Showing papers in "Journal of Applied Physics in 2007"

Surface plasmon enhanced silicon solar cells

Abstract: S. Pillai would like to acknowledge the UNSW Faculty of Engineering Research Scholarship. K.R. Catchpole acknowledges the support of an Australian Research Council fellowship.

Realization and electrical characterization of ultrathin crystals of layered transition-metal dichalcogenides

Abstract: Ultrathin crystals of the layered transition-metal dichalcogenide MoS2 (semiconducting) and TaS2 (metallic) were obtained by mechanical peeling or chemical exfoliation techniques and electrically contacted using electron-beam lithography. The MoS2 devices showed high field-effect mobility in the tens of cm2∕Vs and an on/off ratio higher than 105. The TaS2 devices remained metallic despite the fabrication process and showed an enhancement of the superconducting transition temperature and disappearance of the charge density wave phase anomaly at low temperature.

Analytical model for subthreshold conduction and threshold switching in chalcogenide-based memory devices

Abstract: Chalcogenide materials are receiving increasing interest for their many applications as active materials in emerging memories, such as phase-change memories, programmable metallization cells, and cross-point devices. The great advantage of these materials is the capability to appear in two different phases, the amorphous and the crystalline phases, with rather different electrical properties. The aim of this work is to provide a physically based model for conduction in the amorphous chalcogenide material, able to predict the current-voltage (I−V) characteristics as a function of phase state, temperature, and cell geometry. First, the trap-limited transport at relatively low currents (subthreshold regime) is studied, leading to a comprehensive model for subthreshold conduction accounting for (a) the shape of the I−V characteristics, (b) the measured temperature dependence, (c) the dependence of subthreshold slope on the thickness of the amorphous phase, and (d) the voltage dependence of the activation ener...

The effect of front ZnO:Al surface texture and optical transparency on efficient light trapping in silicon thin-film solar cells

Abstract: This study addresses the material properties of magnetron-sputtered aluminum-doped zinc oxide (ZnO:Al) films and their application as front contacts in silicon thin-film solar cells. Optimized films exhibit high conductivity and transparency, as well as a surface topography with adapted light-scattering properties to induce efficient light trapping in silicon thin-film solar cells. We investigated the influence on the ZnO:Al properties of the amount of alumina in the target as well as the substrate temperature during sputter deposition. The alumina content in the target influences the carrier concentration leading to different conductivity and free carrier absorption in the near infrared. Additionally, a distinct influence on the film growth of the ZnO:Al layer was found. The latter affects the surface topography which develops during wet-chemical etching in diluted hydrochloric acid. Depending on alumina content in the target and heater temperature, three different regimes of etching behavior have been i...

Perpendicular recording media for hard disk drives

Abstract: Perpendicular recording technology has recently been introduced in hard disk drives for computer and consumer electronics applications. Although conceptualized in the late 1970s, making a product with perpendicular recording that has competing performance, reliability, and price advantage over the prevalent longitudinal recording technology has taken about three decades. One reason for the late entry of perpendicular recording is that the longitudinal recording technology was quite successful in overcoming many of its problems and in staying competitive. Other reasons are the risks, problems, and investment needed in making a successful transition to perpendicular recording technology. Iwasaki and co-workers came up with many inventions in the late 1970s, such as single-pole head, CoCr alloy media with a perpendicular anisotropy, and recording media with soft magnetic underlayers [S. Iwasaki and K. Takemura, IEEE Trans. Magn. 11, 1173 (1975); S. Iwasaki and Y. Nakamura, IEEE Trans. Magn. 14, 436 (1978); S...

Physics of strain effects in semiconductors and metal-oxide-semiconductor field-effect transistors

Abstract: A detailed theoretical picture is given for the physics of strain effects in bulk semiconductors and surface Si, Ge, and III–V channel metal-oxide-semiconductor field-effect transistors. For the technologically important in-plane biaxial and longitudinal uniaxial stress, changes in energy band splitting and warping, effective mass, and scattering are investigated by symmetry, tight-binding, and k⋅p methods. The results show both types of stress split the Si conduction band while only longitudinal uniaxial stress along ⟨110⟩ splits the Ge conduction band. The longitudinal uniaxial stress warps the conduction band in all semiconductors. The physics of the strain altered valence bands for Si, Ge, and III–V semiconductors are shown to be similar although the strain enhancement of hole mobility is largest for longitudinal uniaxial compression in ⟨110⟩ channel devices and channel materials with substantial differences between heavy and light hole masses such as Ge and GaAs. Furthermore, for all these materials,...

