Showing papers in "Journal of Applied Physics in 2019"

AlScN: A III-V semiconductor based ferroelectric

Abstract: Ferroelectric switching is unambiguously demonstrated for the first time in a III-V semiconductor based material: Al1-xScxN—A discovery which could help to satisfy the urgent demand for thin film ferroelectrics with high performance and good technological compatibility with generic semiconductor technology which arises from a multitude of memory, micro/nano-actuator, and emerging applications based on controlling electrical polarization. The appearance of ferroelectricity in Al1-xScxN can be related to the continuous distortion of the original wurtzite-type crystal structure towards a layered-hexagonal structure with increasing Sc content and tensile strain, which is expected to be extendable to other III-nitride based solid solutions. Coercive fields which are systematically adjustable by more than 3 MV/cm, high remnant polarizations in excess of 100 μC/cm2—which constitute the first experimental estimate of the previously inaccessible spontaneous polarization in a III-nitride based material, an almost ideally square-like hysteresis resulting in excellent piezoelectric linearity over a wide strain interval from −0.3% to + 0.4% and a paraelectric transition temperature in excess of 600 °C are confirmed. This intriguing combination of properties is to our knowledge as of now unprecedented in the field of polycrystalline ferroelectric thin films and promises to significantly advance the commencing integration of ferroelectric functionality to micro- and nanotechnology, while at the same time providing substantial insight to one of the central open questions of the III-nitride semiconductors—that of their spontaneous polarization.

Introduction to antiferromagnetic magnons

Abstract: The elementary spin excitations in strongly magnetic materials are collective spin deviations, or spin waves, whose quanta are called magnons. Interest in the experimental and theoretical investigation of magnons attracted many groups worldwide about 4–6 decades ago and then waned for some time. In recent years, with the advent of the field of spintronics, the area of magnonics has gained renewed attention. New phenomena have been discovered experimentally, and others have been predicted theoretically. In this tutorial, we briefly review the basic concepts of magnons in antiferromagnetic (AF) materials. Initially, we present a semiclassical view of the equilibrium spin configurations and of the antiferromagnetic resonance in AF materials with two types of magnetic anisotropy, easy-axis and easy-plane. Then, we present a quantum theory of magnons for these materials and apply the results to two important AF insulators, MnF2 and NiO. Finally, we introduce the concept of antiferromagnetic magnonic spin current that plays a key role in several phenomena in antiferromagnetic spintronics.

Potential clinical applications of terahertz radiation

Abstract: Terahertz radiation has significant potential in medical diagnosis and treatment because its frequency range corresponds to the characteristic energy of biomolecular motion. Advantageously, terahertz-specific low energy does not cause the ionization of biomolecules. In this paper, we review several state-of-the-art terahertz biomedical techniques and results and suggest potential techniques that may be applicable in real-world clinics in the near future. First, some techniques for enhancing the penetration depth into wet biological tissues are surveyed. Endoscopy and otoscopy methods for approaching internal organs are then discussed. The operation principles of sensors utilizing terahertz radiation are explained, and certain sensing examples related to blood disorders, diabetes, and breathing conditions are presented. The greatest potential of terahertz radiation in biomedical applications so far has been in cancer imaging, because terahertz radiation is ideal for measuring the superficial soft tissues in which most cancers occur. The examples presented herein include skin, oral, gastric, breast, and brain cancers. In search of a cancer-specific signal using terahertz radiation, methylated malignant DNA has been found to exhibit a characteristic resonance at approximately 1.65 THz. This resonance may help treat cancer through the demethylation of malignant DNA using high-power terahertz irradiation at this specific frequency, as well as serving as a potential cancer biomarker.

