Showing papers in "Physica Status Solidi (a) in 1986"

Transport phenomena in amorphous silicon doped by ion implantation of 3d metals

Abstract: Charge transport in amorphous silicon (aSi) doped with ion implantation of Mn+, Ni+, Fe+, and Cu+ ions is studied using ESR technique, temperature dependence of conductivity σ(T), and thermopower α(T) measurements With increasing of impurity (Mn, Ni, Fe) concentration (from 1018to 1019 cm−3) the localized state density and σ decrease owing to the passivation of silicon dangling bonds with impurity atoms An analysis of conductivity and thermopower data allows to reveal three temperature regions 1) At 250 500 K electron transport dominates 3) At T < 250 K hopping conductivity with variable range hopping near Fermi level prevails For a-Si:Mn in the region of 4 < T < 80 K Coulomb correlations are detected in the behaviour of σ(T) The Coulomb gap is foundto reach a maximum value 25 meV which appears to be one order of value larger than the known (one) in semiconductors doped with shallow impurity levels [Russian Text Ignored]

Properties of Pure and Doped Bi12GeO2oand Bi12SiO20 Crystals

Abstract: Bi12GeO20 (BGO) and Bi12SiO20 (BSO) single crystals doped with Al, Ga, P, Pb, Or, Nd, Zn, Fe, and Eu are grown from the melt in good optical quality. The segregation coefficients of the dopants range from 0.1 to 5. The undoped crystals are yellow; Al, Ga, and P bleach the crystals and increase their dark conductivity. The bleaching of these Bi12MO20 crystals can be explained by assuming a transformation of the absorption center (Bi + h) to B3+M with dopant P, and to B3+M with dopants Ga or Al. The photoconductive behavior, thermally stimulated currents, photolumines-cence at T = 1.3K, thermal expansion, heat capacity, and breaking strength of these crystals are also determined.

Ferroelectric Phase Transitions and Properties of Crystals of the KTiOPO4 Family

Abstract: Crystals of KTiOPO4, RbTiOPO4, and TlTiOPO4 are grown, studied, and found to be ferroelectrics with Curie points of 934, 789, and 581 °C, respectively. The phase transitions are of displacive type and nearly of second order. These crystals have also a high ionic conductivity and can exhibit a strong low-frequency dielectric relaxation. [Russian Text Ignored].

Structure and Phase Transition in (CH3NH3)3Sb2Cl9

Abstract: (CH3NH3)3Sb2Cl9 single crystals are grown which appear to be isomorphous with Cs3Sb2Cl9 crystals of β-modification. They are characterized by the space group Pmcn with the lattice constants: a = 0.7920(5), b = 1.3334(11), and c = 1.966(2) nm. In the crystal one can distinguish the poly-anionic (Sb2Cl9)3- stacks directed along the a-axis with three crystallographically inequivalent CH3NH cations. The DSC, dielectric, and PMR studies reveal a structural phase transition at 208 K which is related to a freezing of rotational motion of CH3NH cations. Kristalle von (CH3NH3)3Sb2Cl9, isomorph zur β-Modifikation von Cs3Sb2Cl9, werden hergestellt. Sie besitzen Pmcn-Symmetrie mit folgenden Gitterkonstanten: a = 0,7920(5); b = 1,3334(11); c = 1,966(2) nm. Entlang der a-Achse kann man polyanionische (Sb2Cl9)3- Saulen, mit CH3NH-Kationen in den kristallographisch inequivalenten Positionen unterscheiden. Die DSC-, dielektrischen und PMR-Untersuchungen zeigen eine strukturelle Phasenumwandlung bei 208 K die mit dem Einfrieren der Rotationsbewegungen der CH3NH-Kationen zusammenhangt.

