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Showing papers in "Journal of Applied Physics in 1983"


Journal ArticleDOI
TL;DR: In this article, the integropartial differential equations of the linear theory of nonlocal elasticity are reduced to singular partial differential equations for a special class of physically admissible kernels.
Abstract: Integropartial differential equations of the linear theory of nonlocal elasticity are reduced to singular partial differential equations for a special class of physically admissible kernels. Solutions are obtained for the screw dislocation and surface waves. Experimental observations and atomic lattice dynamics appear to support the theoretical results very nicely.

3,929 citations


Journal ArticleDOI
TL;DR: In this article, the secondary electron emission of surfaces bombarded by primary electrons with respect to scanning electron microscopy is surveyed and different detectors for secondary electrons in the scanning electron microscope, material, topography, voltage, magnetic, and crystallographic orientation contrast, as well as the lateral resolution, depending among other things on the spatial distribution of the emitted secondary electrons, are discussed.
Abstract: This paper surveys experimental results concerned with secondary electron emission of surfaces bombarded by primary electrons with respect to scanning electron microscopy. The energy distribution, the angular distribution, and the yield of secondary electrons from metals and insulators are reviewed as well as the escape depth of the secondary electrons and the contribution of the backscattered electrons to the secondary electron yield. The different detectors for secondary electrons in the scanning electron microscope are described. The contrast mechanisms in the scanning electron microscope, material, topography, voltage, magnetic, and crystallographic orientation contrast based on secondary electron emission, as well as the lateral resolution, depending among other things on the spatial distribution of the emitted secondary electrons, are discussed.

858 citations


Journal ArticleDOI
TL;DR: In this article, the authors describe the deposition of amorphous hydrogenated hard carbon (a-C:H) thin films from benzene vapor in a rf plasma.
Abstract: The deposition of amorphous hydrogenated hard carbon (a–C:H) thin films from benzene vapor in a rf plasma is described. a–C:H was deposited on glass, quartz, Si, Ge, and GaAs. Negative self‐bias VB and gas pressure P are shown to be the two significant parameters for an accurate control of the deposition process. The dependence of growth rate and deposition temperature on VB and P was determined; this gives an empirical relation for the average energy E of the ions forming the thin films. Refractive index (1.85–2.20 in the IR), optical gap (0.8–1.8 eV) and density (1.5–1.8 g/cm3) of a–C:H was measured. The optical gap varies linearly with the content of bonded hydrogen in the films. The density of a–C:H is proportional to the average ion energy E. We demonstrate the application of a–C:H as antireflective coating on Ge for 10.6 μm (reflection <0.2% at 10.6 μm) and as terminating layer of an optical multilayer stack.

471 citations


Journal ArticleDOI
TL;DR: In this article, a characteristic interface trap was observed in a hole trapping experiment when electrons were captured by trapped holes injected by an avalanche in the silicon, which could be explained by the generation of new electronic states through relaxation of strained bonds which were proposed to be the origin of hole traps.
Abstract: A characteristic interface trap was observed in a hole trapping experiment when electrons were captured by trapped holes injected by an avalanche in the silicon. The observations could be explained by the generation of new electronic states through relaxation of strained bonds which were proposed to be the origin of hole traps. The result is either a weak bond in the network or two dangling bonds with no net charge. The weak bond or dangling bonds give rise to neutral traps in the bulk and interface traps at the interface of the oxide. The presence of interface traps for such defects at the interface is predicted by theoretical calculations.

454 citations


Journal ArticleDOI
TL;DR: In this paper, the authors present mathematical formulations for new, three-dimensional, packet-like solutions to the free-space homogeneous Maxwell's equations, which propagate in a straight line at light velocity.
Abstract: This paper presents mathematical formulations for new, three‐dimensional, packet‐like solutions to the free‐space homogeneous Maxwell’s equations. These solutions are real, nonsingular, continuous functions which propagate in a straight line at light velocity. They remain focused for all time. The asymptotic behavior of the fields away from the moving pulse center has a magnitude which decreases as the inverse of the distance from the pulse centers.