Effects of molecular interface modification in hybrid organic-inorganic photovoltaic cells

Abstract: We have systematically investigated the effects of surface modification of titania (TiO2) in hybrid TiO2∕regioregular poly(3-hexylthiophene) (P3HT) photovoltaic cells. By employing a series of para-substituted benzoic acids with varying dipoles and a series of multiply substituted benzene carboxylic acids, the energy offset at the TiO2∕polymer interface and thus the open-circuit voltage of devices can be tuned systematically by 0.25 V. Transient photovoltage measurements showed that the recombination kinetics was dominated by charge carrier concentration in these devices and were closely associated with the dark current. The saturated photocurrent of TiO2∕P3HT devices exhibited more than a twofold enhancement when molecular modifiers with large electron affinity were employed. The ability of modifiers to accept charge from polymers, as revealed in photoluminescence quenching measurement with blends of polymers, was shown to be correlated with the enhancement in device photocurrent. A planar geometry photo...

Making waves: Kinetic processes controlling surface evolution during low energy ion sputtering

Abstract: When collimated beams of low energy ions are used to bombard materials, the surface often develops a periodic pattern or “ripple” structure. Different types of patterns are observed to develop under different conditions, with characteristic features that depend on the substrate material, the ion beam parameters, and the processing conditions. Because the patterns develop spontaneously, without applying any external mask or template, their formation is the expression of a dynamic balance among fundamental surface kinetic processes, e.g., erosion of material from the surface, ion-induced defect creation, and defect-mediated evolution of the surface morphology. In recent years, a comprehensive picture of the different kinetic mechanisms that control the different types of patterns that form has begun to emerge. In this article, we provide a review of different mechanisms that have been proposed and how they fit together in terms of the kinetic regimes in which they dominate. These are grouped into regions of behavior dominated by the directionality of the ion beam, the crystallinity of the surface, the barriers to surface roughening, and nonlinear effects. In sections devoted to each type of behavior, we relate experimental observations of patterning in these regimes to predictions of continuum models and to computer simulations. A comparison between theory and experiment is used to highlight strengths and weaknesses in our understanding. We also discuss the patterning behavior that falls outside the scope of the current understanding and opportunities for advancement.

Targeted gold nanorod contrast agent for prostate cancer detection by photoacoustic imaging

Abstract: A targeted gold nanoparticle has been developed as a contrast agent for photoacoustic medical imaging. We have studied cancer cell targeting by antibody conjugated gold nanorods for high contrast photoacoustic imaging. By changing the aspect ratio of the elongated “rod” shape of the gold nanoparticle, its plasmon peak absorption wavelength can be tuned to the near IR (700–900nm) for an increased penetration depth into biological tissue. Effective cell targeting and sensitive photoacoustic detection of a single layer of cells are demonstrated. Combining ultrasound with contrast agent based photoacoustic imaging is proposed as a visual tool to compound molecular and structural information for early stage prostate cancer detection.

Purity assessment of multiwalled carbon nanotubes by Raman spectroscopy

Abstract: Carbonaceous purity assessment for chemical vapor deposition multiwalled carbon nanotubes (MWNTs) using Raman spectroscopy was investigated Raman spectroscopy was performed on a reference sample set containing predetermined ratios of MWNTs and representative synthesis by-products Changes in the characteristic Raman peak ratios (ie, ID∕IG, IG′∕IG, and IG′∕ID) as a function of MWNT content were measured Calibration curves were generated from the reference samples and used to evaluate MWNTs synthesized under different conditions with varying purity The efficacy of using Raman spectroscopy in conjunction with thermogravimetric analysis for quantitative MWNT purity assessment is discussed

Carrier concentration dependence of band gap shift in n-type ZnO:Al films

Abstract: Al-doped ZnO (AZO) thin films have been prepared by mist chemical vapor deposition and magnetron sputtering. The band gap shift as a function of carrier concentration in n-type zinc oxide (ZnO) was systematically studied considering the available theoretical models. The shift in energy gap, evaluated from optical absorption spectra, did not depend on sample preparations; it was mainly related to the carrier concentrations and so intrinsic to AZO. The optical gap increased with the electron concentration approximately as ne2∕3 for ne≤4.2×1019 cm−3, which could be fully interpreted by a modified Burstein–Moss (BM) shift with the nonparabolicity of the conduction band. A sudden decrease in energy gap occurred at 5.4−8.4×1019 cm−3, consistent with the Mott criterion for a semiconductor-metal transition. Above the critical values, the band gap increased again at a different rate, which was presumably due to the competing BM band-filling and band gap renormalization effects, the former inducing a band gap widen...

