Showing papers in "Progress in Photovoltaics in 2009"

The path to 25% silicon solar cell efficiency: History of silicon cell evolution

Abstract: The first silicon solar cell was reported in 1941 and had less than 1% energy conversion efficiency compared to the 25% efficiency milestone reported in this paper. Standardisation of past measurements shows there has been a 57% improvement between confirmed results in 1983 and the present result. The features of the cell structure responsible for the most recent performance increase are described and the history of crystalline and multicrystalline silicon cell efficiency evolution is documented. Copyright © 2009 John Wiley & Sons, Ltd.

Cu2ZnSnSe4 thin film solar cells produced by selenisation of magnetron sputtered precursors

Abstract: Polycrystalline thin films of Cu2ZnSnSe4 (CZTSe) were produced by selenisation of Cu(Zn,Sn) magnetron sputtered metallic precursors for solar cell applications. The p-type CZTSe absorber films were found to crystallize in the stannite structure (a = 5·684 A and c = 11·353 A) with an electronic bandgap of 0·9 eV. Solar cells with the indium tin oxide structure (ITO)/ZnO/CdS/CZTSe/Mo were fabricated with device efficiencies up to 3·2% measured under standard AM1·5 illumination. Copyright © 2009 John Wiley & Sons, Ltd.

History of accelerated and qualification testing of terrestrial photovoltaic modules: A literature review

Abstract: We review published literature from 1975 to the present for accelerated stress testing of flat-plate terrestrial photovoltaic (PV) modules. An important facet of this subject is the standard module test sequences that have been adopted by national and international standards organizations, especially those of the International Electrotechnical Commission (IEC). The intent and history of these qualification tests, provided in this review, shows that standard module qualification test results cannot be used to obtain or infer a product lifetime. Closely related subjects also discussed include: other limitations of qualification testing, definitions of module lifetime, module product certification, and accelerated life testing. Copyright © 2008 John Wiley & Sons, Ltd.

The results of performance measurements of field‐aged crystalline silicon photovoltaic modules

Abstract: This paper presents the results of electrical performance measurements of 204 crystalline silicon-wafer based photovoltaic modules following long-term continuous outdoor exposure. The modules comprise a set of 53 module types originating from 20 different producers, all of which were originally characterized at the European Solar Test Installation (ESTI), over the period 1982–1986. The modules represent diverse generations of PV technologies, different encapsulation and substrate materials. The modules electrical performance was determined according to the standards IEC 60891 and the IEC 60904 series, electrical insulation tests were performed according to the recent IEC 61215 edition 2. Many manufacturers currently give a double power warranty for their products, typically 90% of the initial maximum power after 10 years and 80% of the original maximum power after 25 years. Applying the same criteria (taking into account modules electrical performance only and assuming 2·5% measurement uncertainty of a testing lab) only 17·6% of modules failed (35 modules out of 204 tested). Remarkably even if we consider the initial warranty period i.e. 10% of Pmax after 10 years, more than 65·7% of modules exposed for 20 years exceed this criteria. The definition of life time is a difficult task as there does not yet appear to be a fixed catastrophic failure point in module ageing but more of a gradual degradation. Therefore, if a system continues to produce energy which satisfies the user need it has not yet reached its end of life. If we consider this level arbitrarily to be the 80% of initial power then all indications from the measurements and observations made in this paper are that the useful lifetime of solar modules is not limited to the commonly assumed 20 year. Copyright © 2008 John Wiley & Sons, Ltd.

Very high efficiency solar cell modules

Abstract: The Very High Efficiency Solar Cell (VHESC) program is developing integrated optical system–PV modules for portable applications that operate at greater than 50% efficiency. We are integrating the optical design with the solar cell design, and have entered previously unoccupied design space. Our approach is driven by proven quantitative models for the solar cell design, the optical design, and the integration of these designs. Optical systems efficiency with an optical efficiency of 93% and solar cell device results under ideal dichroic splitting optics summing to 42·7 ± 2·5% are described. Copyright © 2008 John Wiley & Sons, Ltd.

