Showing papers in "Journal of Crystal Growth in 2006"

TL;DR: In this article, the effects of annealing temperature and dopant concentration on the structural and optical properties of ZnO:Al, AZO thin films have been discussed and the minimum sheet resistance of 10 4 ǫ/□ was obtained for the film doped with 1.6% Al, annealed at 750°C.

TL;DR: In this article, a detailed study of point defects in ZnO was performed using first-principles methods based on density functional theory and pseudopotentials, and it was shown that native point defects are unlikely to be the cause of the frequently observed unintentional n-type conductivity.

TL;DR: In this paper, a low-temperature hydrothermal synthesis route was utilized to fabricate single-phase BiFeO 3 (BFO) crystallites, and the effects of initial KOH concentration, reaction temperature and duration time on the phase evolution, the particle size and morphologies of BFO crystallites were systematically investigated.

TL;DR: In this paper, the authors studied the microstructure of the nanowires as a function of temperature and annealing time using scanning electron microscopy, energy dispersive X-ray analysis and selected area electron diffraction.

TL;DR: In this article, the synthesis and characterization of nanocrystalline ZnO powders by a simple method using zinc acetate dihydrate and polyvinyl pyrrolidone (PVP) as a chelating agent was reported.

TL;DR: The formation of ternary compounds within the Ti-Al-C system was studied by magnetron sputtering for thin-film deposition and first-principles calculations for phase stability as mentioned in this paper.

TL;DR: In this paper, the bond valence model was employed to calculate the bond strength of constituent chemical bonds formed between growth units in both potassium dihydrogen phosphate (KDP) and ammonium dihydric phosphate (ADP) crystals, with the aim to predict and control the crystal shape.

TL;DR: In this paper, the mild preparation of submicron Cu 2 O and CuO crystallites from a solid metallorganic molecular precursor (copper acetylacetonate, Cu-(ACAC) 2 ) has been achieved via two simple steps.

TL;DR: In this paper, X-ray diffraction patterns showed the presence of hexagonal wurtzite ZnO phase with strong c-axis orientation in all the cases and the c -axis lattice parameter was found to increase with increase in Al doping.

TL;DR: The nucleation, crystallization and transformation of vaterite at controlled pH were investigated in this article, where the control of pH was conducted by the addition of ammonia, which induced a local high supersaturation and continuous nuclei formation.

TL;DR: In this article, the authors identified crystal growth conditions in gas-source molecular beam epitaxy (MBE) that lead to spontaneous formation of GaN nanowires with high aspect ratio on Si (1 1 1) substrates.

TL;DR: In this article, the vertical alignment of the nanowire array on the substrate is attributed to the epitaxial growth of the ZnO buffer layer, and the growth mechanism was also discussed in detail.

TL;DR: In this article, a review of Ohmic and Schottky contacts to n-and p-type ZnO is given, with Ohmic contacts having resistivity in the range 10 −6 ǫ cm 2 even for unnannealed contacts on strongly n-type layers.

TL;DR: In this article, the authors conducted a comprehensive survey to organize the information of previous works and to summarize the current status of research on preferred orientation of polycrystalline ZnO films.

TL;DR: In this paper, the authors used RF plasma-assisted molecular beam epitaxy to grow ZnO epitaxial films on sapphire (0, 0,0,1) substrates and fabricated metal-semiconductor-metal sensors with Ag, Pd and Ni contact electrodes.

TL;DR: In this article, the synthesis, crystal growth and non-linear optical properties of new chalcone derivatives are reported, including 4-propyloxy and 4-butoxy benzaldehydes.

TL;DR: In this paper, the authors used the micro-pulling-down (μ-PD) method and Czochralski (Cz) method to grow Lu 3 Al 5 O 12 (LuAG) single crystals.

TL;DR: In this paper, the Czochralski method was used to grow Pr-doped Lu 3 Al 5 O 12 (Pr:LuAG) bulk single crystals in the 〈1 1 1 1/1/1'' direction.

TL;DR: It is reported that recombinant human-like type I collagen, an acidic protein, can direct growth of hydroxyapatite (HA) nanocrystals in vitro in the form of self-assembly of nano-fibrils of mineralized collagen resembling extracellular matrix.

TL;DR: A-plane GaN epilayers have been grown on r-plane sapphire by MOCVD, and investigated by scanning electron microscopy (SEM), X-ray diffraction (XRD), and atomic force microscopy.

TL;DR: In this article, a method for the growth of GaN bulk crystals under ammonothermal conditions is described, using polycrystalline GaN as nutrient and hydride vapor phase epitaxy GaN templates as seeds.

TL;DR: In this article, the formation of Si and SiGe nanowires (NW) by molecular beam epitaxy (MBE) initiated via gold droplets is reported. But the MBE growth behavior essentially differs from the classical vapor-liquid-solid mechanism (VLS) observed in the case of NW growth by chemical vapor deposition (CVD).

TL;DR: In this article, the authors measured a narrow mono-dispersed distribution with L 50 = 6.0μm for a batch at t N = 0.5μm.

TL;DR: In this article, the electrical properties of N and P-doped p-type ZnO are characterized by temperature-dependent Hall-effects and photo-Hall-effects, and a surface-layer model provides qualitative agreement with the observed behavior.

TL;DR: In this paper, the growth kinetics of the wires were investigated for substrate temperatures between 500 and 600°C, and V/III flux ratios of 1.5 and 2.3.

TL;DR: The SiH4 treatment is effective in increasing dislocation pit size on both n-and p-type material, and has also been used on partially coalesced GaN layers as discussed by the authors.

TL;DR: In this article, a template-controlled process is used for fabrication of nanopatterned ZnO nanowire arrays on epitaxial GaN substrates through a template controlled process.

TL;DR: C-axis preferred oriented ZnO thin films were prepared on quartz substrates by RF sputtering Photoconductive ultraviolet detector with planar interdigital electrodes with linear I-V characteristic was observed under dark or 365 nm UV light illumination and has obvious difference The photoresponsivity of 365 nm at 5 V bias is 18 A/W as mentioned in this paper.

TL;DR: In this article, column morphology and crystalline quality were investigated by scanning electron microscopy (SEM) and photoluminescence (PL), respectively. And the growth of InN using plasma-assisted MBE has been investigated within the parameter range of columnar growth.

TL;DR: In this paper, up to 5.4-μm thick GaN on Si light emitting diode (LED) structures were grown by metalorganic chemical vapor phase epitaxy (MOVPE) on 150mm Si(1.1) substrates.