Nanostructured ceramics by electrospinning

Abstract: Nanostructured ceramics are attractive materials that find potential uses ranging from simple everyday applications like paints and pigments to sophisticated ones such as bioimaging, sensors, etc. The inability to economically synthesize nanoscale ceramic structures in a large scale and simultaneously achieve precise control of their size has restricted their real time application. Electrospinning is an efficient process that can fabricate nanofibers on an industrial scale. During the last 5 years, there has been remarkable progress in applying this process to the fabrication of ceramic nanorods and nanofibers. Ceramic nanofibers are becoming useful and niche materials in several applications owing to their surface dependant and size dependant properties. These advances are reviewed here. The various ceramic nanofiber systems that have been fabricated so far are presented. The physical and chemical property enhancements due to the nanosize have been discussed in detail and the various applications they fi...

Photocurrent spectroscopy of optical absorption enhancement in silicon photodiodes via scattering from surface plasmon polaritons in gold nanoparticles

Abstract: Experimental characterization and finite-element numerical simulations of the electromagnetic interaction between Au nanoparticles positioned atop a Si pn junction photodiode and incident electromagnetic plane waves have been performed as a function of wavelength. The presence of the Au nanoparticles is found to lead to increased electromagnetic field amplitude within the semiconductor, and consequently increased photocurrent response, over a broad range of wavelengths extending upward from the nanoparticle surface plasmon polariton resonance wavelength. At shorter wavelengths, a reduction in electromagnetic field amplitude and a corresponding decrease in photocurrent response in the semiconductor are observed. Numerical simulations reveal that these different behaviors are a consequence of a shift in the phase of the nanoparticle polarizability near the surface plasmon polariton wavelength, leading to interference effects within the semiconductor that vary strongly with wavelength. These observations hav...

Electrical and thermal transport in metallic single-wall carbon nanotubes on insulating substrates

Abstract: We analyze transport in metallic single-wall carbon nanotubes (SWCNTs) on insulating substrates over the bias range up to electrical breakdown in air. To account for Joule self-heating, a temperature-dependent Landauer model for electrical transport is coupled with the heat conduction equation along the nanotube. The electrical breakdown voltage of SWCNTs in air is found to scale linearly with their length, approximately as 5V∕μm; we use this to deduce a thermal conductance between SWCNT and substrate g≈0.17±0.03WK−1m−1 per tube length, which appears limited by the SWCNT-substrate interface rather than the thermal properties of the substrate itself. We examine the phonon scattering mechanisms that limit electron transport, and find the strong temperature dependence of the optical phonon absorption rate to have a remarkable influence on the electrical resistance of micron-length nanotubes. Further analysis reveals that unlike in typical metals, electrons are responsible for less than 15% of the total therm...

Negative dynamic conductivity of graphene with optical pumping

Abstract: We study the dynamic ac conductivity of a nonequilibrium two-dimensional electron-hole system in optically pumped graphene. Considering the contribution of both interband and intraband transitions, we demonstrate that at sufficiently strong pumping the population inversion in graphene can lead to the negative net ac conductivity in the terahertz range of frequencies. This effect might be used in graphene-based coherent sources of terahertz radiation.

Calibration of nonlocal scaling effect parameter for free vibration of carbon nanotubes by molecular dynamics

Abstract: In this paper, the small scaling parameter e0 of the nonlocal Timoshenko beam theory is calibrated for the free vibration problem of single-walled carbon nanotubes (SWCNTs). The calibration exercise is performed by using vibration frequencies generated from molecular dynamics simulations at room temperature. It was found that the calibrated values of e0 are rather different from published values of e0. Instead of a constant value, the calibrated e0 values vary with respect to length-to-diameter ratios, mode shapes, and boundary conditions of the SWCNTs. In addition, the physical meaning of the scaling parameter is explored. The results show that scaling parameter assists in converting the kinetic energy to the strain energy, thus enabling the kinetic energy to be equal to the strain energy. The calibrated e0 presented herein should be useful for researchers who are using the nonlocal beam theories for analysis of micro and nano beams/rods/tubes.