Ex‐ante environmental and economic evaluation of polymer photovoltaics

Abstract: The useof polymermaterialsforphotovoltaicapplications isexpected tohaveseveraladvantages over current crystalline silicon technology. In this paper, we perform an environmental and economic assessment of polymer-based thin film modules with a glass substrate and modules with a flexible substrate and we compare our results with literature data for multicrystalline (mc-) silicon photovoltaics and other types of PV. The functional unit of this study is ‘25 years of electricity production by PV systems with a power of 1 watt-peak (Wp)’. Because the lifetime of polymer photovoltaics is at present much lower than of mc-silicon photovoltaics, we first compared the PV cells per watt-peak and next determined the minimum required lifetime of polymer PV to arrive at the same environmental impacts as mc-silicon PV. We found that per watt-peak of output power, the environmental impacts compared to mc-silicon are 20‐60% lower for polymer PV systems with glass substrate and 80‐95% lower for polymer PV with PET as substrate (flexible modules). Also in comparison with thin film CuInSe and thin film silicon, the impacts of polymer modules, per watt-peak, appeared to be lower. The costs per watt-peak of polymer PV modules with glass substrate are approximately 20% higher compared to mc-silicon photovoltaics. However, taking into account uncertainties, this might be an overestimation. For flexible modules, no cost data were available. If the efficiency and lifetime of polymer PV modules increases, both glass-based and flexible polymer PV could become an environment friendly and cheap alternative to mc-silicon PV. Copyright # 2009 John Wiley & Sons, Ltd.

Spectral Response and Energy Output of Concentrator Multijunction Solar Cells

Abstract: The spectral response of concentrator multijunction solar cells has been measured over a temperature range of 25–75°C. These data are combined with reference spectra representing the AM1·5 standard as well as annual spectral irradiance at representative geographical locations. The results suggest that higher performance in the field may be obtained if multijunction cells are designed for an effective air mass higher than AM1·5. Copyright © 2008 John Wiley & Sons, Ltd.

Increase in external quantum efficiency of encapsulated silicon solar cells from a luminescent down-shifting layer

Abstract: This paper reports the external quantum efficiency (EQE) of encapsulated screen-printed crystalline silicon solar cells, where the encapsulation includes a layer of luminescent down-shifting (LDS) molecules. At wavelengths less than 400 nm, the inclusion of the LDS molecules increases the EQE from near zero to, at most, 40%. The increase in EQE corresponds to a rise in short-circuit current density of 0·37 ± 0·13 mA/cm2 under the AM1-5g spectrum. Copyright © 2008 John Wiley & Sons, Ltd.

Estimates of te and in prices from direct mining of known ores

Abstract: Previous estimates of Te and In availability for large scale use in photovoltaics have been based on considerations such as present refining capacities or on reserves calculated from the concentration of these metals in their respective Cu and Zn primary ores. The present work considers the pricing required to support direct mining of these scarce metals from ores of presently known quality. By deriving a general relationship between the market price of metals and the quality of ores from which they are mined, estimates of the market price of Te and In if mined from available ores are obtained. This allows specification of ore grades required for economic photovoltaic exploitation. Known ore deposits meeting requirements are also surveyed. Copyright © 2009 John Wiley & Sons, Ltd.

The Zn(S,O,OH)/ZnMgO buffer in thin-film Cu(In,Ga)(Se,S)2-based solar cells part II: Magnetron sputtering of the ZnMgO buffer layer for in-line co-evaporated Cu(In,Ga)Se2 solar cells

Abstract: A ZnS/Zn1-xMgxO buffer combination was developed to replace the CdS/i-ZnO layers in in-line co-evaporated Cu(In,Ga)Se2(CIGS)-based solar cells. The ZnS was deposited by the chemical bath deposition (CBD) technique and the Zn1-xMgxO layer by RF magnetron sputtering from ceramic targets. The [Mg]/([Mg] + [Zn]) ratio in the target was varied between x = 0·0 and 0·4. The composition, the crystal structure, and the optical properties of the resulting layers were analyzed. Small laboratory cells and 10 × 10 cm2 modules were realized with high reproducibility and enhanced stability. The transmission is improved in the wavelength region between 330 and 550 nm for the ZnS/Zn1-xMgxO layers. Therefore, a large gain in the short-circuit current density up to 12% was obtained, which resulted in higher conversion efficiencies up to 9% relative as compared to cells with the CdS/i-ZnO buffer system. Peak efficiencies of 18% with small laboratory cells and 15·2% with 10 × 10 cm2 mini-modules were demonstrated. Copyright © 2009 John Wiley & Sons, Ltd.