453 citations


Journal ArticleDOI
TL;DR: In this paper, the maximum current density in the vicinity of the cathode was determined by measuring the size of the molten cathode tip (thoriated tungsten) for a given arc current.
Abstract: Although the high‐intensity, free‐burning argon arc has been the object of many studies, modeling of the entire arc has been precluded because of complexities due to the interaction of electric, magnetic, fluid dynamic, and thermal effects, and the associated lack of realistic boundary conditions, in particular, close to the cathode. For establishing the most crucial boundary condition, which is the current density in the vicinity of the cathode, the maximum current density has been determined experimentally by measuring the size of the molten cathode tip (thoriated tungsten) for a given arc current. Calculated temperature profiles for a 100‐ and 200‐ A atmospheric pressure argon arc (electrode gap of 1 cm) are in good agreement with spectrometric measurements based on absolute line and continuum intensities. The arc current and arc current distribution are not only responsible for the temperature distribution in the arc, but also for the magnetohydrodynamics (MHD) pumping action in the cathode region, i.e., the arc behavior is mainly controlled by the current. In contrast to the sensitivity of the current density boundary condition on the results, the calculations show that variations of the boundary condition for the flow field are insignificant.

404 citations


Journal ArticleDOI
TL;DR: In this article, the phosphorusoxygen-hole center (POHC) was shown to occur in two variants comprising holes trapped on one or two nonbridging oxygens, and a singlet resonance S due to E′ type defects was observed to grow in with annealing above ∼800 K, regardless of whether or not the sample was irradiated.
Abstract: Defect centers induced by ionizing radiation (50–100‐keV x rays, 60Co γ rays) in high purity P‐doped silica glass have been observed and elucidated by ESR spectroscopy. Four generic species are well characterized on the basis of the observed 31P hyperfine splittings and g values as defects analogous to PO2−3 (phosphoryl), PO4−4 (phosphoranyl), PO2−2 (phosphinyl), and PO2−4 radicals. The latter species, also termed the phosphorus‐oxygen‐hole center (POHC), is shown to occur in two variants comprising holes trapped on one or two nonbridging oxygens. Radiation‐induced Si E′ centers with and without P next‐nearest‐neighbors were also identified, and a singlet resonance S due to E′ type defects such as (OSi2)Si⋅ and/or (O2Si)Si⋅ was observed to grow in with annealing above ∼800 K, regardless of whether or not the sample was irradiated. The structures, formation mechanisms, and precursors of these defects have been determined or inferred for all centers. Radiation‐induced optical absorption spectra over the ran...

346 citations


Journal ArticleDOI
TL;DR: A detailed study of the polarization and depolarization behavior of lead lathanum zirconate titanate transparent ceramics under dc bias and constant heating rates has been carried out as mentioned in this paper.
Abstract: A detailed study of the polarization and depolarization behavior of 7:65:35 and 8:65:35 lead lathanum zirconate titanate transparent ceramics under dc bias and constant heating rates has been carried out. The dielectricpermittivity exhibits a new anomaly near 0 °C in freshly thermally depoled samples which is associated with a buildup of macrodomains and the development of a remanent polarization. From continuity of the dispersive behaviors it is suggested that the dielectric change at the so‐called α–β transition T d is not a conventional phase change, but rather is a loss of macro‐ordering and a decay back to a disordered microdomain texture.