Defect distribution in ion‐implanted silicon. A Monte Carlo simulation

Abstract: A Monte Carlo simulation is given of the defect distribution within thecascade launched by medium-heavy ions in ion bombarded silicon. The alteration of the ion and recoil distributions, due to dose effects, are accounted for and described. The results favourably compare with the results,reported in literature, on anomalous diffusivity phenomena occurring duringrapid thermal annealing. Es wird eine Monte-Carlo-Simulation der Defektverteilung in der durch Ionenbombardement mit mittelschweren Ionen in Silizium hervorgerufenen Kaskade durchgefuhrt. Die Anderungen der Ionen-und Ruckstosverteilungen infolge der Dosiseffekte werden zugeordnet und beschrieben. Die Ergebnisse stimmen ausgezeichnet mit den Ergebnissen der Literatur uber eine anomale Diffusion wahrend der schnellen thermischen Ausheilung uberein.

crystal structure, absorption, luminescence properties, and stimulated emission of Ga gehlenite (Ca2–xNdxGa2+xSi1–xO7)

Abstract: Full concentration series of tetragonal melilite-like Ca2−xNdxGa2+xSi1−xO7 single crystals with desordered structure are grown using Czochralski technique and their precies X-ray structural analysis is carried out. Intensity, absorption, and luminescence characteristics including orientational ones of Nd2+ ions in Ca2Ga2SiO7 are investigated. Using conventional lamp-pumping technique pulse stimulated emission at the wavelengths of two channels (4F3/2 4I11/m, 13/2) is excied and investigated both, at low and room temperatures. Raman spectra of Ca2Ga2SiO7 are also measured. [Russian Text Ignored.]

Cathodoluminescence of Intrinsic Defects in Glassy SiO2, Thermal SiO2 Films, and α‐Quartz

Abstract: The three dominant cathodoluminescence bands in amorphous SiO2 with maxima at 1.9, 2.7, and 4.3 cV are identical to bands seen in photoluminescence (PL) spectra of irradiated or oxygen-deficient amorphous SiO2. On the basis of the previous PL work these cathodoluminescence (CL) bands can be attributed to non-bridging oxygen (O01) and twofold coordinated silicon (Si01) centers. The CL excitation mechanism involves also ionic processes. The origin of the ubiquitous blue radioluminescence in undamaged α-quartz is different from that of the 2.7 eV band CL in amor-phous SiO2 or electron-damaged α-quartz. A strict correlation between the intensities of CL bands and concentrations of the pertinent defects does not exist. Die drei dominierenden Kathodolumineszenz (KL)-Banden in amorphem SiO2 mit ihren Maxima bei 1,9; 2,7 und 4,3 eV stimmen mit Banden uberein, die in Photolumineszenz (PL)-Spektren von bestrahltem oder redirziertem a-SiO2 zu beobachten sind. Auf der Grundlage vorausgegangener PL-Arbeiten konnen diese KL-Banden mit dem nichtbruckenden Sauerstoffatom (O01) und dem zweifach koordinierten Silizium-Zentrum (Si01) erklart werden. Der KL-Anregungsmechanismus schliest auch ionische Prozesse ein. Die Ursache der stets anwesenden blauen Radiolumineszenz in ungestortem α-Quarz ist verschieden von der der 2,7 eV KL-Bande in a-SiO2 oder der in mit Elektronen beschossenem α-Quarz. Eine strenge Korrelation zwischen den Intensitaten der KL-Banden und der Konzentration der zugehorigen Defekte existiert nicht.

Interstitial Atom Ordering in Binary Fe‐N Solid Solutions Studied by Mössbauer Spectrometry

Abstract: A consistent survey of all the Mossbauer spectra of the γ′, α″, α′, and ϵ phases is given. The hyperfine parameters are discussed. The study of the spectra of ordered structures (γ′, α″, ϵ-FeN0.33) leads to the interpretation of the spectra corresponding to less well ordered phases (α′ and ϵ-FeN0.25). The role of the vibrational contribution to local energies is related to the observed N-atom redistributions. Eine Analyse der Mosbauerspektren der γ′, α″, α′- und ϵ-Phasen wird vorgestellt und die Hyper-feinparameter werden diskutiert. Die Interpretation der weniger geordneten Phasen (α′- und ϵ-FeN0.25) erfolgt an Hand der Untersuchungen der Spektren der geordneten Strukturen (γ′-, α″ - ϵ-FeN0.33). Die Rolle der Schwingungsbeitrage zu den lokalen Energien wird mit der beobachteten Umverteilung der Stickstoffatome verknupft.

