dielectrics, particularly Hf-based materials, are likely to be implemented in CMOS advanced technologies. One of the important challenges in integrating these materials is to achieve lifetimes equal or better than their SiO/sub 2/ counterparts. In this paper we review the status of reliability studies of high-k gate dielectrics and try to illustrate it with experimental results. High-k materials show novel reliability phenomena related to the asymmetric gate band structure and the presence of fast and reversible charge. Reliability of high-k structures is influenced both by the interfacial layer as well as the high-k layer. One of the main issues is to understand these new mechanisms in order to asses the lifetime accurately and reduce them.

Reliability study of phase-change nonvolatile memories

Abstract: A detailed investigation of the reliability aspects in nonvolatile phase-change memories (PCM) is presented, covering the basic aspects related to high density array NVM, i.e., data retention, endurance, program and read disturbs. The data retention capabilities and the endurance characteristics of single PCM cells are analyzed, showing that data can be stored for 10 years at 110/spl deg/C and that a resistance difference of two order of magnitude between the cell states can be maintained for more than 10/sup 11/ programming cycles. The main mechanisms responsible for instabilities just before failure as well as for final device breakdown are also discussed. Finally, the impact of read and program disturbs are clearly assessed, showing with experimental data and simulated results that the crystallization induced during the cell read out and the thermal cross-talk due to adjacent bits programming do not affect the retention capabilities of the PCM cells.

Soft errors in advanced semiconductor devices-part I: the three radiation sources

Abstract: In this review paper, we summarize the key distinguishing characteristics and sources of the three primary radiation mechanisms responsible for inducing soft errors in semiconductor devices and discuss methods useful for reducing the impact of the effects in final packaged parts.