Frontiers of magnetic force microscopy

Abstract: Since it was first demonstrated in 1987, magnetic force microscopy (MFM) has become a truly widespread and commonly used characterization technique that has been applied to a variety of research and industrial applications. Some of the main advantages of the method includes its high spatial resolution (typically ∼50 nm), ability to work in variable temperature and applied magnetic fields, versatility, and simplicity in operation, all without almost any need for sample preparation. However, for most commercial systems, the technique has historically provided only qualitative information, and the number of available modes was typically limited, thus not reflecting the experimental demands. Additionally, the range of samples under study was largely restricted to “classic” ferromagnetic samples (typically, thin films or patterned nanostructures). Throughout this Perspective article, the recent progress and development of MFM is described, followed by a summary of the current state-of-the-art techniques and objects for study. Finally, the future of this fascinating field is discussed in the context of emerging instrumental and material developments. Aspects including quantitative MFM, the accurate interpretation of the MFM images, new instrumentation, probe-engineering alternatives, and applications of MFM to new (often interdisciplinary) areas of the materials science, physics, and biology will be discussed. We first describe the physical principles of MFM, specifically paying attention to common artifacts frequently occurring in MFM measurements; then, we present a comprehensive review of the recent developments in the MFM modes, instrumentation, and the main application areas; finally, the importance of the technique is speculated upon for emerging or anticipated to emerge fields including skyrmions, 2D-materials, and topological insulators.

Phonon properties and thermal conductivity from first principles, lattice dynamics, and the Boltzmann transport equation

Abstract: A computational framework for predicting phonon frequencies, group velocities, scattering rates, and the resulting lattice thermal conductivity is described. The underlying theory and implementation suggestions are also provided. By using input from first principles calculations and taking advantage of advances in computational power, this framework has enabled thermal conductivity predictions that agree with experimental measurements for diverse crystalline materials over a wide range of temperatures. Density functional theory and density functional perturbation theory calculations are first used to obtain the harmonic and cubic force constants. The harmonic force constants are the input to harmonic lattice dynamics calculations, which provide the phonon frequencies and eigenvectors. The harmonic properties and the cubic force constants are then used with perturbation theory and/or phenomenological models to determine intrinsic and extrinsic scattering rates. The full set of phonon properties is then used to solve the Boltzmann transport equation for the mode populations and thermal conductivity. The extension of the framework to include higher-order processes, capture finite temperature effects, and model alloys is described. A case study on silicon is presented that provides benchmarking and convergence data. Available packages that implement the framework are compared.

Materials issues and devices of α- and β-Ga2O3

Abstract: Ga2O3 is an ultrawide bandgap semiconductor with a bandgap energy of 4.5–5.3 eV (depending on its crystal structure), which is much greater than those of conventional wide bandgap semiconductors such as SiC and GaN (3.3 eV and 3.4 eV, respectively). Therefore, Ga2O3 is promising for future power device applications, and further high-performance is expected compared to those of SiC or GaN power devices, which are currently in the development stage for commercial use. Ga2O3 crystallizes into various structures. Among them, promising results have already been reported for the most stable β-Ga2O3, and for α-Ga2O3, which has the largest bandgap energy of 5.3 eV. In this article, we overview state-of-the-art technologies of β-Ga2O3 and α-Ga2O3 for future power device applications. We will give a perspective on the advantages and disadvantages of these two phases in the context of comparing the two most promising polymorphs, concerning material properties, bulk crystal growth, epitaxial growth, device fabrication, and resulting device performance.

Resistive gas sensors based on metal-oxide nanowires

Abstract: Gas sensors are indispensable for detecting harmful gases in the environment. The morphology of a gas sensor significantly affects its sensing performance. Among the various morphologies, one-dimensional nanowires (NWs) have numerous advantages, such as high surface area, small dimensions, high charge-carrier concentrations, facile synthesis, high crystallinity, and stability. These excellent properties make NWs promising for gas sensing. Resistive-type metal oxide-based gas sensors are widely used for monitoring various toxic gases and volatile organic compounds. In this tutorial, the synthesis of metal oxide NWs, the fabrication of gas sensors, and their sensing mechanisms are discussed. Different types of NW-based gas sensors, such as single NWs, branched NWs, noble metal-functionalized NWs, heterojunction NWs, self-heating NWs, ultraviolet-activated NWs, core–shell NWs, and electronic-nose-based NWs, are comprehensively presented. Finally, we discuss future directions with regard to the improvement and potential of these NW gas sensors. This tutorial aims to provide an overview of the fundamental principle and state-of-the-art technology, which is useful for researchers and students working in the field of resistive-type NW-based gas sensors.

A model of hardness and fracture toughness of solids

Abstract: Hardness and fracture toughness are some of the most important mechanical properties. Here, we propose a simple model that uses only the elastic properties to calculate the hardness and fracture toughness. Its accuracy is checked by comparison with other available models and experimental data for metals, covalent and ionic crystals, and bulk metallic glasses. We found the model to perform well on all datasets for both hardness and fracture toughness, while for auxetic materials (i.e., those having a negative Poisson’s ratio), it turned out to be the only model that gives reasonable hardness. Predictions are made for several materials for which no experimental data exist.

