Showing papers in "Progress in Crystal Growth and Characterization of Materials in 2017"

TL;DR: In this paper, the fundamental roadblocks for the epitaxial growth of highly mismatched III-V materials, including arsenides, phosphides, and antimonides, on (001) oriented silicon substrates are discussed.

TL;DR: In this paper, the authors show that optical germanium-on-insulator (GeOI) substrates fabricated by the Smart Cut™ technology is a key feature for future Si-complementary metal oxide Semiconductor (CMOS) compatible laser demonstration.

TL;DR: In this article, the results of structural analysis of the SnO 2 and In 2 O 3 films deposited by spray pyrolysis are presented, highlighting a correlation between parameters of film deposition and the material structure and formulating some general regularities typical for metal oxides.

TL;DR: In this article, a plasma-assisted molecular beam epitaxy (PA MBE) was used for the first time to grow zinc-blende GaN up to 100 μm in thickness and up to 3-inch in diameter.

TL;DR: In this article, the authors highlight the recent achievements in the characterization of 2D materials and highlight that a big challenge remains in the characterizations of the two-dimensional materials in the hybrid or composite and wide acceptance of the characterization standards need to be established to further promote the industrialization of the 2D material in the near future.

TL;DR: A review of proteins involved in the synthesis of different crystals in distinct biological systems, in order to understand how each organism has adapted its genome to preserve essential mechanisms such as biomineralization, which has enabled them to survive in a changing environment for millions of years is given in this article.

TL;DR: In this article, the growth of inorganic and corganic compounds in various types of gels and under different conditions is studied, including cyclodextrins and other derivatives of the main group elements.

TL;DR: In this paper, a quantitative method to deduce the occupation sites and their occupancies, as well as the site-dependent chemical states of the doped elements, using a combination of transmission electron microscopy (TEM), energy-dispersive X-ray (EDX) spectroscopy, and electron energy-loss spectroglobalization (EELS).