327 citations


Journal ArticleDOI
TL;DR: In this paper, the energy band gap in epitaxial layers is changed by biaxial elastic strains which are produced by lattice mismatches in heterostructures.
Abstract: It is demonstrated that the energy band gap in epitaxial layers is changed by biaxial elastic strains which are produced by lattice mismatches in heterostructures. The epitaxial layers used in this work were Gax In1−xP layers grown on (001) GaAs substrates by liquid phase epitaxy. The energy band‐gap shifts were determined by comparing the photoluminescence peak energies of the as‐grown GaxIn1−xP layers with those from free‐standing layers removed from the GaAs substrates. It was experimentally found that the energy band gap shifts linearly with the elastic strain in the layer. Assuming that the lattice mismatch was accommodated only by the elastic distortion, the energy band‐gap shifts in Ga0.5In0.5P alloys were also calculated. The calculated results are 6.0 eV or 4.9×10−12 eV/dyn cm−2 per unit strain or stress, respectively, for the [100] and [010] biaxial elastic stress. These values are in quite good agreement with the experimental results.

321 citations


Journal ArticleDOI
TL;DR: In this article, the binding energy of an n−type and Zn doped p−type Gax In1−xAs /InP (0.44
Abstract: Optical, crystallographic, and transport properties of nominally undoped n‐type and Zn doped p‐type Gax In1−xAs /InP (0.44

314 citations


Journal ArticleDOI
TL;DR: In this paper, the magnetron sputtering technique was used to produce highly transparent (transmission ∼90%) and conducting (resistivity ∼10−5 Ω'cm) indium tin oxide (ITO) films.
Abstract: Indium tin oxide (ITO) films have been prepared by the magnetron sputtering technique from a target of a mixture of In2O3 and SnO2 in the proportion 9:1 by weight. By optimizing the deposition conditions it has been possible to produce highly transparent (transmission ∼90%) and conducting (resistivity ∼10−5 Ω cm) ITO films. A resistivity ∼10−4 Ω cm has been obtained for films of thickness ∼1000 A at a comparatively low substrate temperature of 50 °C and without using oxygen in the sputtering chamber. To characterize the films, the following properties have been studied, viz., electrical conductivity, thermoelectric power, Hall effect, optical transmission, and band gap. The effect of annealing in air and vacuum on the properties of the films have also been studied.

Journal ArticleDOI
TL;DR: In this article, the I•V and C•V measurements were used to explore the polyacetylene/polysiloxane interface electrical properties and the electrical conduction mechanism in this interface was found to be a Schottky-Richardson mechanism.
Abstract: Polyacetylene/polysiloxane interface states have been investigated using metal‐insulator‐semiconductor (MIS) diodes. The 1‐mm2 MIS diodes (Al/polysiloxane/polyacetylene) have been fabricated by use of a conventional photolithographic technique. The I‐V and C‐V measurements were used to explore the polyacetylene/polysiloxane interface electrical properties. The electrical conduction mechanism in this interface was found to be a Schottky‐Richardson mechanism. Using the C‐V measurements to determine the interface states density distribution, it was found that the distribution had a U shape in the gap and its minimum value was 6×1013 eV−1 cm−2. An attempt was made to fabricate an insulating gate field‐effect transistor which worked as a depletion‐type transistor with a very low transconductance, gm =13 nΩ−1.

Journal ArticleDOI
TL;DR: In this paper, the surface free energy and surface tension of solid metals reported in the literature are compared and preferred values for preferred values are suggested, the basic criteria which determine the value of obtained results are shown.
Abstract: Measurements of surface free energy and surface tension of solid metals reported in the literature are collected and compared and preferred values are suggested. The basic criteria which determine the value of obtained results are shown.

Journal ArticleDOI
TL;DR: Theoretical calculations of reaction constants show that the intrinsic donor is the oxygen vacancy, rather than the zinc interstitial as mentioned in this paper, and the depletion of vacancies in the surface region, as the ZnO is cooled from the sintering temperature, is also calculated.
Abstract: Theoretical calculations are presented for equilibrium concentrations of zinc and oxygen vacancies in ZnO. Results are presented at the sintering temperature, and also at room temperature. Theoretical calculations of reaction constants show that the intrinsic donor is the oxygen vacancy, rather than the zinc interstitial. The depletion of vacancies in the surface region, as the ZnO is cooled from the sintering temperature, is also calculated. Homojunction effects which are caused by such depletion are shown to be small.

