Showing papers in "Microelectronics Reliability in 2010"

TL;DR: A fusion prognostics approach is presented, which combines or “fuses together” the model-based and data-driven approaches, to enable markedly better prognosis of remaining useful life.

TL;DR: Wafer-level bonding technologies are reviewed and described in detail, including bonding materials and bonding conditions, and the corresponding 3D integration technologies and platforms developed world-wide are addressed.

TL;DR: Experimental results show that the values of e′, e″ and tan δ are a strong function of the temperature, and results indicate the interfacial polarization can be more easily occurred at high temperatures.

TL;DR: This work reviews several electromigration models, focusing on the most well known, continuum physically based models which have been suitable for comprehensive TCAD analysis.

TL;DR: An aging test of high-power 1 W white light emitting diodes underwent an aging test, to identify both their degradation mechanisms and the limitations of the LED chip and package materials, providing a complete understanding of the degradation mechanisms.

TL;DR: In this article, the authors formulated a first-order model for mechanical stress and elastic energy induced by the inverse piezoelectric effect in GaN HEMTs, which allows the computation of the critical voltage for degradation in these devices.

TL;DR: This paper presents supercapacitor ageing according to the voltage, the temperature and thermal shock tests, and Arrhenius law, that describes the effect of temperature on the velocity of a chemical reaction, is considered.

TL;DR: A review of the materials science of ball bonding can be found in this article, focusing on the 1st and 2nd bond formation and intermetallic growth of a thermosonic ball.

TL;DR: Both experimental and finite element analysis have demonstrated that making corner balls non-electrically connected can greatly improve the WLP thermo-mechanical reliability.

TL;DR: The results showed that strain sensitive structures can be made using the materials selected for this study and these materials provide an opportunity to develop strain sensors.

TL;DR: Power cycling tests with identical start condition but different control strategies have been performed, which have been conducted on specially assembled test equipment with ultimate control of all test parameters and show, that different control Strategies deliver lifetime results that vary by a factor of 3.

TL;DR: The electromigration (EM) performance of Through Silicon Via (TSV) in silicon interposer application are studied using Finite Element (FE) modeling and it is found that thermo-mechanical stress is the dominant contribution factor to EM performance in TSV.

TL;DR: It was found that the morphological, structural, electrical and optical properties of AZO films are greatly dependent on sputtering power.

TL;DR: This paper presents an approach for selecting precursor parameters for health monitoring of electronic products that includes failure modes, mechanisms, and effects analysis (FMMEA) and life cycle profile analysis of a product.

TL;DR: To demonstrate the effectiveness of the C-TSV structure for wafer-level 3D integration, feasibility study of the implementation of the novel process and mechanics comparisons of these two 3D chip stacking structures under thermal loading through finite element (FE) stress simulation are made.

TL;DR: A novel semi-empirical approach is presented in which stress, strain, strain rate and temperature are individually treated to create a model capable of predicting material behaviour under arbitrary cyclic loading conditions.

TL;DR: The model is extended to describe the linear current degradation over a wide range of operation conditions and it is found that traps created by the single- and multiple-electron mechanisms are differently distributed over energy with the latter shifted toward higher energies.

TL;DR: It is proposed that the anode electrode plays an important role in the switching characteristics and may be the cause of the asymmetry of the I–V curves between positive and negative operation.

TL;DR: In this paper, different weight percentages of Sb nanoparticles (100-120 nm) ranging from 0 to 1.5 wt% were added to Sn-9Zn eutectic solder alloy to investigate the effect of third element addition on the microstructure, mechanical properties as well as thermal behavior of the newly developed composite solder alloys.

TL;DR: Elect electrically stressed GaN High Electron Mobility Transistors on Si substrate at high voltages observe a pattern of device degradation that differs markedly from previous reports in GaN-on-SiC HEMTs, evidenced by observed correlations between threshold voltage and maximum drain current in fresh devices and their corresponding critical voltages.

TL;DR: This paper investigates experimentally the contribution of vibration effects of printed circuit board effects by first looking at measurement of input parameters and to what accuracy a PCB can reasonably be modelled, and then measuring the extent of manufacturing and assembly induced variability.

TL;DR: A repeatable free-drop system is developed with an adjustable pair of forks to control the impact orientation during the guided free drop, and Digital Image Correlation technique is applied to measure and produce the full-field dynamic responses of PCB.

TL;DR: This paper presents a framework to accurately obtain Soft Error Rate (SER) for high-level (behavioral) descriptions (Verilog or VHDL) in early design stages and transforms the SER problem into equivalent Boolean satisfiability problem and uses state-of-the-art SAT-solvers to obtain SER.

TL;DR: This review covers recent experiments and modeling-simulation work dedicated to the evaluation of natural radiation-induced soft errors in advanced static memory (SRAM) technologies and surveys the characterization results obtained for two SRAM technology nodes.

TL;DR: An analytical model has been developed and validated by experimental measurements in order to evaluate self-heating effects and to understand high temperature effects and should also allow to highlight the role of some physical parameters in the voltage-temperature dependence and to clarify such thermal calibration.

TL;DR: Property of molding compound are discussed which are relevant for the prediction of warpage of micro-electronics products and it is concluded that the cure dependent viscoelastic model is has to be used.

TL;DR: Experimental results show that both the RS and NSS values should be taken into account in determining frequency-dependent electrical characteristics of the interface states in Sn/p-Si metal semiconductor Schottky structures.

TL;DR: In this work LEDs degradation at different temperature and drive current accelerated tests have been analyzed and an exponential degradation trend have been observed.

TL;DR: A method for an automated detection of defects in flip-chip-contacts was developed and the success rate of detecting voids was 96.8% as verified by SEM-imaging, while manual X-ray inspection showed success only in 64% of the analysed cases.

TL;DR: Ageing tests of an EconoPIM IGBT module submitted to PWM power cycling at high ambient temperature are presented to better understand the effects of this kind of cycling test on the module static and switching behaviors.