Order-Disorder Phase Transition Channel in Niobium Carbide

Abstract: Using a neutron diffraction structure analysis method it is found that an order-disorder phase transition of the first kind occurs in a nonstoichiometric niobium carbide NbCy at a temperature of ≈ 1300 K in the composition range NbC0,81-NbC0,88. The phase transition channel which incorporates five nonequivalent superstructural vectors belonging to three stars is determined. A carbon atom distribution function is obtained which depends on three one-component order parameters. [Russian Text Ignored].

Polymorphism and Properties of Bi2WO6 and Bi2MoO6

Abstract: At low temperatures the compounds Bi2WO6 and Bi2MoO6, like many other related layered ferro-electrics, are electrically polar and transform to nonpolar state on heating. These phase transitions, however, are not ordinary ferroelectric ones and have a reconstructive nature. The two compounds undergo also additional phase transitions which are not accompanied with any noticeable changes in structure or polarization. Some physical properties of Bi2WO6 single crystals and Bi2MoO6 ceramics are studied and discussed.

The time-dependent magnetic behaviour of fine particle systems

Abstract: A numerical study is made in order to investigate the empirical relationship between the coefficient of magnetic viscosity S and the irreversible susceptibility of a fine particle system. The temperature variation of S is also investigated. It is found that recent experiments on recording media cannot be explained for a non-interacting system. The introduction of dipolar interactions is shown to give much better agreement with experimental data. Um die empirische Beziehung zwischen dem Koeffizienten der magnetischen Viskositat S und der irreversiblen Suszeptibilitat eines Systems kleiner Teilchen zu untersuchen, wird eine numerische Untersuchung durchgefuhrt. Die Temperaturanderung von S wird ebenfalls untersucht. Es wird gefunden, das neuere Experimente an Aufzeichnungsmaterialien nicht mit einem nichtwechsel-wirkenden System erklart werden konnen. Die Einfuhrung von Dipolwechselwirkungen ergibt viel bessere Ubereinstimmung mit den experimentellen Daten.

An analytical model of conductance and transconductance for enhanced-mode MOSFETs

Abstract: An analytical model of conductance and transconductance for enhanced-mode MOSFETs is presented. Based on an inversion charge dependent mobility, the model enables the calculation of the conductance and transconductance MOSFET characteristics against several parameters such as bulk bias, oxide thickness, channel length, source-drain series resistance, surface states density, mobility reduction factor and/or potential fluctuation rate. The maximum field effect mobility and the extrapolated threshold voltage deduced from transfer characteristics are then investigated as a function of these parameters. It is finally emphasized that this MOSFET modelprovides a simple but useful tool for analysing the limitations of scaled down devices. Un modele analytique de conductance et de transconductance pour MOSFET a enrichissement est presente. Ce modele base sur une dependance de la mobilite avec la charge d'inversion permet de calculer la conductance et la transconductance de MOSFETs en fonction des parametres tels que la polarisation du substrat, L'epaisseur de L'oxide de grille, la longueur du canal,la resistance serie source-drain, la densite d'etats d'interface, le facteur de reduction de la mobilite et/ou le taux de fluctuation de potentiel. Le maximum de la mobilite d'effet de champ et la tension de seuil extrapolee deduites des caracteristiques de transfert sont analysees en fonction de ces parametres. II est finalement souligneque ce modele de MOSFET procure un outil simple mais utile pour L'investigation des limitations propres a la miniaturisation des dispositifs.

