Showing papers in "Materials Letters in 1982"

TL;DR: In this paper, a lineage structure of subgrain boundaries arising via cellular growth at the trailing edge of the molten zone has been demonstrated for dielectrically isolated single crystals of large extent.

TL;DR: In this article, a novel system was designed and constructed for recrystallization of polysilicon films, which utilizes tungsten light sources to heat, zone melt, and subsequently crystallize poly silicon films on insulating substrates.

TL;DR: The cleavage of single-crystal GaP was studied by measuring the fracture toughness on the (100), (110), and (111) planes in this article, and it was observed that (110) is the preferred cleavage plane with a fracture toughness of only 0.65 ± 0.03 MPa m 1 2 and a fracture surface energy of 1.46 ± 1.07 J/m2.

TL;DR: In this article, the authors found that the formation per metal atom of the transition-metal silicides increase with the increasing silicon content in the intermetallics, which explains the observed higher stability of the silicon-rich silicides.

TL;DR: In this article, structural information and compound formation rate were obtained by X-ray diffraction, which indicated single compound formation in thin-film diffusion couples and the prediction of the first compound phase to grow in a diffusion couple was discussed.

TL;DR: In this article, a method based on ever occurring thermal emission in samples under stress is presented to identify the true macroscopic flow stress or point of physical yielding in 38NCD4 steel.

TL;DR: Pulsed laser annealing was carried out for n-type semiconducting GaAs in air, 1 bar nitrogen and 1 bar argon gas ambiences, and high electrical activity (100%) and electron mobilities were achieved for high-dose implants of Si + (1 × 10 15 cm −2 ) as discussed by the authors.

TL;DR: In this article, magnetic susceptibility and proton NMR were used to examine the properties of the hexagonal and cubic allotropes of the TiCr 1.8 -hydrogen system.

TL;DR: In this article, a low luminescence efficiency ring, concentric with the circular electrical contact, has been observed on p-InP and pInGaAsP epitaxial layers using cathodoluminescence imaging.

TL;DR: In this article, the double chlorides Li 2 MgCl 4 and LiMgCl 3 both have spinel-type structure and the former one is stoichiometric, the latter, obtained by high-temperature quenching is cation deficient.

TL;DR: In this paper, the resistivities of III-VI semiconductors Ga 2 Te 3 and In 2Te 3 were found to decrease abruptly under hydrostatic pressures between 1 and 7 GPa.

TL;DR: In this article, zinc reduction of silicon tetrachloride at a low temperature (≈550° C) in a vertical vapour phase reactor was used to produce polycrystalline silicon ingots with an average grain size of 0.5 μm having a room-temperature resistivity in the range 1.0-1.5 Ω cm suitable for solar cell fabrication.

TL;DR: In this paper, a geometric model based on criteria of a minimum hole size for occupation by H(D) and a minimum distance between pairs of atoms has been applied to V 2 H (D), which allows a rationalization for the observed occupation of octahedral o Z 1 sites in the stoichiometric compound and for randomization in all o Z sites in hyperstoichiometric V 2H.

TL;DR: In this paper, the authors proposed a method to reduce copper, cobalt, nickel, bismuth, silver, palladium and osmium to metal powder below 250°C in formic acid medium.

TL;DR: In this paper, the discovery of superconductivity in LaNi2Ge2 (Tc = 0.69 K), isostructural to several new superconductors we have previously reported.

TL;DR: In this article, the CdTe/HgTe system is reviewed in the light of current interest in layer fabrication for infrared detectors, and the implications of these studies on diffusion mechanisms are discussed, together with suggestions for further work.

TL;DR: In this paper, the dependence of the step coverage of chemically vapor deposited undoped SiO 2 glass films on the deposition pressure is reported. And it has been found that step coverage is significantly improved when the depositionpressure is increased by reducing the pumping speed.

TL;DR: In this paper, it was shown that flux-pinning by Nb3Sn-Cu interfaces in in-situ superconducting composites can lead to a pinning function of the form F p ∝ b 1 2 (1 − b) 2, as is found experimentally.

TL;DR: In this article, a large glass-forming region at 1000°C has been identified in the ternary diagram Li 2 O-CdO-P 2 O 5, where the thermal stability of the glasses seems to be enhanced by the introduction of Cd 2+ cations.

TL;DR: In this paper, a domain of 12R-structure is obtained for 0.75Cd0.50F3, where Ni2+ cations are located in octahedra sharing faces and forming linear trimers.

TL;DR: In this paper, a list of powders prepared by this method was given, including some metallic glass powders such as CuTi, which were difficult to remove hydrogen for them, indicating strongly bound hydrogen in them.

TL;DR: In this paper, a large single crystal which possesses the lowest hole concentrations yet reported, 3 × 1014 cm−3, have been grown by the liquid encapsulated Czochralski pulling technique.

TL;DR: In this paper, a double meltback procedure is proposed for large-area substrates, which retains the advantages of conventional meltback and maintains flat surface morphology (to within ≈ 0.02 μm).

TL;DR: In this article, the effect of process variables like temperature and pack composition on the phase formation at the surface of mild steel was studied and the preferred orientation of the Fe 2 B layer was observed on the steel surface to a thickness of ≈ 100 μm.

TL;DR: In this article, electrical properties of a phase of composition close to Zn 0.99 Co 0.01 O have been studied on pellets sintered at 1300°C under a pure oxygen stream for various periods of time.

TL;DR: In this paper, the authors describe the design and required growth parameters of GaAs planar doped barriers formed by MBE, which can be used to construct very high-frequency devices, including mixer diodes, photodetectors, switches and hot electron transistors.

TL;DR: In this article, the liquid encapsulated Czochralski method was used to grow InP doped with compensating sulfur (donor) and zinc (acceptor) impurities.

TL;DR: In this article, a theoretical model is presented which rationalizes this energy reduction based on the formation of sessile dislocations which exert a net force on the precursor crack.

TL;DR: In this article, the authors used the CO desorption spectrum subsequent to oxygen exposure of an initially clean nickel surface exhibits three principal peaks denoted as α, β 1, and β 2.