Showing papers in "Microelectronics Journal in 1995"
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TL;DR: It is proposed that ΣΔ be seen as a complementary domain for signal processing in parallel with continuous-time (CT), sampled-data (SD) and digital (D), and the interface blocks are introduced.
37 citations
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TL;DR: In this paper, the quasi-static approximation to model the reaction kinetics of electrons, holes, and impurities in semiconductor devices is critically re-examined, and it is shown that in the case of high trap concentrations, hot carriers, low temperature operating conditions or wide gap devices the commonly used balance equations for particle and energy flow must be supplemented by additional terms in order to correctly include the emission and capture kinetics.
28 citations
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TL;DR: In this article, a pseudoperiodic square lattice is manifested for the InAs-GaAs(100) system, where less ordered dots are formed on the GaAs-100 surface with a 4 monolayer GaSb deposition.
20 citations
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TL;DR: The ECR CVD of silicon dioxide has been shown to provide high quality SiO 2 dielectric in a single wafer process that fills gaps 0.3 μm and smaller at aspect ratios 3:1 and greater on 200 mm wafers as mentioned in this paper.
19 citations
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TL;DR: Si-doped (111)A, (211)A and (311)A GaAs samples grown by molecular beam epitaxy (MBE) at different As over-pressures have been studied.
16 citations
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TL;DR: Supervised learning in multilayer feedforward neural networks using the so-called back-propagation algorithm is used to demonstrate the method and an example of the design of an operational transconductance amplifier using this method is presented.
16 citations
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TL;DR: The general requirements and architectural issues of the data level, the user interface and the task level environment are discussed, and their implementation in VISTA, the Viennese Integrated System for Technology CAD Applications is presented.
15 citations
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TL;DR: In this paper, the authors presented the first time the use of two-dimensional (2D) device simulation for optimising design parameters of high-efficiency silicon solar cells of practical dimensions.
14 citations
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TL;DR: In this paper, the authors describe the properties of pseudomorphically strained InGaAs/GaAs quantum wells grown on B oriented GaAs substrates, which can be exploited in such devices as electro-optic modulators with increased sensitivity, blue-shifting self electrooptic effect devices with enhanced contrast, all-optical symmetric SEEDs (SSEEDs) and pseudomorphic high electron mobility transistors (HEMTs) with increased two-dimensional electron gas densities.
14 citations
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TL;DR: In this article, the authors have demonstrated the performance of low-temperature silicon epitaxy by low-kinetic-energy Ar ion bombardment and achieved high-performance fabrication of advanced subhalf-micron and subquarter-micRON ULSI devices.
13 citations
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TL;DR: In this paper, the influence of ammonium fluoride (NH 4 F) on the etch rates of silicon nitride films deposited by the mercury-sensitized photochemical vapour deposition method was studied.
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TL;DR: The software structure of STORM is described, followed by a discussion of the physical models developed, and some application examples are given.
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TL;DR: The integrated TCAD system in use at AT&T is described, which provides rapid technology characterization, including the examination of process extremes, before fabrication, and reduces the technology design interval.
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TL;DR: In this article, the evolution of the surface profile at the corner between two quasi-111-A planes was evaluated using cross-sectional transmission electron microscopy, which provided the basis for the self-ordering of periodic, vertically stacked arrays of quantum wires with virtually identical shape, size and composition.
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TL;DR: Results are reported of the use of genetic algorithms for the variable ordering problem in Reed-Muller binary decision diagrams and show significant reduction in the number of nodes and gates for multi-level designs.
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TL;DR: In this paper, the intrinsic stress of the thin films used as gate material as well as thermal stress are taken into account to predict precise stress distribution, which is very important to take into account.
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TL;DR: In this article, a growth-rate model based on chemical kinetics for vapour phase epitaxy (VPE) of silicon by decomposition of SiCl 4 in a horizontal rectangular reactor at atmospheric pressure was developed.
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TL;DR: In this article, a review of the model hierarchy for the description of current flow in a semiconductor device is briefly reviewed and the strengths and restrictions of each model are critically examined.
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TL;DR: In this paper, the growth and characterization details of lattice matched and coherently strained In x Ga 1−x As/InP quantum well structures grown on misoriented InP substrates are reported.
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TL;DR: Theoretically, InP solar cells have one of the highest solar energy conversion efficiencies of any semiconductor material as mentioned in this paper, and therefore, they are a very attractive space power source and have been seriously developed as such.
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TL;DR: In this article, the electrical characteristics of epitaxial high-low junction n + −n−p + silicon diodes were investigated in the temperature range 27 −310°C.
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TL;DR: Fuzzy logic is increasingly being incorporated in systems to provide robust and effective control in a wide range of applications as discussed by the authors, which enables general principles and expert knowledge to be used to provide control rules and procedures.
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TL;DR: In this article, the proportionality coefficients between the in-plane strain and the shift in the TO and LO phonon frequencies have been calculated from the elastic constants and phonon deformation potentials.
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TL;DR: In this paper, the authors investigated the application of rare-earth elements in the liquid phase epitaxy technology of InP, InGaAsP and devices based on these semiconductor compounds.
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TL;DR: This paper presents a review of the research carried out over the past three decades in the area of self-clocked asynchronous sequential circuits, and provides an extensive list of the published materials.
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TL;DR: The types of restrictors, as encountered in industrial circuits are described; the required modifications to ATPG algorithms for stuck-at faults in circuits are shown; the results of experiments determining the consequences for the ATPG time and fault coverage are given.
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TL;DR: In this article, an algorithm based on a physical model is presented to optimise the parameters of the interconnect and the dielectric in a microelectronic circuit as dimensions are scaled into the submicrometre regime.
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TL;DR: The MASTER Framework has a two level architecture that adds capabilities for large-scale simulation-based design and experimentation and provides a high quality utility based framework that supports highly interactive use.
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TL;DR: In this paper, the origin, sign, bisotropic nature, value, homogeneity and relaxation of the built-in strain have been studied by Raman spectroscopy, using selection rules and line shape analysis over a wide temperature range.