Dielectric Properties of Hexagonal Ferrites

Abstract: Dielectric properties of hexagonal ferrites BaFe12O19, BaTi2Fe4O11, and BaSn2Fe4O11 are examined from 4.2 to 500 K. BaFe12O19 shows low dielectric constant and conductivity, while BaTi2Fe4O11 shows large dielectric constant and conductivity. On the other hand BaSn2Fe4O11 which has the same crystal structure as BaTi2Fe4O11 exhibits very low dielectric constant and conductivity. Ti ions seem to make a large difference in dielectric and electronic properties in these hexagonal ferrites. Three kinds of dielectric relaxations are found in BaTi2Fe4O11 at about 30, 290, and 433 K. The first one is arising from electron transfer between cations, the second one from the Maxwell-Wagner interfacial polarization, and the third one from cation diffusion. Die dielektrischen Eigenschaften von hexagonalen Ferriten BaFe12O19,BaTi2Fe4O11 und BaSn2Fe4O11 werden im Bereich von 4,2 bis 500 K untersucht. BaFe12O19 zeigt eine niedrige Dielektrizitatskonstante und Leitfahigkeit, wahrend BaTi2Fe4O11 eine grose Dielektrizitatskonstante und Leitfahigkeit zeigt. Auf der anderen Seite zeigt BaSn2Fe4O11, das dieselbe Kristallstruktur wie BaTi2Fe4O11 hat, eine sehr niedrige Dielektrizitatskonstante und Leitfahigkeit. Ti-Ionen scheinen einen sehr grosen Unterschied in den dielektrischen Eigenschaften in diesen hexagonalen Ferriten hervorzurufen. Drei Arten von dielektrischen Relaxationen werden in BaTi2Fe4O11 bei etwa 30, 290 und 433 K gefunden. Die erste ruhrt von Elektronentransfer zwischen Kationen, die zweite von Maxwell-Wagner-Grenzflachenpolarisation und die dritte von Kationendiffusion her.

Kinetics of Compositional Ordering in Pb2B′B″O6 Crystals

Abstract: The process of isothermal compositional ordering in the Pb2ScNbO6 ferroelectric and Pb2InNbO6 antiferroelectric is studied. Variation in the degree of the compositional long-range order is brought about by annealing at high temperature and the subsequent quenching and is registered by its effect on dielectric characteristics in the Curie point region. The compositional ordering in oxides studied appeared to proceed most probably via non-nucleation mechanism. In crystals with non-homogeneous defect distribution and in ceramics a macroscopically non-homogeneous process of ordering is observed. A model of the ordering kinetics in ceramics is proposed. [Russian Text Ignored].

Crystal Structure and Cobalt Location in the W-Type Hexagonal Ferrite [Ba]Co2W

Abstract: The crystal structure of BaCo2FeI6027 W-type hexagonal ferrite is refined from room-temperature X-ray single crystal data. This compound is hexagonal: a = 0.59043(7) nm and c = 3.2910(7) nm, the space group is P63/mmc and the cell contains two formula units (Z = 2); the structure can be described by the sequence… RSSR*S*S*… where R and S are the structural blocks already met in the M-type hexagonal structure. By means of neutron diffraction single crystal data recorded at T = 550 °C (in the paramagnetic phase, Tc ≈ 500 °C) the location of the Co2+ cation among the seven sublattices is given: this cation lies essentially in the octahedral and tetrahedral sites of the spinel S-blocks; moreover, the interatomic distances are consistent with a high spin state of this cation. La structure cristalline du ferrite hexagonal de type W, BaCo2Fe16027, a ete precisee a partir de donnees de diffraction X sur monocristal. Ce compose est hexagonal: a = 0,59043(7) nm and c = = 3,2910(7) nm, de groupe d'espace P63/mmc et contient deux unites de formule par maille (Z = 2); la structure peut ětre decrite par la sequence… RSSR*S*S*… ou R et S representent les blocs structuraux deja rencontres dans la phase hexagonale de type M. Par diffraction neutronique sur monocristal, a 550 °C, dans la phase paramagnetique (Tc°500 °C), la localisation de cation Co2+est determinee: ce cation se situe essentiellement sur le site octaedrique et tetraedrique des blocs spinels S; de plus, les distances interatomiques sont en accord avec un etat haut spin de ce cation.