Mitigating wakeup effect and improving endurance of ferroelectric HfO2-ZrO2 thin films by careful La-doping

Abstract: The crystalline structure and electrical response of La-doped HfO2-ZrO2 thin films of which processing temperature did not exceed 400 °C were examined, where the La-doping concentration was varied from zero to ≈2 mol. %. The film structure and associated properties were found to vary sensitively with the minute variation in the La-concentration, where the ferroelectric response at low La-concentration ( ≈1 mol. %, which was accompanied by a significant increase in dielectric permittivity. La-doping was found to be very effective in inhibiting the monoclinic phase formation and in decreasing the leakage current. Notably, the high coercive field, which was one of the most significant problems in this material system, could be decreased by ∼35% at the most promising La-concentration of 0.7 mol. %. As a result, a highly promising field cycling endurance up to 1011 cycles could be secured while maintaining a high remnant polarization value (≥25 μC/cm2). This is one of the best results in this field of the authors' knowledge.

Simple and accurate model of fracture toughness of solids

Abstract: Fracture toughness K I C plays an important role in materials design. Along with numerous experimental methods to measure the fracture toughness of materials, its understanding and theoretical prediction are very important. However, theoretical prediction of fracture toughness is challenging. By investigating the correlation between fracture toughness and the elastic properties of materials, we have constructed a fracture toughness model for covalent and ionic crystals. Furthermore, by introducing an enhancement factor, which is determined by the density of states at the Fermi level and atomic electronegativities, we have constructed a universal model of fracture toughness for covalent and ionic crystals, metals, and intermetallics. The predicted fracture toughnesses are in good agreement with experimental values for a series of materials. All the ingredients of the proposed model of fracture toughness can be obtained from first-principles calculations or from experiments, which makes it suitable for practical applications.

Dielectric nanoantennas to manipulate solid-state light emission

Abstract: Thanks to their enhanced and confined optical near-fields, broadband subwavelength resonators have the ability to enhance the spontaneous emission rate and brightness of solid-state emitters at room temperature. Over the last few years, high-index dielectrics have emerged as an alternative platform to plasmonic materials in order to design nanoresonators/optical nanoantennas with low ohmic losses. In particular, the excitation of electric and magnetic multipolar modes in dielectric resonators provides numerous degrees of freedom to manipulate the directivity and radiative decay rates of electric or magnetic quantum emitters. We review recent theoretical and experimental applications of dielectric nanoantennas to enhance or control decay rates of both electric and magnetic emitters but also to manipulate their radiation pattern through the coherent excitation of electric and magnetic modes; before discussing perspectives of this emerging field.

A perspective on topological nanophotonics: Current status and future challenges

Abstract: Topological photonic systems, with their ability to host states protected against disorder and perturbation, allow us to do with photons what topological insulators do with electrons. Topological photonics can refer to electronic systems coupled with light or purely photonic setups. By shrinking these systems to the nanoscale, we can harness the enhanced sensitivity observed in nanoscale structures and combine this with the protection of the topological photonic states, allowing us to design photonic local density of states and to push towards one of the ultimate goals of modern science: the precise control of photons at the nanoscale. This is paramount for both nanotechnological applications and fundamental research in light matter problems. For purely photonic systems, we work with bosonic rather than fermionic states, so the implementation of topology in these systems requires new paradigms. Trying to face these challenges has helped in the creation of the exciting new field of topological nanophotonics, with far-reaching applications. In this article, we review milestones in topological photonics and discuss how they can be built upon at the nanoscale.

3D nanoprinting via focused electron beams

Abstract: Additive manufacturing of three-dimensional objects on the nanoscale is a very relevant topic but still a highly challenging task. Among the pool of nanofabrication techniques, focused electron beam induced deposition (FEBID) has recently developed from a trial-and-error laboratory method to a predictable 3D nanoprinting technology with unique advantages. This perspective article first introduces the basic principles of 3D-FEBID, followed by an overview of historical developments with a particular emphasis on the last three years. Here, we examine different aspects of 3D nanoprinting such as the instrumental setup, fundamental growth mechanisms, simulations, computer aided design software solutions, material properties, and application studies. For each aspect, the individual challenges and limitations are discussed. In addition, we share our outlook about possible solutions and studies currently under investigation. As a perspective, we also address the most urgent milestones of the future and speculate on applications ranging from optics to mechanics, magnetics, and electronics, all of them benefiting from the recently improved 3D FEBID synthesis technique.

