Journal of Vacuum Science & Technology B
About: Journal of Vacuum Science & Technology B is an academic journal. The journal publishes majorly in the area(s): Molecular beam epitaxy & Resist. Over the lifetime, 15332 publication(s) have been published receiving 304030 citation(s).
Papers published on a yearly basis
Abstract: The status of research on both wurtzite and zinc‐blende GaN, AlN, and InN and their alloys is reviewed including exciting recent results. Attention is paid to the crystal growth techniques, structural, optical, and electrical properties of GaN, AlN, InN, and their alloys. The various theoretical results for each material are summarized. We also describe the performance of several device structures which have been demonstrated in these materials. Near‐term goals and critical areas in need of further research in the III–V nitride material system are identified.
Abstract: Wide-band-gap oxides such as SrTiO3 are shown to be critical tests of theories of Schottky barrier heights based on metal-induced gap states and charge neutrality levels. This theory is reviewed and used to calculate the Schottky barrier heights and band offsets for many important high dielectric constant oxides on Pt and Si. Good agreement with experiment is found for barrier heights. The band offsets for electrons on Si are found to be small for many key oxides such as SrTiO3 and Ta2O5 which limit their utility as gate oxides in future silicon field effect transistors. The calculations are extended to screen other proposed oxides such as BaZrO3. ZrO2, HfO2, La2O3, Y2O3, HfSiO4, and ZrSiO4. Predictions are also given for barrier heights of the ferroelectric oxides Pb1−xZrxTiO3 and SrBi2Ta2O9 which are used in nonvolatile memories.
Abstract: Using an atomic force microscope, we measured effective spring constants of stacks of graphene sheets (less than 5) suspended over photolithographically defined trenches in silicon dioxide. Measurements were made on layered graphene sheets of thicknesses between 2 and 8nm, with measured spring constants scaling as expected with the dimensions of the suspended section, ranging from 1to5N∕m. When our data are fitted to a model for doubly clamped beams under tension, we extract a Young’s modulus of 0.5TPa, compared to 1TPa for bulk graphite along the basal plane, and tensions on the order of 10−7N.
Abstract: To study the effects of plasma chemistries on etch characteristics and plasma-induced damage to the optical properties, dry etching of ZnO films has been carried out using inductively coupled plasmas of Cl2/Ar, Cl2/H2/Ar, and CH4/H2/Ar. The CH4/H2/Ar chemistry showed a faster etch rate and a better surface morphology than the Cl2-based chemistries. Etched samples in all chemistries showed a substantial decrease in the PL intensity of band-edge luminescence mainly due to the plasma-induced damage. The CH4/H2/Ar chemistry showed the least degradation of the optical properties.
TL;DR: A new lithography paradigm that is based on deformation of a resist by compression molding rather than altering its chemical structure by radiation, and is designed to fabricate nanostructures inexpensively with high throughput is presented.
Abstract: New developments, further details, and applications of imprint lithography are presented. Arrays of 10 nm diameter and 40 nm period holes were imprinted not only in polymethylmethacrylate (PMMA) on silicon, but also in PMMA on gold substrates. The smallest hole diameter imprinted in PMMA is 6 nm. All the PMMA patterns were transferred to a metal using a liftoff. In addition, PMMA mesa’s of a size from 45 nm to 50 μm were obtained in a single imprint. Moreover, imprint lithography was used to fabricate the silicon quantum dot, wire, and ring transistors, which showed the same behavior as those fabricated using electron (e)-beam lithography. Finally, imprint lithography was used to fabricate nanocompact disks with 10 nm features and 400 Gbits/in.2 data density—near three orders of magnitude higher than current critical dimensions (CDs). A silicon scanning probe was used to read back the data successfully. The study of wear indicates that due to the ultrasmall force in tapping mode, both the nano-CD and the ...