On the nature of deep centres responsible for the memory effect and luminescence of a‐SiNx with x ≦ 4/3

Abstract: Cathodoluminescence et photoluminescence du nitrure de silicium contenant des liaisons ≡Si-Si≡ introduites pendant la synthese. Interpretation par un modele qui suggere des energies de localisation egales pour les electrons et les trous, ce que confirme des etudes de transfert de charge dans des structures NMOS

The investigation of the pressure and temperature dependence of the electrical conductivity of thin zinc oxide films with high resistances

Abstract: The conductivity σ of highly pure, thin zinc oxide films is investigated in the temperature range 500 to 1000 K and in the oxygen pressure range 0.1 to 15 kPa. The results reveal that two competing equilibria are responsible for the conductivity behaviour. In the high-temperature range the activation energy of σ is 1.6 eV and σ is proportional to po. In the low-temperature range the respective values are 0.8 eV and po. The equilibria that are responsible for the conductivity behaviour are the incongruent decomposition in the high-temperature range and oxygen chemisorption in the low-temperature range, where the electron stems from frozen-in zinc excess or from impurities acting as donors. Die Leitfahigkeit σ von hochreinen, dunnen Zinkoxidschichten wird im Temperaturbereich 500 bis 1000 K bei Sauerstoffdrucken zwischen 0,1 und 15 kPa untersucht. Die Ergebnisse zeigen, das zwei miteinander konkurrierende Gleichgewichtszustande fur das Leitfahigkeitsverhalten verant-wortlich sind. Im Hochtemperaturbereich ist die Aktivierungsenergie von σ 1,6 eV und σ ist proportional zu po. Im Niedertemperaturbereich betragen die entsprechenden Werte 0,8 eV und po. Die Gleichgewichte, die fur das Leitfahigkeitsverhalten verantwortlich sind, sind der inkongruente Zerfall im Hochtemperaturbereich und Sauerstoffchemisorption im Niedertemperaturbereich, wobei die Elektronen vom eingefrorenen Zinkuberschus oder von Storstellen, die als Donatoren wirken, stammen.

Structural Phase Transitions in Rb2KMIIIF6 Elpasolites. II. Raman scattering and group‐theoretical studies of Rb2KFeF6 and Rb2KYF6

Abstract: The elpasolite-type compounds Rb2KFeF6 and Rb2KYF6 undergo a structural phase transition at 170 and 398 K, respectively, from high-temperature Fm3m symmetry to a tetragonal or pseudo-tetragonal low-temperature phase. The transitions are studied by Raman scattering. Group to sub-group relations are proposed, leading to the “family tree” of the elpasolite series. The space group for the low-temperature phase of Rb2KYF6 is either P121/nl or P1121/n. It can be concluded that the transition is weakly of first order, although it is apparently continuous. It is probably of the “triggered” type and order-disorder in nature. In the cubic phase of Rb2KYF6, the orientational disorder of the YF6 octahedra may be coupled with a positional disorder of the Rb+ cations. On the basis of group-theoretical considerations and of experimental data, it can be assumed that P4/m, P2/m, P1121/n, and P1 space groups are candidates for the low-temperature phase of Rb2KFeF6; the strong first-order character of this transition prevents from any further hypothesis concerning the transition mechanism. Les composes de type elpasolite Rb2KFeF6 et Rb2KYF6 comportent des transitions de phase structurales respectivement a 170 et 398 K, conduisant de la variete de haute temperature Fm3m a une phase distordue de basse temperature, quadratique ou pseudo-quadratique. Ces transitions de phase ont ete etudiees par diffusion Raman. Les relations de groupe a sous-groupe constituant les „filiations” dans la serie des elpasolites ont ete etablies. Le groupe d'espace de la phase de basse temperature de Rb2KYF6 est P121/nl ou P1121/n. On peut en conclure que cette transition est faiblement du premier ordre, bien qu'elle soit apparemment continue, probablement de type „declenche” et de caractere ordre-desordre. Une hypothese est avancee selon laquelle, dans la phase cubique de Rb2KYF6, un desordre orientationnel des octaedres YF6 est couple a un desordre positionnel des cations Rb+. A partir de considerations basees sur la theorie des groupes et des resultats experimentaux, il apparait que les groupes d'espace P4/m, P2/m, P1121/n et P1 constituent les candidats pour la phase de basse temperature de Rb2KFeF6; cette transition etant fortement du premier ordre, aucune discussion n′a pu ětre menee quant a son mecanisme.

