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Showing papers in "Langmuir in 1984"


Journal ArticleDOI
01 Jul 1984-Langmuir
TL;DR: In this paper, both one-dimensional and three-dimensional models are presented for the collision of a vibrationally-excited molecule with a semiconductor surface, where the transfer of vibrational energy leads to the formation of electron-hole pairs.
Abstract: : Both one-dimensional and three-dimensional models are presented for the collision of a vibrationally-excited molecule with a semiconductor surface, where the transfer of vibrational energy leads to the formation of electron-hole pairs The transition probability P is calculated as a function of the molecule-surface distance for real two systems, HC1 + InSb and HC1 + PbSe, as well as for some model systems with different values of parameters While P generally increases as the distance decreases, there are some minima at intermediate distances The overall probability is obtained as an approximate integral of P over the distance, and for thermal collisions values of a few percent are obtained Such values are high enough for an experimental observation of electrical conductivity due to electron-hole pair formation (Author)

2 citations