Diffusion lengths of silicon solar cells from luminescence images

Abstract: A method for spatially resolved measurement of the minority carrier diffusion length in silicon wafers and in silicon solar cells is introduced. The method, which is based on measuring the ratio of two luminescence images taken with two different spectral filters, is applicable, in principle, to both photoluminescence and electroluminescence measurements and is demonstrated experimentally by electroluminescence measurements on a multicrystalline silicon solar cell. Good agreement is observed with the diffusion length distribution obtained from a spectrally resolved light beam induced current map. In contrast to the determination of diffusion lengths from one single luminescence image, the method proposed here gives absolute values of the diffusion length and, in comparison, it is much less sensitive to lateral voltage variations across the cell area as caused by local variations of the series resistance. It is also shown that measuring the ratio of two luminescence images allows distinguishing shunts or surface defects from bulk defects.

Periodic ordering of random surface nanostructures induced by femtosecond laser pulses on metals

Abstract: In this paper, we performed a detailed study of the formation of femtosecond laser-induced periodic surface structures (LIPSSs) on platinum and gold at near-damage threshold fluences. We find a unique type of LIPSS entirely covered with nanostructures. A distinctive feature of the nanostructure-covered LIPSS is that its period is appreciably less than that of the regular LIPSS. We show that the reduced period is caused by an increase of the real part of the effective refractive index of the air-metal interface when nanostructures develop and affect the propagation of surface plasmons.

Modeling of electron mobility in gated silicon nanowires at room temperature: Surface roughness scattering, dielectric screening, and band nonparabolicity

Abstract: We present a theoretical study of electron mobility in cylindrical gated silicon nanowires at 300 K based on the Kubo-Greenwood formula and the self-consistent solution of the Schrodinger and Poisson equations. A rigorous surface roughness scattering model is derived, which takes into account the roughness-induced fluctuation of the subband wave function, of the electron charge, and of the interface polarization charge. Dielectric screening of the scattering potential is modeled within the random phase approximation, wherein a generalized dielectric function for a multi-subband quasi-one-dimensional electron gas system is derived accounting for the presence of the gate electrode and the mismatch of the dielectric constant between the semiconductor and gate insulator. A nonparabolic correction method is also presented, which is applied to the calculation of the density of states, the matrix element of the scattering potential, and the generalized Lindhard function. The Coulomb scattering due to the fixed i...

High power impulse magnetron sputtering : Current-voltage-time characteristics indicate the onset of sustained self-sputtering

Abstract: The commonly used current-voltage characteristics are found inadequate for describing the pulsed nature of the high power impulse magnetron sputtering (HIPIMS) discharge; rather, the description needs to be expanded to current-voltage-time characteristics for each initial gas pressure. Using different target materials (Cu, Ti, Nb, C, W, Al, and Cr) and a pulsed constant-voltage supply, it is shown that the HIPIMS discharges typically exhibit an initial pressure dependent current peak followed by a second phase that is power and material dependent. This suggests that the initial phase of a HIPIMS discharge pulse is dominated by gas ions, whereas the later phase has a strong contribution from self-sputtering. For some materials, the discharge switches into a mode of sustained self-sputtering. The very large differences between materials cannot be ascribed to the different sputter yields but they indicate that generation and trapping of secondary electrons play a major role for current-voltage-time characteristics. In particular, it is argued that the sustained self-sputtering phase is associated with the generation of multiply charged ions because only they can cause potential emission of secondary electrons, whereas the yield caused by singly charged metal ions is negligibly small.

Phonon related properties of transition metals, their carbides, and nitrides: A first-principles study

Abstract: Lattice dynamics of body-centered cubic (bcc) Vb-VIb group transition metals (TM), and B1-type monocarbides and mononitrides of IIIb-VIb transition metals are studied by means of first-principles density functional perturbation theory, ultra soft pseudopotentials, and generalized gradient approximation to the exchange-correlation functional. Ground state parameters of transition metals and their compounds are correctly reproduced with the generated ultrasoft pseudopotentials. The calculated phonon spectra of the bcc metals are in excellent agreement with results of inelastic neutron scattering experiments. We show that the superconductivity of transition metal carbides (TMC) and transition metal nitrides (TMN) is related to peculiarities of the phonon spectra, and the anomalies of the spectra are connected to the number of valence electrons in crystals. The calculated electron-phonon interaction constants for TM, TMC, and TMN are in excellent agreement with experimentally determined values. Phonon spectra for a number of monocarbides and mononitrides of transition metals within the cubic NaCl- and hexagonal WC-type structures are predicted. Ideal stoichiometric B1 crystals of ScC, YC, and VC are predicted to be dynamically stable and superconducting materials. We also conclude that YN is a semiconductor.