Journal ArticleDOI
Tung-Sheng Kuan1, Philip E. Batson1, Thomas N. Jackson, Hans S. Rupprecht1, E. L. Wilkie1 
TL;DR: In this paper, the interface structures resulting from the alloying reactions between a Au/Ni/Au-Ge composite film and a (100) GaAs substrate were studied by transmission electron microscopy and scanning transmission electron microscope.
Abstract: The interface structures resulting from the alloying reactions between a Au/Ni/Au‐Ge composite film and a (100) GaAs substrate were studied by transmission electron microscopy and scanning transmission electron microscopy. Electron microscope examinations of the cross‐sectional samples prepared in this study offered excellent lateral and depth resolution of local structures which are not available by other analytical techniques used previously in similar studies. The distributions and chemical compositions of various phases formed, and the morphologies of the interfaces between these phases were monitored and compared with the measured contact resistances at three different stages of alloying. A correlation between the interface structure and the contact resistance was found.

Journal ArticleDOI
TL;DR: In this paper, the results of a crystallization study in glassy NiZr were presented, showing that the glasses are most stable at and around the eutectic compositions.
Abstract: We present the results of a crystallization study in glassy Ni‐Zr. The alloys were prepared by melt spinning over the continuous range Ni20Zr80 to Ni70Zr30 including for the first time the region between Ni40Zr60 and Ni60Zr40. As expected we find that the glasses are most stable at and around the eutectic compositions, except that at the extreme Zr‐rich eutectic the glasses are destabilized by the premature precipitation of ω‐Zr. The products of crystallization indicate that the current crystalline phase diagram is incomplete: a new peritectoid phase must be added at the composition Ni2Zr.

Journal ArticleDOI
TL;DR: In this paper, the Kane nonparabolic approximation for band structure and recent measurements of the heavy hole mass mh and energy gap Eg were used to calculate the intrinsic carrier concentration in Hg1−xCdxTe.
Abstract: Intrinsic carrier concentration in Hg1−xCdxTe is calculated as a function of temperature and composition using the Kane nonparabolic approximation for band structure and recent measurements of the heavy hole mass mh and energy gap Eg. An expression fitted to these calculations is: ni[5.585−3.820x+1.753(10−3)T −1.364(10−3)xT] ×(1014)E3/4gT3/2 exp(−Eg/2kbT). The fit of this approximation is within 1% of the calculated ni for the range Eg>0, 50

Journal ArticleDOI
TL;DR: In this paper, a theoretical analysis of the induced current profiles at grain boundaries in polycrystalline solar cells, as obtained by light or electron beam excitation, is given.
Abstract: A theoretical analysis is given of the induced current profiles at grain boundaries in polycrystalline solar cells, as obtained by light or electron beam excitation. The area A and the variance σ2 of the contrast profile of a grain boundary are calculated for realistic generations as functions of the interface recombination velocity vs and the minority carrier diffusion length L. A graphical new procedure is proposed which allows the simultaneous determination of vs and L from the measured values of A and σ. The evaluation of an experimental electron beam induced current profile illustrates the applicability of the theory.

Journal ArticleDOI
TL;DR: Ferroelectric films of lead zirconate titanate (PZT) have been fabricated by rf planar magnetron sputtering as mentioned in this paper, and the sputtering rate is in the range 0.2-1.0 μm/h and varies with sputtering pressure and substrate temperature.
Abstract: Ferroelectric films of lead zirconate titanate (PZT) have been fabricated by rf planar magnetron sputtering. Films having a resistivity >106 Ω cm and a dielectric constant >800 at 300 K have been achieved using 100% oxygen as a sputtering medium, 10% excess PbO added to the target, and appropriate post‐deposition annealing. The sputtering rate is in the range 0.2–1.0 μm/h and varies with sputtering pressure and substrate temperature. Post‐deposition annealing affects both crystallinity and grain size, but incipient crystallization formed only in as‐grown films deposited at substrate temperatures >400 °C is essential for this process to be effective. A clear ferroelectric transition is observed at 350 °C, while the activation energy for dc conductivity of around 0.8 eV is consistent with bulk properties of PZT. The spontaneous polarization and coercive field measured from ferroelectric hysteresis loops is 20.75 μC/cm2 and 10 kV/cm, respectively. The optical transmittance of the films is determined by a Pb–Pb charge transfer band near 400 nm and this is a sensitive test of film stoichiometry.