Experimental study of the double kink formation kinetics and kink mobility on the dislocation line in Si single crystals

Abstract: An experimental study is made of the mobility of individual 60° dislocations in Si single crystals under the action of load pulse sequence with the duration of individual pulses being comparable with the time required for the dislocations to pass between adjacent valleys of the potential relief. An essential influence is observed of the parameters of the load pulse sequence (pulse duration (ti) and pulse separation (tp)) on the mean dislocation displacements which decrease with rising tp and decreasing ti from the values obtained during static loading down to zero at certain critical values (ti)cr and (tp)cr. A model is proposed which allows to estimate the main characteristics of the processes of the formation of double kinks and their spreading along the dislocation line using the measured critical parameters. [Russian Text Ignored.]

Heat Capacities of TlInS2 and TlInSe2 Crystals at Low Temperatures

Abstract: Determination des capacites calorifiques par mesures calorimetriques entre 4 et 300 K; analyse des variations en fonction de la temperature et correlation avec les transformations de phase

The Optical Interband Transitions of the Semiconductor CuGaO2

Abstract: Determination des transitions optiques interbande et de la position du bord de la bande de valence d'apres des mesures de l'effet photoelectrochimique

Low temperature magnetization of sputtered amorphous FeNiB films

Abstract: Low temperature magnetization and the law of approach to ferromagnetic saturation is investigated for sputtered amorphous films of composition F80−xNixB20 in the temperature range between 10 and 240 K, and in magnetic fields up to 4 T. The spontaneous magnetization, Ms, follows Bloch's T3/2−law and the high-field magnetization obeys an l/H1/2−law indicating the presence of small elastic stress sources of diameters <4 nm. Annealing effects of -Ms and the spin-wave stiffness constant are attributed to an increase of the magnetic exchange coupling. In amorphen gesputterten Filmen der Zusammensetzung Fe80−xNixB20 werden die Tieftemperatur-magnetisierung und das Einmundungsgesetz im Temperaturbereieh zwischen 10 und 240 K in Magnetfeldern 4 T untersucht. Die spontane Magnetisierung, Ms, gehorcht dem Blochschen T3/2−Gesetz und die Hochfeldmagnetisierung genugt einem 1/H1/2−Gesetz, wodurch auf die Anwesenheit kleiner elastischer Spannungszentren mit Durchmessern <4 nm hingewiesen wird. Ausheileffekte von Ms und der Spinwellensteifigkeitskonstanten werden einer Zunahme der magnetischen Austauschkopplung zugeschrieben.