Using atomistic computer simulations to analyze x-ray diffraction data from metallic glasses

Abstract: We propose a method of using atomistic computer simulations to obtain partial pair correlation functions from wide angle diffraction experiments with metallic liquids and their glasses. In this method, a model is first created using a semiempirical interatomic potential and then an additional atomic force is added to improve the agreement with experimental diffraction data. To illustrate this approach, the structure of an amorphous Cu64.5Zr35.5 alloy is highlighted, where we present the results for the semiempirical many-body potential and fitting to x-ray diffraction data. While only x-ray diffraction data were used in the present work, the method can be easily adapted to the case when there are also data from neutron diffraction or even in combination. Moreover, this method can be employed in the case of multicomponent systems when the data of several diffraction experiments can be combined.

Improved performances of organic light-emitting diodes with metal oxide as anode buffer

Abstract: We demonstrate extremely stable and highly efficient organic light-emitting diodes (OLEDs) based on molybdenum oxide (MoO3) as a buffer layer on indium tin oxide (ITO). The significant features of MoO3 as a buffer layer are that the OLEDs show low operational voltage, high electroluminescence (EL) efficiency and good stability in a wide range of MoO3 thickness. A green OLED with structure of ITO∕MoO3∕N,N′-di(naphthalene-1-yl)-N,N′-diphenyl-benzidene (NPB)∕NPB: tris(8-hydroxyquinoline) aluminum (Alq3):10-(2-benzothiazolyl)-2,3,6,7-tetrahydro-1,1,7,7-tetramethyl-1H, 5H, 11H-(1)-benzopyropyrano(6,7-8-i,j)quinolizin-11-one (C545T)∕Alq3∕LiF∕Al shows a long lifetime of over 50000h at 100cd∕m2 initial luminance, and the power efficiency reaches 15lm∕W. The turn-on voltage is 2.4V, and the operational voltage at 1000cd∕m2 luminance is only 6.9V. The significant enhancement of the EL performance is attributed to the improvement of hole injection and interface stability at anode.

Interaction potential for silicon carbide: A molecular dynamics study of elastic constants and vibrational density of states for crystalline and amorphous silicon carbide

Abstract: An effective interatomic interaction potential for SiC is proposed. The potential consists of two-body and three-body covalent interactions. The two-body potential includes steric repulsions due to atomic sizes, Coulomb interactions resulting from charge transfer between atoms, charge-induced dipole-interactions due to the electronic polarizability of ions, and induced dipole-dipole (van der Waals) interactions. The covalent characters of the Si–C–Si and C–Si–C bonds are described by the three-body potential. The proposed three-body interaction potential is a modification of the Stillinger-Weber form proposed to describe Si. Using the molecular dynamics method, the interaction potential is used to study structural, elastic, and dynamical properties of crystalline (3C), amorphous, and liquid states of SiC for several densities and temperatures. The structural energy for cubic (3C) structure has the lowest energy, followed by the wurtzite (2H) and rock-salt (RS) structures. The pressure for the structural transformation from 3C-to-RS from the common tangent is found to be 90 GPa. For 3C-SiC, our computed elastic constants (C11, C12, and C44), melting temperature, vibrational density-of-states, and specific heat agree well with the experiments. Predictions are made for the elastic constant as a function of density for the crystalline and amorphous phase. Structural correlations, such as pair distribution function and neutron and x-ray static structure factors are calculated for the amorphous and liquid state.

On the performance of different bimetallic combinations in surface plasmon resonance based fiber optic sensors

Abstract: In the present work, we have investigated the capability of different bimetallic combinations to be used in a fiber optic sensor based on the technique of surface plasmon resonance. The metals considered for the present analysis are silver, gold, copper, and aluminum. The performance of the sensor with different bimetallic combinations is evaluated and compared numerically. The performance is analyzed in terms of three parameters: sensitivity, signal-to-noise ratio (SNR), and operating range. On the basis of the comparison and some logical criteria, the best possible bimetallic combination along with requisite thickness distribution is predicted. The bimetallic combination is capable of simultaneously providing the larger values of sensitivity, SNR, and operating range, which is not possible with any single metallic layer.