Crystalline silicon solar module technology: Towards the 1 € per watt-peak goal

Abstract: Crystalline silicon solar module manufacturing cost is analysed, from feedstock to final product, regarding the equipment, labour, materials, yield losses and fixed cost contributions. Data provided by European industrial partners are used to describe a reference technology and to obtain its cost breakdown. The analysis of the main cost drivers allows to define new generation technologies suitable to reduce module cost towards the short-term goal of 1 € per watt-peak. This goal roughly corresponds with the cost level needed to enable ‘grid parity’: the situation solar electricity becomes competitive with retail electricity. The new technologies are described and their costs are analysed. Cost reductions due to scale effects in production are also assessed for next generation manufacturing plants with capacities in the range of several hundreds of megawatts to one gigawatt of module power per year, which are to come in the near future. The combined effects of technology development and economies of scale bring the direct manufacturing costs of wafer-based crystalline silicon solar modules down into the range of 0·9–1·3 € per watt-peak, according to current insights and information (the range results from differences between technologies as well as from uncertainties per technology). Copyright © 2008 John Wiley & Sons, Ltd.

Selective Laser Ablation of SiNx Layers on Textured Surfaces for Low Temperature Front Side Metallizations

Abstract: For an alternative front side metallization process without screen printing of metal paste the selective opening of the front surface anti-reflection coating could be realized by laser ablation. A successful implementation of this scheme requires direct absorption of the laser light within the anti-reflection coating, since the emitter underneath must not be damaged severely. Additionally, the ablation must be feasible on textured surfaces. In this paper, we show that laser light with a wavelength of 355 nm and a pulse length of approximately 30 ns is absorbed directly by a typical silicon nitride anti-reflection coating. Based on lifetime measurements on ablated samples it is shown that a damage free laser ablation of SiNx layers on planar surfaces is possible. The characteristic ablation structure on textured surfaces is explained and quantified by rigorous coupled wave analysis (RCWA) simulations. Finally, high efficiency solar cells with a standard emitter (Rsh approx. 50 Ω/sq) have been processed using laser ablation of the silicon nitride anti-reflection coating. These cells show efficiencies of up to 19·1%, comparable to the reference solar cells using photolithographically opened contact areas. Copyright © 2008 John Wiley & Sons, Ltd.

Comprehensive analysis of advanced solar cell contacts consisting of printed fine‐line seed layers thickened by silver plating

Abstract: This work presents a detailed analysis of a new two-layer process to contact industrial solar cells. However, most of the results seem to be transferable to standard screen print paste contacts. The seed layer was created by a pad or screen printer and thickened by light-induced plating (LIP) of silver. These contact structures were investigated microscopically to gain a better understanding of the observed electrical parameters. A review of the present microscopic contact formation model for flat surfaces is presented. This model was extended and applied to surfaces textured with random pyramids. This analysis has revealed two new types of silver crystallites which can be described by a crystallographic model. The dependence of the silver crystallite density on the surface doping concentration was investigated. Next, the dependence of the contact resistance on the width of the seed layer was measured showing that the contact resistivity increases with a reduction of the seed layer width. These results have been further approved by an analysis of SEM images of wet-chemically etched contacts examining the density of crystallites and the fraction of removed SiNx layer. Contact resistance RC measurements before and after LIP of silver showed surprisingly a positive influence of the plating process on RC. A detailed microscopical analysis revealed four new possible current flow paths due to the LIP of a conventional contact or a seed layer. The results led to an extension of the existing model for a screen-printed contact. Copyright © 2008 John Wiley & Sons, Ltd.

