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Showing papers in "International Journal of Rf and Microwave Computer-aided Engineering in 2021"












Journal ArticleDOI
TL;DR: This paper explores and develops efficient temperature‐dependent small‐signal modeling approaches for GaN high electron mobility transistors (HEMTs) and shows that the cascaded MLP with GA exhibits better performance but with increased complexity.

















Journal ArticleDOI
TL;DR: In this article, a wide-band absorber and reflector using pin diodes based on active frequency selective surface (AFSS) is presented, in which the AFSS is performed as a wideband reflector with OFF and ON state Diodes.
Abstract: A wide-band absorber and reflector using pin diodes based on active frequency selective surface (AFSS) is presented, which the AFSS is performed as a wide-band absorber and reflector with OFF and ON state diodes. The simulation results of the proposed structure are shown that the reflectivity is below -10dB when the PIN diode is turned off and the reflection coefficient is above -3dB when the PIN diode is turned on for the wide-band range of frequency from 7.5 to 18.5 GHz under normal incidence.