Perspective on ab initio phonon thermal transport

Abstract: Coupling of the Peierls-Boltzmann equation with density functional theory paved the way for predictive thermal materials discovery and a variety of new physical insights into vibrational transport behaviors. Rapid theoretical and numerical developments have generated a wealth of thermal conductivity data and understanding of a wide variety of materials—1D, 2D, and bulk—for thermoelectric and thermal management applications. Nonetheless, modern ab initio descriptions of phonon thermal transport face challenges regarding the effects of defects, disorder, structural complexity, strong anharmonicity, quasiparticle couplings, and time and spatially varying perturbations. Highlighting recent research on these issues, this perspective explores opportunities to expand current ab initio phonon transport techniques beyond the paradigm of weakly perturbed crystals, to the wider variety of materials possible. Recent developments in phonon-defect interactions, complexity, disorder and anharmonicity, hydrodynamic transport, and the rising roles of molecular dynamics simulations, high throughput, and machine learning tools are included in this perspective. As more sophisticated theoretical and computational methods continue to advance thermal transport predictions, novel vibrational physics and thermally functional materials will be discovered for improved energy technologies.

Effect of composition, annealing temperature, and high pressure torsion on structure and hardness of Ti–V and Ti–V–Al alloys

Abstract: The severe plastic deformation strongly changes the microstructure and properties of titanium-based alloys. The structure and microhardness of four binary and ternary titanium-based alloys (Ti–4 wt. % V, Ti–4 wt. % V–6 wt. % Al, Ti–4 wt. % V–3 wt. % Al, and Ti–5 wt. % V–6 wt. % Al) have been studied after preliminary annealing and following high pressure torsion (HPT). After HPT, the Ti–4 wt. % V alloy contains much less (ωTi) phase than Ti–4 wt. % Fe and Ti–4 wt. % Co alloys. The addition of aluminum to the binary Ti–V alloys completely suppresses the formation of the high-pressure (ωTi)-phase. HPT leads to the partial decomposition of the annealed (αTi) solid solution and “purification” of α-phase similar to that in the Ti–Fe alloys. After HPT of the studied ternary alloys, the (βTi)-phase completely disappears and nanoparticles of Ti2Fe form instead. This fact explains why the addition of aluminum leads to the increase of microhardness of alloys after annealing between 600 °C and 950 °C and after HPT-treatment. The increase of the temperature of the preliminary annealing also increases the hardness of all alloys after HPT-treatment.

Recent developments in Earth-abundant copper-sulfide thermoelectric materials

Abstract: The ability of thermoelectric devices to convert waste heat into useful electrical power has stimulated a remarkable growth in research into thermoelectric materials. There is, however, a growing recognition that limited reserves of tellurium, together with the reduction in performance that occurs at elevated temperatures, places constraints on the widespread implementation of thermoelectric technology based on the current generation of telluride-based devices. Metal sulfides have attracted considerable attention as potential tellurium-free alternatives. This perspective provides an overview of the key characteristics of sulfide thermoelectrics and the advantages they offer in the development of devices for energy recovery in the temperature range 373 ≤ T/K ≤ 773. The structures and properties of a group of synthetic materials, related to the minerals chalcocite (Cu2S), stannite (Cu2FeSnS4)/kesterite (Cu2SnS4), chalcopyrite (CuFeS2), bornite (Cu5FeS4), colusite [Cu26V2(As,Sn,Sb)6S32], and tetrahedrite [(Cu,Fe)12Sb4S13], are discussed. In addition to all being composed of Earth-abundant elements, these sulfides share a common tetrahedral CuS4 structural building block. The use of chemical substitution to manipulate electrical and thermal transport properties is described, and common features are identified. This includes the presence of low-energy vibrational modes, the onset of copper-ion mobility, and the emergence of a liquid-like sublattice, which serve to reduce thermal conductivity. Issues associated with materials' stability during synthesis, consolidation, and device operation due to sulfur volatilization and migration of mobile copper ions are also highlighted. Future prospects for sulfide thermoelectrics are discussed in the light of the performance of materials investigated to date.