TCOs for nip thin film silicon solar cells

Abstract: Substrate configuration allows for the deposition of thin film silicon (Si) solar cells on non-transparent substrates such as plastic sheets or metallic foils. In this work, we develop processes compatible with low Tg plastics. The amorphous Si (a-Si:H) and microcrystalline Si (µc-Si:H) films are deposited by plasma enhanced chemical vapour deposition, at very high excitation frequencies (VHF-PECVD). We investigate the optical behaviour of single and triple junction devices prepared with different back and front contacts. The back contact consists either of a 2D periodic grid with moderate slope, or of low pressure CVD (LP-CVD) ZnO with random pyramids of various sizes. The front contacts are either a 70 nm thick, nominally flat ITO or a rough 2 µm thick LP-CVD ZnO. We observe that, for a-Si:H, the cell performance depends critically on the combination of thin flat or thick rough front TCOs and the back contact. Indeed, for a-Si:H, a thick LP-CVD ZnO front contact provides more light trapping on the 2D periodic substrate. Then, we investigate the influence of the thick and thin TCOs in conjunction with thick absorbers (µc-Si:H). Because of the different nature of the optical systems (thick against thin absorber layer), the antireflection effect of ITO becomes more effective and the structure with the flat TCO provides as much light trapping as the rough LP-CVD ZnO. Finally, the conformality of the layers is investigated and guidelines are given to understand the effectiveness of the light trapping in devices deposited on periodic gratings

Reciprocity between electroluminescence and quantum efficiency used for the characterization of silicon solar cells

Abstract: Spectrally and spatially resolved electroluminescence emission of crystalline silicon solar cells is interpreted in terms of two electro-optical reciprocity relations. The first relation links the photovoltaic quantum efficiency to the electroluminescence spectrum. Both methods contain information on recombination and the optical pathlength of the incident light, simultaneously. From the electroluminescence spectrum, we derive the pathlength enhancement factor of textured and untextured crystalline silicon solar cells. Further, we use local quantum efficiency measurements to quantitatively explain light induced current as well as panchromatic electroluminescence images. A second reciprocity relation connects open circuit voltage of a solar cell with the light emitting diode quantum efficiency of the same device. For a given quality of light trapping and a given open circuit voltage, we predict the attainable LED quantum efficiency and verify our results experimentally. Copyright © 2009 John Wiley & Sons, Ltd.

Recovery of silicon from kerf loss slurry waste for photovoltaic applications

Abstract: The constantly rising price of silicon feedstock has been the most important factor preventing photovoltaic (PV) energy from reaching grid parity. On the other hand, large amount of silicon gets wasted during slicing. We report a promising approach to recycle kerf loss silicon from cutting slurry waste for solar cell applications. Silicon carbide (SiC) and metal impurities were successfully removed by chemical/ physical processing from the slurry waste to recover solar grade silicon. The effects of centrifugation using heavy fluids and high-temperature treatment in the removal of SiC particles are discussed in detail. Ingots from the recycled silicon were grown by using directional solidification. The average resistivity and minority carrier lifetime of the grown crystals were found to be about 0·7 Ω cm and 1·02 µs, respectively, which were close to the original sawing silicon ingots. Solar cells using multi-crystalline wafers of recovered silicon were fabricated and the best energy conversion efficiency was found to be 12·6% comparable to those from the high-purity silicon. Copyright © 2008 John Wiley & Sons, Ltd.

Enhanced lateral current transport via the front N+ diffused layer of n‐type high‐efficiency back‐junction back‐contact silicon solar cells

Abstract: N-type back-contact back-junction solar cells were processed with the use of industrially relevant structuring technologies such as screen-printing and laser processing. Application of the low-cost structuring technologies in the processing of the high-efficiency back-contact back-junction silicon solar cells results in a drastic increase of the pitch on the rear cell side. The pitch in the range of millimetres leads to a significant increase of the lateral base resistance. The application of a phosphorus doped front surface field (FSF) significantly reduces the lateral base resistance losses. This additional function of the phosphorus doped FSF in reducing the lateral resistance losses was investigated experimentally and by two-dimensional device simulations. Enhanced lateral majority carrier's current transport in the front n+ diffused layer is a function of the pitch and the base resistivity. Experimental data show that the application of a FSF reduces the total series resistance of the measured cells with 3.5 mm pitch by 0.1 Ω cm2 for the 1 Ω cm base resistivity and 1.3 Ω cm2 for the 8 Ω cm base resistivity. Two-dimensional simulations of the electron current transport show that the electron current density in the front n+ diffused layer is around two orders of magnitude higher than in the base of the solar cell. The best efficiency of 21.3% was obtained for the solar cell with a 1 Ω cm specific base resistivity and a front surface field with sheet resistance of 148 Ω/sq. Copyright © 2008 John Wiley & Sons, Ltd.

