Showing papers in "Microelectronics Reliability in 2009"
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TL;DR: This paper reviews the experimental evidence behind a new failure mechanism recently identified in GaN high-electron mobility transistors subject to electrical stress and suggests several paths to enhance the electrical reliability of GaN HEMTs.
441 citations
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TL;DR: The results of the tensile and electrical tests showed that with the screen printing method it is possible to produce highly stretchable electrically conductive patterns for practical applications.
226 citations
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TL;DR: The driving force for the development of nano-composite solders in the electronic packaging industry and the research advances of the composite solders developed are reviewed.
220 citations
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TL;DR: A physics of failure approach to reliability predictions of IGBT modules is detailed and the need for a probabilistic approach for reliability predictions that include the effects of design variations is illustrated.
171 citations
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TL;DR: This work focuses on die attach technologies: solder bonding by means of gold–germanium alloys, adhesive bonding with the use of organic and inorganic conductive compositions, as well as die bonding withthe use of low temperature sintering with silver nanoparticles.
143 citations
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TL;DR: The mathematical descriptions of moisture phase transition with temperature and the governing equations for a deforming polymer with moisture effect are presented in this paper.
143 citations
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TL;DR: It is shown that the latter group of elements have stronger effect on the growth behaviour of IMC’s in the Sn–Cu system than those belonging to the first group.
102 citations
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TL;DR: It is confirmed, that the first 100% solder-free module shows an improved performance in passive and active cycling tests and can be replaced by an Ag diffusion sinter technology.
99 citations
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TL;DR: TEM analysis revealed that electrically degraded devices always contain a pit-like defect next to the drain in the top AlGaN layer, and it has been found that the degree of the defect formation strongly correlates to drain current (IDmax) degradation.
99 citations
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TL;DR: It was proposed that impurities in electroplated Cu helped the nucleation of these voids by making the Cu3Sn layer thinner, and the amount of Kirkendall voids decreased correspondingly with the Ni additions.
98 citations
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TL;DR: A more general RPN methodology, which combines the ordered weighted geometric averaging (OWGA) operator and the decision-making trial and evaluation laboratory (DEMATEL) approach for prioritization of failures in a product FMEA is proposed.
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TL;DR: This paper reviews the significant successes in MEMS products from a reliability perspective including ink jet printhead, inertial sensors, pressure sensors, micro-mirror arrays, and the emerging applications of RF switches and resonators.
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TL;DR: In this work, circuit insights into worst-case conditions and effect of NBTI and PBTI, individually and in combination, on the stability of an SRAM cell are presented and it is shown that measurable quantities such as static noise-margin are not sufficient to completely understand the combined effect ofNBTI/PBTI.
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TL;DR: The microstructural changes during the high temperature aging were characterized in terms of Sn grain size, crystal orientation, and IMC growth kinetics, and were further correlated with the changes of their mechanical properties.
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TL;DR: Vibration fatigue test and analysis methodology for flip chip solder joint fatigue life assessment have been developed by performing vibration tests with constant G -level and varying G-level input excitation to predict vibration fatigue life.
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TL;DR: Investigation of the intermetallic compound growth associated with Sn–0.7Cu and Sn–4.5Cu solders on Ni–Au, Ni–Pd, and Cu substrates found it affected the toughness and reliability of the solder joint, and the relationship between solder and intermetallics microstructure and mechanical properties is discussed.
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TL;DR: This work investigates the scaling capability of Double Gate (DG) and Gate All Around (GAA) MOSFETs using an analytical analysis of the two dimensional Poisson equation in which the hot-carrier induced interface charge effects have been considered and showed that the analytical analysis is in close agreement with the 2-D numerical simulation over a wide range of devices parameters.
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TL;DR: Results of three-dimensional finite-element thermal simulation of GaN HEMT structures differing by geometry, substrate material, passivation, and cooling strategy are simulated and compared to give a picture of the complex interplay of factors that must be reckoned with for proper thermal modeling and management.
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TL;DR: This paper is presenting a novel fault-tolerant voter circuit which itself can tolerate a fault and give error free output by improving the overall system’s reliability.
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TL;DR: A new approach was developed to simultaneously derive atomic diffusivities and effective charge numbers based on simulated annealing (SA) in conjunction with the kinetic model, which provided important insight into the diffusion behaviors driving the IMC growth.
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TL;DR: Effects of Mn and Ti additives on the microstructure and solidification behavior of Sn–1.0Ag–0.5Cu alloys (SAC105), as well as mechanical properties, were investigated and it is shown that the elastic modulus of SAC105 alloys decreased with only a minor alloying addition due to the shrunken eutectic regions and coarsened eutECTic microconstituents.
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TL;DR: The results show that the plate-circular pin-fin heat sink has better synthetical performance than the plate fin heat sink.
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TL;DR: Investigation of the dielectric charging and discharging process in silicon nitride thin films for RF-MEMS capacitive switches reveals that in LF material the stored charge increases with the film thickness while in HF one it is not affected by the film Thickness.
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TL;DR: The research studies in the drop-impact reliability of solder joints in the PCB assemblies intended for mobile applications cover stress–strain characterisation of solders, evaluation of test methods at component and board levels, and investigation of the fatigue characteristics of solder Joints.
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MBDA1
TL;DR: A reliable and reproducible method to reveal the microstructure of lead-free solder joints is described, then used to follow the aging of lead free assembled chip resistors and BGA, with either ENIG or immersion Sn finishes.
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TL;DR: Ti/Al/Ni/Au stack is widely used to form ohmic contact on GaN based semiconductor material but long term thermal storage tests have shown a dramatic degradation of this metal when stored more than 100 h at temperatures above 340 °C.
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TL;DR: Simulation results indicate that both the technique based on PSO and QPSO accurately extracts the model parameters of MESFET, and both avoid complex computational steps involved in traditional parameter extraction techniques.
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TL;DR: All these behaviours of the forward-bias I–V characteristics of the Au/SiO2/n-GaAs (MIS) type SBDs can be successfully explained on the basis of a TE mechanism with a double-Gaussian distribution of the BHs.
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TL;DR: The sequential thermal cycling (TC) and drop impact test are more reasonable to evaluate the reliability of lead-free solder interconnections compared with separate TC test or dropped impact test.
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TL;DR: The fracture toughness was improved due to the increase in modulus from the addition of nitrogen, and the fracture energies determined were found to be consistent with those determined by other techniques.