Lattice resonances in dielectric metasurfaces

Abstract: We present a numerical investigation of collective resonances in lattices of dielectric nanoparticles. These resonances emerge from the enhanced radiative coupling of localized Mie resonances in the individual nanoparticles. We distinguish two similar systems: a lattice of silicon nanoparticles homogeneously embedded in a dielectric and a lattice of silicon nanoparticles in an optical waveguide. The radiative coupling is provided by diffraction orders in the plane of the array for the former system or by guided modes in the optical waveguide for the latter one. The different coupling leads to distinct lattice resonances in the metasurface defined by the array of silicon nanoparticles. These resonances have been extensively investigated in metallic nanoparticle arrays, but remain highly unexplored in fully dielectric systems. We describe the pronounced differences in the intensity enhancement and field distributions for the two systems, providing valuable information for the design and optimization of optical components based on dielectric lattice resonances.

Large-scale array of resonant-tunneling-diode terahertz oscillators for high output power at 1 THz

Abstract: We proposed and fabricated large-scale arrays of resonant tunneling diode (RTD) oscillators for high-output-power terahertz (THz) sources. The array element is composed of an RTD, a slot resonator, and a dipole array antenna on a dielectric layer stacked on the RTD. In this structure, the output power is radiated in the upward direction of the substrate without a hemispherical silicon lens. The dipole array antenna was designed so that the average output power determined by the variation in the size of the RTD in the array was maximized. The experimental output power was proportional to the element number, and its value was 0.73 mW for an 89-element array at ∼1 THz in a pulsed mode with a repetition rate of 300 Hz and a duty ratio of 10%. Multiple peaks were observed in the oscillation spectra, because the elements were not intentionally coupled with each other. The average output power per element was 9 μW in the array, which was lower than that of the separated single oscillators (21 μW). Possible causes of this difference are discussed.

Strain engineering in functional 2-dimensional materials

Abstract: Two-dimensional (2D) materials have attracted growing interest in the past decade because of their extraordinary properties and great potential in a wide range of applications. Strain is regarded as a simple yet powerful tool to modulate the properties of 2D materials, as it directly affects lattice structures and thus alters electronic structures. In this tutorial, we first discuss the fundamentals of strain engineering in 2D materials from macro and atomic perspective and then review some approaches to strain engineering as well as their merits and drawbacks. After that, we examine in detail how strain modulates physical and chemical properties in various types of 2D materials. In the last section of this tutorial, the applications of strain engineering in functional 2D materials are exhibited.

Enhanced Sn incorporation in GeSn epitaxial semiconductors via strain relaxation

Abstract: We investigate the effect of strain on the morphology and composition of GeSn layers grown on Ge/Si virtual substrates. By using buffer layers with controlled thickness and Sn content, we demonstrate that the lattice parameter can be tuned to reduce the strain in the growing top layer (TL) leading to the incorporation of Sn up to 18 at. %. For a 7 at. % bottom layer (BL) and a 11-13 at. % middle layer (ML), the optimal total thickness tGeSn = 250-400 nm provides a large degree of strain relaxation without apparent nucleation of dislocations in the TL, while incorporating Sn at concentrations of 15 at. % and higher. Besides facilitating the growth of Sn-rich GeSn, the engineering of the lattice parameter also suppresses the gradient in Sn content in the TL, yielding a uniform composition. We correlate the formation of the surface cross-hatch pattern with the critical thickness hG for the nucleation and gliding of misfit dislocations at the GeSn-Ge interface that originate from gliding of pre-existing threading dislocations in the substrate. When the GeSn layer thickness raises above a second critical thickness hN, multiple interactions between dislocations take place, leading to a more extended defective ML/BL, thus promoting additional strain relaxation and reduces the compositional gradient in the ML. From these studies, we infer that the growth rate and the Ge-hydride precursors seem to have a limited influence on the growth kinetics, while lowering temperature and enhancing strain relaxation are central in controlling the composition of GeSn. These results contribute to the fundamental understanding of the growth of metastable, Sn-containing group-IV semiconductors, which is crucial to improve the fabrication and design of silicon-compatible mid-infrared photonic devices.

