Journal of Electronic Materials
Springer Science+Business Media
About: Journal of Electronic Materials is an academic journal published by Springer Science+Business Media. The journal publishes majorly in the area(s): Thin film & Thermoelectric effect. It has an ISSN identifier of 0361-5235. Over the lifetime, 15394 publications have been published receiving 222574 citations. The journal is also known as: IEEE/TMS journal of electronic materials & JEM.
Papers published on a yearly basis
TL;DR: In this article, it was shown that the Seebeck coefficient of a semiconductor has a maximum value that is close to one-half the energy gap divided by eT, with account taken of the mobility and effective mass ratios.
Abstract: It is shown that the magnitude of the Seebeck coefficient of a semiconductor has a maximum value that is close to one-half the energy gap divided by eT. An expression for the position of the Fermi level at which the Seebeck coefficient has a maximum or minimum value is derived, with account taken of the mobility and effective mass ratios. It is concluded that measurement of the Seebeck coefficient as a function of temperature on any novel semiconductor is one of the simplest ways of estimating its band gap.
TL;DR: In this paper, phase diagram data in the Sn-Ag-Cu system were measured and the location of the ternary eutectic involving L, (Sn), Ag3Sn and Cu6Sn5 phases was confirmed to be at a composition of 3.5 wt.% Ag, 0.91 wt% Cu at a temperature of 216.2±0.3°C.
Abstract: Sn-rich alloys in the Sn-Ag-Cu system are being studied for their potential as Pb-free solders. Thus, the location of the ternary eutectic involving L, (Sn), Ag3Sn and Cu6Sn5 phases is of critical interest. Phase diagram data in the Sn-rich corner of the Sn-Ag-Cu system are measured. The ternary eutectic is confirmed to be at a composition of 3.5 wt.% Ag, 0.9 wt.% Cu at a temperature of 217.2±0.2°C (2σ). A thermodynamic calculation of the Sn-rich part of the diagram from the three constituent binary systems and the available ternary data using the CALPHAD method is conducted. The best fit to the experimental data is 3.66 wt.% Ag and 0.91 wt.% Cu at a temperature of 216.3°C. Using the thermodynamic description to obtain the enthalpy- temperature relation, the DTA signal is simulated and used to explain the difficulty of liquidus measurements in these alloys.
TL;DR: In this paper, the authors investigated the low-temperature sintering behavior of nano Ag nanoparticles and found that the particles exhibited an obvious sinting behavior at significantly lower temperatures than the Tm (960°C) of silver.
Abstract: Low-temperature sintering behavior of Ag nanoparticles was investigated The nano Ag particles used (∼20 nm) exhibited obvious sintering behavior at significantly lower temperatures (∼150°C) than the Tm (960°C) of silver Coalescence of the nano Ag particles was observed by sintering the particles at 150°C, 200°C, and 250°C The thermal profile of the nanoparticles was examined by a differential scanning calorimeter (DSC) and a thermogravimetric analyzer (TGA) Shrinkage of the Ag-nanoparticle compacts during the sintering process was observed by thermomechanical analysis (TMA) Sintering of the nanoparticle pellet led to a significant increase in density and electrical conductivity The size of the sintered particles and the crystallite size of the particles increased with increasing sintering temperature
TL;DR: In this article, high-quality zinc oxide (ZnO) films were epitaxially grown on R-plane sapphire substrates by metalorganic chemical vapor deposition at temperatures in the range of 350°C to 600°C.
Abstract: High-quality zinc oxide (ZnO) films were epitaxially grown on R-plane sapphire substrates by metalorganic chemical vapor deposition at temperatures in the range of 350°C to 600°C. In-situ nitrogen compensation doping was performed using NH3. Microstructural and optical properties of the films, as well as the N-doping effects, were studied. The metal-semiconductor-metal ultraviolet sensitive photodetectors were fabricated on N-doped epitaxial ZnO films. The detector showed fast photoresponse, with a rise time of 1 µs and a fall time of 1.5 µs. Low-frequency photoresponsivity, on the order of 400 A/W at 5 V bias, was obtained.
TL;DR: In this paper, high values of thermoelectric figures of merit were reported for Bi-doped n-type PbSeTe/PbTe quantum-dot superlattice (QDSL) samples grown by molecular beam epitaxy (MBE).
Abstract: High values of thermoelectric figures of merit ZT, ranging from ZT=1.6 at 300 K to ZT=3 at 550 K, are reported for Bi-doped n-type PbSeTe/PbTe quantum-dot superlattice (QDSL) samples grown by molecular beam epitaxy (MBE). These ZT values were determined by directly measuring Seebeck coefficients and electrical conductivities and using the low lattice thermal conductivity value (∼3.3 mW/cm-K) determined experimentally from measurements of a one-legged thermoelectric cooler. Initial experiments have also shown that high values of ZT (∼1.1 at 300 K) are achievable for complementary Na-doped p-type PbSeTe/PbTe QDSL samples, in which the conduction and valence bands mirror those in the Bi-doped Pb chalcogenides.