Showing papers in "Microelectronics Reliability in 1980"

TL;DR: In this article, a flat panel display with a matrix array of MOSFETs is constructed by laser annealing at an intensity sufficient to cause recrystallization of the polysilicon material.

TL;DR: In this paper, a gettering method for processing semiconductor wafers was proposed, in which a semiconductor is first annealed in a nonoxidizing atmosphere, for example, in a nitrogen atmosphere, at a temperature in the range of 950° to 1,300° C, preferably at 1,050° C.

TL;DR: This review article presents a brief introduction and an up-to-date list of selective bibliography on human reliability.

TL;DR: In this article, two gaps are placed in the reflowed phosphorus-doped silicon dioxide material overcoating of a planar high voltage semiconductor device to prevent polarization of the refloowed silox.

TL;DR: In this paper, a method of forming an electrode on the surface of a semiconductor substrate is described, which comprises the steps of (a) depositing an insulation layer provided with at least one opening for contact between the electrode and the substrate, (b) coating a plurality of spacer layers made of insulation material on the exterior of the insulation layer, including the contact opening, and (c) selectively depositing a photoresist layer on the uppermost spacer layer, which was designed to be etched at a lower rate than the immediately underlying spacer surface.

TL;DR: In this paper, an integrated circuit incorporating high voltage semiconductor devices which are controlled by low voltage devices is disclosed, including a method for making the same, with only one simple extra step in the fabrication process as compared with the process used to fabricate discrete high voltage power transistors.

TL;DR: In this paper, an automatic semi-batch sheet treatment of wafers such as high-purity silicon semiconductor wafer by plasma reaction is described, which consists of a wafer carrying mechanism, a reaction chamber with an opening at the bottom and a subtable for mounting the wafer, and control devices for driving the above elements in linkage motion.

TL;DR: In this paper, an apparatus is provided for registering a pattern on a mask plate with a pattern already formed on a semiconductor wafer, and a reflector group is provided on the wafer comprising a plurality of reflectors having a predetermined shape, interval and alignment.

TL;DR: In this article, the disclosure disclosure process is used to form polysilicon resistors by initially doping the poly-silicon to a low level of conductivity, and then a resistor mask of either silicon nitride or polyicon is formed over the resistors to protect them during the high conductivity doping of the conductors.

TL;DR: A semiconductor device has a plurality of field effect transistors on an insulating substrate as mentioned in this paper, and a semiconductor film constituting at least one of the plurality of transistors is thinner than the other field effect transistor or transistors.

TL;DR: In this article, the authors examined the temperature dependence of failure rate of electronic components in actual usage and found that the dependence was much smaller than expected from the published values of activation energy of component failure mechanisms, or assumed in some commonly used rules-of-thumb.

TL;DR: In this paper, the corrosion performance of both unencapsulated and plastic encapsulated parts has been studied under temperature-humidity bias (THB) stresses using a patterned test chip with aluminum metallization.

TL;DR: In this paper, an MOS transistor on the silicon layer is free from any difference in level between an element region and an element isolation region, and hence from snapping or disconnection of any wiring traversing the boundary between those regions.

TL;DR: In this article, the Laplace transform of the point-wise availability of the system and the steady state availability of system were derived by using the supplementary variable method, and the optimum inspection period was discussed to maximize the steady-state availability.

TL;DR: In this paper, the maintenance policy where a unit is inspected and maintained preventively at periodic intervals, and as the effectiveness becomes younger, the mean time to failure and the expected number of maintenances before failure are obtained.

TL;DR: This paper surveys the research which has been in the area of reliability growth and an extensive list of references is presented.

TL;DR: In this paper, the complexity involved in statistically estimating the reliability of computer components from field data on systems having different operating times is discussed, and the renewal method for estimating component reliability and the corresponding assumptions are explained with an application to some actual field data.

TL;DR: In this article, a method of manufacturing a semiconductor device comprising a step of forming a desired opening in an insulating film formed on a single-crystalline semiconductor substrate is described.

TL;DR: In this article, a k -out-of-N:G three-state unit redundant system availability model including common-caue failures is presented, and the steady-state probability and system availability equations are developed.

TL;DR: In this article, the authors present a device analysis system based on laser scanning techniques, with the intention of measuring and analyzing the characteristics of the sample device, and the measured results with this system are presented.

TL;DR: This paper explores the possibility of studying system reliability, by modelling each component with a multi-state homogeneous Markov model (MHMM), and shows that this approach is of value both in approximating non-exponential probability distributions and in helping to build up suitable models for physical processes.

TL;DR: In this article, two mathematical models are presented for two identical unit active redundant systems whose units may fail in either of the two mutually exclusive failure modes: common cause failures and one standby unit.

TL;DR: In this article, the reliability expressions for four newly developed interference theory models of an identical unit parallel system for the following cases: 1) when component (system) stress and strength are described by Makeham distribution.

TL;DR: In this article, a two-unit parallel redundant system with a single repair facility was discussed, where the lifetimes of two units obey a bivariate exponential distribution and the repair time of the failed unit obeys an arbitrary distribution.

TL;DR: This paper presents a brief introduction and an extensive list of selective references on medical equipment reliability to help clarify the literature on reliability of medical equipment.

TL;DR: In this article, a gas sensitive unit consisting of an integrated gas sensitive semiconductor element and a first resistor member connected to the element in series for deriving an electrical signal from the element.

TL;DR: In this article, an algorithm for enumerating all simple paths in a communication network for specified terminal pairs is presented, which is applicable to the graphs having finite non zero failure probability nodes.

TL;DR: In this paper, a monolithic charge-coupled infrared imaging device (CCIRID) is fabricated on N-type HgCdTe, where a native oxide layer on the semiconductor is used, in combination with ZnS to provide first level insulation.

TL;DR: In this article, an unrepairable two-unit standby redundant system is considered, where each new component for replacement is supplied by an order, and the stochastic behavior of the model applying a unique modification of Markov Renewal Processes is analyzed.

TL;DR: In this paper, the reliability expressions for four interference theory models of an identical unit parallel system were developed for the following cases: 1. (a) when system stress and unit strength are exponentially distributed; 2. (b) both stress and strength follow Maxwellian and exponential distributions, respectively; 3. (c) when both system strength and stress follow power series hazard rate distribution; 4.