High-temperature photocurrent mechanism of β-Ga2O3 based metal-semiconductor-metal solar-blind photodetectors

Abstract: High-temperature operation of metal–semiconductor–metal (MSM) UV photodetectors fabricated on pulsed laser deposited β-Ga2O3 thin films has been investigated. These photodetectors were operated up to 250 °C temperature under 255 nm illumination. The photo to dark current ratio of about 7100 was observed at room temperature and 2.3 at a high temperature of 250 °C with 10 V applied bias. A decline in photocurrent was observed until a temperature of 150 °C beyond which it increased with temperature up to 250 °C. The suppression of the UV and blue band was also observed in the normalized spectral response curve above 150 °C temperature. Temperature-dependent rise and decay times of temporal response were analyzed to understand the associated photocurrent mechanism at high temperatures. Electron–phonon interaction and self-trapped holes were found to influence the photoresponse in the devices. The obtained results are encouraging and significant for high-temperature applications of β-Ga2O3 MSM deep UV photodetectors.

Thermal conductivity of crystalline AlN and the influence of atomic-scale defects

Abstract: Aluminum nitride (AlN) plays a key role in modern power electronics and deep-ultraviolet photonics, where an understanding of its thermal properties is essential. Here, we measure the thermal conductivity of crystalline AlN by the 3ω method, finding that it ranges from 674 ± 56 Wm−1 K−1 at 100 K to 186 ± 7 Wm−1 K−1 at 400 K, with a value of 237 ± 6 Wm−1 K−1 at room temperature. We compare these data with analytical models and first-principles calculations, taking into account atomic-scale defects (O, Si, C impurities, and Al vacancies). We find that Al vacancies play the greatest role in reducing thermal conductivity because of the largest mass-difference scattering. Modeling also reveals that 10% of heat conduction is contributed by phonons with long mean free paths (MFPs), over ∼7 μm at room temperature, and 50% by phonons with MFPs over ∼0.3 μm. Consequently, the effective thermal conductivity of AlN is strongly reduced in submicrometer thin films or devices due to phonon-boundary scattering.

Two-dimensional carbon nitride (2DCN) nanosheets: Tuning of novel electronic and magnetic properties by hydrogenation, atom substitution and defect engineering

Abstract: By employing first-principles calculations within the framework of density functional theory, we investigated the structural, electronic, and magnetic properties of graphene and various two-dimensional carbon-nitride (2DNC) nanosheets. The different 2DCN gives rise to diverse electronic properties such as metals ( C 3 N 2), semimetals ( C 4 N and C 9 N 4), half-metals ( C 4 N 3), ferromagnetic-metals ( C 9 N 7), semiconductors ( C 2 N, C 3 N, C 3 N 4, C 6 N 6, and C 6 N 8), spin-glass semiconductors ( C 10 N 9 and C 14 N 12), and insulators ( C 2 N 2). Furthermore, the effects of adsorption and substitution of hydrogen atoms as well as N-vacancy defects on the electronic and magnetic properties are systematically studied. The introduction of point defects, including N vacancies, interstitial H impurity into graphene and different 2DCN crystals, results in very different band structures. Defect engineering leads to the discovery of potentially exotic properties that make 2DCN interesting for future investigations and emerging technological applications with precisely tailored properties. These properties can be useful for applications in various fields such as catalysis, energy storage, nanoelectronic devices, spintronics, optoelectronics, and nanosensors.

