Showing papers in "Journal of Crystal Growth in 1985"

TL;DR: In this paper, the formation and properties of porous silicon formed by anodising silicon under a wide range of conditions were investigated and the currentvoltage characteristics of the silicon-hydrofluoric acid system were presented.

TL;DR: In this paper, a cryomicroscope was used to determine critical interface velocities marking the transition between repulsion and entrapment of spherical latex particles by an advancing ice-liquid interface.

TL;DR: In this paper, it was shown that in the absence of sodium, molecular attachment by the TPRE mechanism is incidental but in the presence of sodium this is the dominant growth mechanism.

TL;DR: A phosphorus-doped silicon crystal of 8 mm diameter and 10 mm length has been grown by the floating zone method at a rate of 5 mm/min during the (6 min) weightless phase of a rocket flight as discussed by the authors.

TL;DR: The surface tension of liquid gallium has been measured using the sessile drop technique in an Auger spectrometer as discussed by the authors, where the surface tension in mJ/sq m is found to decrease linearly with increasing temperature and may be represented as 708-0.66(T-29.8), where T is the temperature in centigrade.

TL;DR: In this paper, the binding energies of the acceptor impurities in ZnTe and CdTe have been analyzed and the relative importance of impurities and intrinsic defects has been discussed.

TL;DR: In this paper, the experimental results are in good agreement with Trivedi's theoretical model as far as dendrite growth is concerned, when the growth conditions are close to the cell-to-dendrite transition certain discrepancies appear.

TL;DR: In this paper, extensive characterizations of nominally undoped, Ga-doped, and P-Doped ZnSe grown on (001)GaAs substrate have been made, and the free exciton emission line split into two lines due to the residual strain.

TL;DR: In this article, a GaAs epitaxial layer is selectively grown on the unmasked area, while no deposition of polycrystalline GaAs occurs on the SiN x film.

TL;DR: In this article, a general explanation of induced morphology crystal aggregates of BaCO3, SrCO3 and CaCO3 grown in silica gel is described, and the matrix surrounding the crystallites is shown to be formed by a metal carbonate silicate membrane, with diverse degree of two-dimensional order.

TL;DR: In this paper, the effectiveness of several experimental approaches aimed at compensating for the interface effect is investigated using a finite element thermal model of vertical Bridgman growth, and the results indicate that attainment of a flat growth interface is not possible except in highly idealized cases.

TL;DR: In this paper, the authors investigated the carbon fiber length distributions produced by particles from five different types of iron-containing catalyst materials and showed that the distribution of fiber lengths is an exponential function in which the number of fibers n having a given length l is proportional to exp( − cl).

TL;DR: In this article, high doses (1.5x1018 ions cm−2) of oxygen ions were implanted at 200 keV into a silicon wafer kept at 700°C throughout the implantation.

TL;DR: In this article, the thermal diffusivity, Prandtl number and Grashof number of molten GaAs, InP, and GaSb, all necessary parameters in coupled fluid flow and heat transfer modeling of crystal growth were determined.

TL;DR: In this article, a dislocation-free and striation-free semi-insulating GaAs crystal with 50 mm diameter was obtained by combining the following techniques; (i) dislocation free seed crystal is used to eliminate grown-in dislocations, (ii) the fully encapsulated Czochralski (FEC) method is applied in combination with indium doping to suppress stress-induced dislocation, and (iii) a vertical magnetic-field is applied to homogenize the distribution of doped indium.

TL;DR: In this paper, a comparative experimental study of thermal and thermosolutal convection is carried out by solidifying a concentrated Ge-Si binary system and a dilute Ge-Ga system in a new Bridgman furnace where radial thermal gradients have been minimized and well characterized.

TL;DR: In this article, the authors investigated the use of ultraviolet light for lowering the temperature of Organometallic Vapor Phase Epitaxial (OMVPE) CdTe growth on GaAs.

TL;DR: In this paper, the authors analyzed the thermal stress produced in a semi-infinite single crystal during the growth by temperature variations and numerically calculated the resolved shear stress for various Biot numbers and Peclet numbers.

TL;DR: In this paper, the authors give a brief review of the present understanding of the operation of these layers, and discuss important factors affecting their threshold, and summarize recent work aimed at improving the threshold requirements and discuss our work with ZnSe which in some cases yielded lowest thresholds for this compound.

TL;DR: Growth of low-resistivity and high-quality ZnSe and ZnS films by low-pressure MOCVD has been examined in this article, where it has been shown that low- resistivity Zn S films can be grown on GaAs by MCCVD.

TL;DR: The actual and theoretical morphologies of TiB 2 crystals were determined from experiments and energetical calculations respectively as mentioned in this paper, showing that some crystals present a plate-like growth limited by large (0001) faces and smaller (01-10) facets.

TL;DR: In this paper, it was concluded that thermocapillary convection is the cause for the microstriations one always finds in uncoated crystals, and it was shown that this is not the case in the case of silicon crystals.

TL;DR: In this article, an exact solution for the shape of a dendrite growing in an isothermal capillary containing a liquid mixture is found, based on an analogy with the equations describing the phenomenon of fingering in porous media.

TL;DR: In this article, the authors evaluated the thermal expansion coefficient (α) and density from the fractional change in length, thermal conductivity ( K ) and diffusivity (κ), elastic stiffness constants, and heat capacity over a wide temperature range for this compound.

TL;DR: In this article, a sequential modular computational scheme has been proposed for the calculation of temperature profiles in the melt and crystal including the melt-crystal interface shape and the crystal pulling rate for a fixed crystal radius.

TL;DR: In this paper, a few selected problems connected with electronic and magnetic properties of semimagnetic semiconductors and their applications are discussed, and the role of long range interaction and the influence of hole concentration on magnetic properties is reviewed.

TL;DR: In this article, the crystal structures of ZnSe at high temperatures up to 1440°C are directly observed by a high-temperature oscillation technique using X-ray diffraction.

TL;DR: In this article, a computer simulation model has been developed for prediction of the temperature distribution and the position of the melt-crystal interface for crystals grown by the Czochralski method.

TL;DR: In this paper, the photoionization energy of substitutional Fe in CdTe was investigated by means of photo-EPR and photoluminescence, and the experimentally determined level energy of Ec − 1.45 eV for Fe2+3+ was in good agreement with recent theoretical predictions.

TL;DR: In this article, the authors analyzed the instabilities resulting from this unusual thermal situation and showed that a stable pattern can develop provided that the spacing between the solid and liquid is small enough.