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JournalISSN: 0026-2714

Microelectronics Reliability 

About: Microelectronics Reliability is an academic journal. The journal publishes majorly in the area(s): Reliability (statistics) & Reliability (semiconductor). It has an ISSN identifier of 0026-2714. Over the lifetime, 11383 publication(s) have been published receiving 134484 citation(s).
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Journal ArticleDOI
Mauro Ciappa1Institutions (1)
TL;DR: This compendium provides the main failure modes, the physical or chemical processes that lead to the failure, and reports some major technological countermeasures, which are used for realizing the very stringent reliability requirements imposed in particular by the electrical traction applications.
Abstract: This paper reviews the main failure mechanisms occurring in modern power modules paying special attention to insulated gate bipolar transistor devices for high-power applications. This compendium provides the main failure modes, the physical or chemical processes that lead to the failure, and reports some major technological countermeasures, which are used for realizing the very stringent reliability requirements imposed in particular by the electrical traction applications.

739 citations


Journal ArticleDOI
TL;DR: Several of the extraction methods currently used to determine the value of threshold voltage from the measured drain current versus gate voltage transfer characteristics, focusing specially on single-crystal bulk MOSFETs are reviewed.
Abstract: The threshold voltage value, which is the most important electrical parameter in modeling MOSFETs, can be extracted from either measured drain current or capacitance characteristics, using a single or more transistors. Practical circuits based on some of the most common methods are available to automatically and quickly measure the threshold voltage. This article reviews and assesses several of the extraction methods currently used to determine the value of threshold voltage from the measured drain current versus gate voltage transfer characteristics. The assessment focuses specially on single-crystal bulk MOSFETs. It includes 11 different methods that use the transfer characteristics measured under linear regime operation conditions. Additionally two methods for threshold voltage extraction under saturation conditions and one specifically suitable for non-crystalline thin film MOSFETs are also included. Practical implementation of the several methods presented is illustrated and their performances are compared under the same challenging conditions: the measured characteristics of an enhancement-mode n-channel single-crystal silicon bulk MOSFET with state-of-the-art short-channel length, and an experimental n-channel a-Si:H thin film MOSFET. 2002 Elsevier Science Ltd. All rights reserved.

728 citations


Journal ArticleDOI
Muhammad A. Alam1, Souvik Mahapatra2Institutions (2)
TL;DR: A comprehensive model for NBTI phenomena within the framework of the standard reaction–diffusion model is constructed and it is demonstrated how to solve the reaction-diffusion equations in a way that emphasizes the physical aspects of the degradation process and allows easy generalization of the existing work.
Abstract: Negative bias temperature instability has become an important reliability concern for ultra-scaled Silicon IC technology with significant implications for both analog and digital circuit design. In this paper, we construct a comprehensive model for NBTI phenomena within the framework of the standard reaction–diffusion model. We demonstrate how to solve the reaction–diffusion equations in a way that emphasizes the physical aspects of the degradation process and allows easy generalization of the existing work. We also augment this basic reaction–diffusion model by including the temperature and field-dependence of the NBTI phenomena so that reliability projections can be made under arbitrary circuit operating conditions.

679 citations


Journal ArticleDOI
TL;DR: This paper provides the groundwork for an understanding of the reliability issues of LEDs across the supply chain and identifies the relationships between failure causes and their associated mechanisms, issues in thermal standardization, and critical areas of investigation and development in LED technology and reliability.
Abstract: The increasing demand for light emitting diodes (LEDs) has been driven by a number of application categories, including display backlighting, communications, medical services, signage, and general illumination. The construction of LEDs is somewhat similar to microelectronics, but there are functional requirements, materials, and interfaces in LEDs that make their failure modes and mechanisms unique. This paper presents a comprehensive review for industry and academic research on LED failure mechanisms and reliability to help LED developers and end-product manufacturers focus resources in an effective manner. The focus is on the reliability of LEDs at the die and package levels. The reliability information provided by the LED manufacturers is not at a mature enough stage to be useful to most consumers and end-product manufacturers. This paper provides the groundwork for an understanding of the reliability issues of LEDs across the supply chain. We provide an introduction to LEDs and present the key industries that use LEDs and LED applications. The construction details and fabrication steps of LEDs as they relate to failure mechanisms and reliability are discussed next. We then categorize LED failures into thirteen different groups related to semiconductor, interconnect, and package reliability issues. We then identify the relationships between failure causes and their associated mechanisms, issues in thermal standardization, and critical areas of investigation and development in LED technology and reliability.

562 citations


Journal ArticleDOI
Roy Billinton1, Hua Chen2, R. Ghajar3Institutions (3)
Abstract: An essential step in the reliability evaluation of a power system containing Wind Energy Conversion Systems (WECS) using sequential Monte Carlo analysis is to simulate the hourly wind speed. This paper presents two different time-series models generated using different available wind data. Wind data from Environment Canada and SaskPower are used to illustrate these models. No assumptions or previously estimated factors are included in the models. In order to check the adequacy of the proposed models, the F-criterion and Q-test are used, and the statistical characteristics of the simulated wind speeds are compared with those obtained from the actual wind speeds. The proposed wind models satisfy the basic statistical tests and preserve the high-order auto-correlation, seasonal property and diurnal distributions of the actual wind speed.

462 citations


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Performance
Metrics
No. of papers from the Journal in previous years
YearPapers
202214
2021339
2020344
2019314
2018497
2017435