Journal of The Optical Society of America B-optical Physics
Optica Publishing Group
About: Journal of The Optical Society of America B-optical Physics is an academic journal. The journal publishes majorly in the area(s): Laser & Nonlinear optics. It has an ISSN identifier of 0740-3224. Over the lifetime, 13521 publications have been published receiving 331160 citations.
Papers published on a yearly basis
TL;DR: In this paper, the two-photon fluorescence excitation (TPE) spectra were measured for 11 common molecular fluorophores in the excitation wavelength range 690 nm < λ < 1050 nm.
Abstract: Measurements of two-photon fluorescence excitation (TPE) spectra are presented for 11 common molecular fluorophores in the excitation wavelength range 690 nm < λ < 1050 nm. Results of excitation by ∼100-fs pulses of a mode-locked Ti:sapphire laser are corroborated by single-mode cw Ti:sapphire excitation data in the range 710 nm < λ < 840 nm. Absolute values of the TPE cross section for Rhodamine B and Fluorescein are obtained by comparison with one-photon-excited fluorescence, assuming equal emission quantum efficiencies. TPE action cross sections for the other nine fluorophores are also determined. No differences between one-photon- and two-photon-excited fluorescence emission spectra are found. TPE emission spectra are independent of excitation wavelength. With both pulsed and cw excitation the fluorescence emission intensities are strictly proportional to the square of the excitation intensity to within ±4% for excitation intensities sufficiently below excited-state saturation.
TL;DR: In this paper, the authors measured the far-infrared absorption and dispersion from 0.2 to 2 THz of the crystalline dielectrics sapphire and quartz, fused silica, and the semiconductors silicon, gallium arsenide, and germanium.
Abstract: Using the method of time-domain spectroscopy, we measure the far-infrared absorption and dispersion from 0.2 to 2 THz of the crystalline dielectrics sapphire and quartz, fused silica, and the semiconductors silicon, gallium arsenide, and germanium. For sapphire and quartz, the measured absorptions are consistent with the earlier work below 0.5 THz. Above 1 THz we measure significantly more absorption for sapphire, while for quartz our values are in reasonable agreement with those of the previous work. Our results on high-purity fused silica are consistent with those on the most transparent fused silica measured to date. For the semiconductors, we show that many of the previous measurements on silicon were dominated by the effects of carriers due to impurities. For high-resistivity, 10-kΩ cm silicon, we measure a remarkable transparency together with an exceptionally nondispersive index of refraction. For GaAs our measurements extend the precision of the previous work, and we resolve two weak absorption features at 0.4 and 0.7 THz. Our measurements on germanium demonstrate the dominant role of intrinsic carriers; the measured absorption and dispersion are well fitted by the simple Drude theory.
TL;DR: This paper reviews the current state of the art in terms of continuous-wave and pulsed performance of ytterbium-doped fiber lasers, the current fiber gain medium of choice, and by far the most developed in Terms of high-power performance.
Abstract: The rise in output power from rare-earth-doped fiber sources over the past decade, via the use of cladding-pumped fiber architectures, has been dramatic, leading to a range of fiber-based devices with outstanding performance in terms of output power, beam quality, overall efficiency, and flexibility with regard to operating wavelength and radiation format. This success in the high-power arena is largely due to the fiber’s geometry, which provides considerable resilience to the effects of heat generation in the core, and facilitates efficient conversion from relatively low-brightness diode pump radiation to high-brightness laser output. In this paper we review the current state of the art in terms of continuous-wave and pulsed performance of ytterbium-doped fiber lasers, the current fiber gain medium of choice, and by far the most developed in terms of high-power performance. We then review the current status and challenges of extending the technology to other rare-earth dopants and associated wavelengths of operation. Throughout we identify the key factors currently limiting fiber laser performance in different operating regimes—in particular thermal management, optical nonlinearity, and damage. Finally, we speculate as to the likely developments in pump laser technology, fiber design and fabrication, architectural approaches, and functionality that lie ahead in the coming decade and the implications they have on fiber laser performance and industrial/scientific adoption.
TL;DR: LiB3O5 as mentioned in this paper is a new nonlinear-optical crystal with a high damage threshold of 25 GW/cm2 (at 1.064 μm, 0.1 nsec) and a wide acceptance angle of 25 mrad for θ ≠ 90°.
Abstract: The boron–oxygen compound LiB3O5 is recognized as a new nonlinear-optical crystal. This follows theoretical calculations of the second-harmonic generation (SHG) coefficients using the anionic group theory and the complete neglect of differential overlap approximation to obtain the localized wave functions of component groups. An optically perfect single crystal with space group Pna21, grown at the Fujian Institute of Research on the Structure of Matter by the high-temperature flux method, is found to be transparent from 160 nm to 2.6 μm. It has a SHG coefficient comparable with that of β-BaB2O4 as well as two other outstanding advantages: a high damage threshold of 25 GW/cm2 (at 1.064 μm, 0.1 nsec) and a wide acceptance angle of 25 mrad for θ ≠ 90° and 95 mrad for θ = 90° with a 6-mm-long crystal.
TL;DR: In this article, the photonic band gap structures, those three-dimensional periodic dielectric structures that are to photon waves as semiconductor crystals are to electron waves, are discussed.
Abstract: The analogy between electromagnetic wave propagation in multidimensionally periodic structures and electron-wave propagation in real crystals has proven to be a fruitful one. Initial efforts were motivated by the prospect of a photonic band gap. a frequency band in three-dimensional dielectric structures in which electromagnetic waves are forbidden irrespective of the propagation direction in space. Today many new ideas and applications are being pursued in two and three dimensions and in metallic, dielectric, and acoustic structures. We review the early motivations for this research, which were derived from the need for a photonic band gap in quantum optics. This need led to a series of experimental and theoretical searches for the elusive photonic band-gap structures, those three-dimensionally periodic dielectric structures that are to photon waves as semiconductor crystals are to electron waves. We describe how the photonic semiconductor can be doped, producing tiny electromagnetic cavities. Finally, we summarize some of the anticipated implications of photonic band structure for quantum electronics and for other areas of physics and electrical engineering.