Superconducting optoelectronic loop neurons

Abstract: Superconducting optoelectronic hardware has been proposed for large-scale neural computing. In this work, we expand upon the circuit and network designs previously introduced. We investigate circuits using superconducting single-photon detectors and Josephson junctions to perform signal reception, synaptic weighting, and integration. Designs are presented for synapses and neurons that perform integration of rate-coded signals as well as detect coincidence events for temporal coding. A neuron with a single integration loop can receive input from thousands of synaptic connections, and many such loops can be employed for dendritic processing. We show that a synaptic weight can be modified via a superconducting flux-storage loop inductively coupled to the current bias of the synapse. Synapses with hundreds of stable states are designed. Spike-timing-dependent plasticity can be implemented using two photons to strengthen and two photons to weaken the synaptic weight via Hebbian-type learning rules. In addition to the synaptic receiver and plasticity circuits, we describe an amplifier chain that converts the current pulse generated when a neuron reaches threshold to a voltage pulse sufficient to produce light from a semiconductor diode. This light is the signal used to communicate between neurons in the network. We analyze the performance of the elements in the amplifier chain to calculate the energy consumption per photon created. The speed of the amplification sequence allows neuronal firing up to at least 20 MHz, independent of connectivity. We consider these neurons in network configurations to investigate near-term technological potential and long-term physical limitations. By modeling the physical size of superconducting optoelectronic neurons, we calculate the area of these networks. A system with 8100 neurons and 330 430 total synapses will fit on a 1 × 1 cm 2 die. Systems of millions of neurons with hundreds of millions of synapses will fit on a 300 mm wafer. For multiwafer assemblies, communication at light speed enables a neuronal pool the size of a large data center ( 10 5 m 2) comprised of trillions of neurons with coherent oscillations at 1 MHz.

Experimental determination of the electro-acoustic properties of thin film AlScN using surface acoustic wave resonators

Abstract: In this work, all electroacoustic material parameters, i.e., the elastic, piezoelectric, and dielectric coefficients, as well as the mass density, were determined experimentally for wurtzite aluminum scandium nitride (Al 1 − xSc xN) for a wide range of Sc concentrations of up to x = 0.32 from the same material source for the first time. Additionally, the mass density and piezoelectric coefficient were determined even up to x = 0.42. Two sets of 1 μm-thick AlScN(0001) thin films were deposited on Si(001) using reactive pulsed-DC magnetron cosputtering. One set of thin films was used to determine the a- and c- lattice parameters and the effective relative dielectric coefficient e 33 , f, using X-ray diffraction and capacitive measurements, respectively. Lattice parameters were then used to extract average internal parameter u, bond length, and bond angle, as well as mass density, as a function of Sc concentration. Density functional theory calculations were performed to provide the equilibrium lattice parameters a, c, and u, as well as the bond angle and the bond lengths for wurtzite-AlN and layered hexagonal-ScN. The second set of films was used to fabricate surface acoustic wave (SAW) resonators with wavelengths λ from 2 up to 24 μm. The SAW dispersion in conjunction with finite element modeling fitting was used to extract the elastic stiffness as well as the piezoelectric coefficients. The overall evolution of the material parameters and the change of the crystal structure as a function of Sc concentration is discussed in order to provide a possible explanation of the observed behavior.

Room temperature semiconductor detectors for nuclear security

Abstract: Preventing radioactive sources from being used for harmful purposes is a global challenge. A requirement for solving the challenge is developing radiation detectors that are efficient, sensitive, and practical. Room temperature semiconductor detectors (RTSDs) are an important class of gamma-ray sensors because they can generate high-resolution gamma-ray spectra at ambient operating temperatures. A number of diverse and stringent requirements must be met for semiconducting materials to serve as sensors in RTSD spectrometers, which limits the number of candidates of interest that receive attention and undergo focused research and development efforts. Despite this, the development of new compounds for sensors in RTSDs is a thriving research field, and a number of materials with stunning potential as RTSD materials have emerged within the last decade. In this perspective, the state of the art in RTSD materials is examined, and emerging semiconducting compounds are reviewed. The highly developed CdTe, CdZnTe, HgI2, and TlBr are first discussed to highlight the potential that can emerge from RTSD compounds in advanced stages of technological development. Thereafter, emerging compounds are reviewed by class from chalcogenides, iodides and chalcohalides, and organic-inorganic hybrid compounds. This work provides both a compilation of the physical and electronic properties of the emerging RTSD candidates and a perspective on the importance of material properties for the future of compounds that can transform the field of radiation detection science.

Tomorrow’s micromagnetic simulations

Abstract: Micromagnetic simulations are a valuable tool to increase our understanding of nanomagnetic systems and to guide experiments through parameter spaces that would otherwise be difficult and expensive to navigate. To fulfill this task, simulations have always pushed the limits of what is possible in terms of software and hardware. In this perspective, we give an overview of the current state of the art in micromagnetic simulations of ferromagnetic materials followed by our opinion of what tomorrow’s simulations will look like. Recently, the focus has shifted away from exclusively trying to achieve faster simulations, toward extending pure micromagnetic calculations to a multiphysics approach. We present an analysis of how the performance of the simulations is affected by the simulation details and hardware specifications (specific to the graphics processing unit-accelerated micromagnetic software package mumax 3), which sheds light on how micromagnetic simulations can maximally exploit the available computational power. Finally, we discuss how micromagnetic simulations can benefit from new hardware paradigms like graphics cards aimed at machine learning.

