Showing papers in "Microelectronics Reliability in 2011"

TL;DR: This paper presents a projection of the reliability challenges in 3D IC packaging technology on the basis of what the authors have known from flip chip technology.

TL;DR: An overview of the various aspects of reliability prediction of high power Insulated Gate Bipolar Transistors (IGBTs) in the context of wind power applications is presented.

TL;DR: A degradation model is presented for the prediction of the residual life using an adapted Brownian motion-based approach with a drifting parameter that is adapted to the history of monitored information by Kalman filtering.

TL;DR: The experiment demonstrates that the cooling system with TEC has good performance and the temperature of the substrate of LEDs decreases by 17 °C since the heat produced by LEDs is absorbed rapidly by TEC and dissipated through the radiator.

TL;DR: It is shown that to suppress Cu pumping a pre-CMP anneal is required that is either very long or at a temperature very close to the maximum temperature used in the BEOL processing.

TL;DR: An assessment methodology based on vibration tests and finite element analysis (FEA) to predict the fatigue life of electronic components under random vibration loading and the calculated fatigue life based on the rainflow cycle counting results, the S–N curve, and the modified Miner’s rule agreed with actual testing results.

TL;DR: A probabilistic gate model (PGM) is presented, which relates the output probability to the error and input probabilities of an unreliable logic gate and is shown that the modular PGM approach provides highly accurate results with a moderate computational complexity.

TL;DR: It is shown that carbon-nanotube when used as the structure of TIM or TIM filler could considerably advance thermal management issues by improving heat dissipation from the ECU by highlighting the capability of CVD to grow nanotubes directly on a desired substrate.

TL;DR: The interfacial morphology of unreinforced Sn–Ag–Cu solder and solder joints containing ZrO2 nano-particles with Au/Ni metallized Cu pads on ball grid array (BGA) substrates and the distribution of reinforcing particles were characterized metallographically.

TL;DR: Benefiting from Spin Transfer Torque (STT) switching approach, second generation of Magnetic RAM (MRAM) promises low power, great miniaturization prospective and high power-to-weight ratio.

TL;DR: The Sn–Ag–Cu solder joints containing 1 wt% TiO 2 nano-particles consistently displayed a higher hardness than that of the plain Sn– Ag– Cu solder joints as a function of the number of reflow cycles due to the well-controlled fine microstructure and homogeneous distribution of TiO2 nano- particles which gave a second phase dispersion strengthening mechanism.

TL;DR: To overcome the lower limit of fluid viscosity, double waveforms with two square pulses have been applied to control the droplet formation in the piezoelectric inkjet nozzle and its response has been observed and the effect of the driving voltage and time separation between the pulses was investigated.

TL;DR: A number of solutions to the problems and recent findings/developments related to wire bonding using copper wire or insulated wire are discussed.

TL;DR: The coated Cu bonding wire (EX1) has been developed for LSI application, a Pd-coated Cu wire to enhance the bondability and the excellent humidity reliability of the coated Cu wire, EX1 is suitable for L SI application.

TL;DR: A methodology based on combined electrical trapping analysis with UV-assisted preparation of trap states and electroluminescence analysis was developed to gain detailed understanding of trap generation in AlGaN/GaN HEMTs during off and on-state stress.

TL;DR: It is observed that a suitably designed DMG AlGaN/GaN HEMT can considerably improve the linearity performance and minimize intermodulation distortion due to reduced drain induced barrier lowering and high-field effect; and a more uniform electric field for applications in 3-G mobile communication and low noise amplifiers.

TL;DR: These NiPd(Au) bond are shown to outperform Al in virtually all respects: bond strength, bond parameter window, lack of pad damage and reliability.

TL;DR: The long-term endurance behavior of this novel type of boards is studied by cyclic elongation at strain ranges of up to 20% and monitoring the electrical connectivity, and indications for high-cycle fatigue were found.

TL;DR: A new type of hybrid conductive adhesives filled with silver flakes and carbon nanotubes (DWCNTs) were investigated and the electrical and mechanical properties are consistent with the morphologies of the hybrid composites characterized by SEM.

TL;DR: Those degradation mechanisms that are especially due to the specific material combinations used in GaN based high voltage device technology such as epitaxial layer design, chip metallization, passivation schemes and general device topology and layout are discussed.

TL;DR: It was found that the bonding of a Cu wire and an Al pad formed Cu9Al4, CuAl, and CuAl2 intermetallic compounds, and an initial crack was formed by the ultrasonic squeeze effect during thermosonic wire bonding.

TL;DR: The experimental results showed the via was fully filled without a serious defect by the 3-step PPR process after 80 min of plating, which can be useful for ensuring the reliability of a fragile thin Si wafer for 3D packaging.

TL;DR: It is concluded that the Ga vacancies introduced maybe the primary reason for the degradation of AlGaN/GaN HEMTs performance.

TL;DR: An ant colony optimization (ACO) based algorithm for continuous optimization problems on structural damage detection in the SHM field is proposed and results show that the proposed method is feasible and effective in the ShM field.

TL;DR: The study provides an accurate understanding of the charging and stiction related failure mechanisms, presents guidelines for a proper packaging environment, and reveals precise explanations for the literature reported device level measurements of electrostatic MEMS devices.

TL;DR: A rigorous methodology has been established to introduce copper wire bonding on new as well as converted dice into manufacturing and reliability testing has been extended to demonstrate the viability of this technology.

TL;DR: This work investigates the connection between electrical degradation that occurs around and beyond the critical Voltage and the formation of crystallographic defects through detailed electrical and TEM analysis, respectively and finds that a groove in the GaN cap starts to be generated around the critical voltage.

TL;DR: This paper presents a methodology for generating algorithms that can be used to predict the obsolescence dates for electronic parts that do not have clear evolutionary parametric drivers and has been demonstrated on a range of different electronic parts and for the trending of specific part attributes.

TL;DR: C coupled electro-thermal finite element (FE) analysis and thermal–mechanical FE analysis to analyze the mechanical behavior of bonding wire of power module under cyclic power loads shows compressive stress at the wire/chip interface due to CTE mismatch between the aluminum and the chip.

TL;DR: It is verified that the increase of total trap states (NT) and free carriers resulted in the increasing of DVth as the channel layer thickness increases, which is indicated that the DVth is generated by carrier trapping but not defect creation.