Journal ArticleDOI
TL;DR: In this article, a high-temperature optical fiber thermometer made from single crystal sapphire has been developed for use from 600 to approximately 2000 degrees C. The device consists of a small blackbody cavity which is sputtered on the end of a thin (0.25-1.25mm diameter, 0.05-0.30m length) spphire fiber, a connecting lowtemperature glass fiber, and a conventional optical detector.
Abstract: A high‐temperature optical fiber thermometer made from single crystal sapphire has been developed for use from 600 to approximately 2000 °C. The device consists of a small blackbody cavity which is sputtered on the end of a thin (0.25–1.25‐mm diameter, 0.05–0.30‐m length) sapphire fiber, a connecting low‐temperature glass fiber, and a conventional optical detector. The radiance from the cavity is used to measure its temperature. The present instrument is calibrated at a single temperature and uses the fundamental radiation laws to extrapolate to other temperatures. It is accurate and has a high sensitivity and rapid temporal response. There appear to be a number of applications of the device both in science and industry.

Journal ArticleDOI
TL;DR: In this article, a model of a thin-film solar cell is presented that can be easily used to analyze solar cell properties and the continuity equations are solved using the regional approximation, producing elementary solutions that give insight into the physics of the transport in the cell.
Abstract: A model of a p‐i‐n thin‐film solar cell is presented that can be easily used to analyze solar cell properties. The continuity equations are solved using the regional approximation, producing elementary solutions that give insight into the physics of the transport in the cell. The steady‐state solutions are compared with measurements on typical hydrogenated amorphous silicon, a‐Si:H, solar cells. The ac solutions are used to explain a new source of photocapacitance due to mobile carriers.

Journal ArticleDOI
TL;DR: In this article, a theoretical study of resonant tunneling in multilayered Ga1−xAlxAs/GaAs structures is presented, where the spectrum of the resonant energies and its dependence on the barrier structure are analyzed from calculated profiles of barrier transparency versus energy, and from currentvoltage characteristics computed at selected temperatures and Fermi levels.
Abstract: A theoretical study of resonant tunneling in multilayered Ga1−xAlxAs/GaAs structures is presented. The spectrum of resonant energies and its dependence on the barrier structure are analyzed from calculated profiles of barrier transparency versus energy, and from current–voltage characteristics computed at selected temperatures and Fermi levels. The present formalism is based on the effective mass approximation as done to date, but contains three significant improvements: a more realistic treatment of the spatial dependence of effective masses and band edges; the recognition of the special dynamical role played by the transverse energy as a consequence of the difference in itinerant two dimensional carrier motion from layer to layer; and the avoidance of plane‐wave or WKB approximations for calculating the wave function in favor of direct numerical evaluation. It is shown that these revisions lead to quantitative differences with results of previous work.

Journal ArticleDOI
TL;DR: In this article, an oscillator which utilizes the effect of the vortex motion in long Josephson tunnel junctions, i.e., flux flow, has been presented in millimeter and submillimeter wave region.
Abstract: An oscillator which utilizes the effect of the vortex motion in long Josephson tunnel junctions, i.e., flux flow, has been presented in millimeter and submillimeter wave region. An electromagnetic wave generated by the oscillator is detected with a small tunnel junction as a detector with a refined coupling configuration. Quantitative evaluation of the detected power showed that the detected power attained the value of 10−6 W in the frequency range between 100 and 400 GHz, which is far superior to previous results. Frequency and magnetic field dependences of the present system were also measured, which showed that the output power was able to be controlled by the dc magnetic field. The present oscillator will be promising as the local oscillator in the integrated Josephson receiver systems.

