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JournalISSN: 1862-6319

Physica Status Solidi (a) 

John Wiley & Sons Ltd
About: Physica Status Solidi (a) is an academic journal published by John Wiley & Sons Ltd. The journal publishes majorly in the area(s): Silicon & Thin film. It has an ISSN identifier of 1862-6319. Over the lifetime, 30296 publications have been published receiving 360334 citations.


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Journal ArticleDOI
TL;DR: In this paper, the physics of the nitrogen vacancy and other defect centers from the perspective of single defect center spectroscopy were discussed, where the electron spin wave function hyperfine coupling to close nuclei leads to a splitting in the spectrum which allows for optically detected electron nuclear double resonance.
Abstract: The nitrogen vacancy and some nickel related defects in diamond can be observed as single quantum systems in diamond by their fluorescence. The fabrication of single colour centres occurs via generation of vacancies or via controlled nitrogen implantation in the case of the nitrogen vacancy (NV) centre. The NV centre shows an electron paramagnetic ground and optically excited state. As a result electron and nuclear magnetic resonance can be carried out on single defects. Due to the localized nature of the electron spin wavefunction hyperfine coupling to nuclei more than one lattice constant away from the defect as dominated by dipolar interaction. As a consequence the coupling to close nuclei leads to a splitting in the spectrum which allows for optically detected electron nuclear double resonance. The contribution discusses the physics of the NV and other defect centre from the perspective of single defect centre spectroscopy.

837 citations

Journal ArticleDOI
TL;DR: In this paper, the authors provide a snapshot of the current state of droop research, reviews currently discussed droop mechanisms, contextualizes them, and proposes a simple yet unified model for the LED efficiency droop.
Abstract: Nitride-based light-emitting diodes (LEDs) suffer from a reduction (droop) of the internal quantum efficiency with increasing injection current. This droop phenomenon is currently the subject of intense research worldwide, as it delays general lighting applications of GaN-based LEDs. Several explanations of the efficiency droop have been proposed in recent years, but none is widely accepted. This feature article provides a snapshot of the present state of droop research, reviews currently discussed droop mechanisms, contextualizes them, and proposes a simple yet unified model for the LED efficiency droop. Illustration of LED efficiency droop (details in Fig. 13).

778 citations

Journal ArticleDOI
TL;DR: In this article, the plasmon LO-phonon coupled modes whose spectral profiles are used to evaluate the carrier concentration and mobility of SiC crystals are discussed, and anisotropic electronic properties of α-SiC and characteristics of heavily doped crystals are also treated.
Abstract: It has been recognized that Raman scattering spectroscopy is a powerful tool to characterize SiC crystals non-destructively. We review recent significant developments in the use of Raman scattering to study structural and electronic properties of SiC crystals. The areas to be discussed in the first part include polytype identification, evaluation of stacking disorder and ion-implantation damages, and stress evaluation. The Raman scattering by electronic transitions is discussed in the second part of this article. We concentrate on the plasmon LO-phonon coupled modes whose spectral profiles are used to evaluate the carrier concentration and mobility. Anisotropic electronic properties of α-SiC and characteristics of heavily doped crystals are discussed. Semiconductor-to-metal transition and Fano interference effect are also treated.

776 citations

Journal ArticleDOI
J. H. Mooij1
TL;DR: In this article, the origin of the low temperature coefficient of resistance in NiCr thin films is investigated, and it is shown that this coefficient is an intrinsic property of the alloy.
Abstract: Results are presented of an investigation on the origin of the low temperature coefficient of resistance in NiCr thin films. It is shown that this low temperature coefficient is an intrinsic property of the alloy. Besides NiCr a large number of disordered alloys containing transition metals have similar conduction properties, both in bulk and as a thin film. For these materials a correlation has been found between the resistivity and its temperature coefficient. These anomalous conduction properties are probably caused by the very small electron mean free path in these materials.

751 citations

Journal ArticleDOI
TL;DR: In this article, an improved analysis of low frequency trapping noise in a MOS device is proposed, taking into account the supplementary fluctuations of the mobility induced by those of the interface charge, which enables an adequate description of the gate voltage dependence of the input equivalent gate voltage noise to be obtained in various actual situations.
Abstract: An improved analysis of low frequency trapping noise in a MOS device is proposed. This analysis takes into account the supplementary fluctuations of the mobility induced by those of the interface charge. It enables an adequate description of the gate voltage dependence of the input equivalent gate voltage noise to be obtained in various actual situations. The outputs given by the Hooge mobility fluctuation model are also presented and discussed with respect to those obtained by the carrier number fluctuation model. In particular, the impact of the channel length or channel width, and the model type on the input gate voltage and drain current noise characteristics is studied and compared to typical experimental data. Finally, a procedure for the diagnosis of the low frequency noise sources in a MOS transistor is proposed.

673 citations

Performance
Metrics
No. of papers from the Journal in previous years
YearPapers
202323
2022180
2021374
2020355
2019439
2018531