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JournalISSN: 0022-4596

Journal of Solid State Chemistry 

About: Journal of Solid State Chemistry is an academic journal. The journal publishes majorly in the area(s): Crystal structure & Orthorhombic crystal system. It has an ISSN identifier of 0022-4596. Over the lifetime, 19176 publication(s) have been published receiving 470122 citation(s).
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Journal ArticleDOI
Munirpallam A. Subramanian1, Dong Li1, N. Duan2, Barbara A. Reisner3  +1 moreInstitutions (3)
Abstract: High dielectric constants have been found in oxides of the type A Cu 3 Ti 4 O 12 . The most exceptional behavior is exhibited by CaCu 3 Ti 4 O 12 , which shows a dielectric constant at 1 kHz of about 12,000 that is nearly constant from room temperature to 300°C. The cubic structure of these materials is related to that of perovskite (CaTiO 3 ), but the TiO 6 octahedra are tilted to produce a square planar environment for Cu 2+ . The CaCu 3 Ti 4 O 12 structure down to 35 K has been examined by neutron powder diffraction. The structure remains cubic and centric. Most compositions of the type A 2/3 Cu 3 Ti 4 O 12 ( A =trivalent rare earth or Bi) show dielectric constants above 1000. The dielectric properties of isostructural compounds of the type A Cu 3 Ti 3 FeO 12 are also presented.

1,691 citations


Journal ArticleDOI
Abstract: Homologous compounds, In2O3(ZnO)m (m ≥ 3), (InGaO3)2 ZnO, InGaO3(ZnO)m (m ≥ 1), and Ga2O3(ZnO)m (m ≥ 7) phases (m = natural number) in the In2O3-ZnGa2O4-ZnO system were synthesized at 1150-1550°C from In2O3, Ga2O3, and ZnO powders. The homologous compounds with smaller m are synthesized as temperature is elevated higher. Single crystals of In2O3(ZnO)m (m = 3, 4, and 5), InGaO3(ZnO)3, and Ga2O3(ZnO)m (m ≥ 7, 8, 9, and 16) were grown by means of solid-state reactions in the mixtures of the starting compound powders with mixing ratio of In2O3:ZnO = 1:m at 1550°C, In2O3:Ga2O3:ZnO = 1:1:6 at 1550°C, and Ga2O3:ZnO = 1:m (in a mole ratio) at 1450-1550°C. The crystal data determined by means of a Weissenberg camera are as follows: In2O3(ZnO)3; a = 3.34 A; and c = 42.6 A; In2O3(ZnO)4, a = 3.33 A and c = 33.5 A; In2O3(ZnO)5, a = 3.32 A and c = 58.4A; and InGaO3(ZnO)3, a = 3.29A and c = 41.8A. The crystal data determined by means of a single-crystal X-ray diffractometer are as follows: Ga2O3(ZnO)7, a = 3.2512(1) A, b = 19.654(3)A, and c = 27.754(4)A; Ga2O3(ZnO)8, a = 3.2497(1)A, b = 19.682(3)A, and c = 30.684(3)A; Ga2O3(ZnO)9, a = 3.2520(1)A, b = 19.707(4)A, and c = 33.603(5)A; and Ga2O3(ZnO)16, a = 3.2534(1)A, b = 19.764(3)A, and c = 54.208(5)A, orthorhombic crystal system in Cmcm space group (No. 63). In2O3(ZnO)m and InGaO3(ZnO)m belong to 3m for m = odd or P 63/mmc for m = even, and their lattice constants are given in a hexagonal form. The crystal data for In2O3(ZnO)m, InGaO3(ZnO)m, and Ga2O3(ZnO)m are discussed based upon the wurtzite-type crystal structure.

1,186 citations


Journal ArticleDOI
Chunfei Li, Yoshio Bando, Masaki Nakamura, Mitsuko Onoda  +1 moreInstitutions (1)
Abstract: The modulated structures appearing in the homologous compounds InMO3(ZnO)m(M=In, Ga;m=integer) were observed by using a high-resoultion transmission electron microscope and are described based on a four-dimensional superspace group. The electron diffraction patterns for compounds withmlarger than 6 reveal extra spots, indicating the formation of a modulated structure. The subcell structures form=odd and even numbers are assigned to be either monoclinic or orthorhombic, respectively. On the other hand, extra spots can be indexed by one-dimensional modulated structure. The possible space groups for the subcell structure areCm,C2, andC2/mform=odd numbers, while those form=even numbers areCcm21andCcmm, respectively. Then, corresponding possible superspace groups are assigned to bePC2s,PCm 1 , andPC2/ms 1 for oddmnumbers andPCcm211 1 1 andPCcmm1 1 1for evenmnumbers. Based on the superspace group determination, a structure model for a one-dimensional modulated structure is proposed.

1,108 citations


Journal ArticleDOI
Abstract: In the Sc 2 O 3 Ga 2 O 3 CuO, Sc 2 O 3 Ga 2 O 3 ZnO, and Sc 2 O 3 Al 2 O 3 CuO systems, ScGaCuO 4 , ScGaZnO 4 , and ScAlCuO 4 with the YbFe 2 O 4 -type structure and Sc 2 Ga 2 CuO 7 with the Yb 2 Fe 3 O 7 -type structure were obtained. In the In 2 O 3  A 2 O 3  B O systems ( A : Fe, Ga, or Al; B : Mg, Mn, Fe, Ni, or Zn), InGaFeO 4 , InGaNiO 4 , and InFe 3+ MgO 4 with the spinel structure, InGaZnO 4 , InGaMgO 4 , and InAlCuO 4 with the YbFe 2 O 4 -type structure, and In 2 Ga 2 MnO 7 and In 2 Ga 2 ZnO 7 with the Yb 2 Fe 3 O 7 -type structure were obtained. InGaMnO 4 and InFe 2 O 4 had both the YbFe 2 O 4 -type and spinel-type structures. The revised classification for the crystal structures of AB 2 O 4 compounds is presented, based upon the coordination numbers of constituent A and B cations.

1,024 citations


Journal ArticleDOI
John B. Goodenough1Institutions (1)
Abstract: Two distinguishable mechanisms of the monoclinic-to-tetragonal transition in VO 2 are identified: an antiferroelectric-to-paraelectric transition at a temperature T t as well as a change from homopolar to metallic VV bonding at a temperature T t ′. In pure VO 2 at atmospheric pressure, the two transitions occur at the same temperature, T t ′ = T t = 340°K. However, a T t ′ T t may be induced by atomic substitutions; and in the intermediate temperature range the structure is orthorhombic, the antiferroelectric distortions being somewhat different in the absence of homopolar VV bonding. From energy-band considerations, the semiconductor-to-metal transition is to be associated with the transition at T t ; but below T t ′ the semiconducting energy gap should be larger and the charge-carrier mobilities should be smaller. The existence of two transition temperatures in doped VO 2 is distinguished from the claim of two transition temperatures in the Magneli phases V n O 2 n −1 . In this latter case, the appearance of two transitions reflects a two-phase region consisting of two adjoining Magneli phases.

1,020 citations


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Metrics
No. of papers from the Journal in previous years
YearPapers
202283
2021798
2020610
2019631
2018419
2017403