Journal ArticleDOI
TL;DR: In this article, the lattice thermal resistivities of III-V compound alloys have been analyzed with a theoretical prediction based on a simplified model of the alloy disorder scattering.
Abstract: Lattice thermal resistivities of III–V compound alloys have been analyzed with a theoretical prediction based on a simplified model of the alloy‐disorder scattering. The theoretical prediction shows a quite good agreement with the experimental data on various III–V ternary compounds. This model has also been applied to obtain the thermal resistivity of In1−x Gax Asy P1−y lattice‐matched to InP for the composition range of 0≤y≤1.0. The result indicates that the thermal resistivity increases markedly with alloying and exhibits a maximum value of about 24 W−1 deg cm at an alloying composition of y≂0.75.

Journal ArticleDOI
TL;DR: In this paper, Monte Carlo simulations of electron impact ionization in silicon are presented which include the pseudopotential band structure as well as collision broadening and higher order effects in the electron phonon interaction.
Abstract: Monte Carlo simulations of electron impact ionization in silicon are presented which include the pseudopotential band structure as well as collision broadening and higher order effects in the electron phonon interaction. Conduction in the two lowest conduction bands of silicon is considered. We also present new results for the impact ionization probability and deformation potential constants which are obtained by comparing our theory with a variety of experimental results.

Journal ArticleDOI
TL;DR: The intrinsic crack tip processes of either propagation by cleavage or blunting by the nucleation of dislocations from the nonlinearly stressed region at the crack tip have been simulated by a molecular dynamics approach in alpha-iron and in copper, utilizing the Johnson and Morse potentials, respectively, and a new fixed stress boundary condition at the border between the inner discrete region and the outer anisotropic linear continuum as discussed by the authors.
Abstract: The intrinsic crack tip processes of either propagation by cleavage or blunting by the nucleation of dislocations from the nonlinearly stressed region at the crack tip have been simulated by a molecular dynamics approach in alpha‐iron and in copper, utilizing the Johnson and Morse potentials, respectively, and a new fixed stress boundary condition at the border between the inner discrete region and the outer anisotropic linear continuum. The simulations showed that alpha‐iron is inherently brittle, and fails by cleavage along a cube plane when the stress intensity factor reaches the critical Griffith value. No dislocations are nucleated in iron and even the development of restricted crack tip twinning in special orientations does not alter this intrinsic brittleness. In copper crack tip blunting at a level somewhat less than the Griffith stress intensity factor always prevented brittle crack growth by cleavage. Thus, copper is inherently ductile. Because it permitted the unhindered development of substantial nonlinear crack tip displacements, and did not prevent dislocations from penetrating through the border between the inner nonlinear material and the outer linear continuum, the new stress boundary condition was found to be far superior to the fixed or flexible boundary conditions used at this border by previous investigators. This is reflected in the observed critical stress intensity factors for brittle cleavage that were found to be nearly equal to the expected Griffith value for the stress boundary condition while the displacement boundary conditions gave results nearly three times higher.

Journal ArticleDOI
TL;DR: In this paper, the authors presented calculated DLTS spectra in a simple model for broadened defect levels and compared the calculated spectra with experimental data for a deep electron trap in GaAs1−xPx.
Abstract: Evaluation of data obtained from deep level transient spectroscopy (DLTS) is often based on the assumption that the transients are exponential. The applicability of DLTS to the study of deep energy levels in semiconductor alloys has therefore been questioned since thermal transients are often nonexponential in these materials. In this paper we present calculated DLTS spectra in a simple model for broadened defect levels. The calculated spectra are compared with experimental data for a deep electron trap in GaAs1−xPx . The main result is that, within the model, DLTS‐deduced activation energies and thermal emission rates are, indeed, relevant even when the transients are strongly nonexponential as a result of alloy broadening. A method of estimating the corrected concentration of deep levels and the distribution in binding energies is also presented.

