Showing papers in "Microelectronics Reliability in 1971"

TL;DR: In this article, a study on the generation of crystallographic defects during FET processing and the influence of such defects on device parameters is reported, where diagnostic X-ray charts are used to pinpoint the critical processing steps and the corresponding defects that influence device properties.

TL;DR: In this paper, the applications of stroboscopic scanning electron microscopy to the observation and testing of L.I.M. and hybrid arrays of operating digital micro-circuits are discussed.

TL;DR: In this paper, a review of the physical basis of loss of yield and failure of integrated circuits containing MOS devices is presented, and the causes of variations in both threshold voltage and other parameters are described.

TL;DR: In this article, the effect of aging on the adhesion strength of thin-film microelectronics is evaluated using various tests, such as ribbon peel, pull, shear and tensile.

TL;DR: In this paper, an 80 million device-hours experiment conducted on transistors having various technologies was made in “operating” as well as temperature storage conditions and performed as usual derated, accelerated and step-stress tests, for the exact determination of temperature and voltage dependence of failure rate.

TL;DR: The stochastic behaviour of an intermittently working system with three types of components has been investigated incorporating the concept of reduced-efficiency and stand- by redundancy and a numerical example has been added to illustrate the maximum number of components required for optimum reliability in stand-by redundancy.

TL;DR: In this article, the results of tests performed under field conditions and compares these results against one type of laboratory test are compared and the data reveals that the laboratory test results are not always indicative of field performance.

TL;DR: In this paper, a method is described where transistors are tested in a c.b. switching circuit with a fixed 50 Hz repetition rate and exactly adjustable amount of switching-on-and-off transient energies, allowing large batches to be tested economically.

TL;DR: In this paper, a complex system comprised of three classes of components has been investigated, incorporating the concept of stand-by redundancy, and different repair priorities have been assigned to different components depending upon the essentiality of the component in the systems' operation.

TL;DR: In this paper, an analytical study of an electronic system having two classes of components has been carried out and the principal results of this study are the Laplace transforms of the probabilities that the system is operating under normal efficiency, reduced efficiency, waiting to repair, and under repair.

TL;DR: In this article, a quantitative test of McWhorter's model is described, based on measurements of the equivalent noise voltage and trapping efficiency of surface states, and it is shown that McWhorters mechanism is probably dominant over a large range of gate voltages for some MOSTs and up to a few volts above threshold for others.

TL;DR: In this paper, the reliability was found to be 0·10×10 −6 failures per hour for values under 1 Mω or 0·9×10−6 failures for values above 1Mω.

TL;DR: In this paper, a new method was used which employs the slow charging of a measuring capacitor to evaluate the purity of MIS (metal insulator-semiconductor) structure dielectric films.

TL;DR: This paper presents a meta-analysis of the Monte Carlo simulation technique used in traffic studies, spares provisioning and system reliability studies to solve problems that would be either too costly or too time-consuming by the usual analytical methods.

TL;DR: In this article, an array of light-sensitive resistors is made on the substrate glass prior to the evaporation of the CdS layer, and the change of dark current has been recorded during this process.

TL;DR: In this article, the authors define the MTBF parameters and derive a method of statistical analysis to determine MTBF values for a complete system from component data, based on which they derive a complete MTBF value for each component.

TL;DR: In this paper, an integrated matching gate (IMG) is proposed to eliminate line reflections between high-speed integrated digital gates and their effects on reducing the noise immunity, by integrating only one resistor at the gates' input.

TL;DR: In this paper, the possibility of using a uniform distributed RC (URC) network as a microelectronic delay line is investigated and it is shown that this response can be improved by using a compensating network.

TL;DR: In this paper, the authors stress the need for consideration to be given to noise properties, and a method of noise analysis is developed which is convenient to incorporate in normal active filter designs.

TL;DR: In this article, a particular configuration for a given problem based on MTBF alone is adopted, and an attempt is made to show that the particular configuration chosen best suits the desired reliability function.