Understanding the validity of impedance and modulus spectroscopy on exploring electrical heterogeneity in dielectric ceramics

Abstract: Combined modulus and impedance spectra are widely employed to explore electrical inhomogeneity and carriers' behaviors in dielectric ceramics based on equivalent circuit. However, discrepancies are found between practical dielectric responses and widely proposed equivalent circuits. Taking ZnO varistor ceramics as an example, a low-frequency dielectric relaxation, which can be detected in practical dielectric spectroscopy, is overlooked in simulated dielectric spectroscopy based on the proposed equivalent circuit according to modulus and impedance spectra. Therefore, equivalent circuits are frequently incomplete because the real low-frequency dielectric response is unable to be characterized from them. The problem originates from debatable understanding of frequency responses in modulus and impedance spectra. The low-frequency peak in modulus spectroscopy is proved originating from DC conductance instead of a real dielectric relaxation and the involvement of DC conductance component makes a low-frequency dielectric relaxation unable to be characterized in modulus spectroscopy. Therefore, improved dielectric spectroscopy eliminating the component of DC conductance is proposed and a clear peak corresponding to the low-frequency dielectric relaxation appears. In addition, a modified equivalent circuit which is in accordance with practical dielectric responses in not only modulus and impedance spectra but also dielectric spectroscopy is presented.

Van der Waals heterostructures of P, BSe, and SiC monolayers

Abstract: Electronic structure, optical, and photocatalytic properties of P, BSe, and SiC monolayers and their van der Waals heterostructures are investigated by (hybrid) first-principle calculations. The stability of the heterostructures and their corresponding induced-strain/unstrain monolayers are confirmed by the phonon spectra calculations. Similar to the corresponding parent monolayers, P-BSe (BSe-SiC) heterostructures are indirect type-II (type-I) bandgap semiconductors. A tensile strain of 10% (2%) transforms P-BSe (BSe-SiC) to type-I (type-II) direct bandgap nature. Interestingly, irrespective of the corresponding monolayers, the P-SiC heterostructure is a direct bandgap (type-II) semiconductor. The calculated electron and hole carrier mobilities of these heterostructures are in the range of 1.2 × 10 4 cm 2 / Vs to 68.56 × 10 4 cm 2 / Vs. Furthermore, absorption spectra are calculated to understand the optical behavior of these systems, where the lowest energy transitions are dominated by excitons. The valence and conduction band edges straddle the standard redox potentials in P-BSe, BSe-SiC, and P-SiC (strained) heterostructures, making them promising candidates for water splitting in the acidic solution. An induced compressive strain of 3.5% makes P suitable for water splitting at pH = 0.

First-principles study of electronic, optical and thermal transport properties of group III–VI monolayer MX (M = Ga, In; X = S, Se)

Abstract: Two-dimensional (2D) GaS, GaSe, and InSe were reported to be semiconductors and have been recently fabricated with potential applications in photoelectrics, where in-depth understanding from electronic structure is necessary. In addition, the thermal transport properties play a key role as to the thermal stability and the efficient heat dissipation for device operation, which are also necessary to be addressed. In this paper, we present a systematic first-principles study on the electronic, optical, and thermal transport properties for the representative group III–VI monolayer GaS, GaSe, and InSe. Our results indicate that monolayer GaS, GaSe, and InSe are semiconductors with an indirect bandgap. The predominant influence of interband transitions due to the large bandgap causes monolayer GaSe to possess the highest absorptivity along both “in-plane” and “out-of-plane” directions compared to the other two systems. Moreover, the lattice thermal conductivities (κL ) of these materials are found to be inversely proportional to their average atomic mass, but the decrease in thermal conductivity from GaS to GaSe is negligible in comparison to that of GaSe to InSe with a nearly equivalent mass difference. It is found that the underlying mechanism lies in the larger phonon relaxation time of GaSe caused by weaker anharmonicity. Our study provides a comprehensive understanding of the inherent physical properties of monolayer GaS, GaSe, and InSe, which would benefit their future applications in photoelectrics.