Journal ArticleDOI
TL;DR: In this paper, the authors proposed a model that, using the thermoelastic equations, analytically explains the effect of this bending, which is consistent with previous piezoelectric photoacoustic calculations.
Abstract: In some photoacoustic experiments, thermoelastic bendings of solid samples produce strong signals which cannot be analyzed by usual photoacoustic calculations. We propose a model that, using the thermoelastic equations, analytically explains the effect of this bending. It is found that the model agrees well with data obtained from an experiment sensitive to thermoelastic deformations only. Furthermore, the model is also consistent with previous piezoelectric‐photoacoustic calculations. This experiment also leads to measurements of thermal diffusivities.

Journal ArticleDOI
TL;DR: In this paper, the authors measured the biaxial elastic modulus of thin foils containing short-wavelength composition modulations produced by vapor deposition, and observed a twofold increase in the modulus as compared with homogeneous foils.
Abstract: The biaxial elastic modulus Y[111] was measured by bulge testing on Cu‐Ni thin foils containing short‐wavelength composition modulations produced by vapor deposition. In the wavelength range of 1.3–3.0 nm, we observed a twofold increase in the modulus as compared with homogeneous foils. The increase was proportional to the square of the composition amplitude. The maximum modulus occurred at a wavelength of 1.7 nm and an average composition of 45 at. % Cu. The stress‐strain curves of the modulated foils were reversible but non‐Hookean, while homogeneous foils displayed a Hookean behavior with moduli in good agreement with those calculated from the single‐crystal elastic constants of bulk Cu‐Ni alloys.

Journal ArticleDOI
TL;DR: In this paper, the authors used secondary ion mass spectrometry (SIMS) and carrier profiles, measured by differential capacitancevoltage (C‐V) profiling, of boron and fluorine implanted as B, F, BF, or BF2 ions into random and channeling orientations of crystalline silicon, and into silicon amorphized by silicon ion implantation.
Abstract: Depth distributions, measured by secondary ion mass spectrometry (SIMS), and carrier profiles, measured by differential capacitance‐voltage (C‐V) profiling, of boron and fluorine implanted as B, F, BF, or BF2 ions into random and channeling orientations of crystalline silicon, and into silicon amorphized by silicon ion implantation are reported. Low boron energies of 8 and 10 keV and the corresponding energies of 36 and 45 keV for BF2 ions are emphasized because of their use for high resolution device and circuit applications in silicon and silicon‐on‐sapphire. Amorphizing crystalline silicon prior to boron implantation eliminates the significant channeling tails on 8‐ or 10‐keV boron profiles. Fluorine penetrates more deeply into crystalline silicon than boron does. Both boron and fluorine redistribute during annealing at 925 °C/20 min for B, F, BF, or BF2 implants, but with quite different characteristics as illustrated, and depend on the implantation fluence (5×1014 and 2×1015 cm−2 reported here). The fluorine redistribution profiles are strongly influenced by the magnitude and distribution of damage that remains after annealing. Fair agreement is shown between boron atom depth distributions measured by SIMS and C‐V electrical profiles measured for a fluence of 1.5×1012 cm−2. Differential C‐V profiles indicate that the entire ion spectrum from BF3 can be implanted and electrically activated (for a fluence of 1.5×1012 cm−2), as can a BF2 implant. Implantation through a 20‐nm layer of SiO2 has no significant effect on the boron depth distribution in crystalline silicon. Pearson IV moments are given for the low energy boron profiles. The use of these profiles for modeling calculations is discussed. The suprem model of an exponential for the channeling tail of boron implants in crystalline silicon is fairly good for fluences greater than about 1015 cm−2, but poorer for lower fluences, but the slope and matching to the random portion of the profiles are difficult to predict. In order for modeling calculations to reasonably represent boron profiles, either the silicon substrate should be amorphized prior to boron implantation, or the modeling should be modified to use experimental data measured for the implant and silicon conditions.