Operational degradation of organic light-emitting diodes: Mechanism and identification of chemical products

Abstract: Despite the importance of the operational lifetime of organic light-emitting diodes (OLEDs) in practical applications, little is known about the nature of chemical reactions associated with efficiency losses during operation. To gain an insight into a chemical mechanism of operational degradation, we studied operation-induced changes in chemical compositions of fluorescent and phosphorescent OLEDs utilizing carbazole derivatives in emissive layers. We detected substantial losses of the emissive components, including the carbazole-derived host 4,4′-bis(N-carbazolyl)biphenyl (CBP) and, if present, phosphorescent dopant. Several different materials were found only in the degraded OLEDs, and some of them were isolated and identified by nuclear magnetic resonance and mass spectrometry. A similar set of products was found upon UV irradiation of CBP films. Structures of degradation products suggest that the key step in operational degradation of OLEDs is homolytic cleavage of weaker bonds, e.g., an exocyclic C–N...

Interface microstructure engineering by high power impulse magnetron sputtering for the enhancement of adhesion

Abstract: An excellent adhesion of hard coatings to steel substrates is paramount in practically all application areas. Conventional methods utilize Ar glow etching or cathodic arc discharge pretreatments that have the disadvantage of producing weak interfaces or adding droplets, respectively. One tool for interface engineering is high power impulse magnetron sputtering (HIPIMS). HIPIMS is based on conventional sputtering with extremely high peak power densities reaching 3kWcm−2 at current densities of >2Acm−2. HIPIMS of Cr and Nb was used to prepare interfaces on 304 stainless steel and M2 high speed steel (HSS). During the pretreatment, the substrates were biased to Ubias=−600V and Ubias=−1000V in the environment of a HIPIMS of Cr and Nb plasma. The bombarding flux density reached peak values of 300mAcm−2 and consisted of highly ionized metal plasma containing a high proportion of Cr1+ and Nb1+. Pretreatments were also carried out with Ar glow discharge and filtered cathodic arc as comparison. The adhesion was ev...

Analysis of the contact resistance in staggered, top-gate organic field-effect transistors

Abstract: Contact resistance effects are significant in many organic field-effect transistors. Here, we present a detailed analysis of the contact resistance in staggered, top-gate conjugated polymer field-effect transistors. A compact physical model based on the current crowding formalism has been developed. It includes gate modulation of the bulk resistivity of the semiconductor to explain the experimentally observed gate voltage dependence of the contact resistance for different thicknesses of the semiconducting film. The contact resistance is found to be Ohmic. For thick semiconducting films, we have observed a significant asymmetry between source and drain contact resistances with the drain resistances increasing more rapidly with thickness than the source resistance, reflecting the importance of diffusion at the drain contact.

Photoacoustic characterization of carbon nanotube array thermal interfaces

Abstract: This work describes an experimental study of thermal conductance across multiwalled carbon nanotube (CNT) array interfaces, one sided (Si-CNT-Ag) and two sided (Si-CNT-CNT-Cu), using a photoacoustic technique (PA). Well-anchored, dense, and vertically oriented multiwalled CNT arrays have been directly synthesized on Si wafers and pure Cu sheets using plasma-enhanced chemical vapor deposition. With the PA technique, the small interface resistances of the highly conductive CNT interfaces can be measured with accuracy and precision. In addition, the PA technique can resolve the one-sided CNT interface component resistances (Si-CNT and CNT-Ag) and the two-sided CNT interface component resistances (Si-CNT, CNT-CNT, and CNT-Cu) and can estimate the thermal diffusivity of the CNT layers. The thermal contact resistances of the one- and two-sided CNT interfaces measured using the PA technique are 15.8±0.9 and 4.0±0.4mm2K∕W, respectively, at moderate pressure. These results compare favorably with those obtained using a steady state, one-dimensional reference bar method; however, the uncertainty range is much narrower. The one-sided CNT thermal interface resistance is dominated by the resistance between the free CNT array tips and their opposing substrate (CNT-Ag), which is measured to be 14.0±0.9mm2K∕W. The two-sided CNT thermal interface resistance is dominated by the resistance between the free tips of the mating CNT arrays (CNT-CNT), which is estimated to be 2.1±0.4mm2K∕W.

Review of zincblende ZnO: Stability of metastable ZnO phases

Abstract: This research is supported in part by the Australian Research Council, Australia, Institute of Physical and Chemical Research RIKEN, and the Ministry of Education, Science, Sports and Culture, Japan.