Isothermal frequency scan DLTS

Abstract: Le mode de balayage isotherme, appele mode de balayage en frequence, presente plusieurs avantages sur le mode de balayage de la temperature. Application a la caracterisation de dommages d'irradiation dans le silicium

Phase Transitions in Ammonium Hexafluorometallates(III)

Abstract: Phase transitions are characterized in several (NH4)3MF6 hexafluorometallates(III) using X-ray diffraction and microcalorimetric techniques. For small trivalent cations (M = Al, V, Cr, Fe, Ga) an Fm3m cubic ⇄ triclinic transition occurs below room temperature. For larger trivalent species, two phase transitions are detected, the low temperature phases (at T = 290 K) being monoclinic (P21/n) and tetragonal (P4/mnc) for Sc and In, respectively. Heat capacity measurements are carried out for (NH4)3CrF6 and (NH4)3GaF6 in a miniaturized adiabatic calorimeter from 12 to 310 K. The entropy variation associated with the phase transition is ΔtrsS(269.6 K) = = 19.4 J K−1 mol−1 and ΔtrsS(246.1 K) = 21.3 J K−1 mol−1, respectively. The change in entropy is compared with those of other (NH4)3MF6 compounds and interpreted in terms of an orientational order-disorder transition. Des transitions de phases out ete caracterisees a l'aide de techniques de diffraction X et de micro-calorimetrie dans des hexafluorometallates (NH4)3MF6. Pour des cations trivalents de petite taille (M = Al, V, Cr, Fe, Ga) une transition cubique Fm3m ⇄ triclinique intervient au-dessous de la temperature ambiante. Pour de plus gros cations trivalents deux temperatures de transitions de phases ont ete observees, les phases de plus basse temperature etant respectivement monoclinique (P21/n) et quadratique (P4/mnc) pour M = Sc et In a 290 K. Les mesures de chaleurs specifiques de (NH4)3CrF6 et (NH4)3GaF6 ont ete effectuees entre 12 et 310 K a l'aide d'un calorimetre adiabatique miniaturise. Les variations d'entropic associees aux transitions de phases sont respectivement: ΔtrsS(269,6) = 19,4 J K−1 mol−1 et > ΔtrsS(246,1 K) = 21,3 J K−1 mol−1. Ces variations d'entropie ont ete comparees a celles d'autres composes (NH4)3MF6 et interpretees en termes de transition d'ordre-desordre orientationnel.

Enhancement of the photovoltaic conversion efficiency in Cu/Cu2O schottky barrier solar cells by H+ ion irradiation

Abstract: A new preparation method of Cu/Cu2O Schottky barrier solarcells is proposed and worked out. It combines resistive evaporation of a thin semitransparent copper electrode on a Cu2O substrate (step I) and exposition of the obtained junction to the H+ ion irradiation (step II). Both, dark and illuminated (AMI) current-voltage characteristics of the cells are recorded at room temperature after each step of the junction formation process. Especially, the influence of H+ ion beam voltage, Ub, on the main solar cell parameters is analysed here. It is proved that low energy H+ ion irradiation (0 < Ub ⪅ 250 V) provides significant enhancement of the photovoltaic conversion efficiency of the Cu/Cu2O solar cells. Es wird eine neue Herstellungsmethode fur Cu/Cu2OSchottkybarrieren-Solarzellen vorgeschlagen und ausgearbeitet. Sie kombiniert Widerstandsaufdampfung einer dunnen halbtransparenten Kupferelektrode auf einem Cu2OSubtrat (Schritt I) und die Exposition des so erhaltenen ubergangs in einer H+−Ionenbestrahlung (Schritt II). Sowohl Dunkel- als auch Beleuchtungs-(AM1)-Strom-Spannungscharakteristiken der Zellen werden bei Zimmertemperatur nach jedem Schritt des ubergangsbildungsprozesses registriert. Insbesondere wird der Einflus der H+−Ionenstrahlspannung, Ub, auf die Hauptparameter der Solarzellen analysiert. Es wird festgestellt, das Niederenergie-H+−Ionenbestrahlung (0 < Ub ⪅ 250 V)ein betrachtliches Anwachsen der Photospannungskonversionseffizienz der Cu/Cu2O-Solarzellen ergibt.