Encapsulating Eu3+ complex doped layers to improve Si‐based solar cell efficiency

Abstract: This paper reports the electrical characterization of commercially available crystalline silicon solar cells encapsulated with poly-vinylacetate doped with different Eu3+ organic complexes. The inclusion of these complexes in the encapsulating matrix allows down-shifting of the solar spectrum components below 420 nm toward the maximum quantum efficiency of the solar cells. This effect has been proven under Air Mass 1·5 conditions (simulating terrestrial applications) where an increase of the total power delivered by the encapsulated cells has been observed. Moreover, this enhancement has been obtained using very low percentage by weight of organolanthanide dopants, allowing a reduction in the Watt peak price. At higher concentrations a strong quenching of the energy transfer from the organic antenna to the lanthanide ion has been observed. Copyright © 2009 John Wiley & Sons, Ltd.

Do built‐in fields improve solar cell performance?

Abstract: Intrinsic fields can be built into solar cells by varying the doping level and/or the cell bandgap with potential benefits long recognised. A counteracting effect is that varying the doping or bandgap from the optimum for a particular material system will result in poorer material quality. New solutions are described to the standard semiconductor transport and recombination equations that allow such effects to be incorporated and the impact of these fields on device current and voltage to be assessed. Clear boundaries are found between when built-in fields are beneficial or deleterious. For the case of doping gradients, built-in fields decrease both cell current and voltage if carrier lifetime decrease more quickly than as the inverse square of doping; decrease current but can increase voltage if the inverse variation is between linear and square; can improve both if less than linear but only significantly if lifetime varies less than the inverse square root of doping. In the case of a graded bandgap, an optimal field exists as a trade-off between decreased absorption and increased carrier collection. Copyright © 2008 John Wiley & Sons, Ltd.

Origin of the low carrier lifetime edge zone in multicrystalline PV silicon

Abstract: An investigation of impurities, crystal defects and microstructure has been performed on the edge zone, i.e. close to the crucible wall, which experiences reduced carrier lifetime in a directionally solidified multicrystalline p-doped silicon ingot. The characterization methods applied have been QSSPC, FTIR, μW-PCD, EBSD, CDI, PVScan, optical microscopy, FeB-pair splitting and GDMS. The results of the minority carrier lifetime measurements have revealed strongly reduced values in the vicinity of the edge (< 1 μs). Increased values were obtained starting at 15–17 mm from the edge. Light elements analyses showed that the O, N and C concentrations, interstitially or in particles, did not increase in the edge zone, neither did the dislocation density. GDMS analyses detected traces of aluminium, iron, copper, titanium and chromium. The total iron concentration showed an increase towards the edge, though high concentrations were occasionally detected in the bulk. FeB pair analysis revealed large concentrations of Fe (∼1 × 1013 cm−3) in the vicinity of the edge with a distinctively decreasing trend moving away from the edge. The detected FeB-concentrations are sufficient to account for the majority of the lifetime degradation close to the edge (0--15 mm). In addition, Fe, in the form of FeB pairs, was extensively observed as object to internal gettering to high angle boundaries and dislocations. Fe, in the form of FeB pairs, is furthermore believed to originate from solid state diffusion from the crucible and coating. Copyright © 2008 John Wiley & Sons, Ltd.

The Zn(S,O,OH)/ZnMgO buffer in thin film Cu(In,Ga)(S,Se)2‐based solar cells part I: Fast chemical bath deposition of Zn(S,O,OH) buffer layers for industrial application on Co‐evaporated Cu(In,Ga)Se2 and electrodeposited CuIn(S,Se)2 solar cells

Abstract: This paper is focused on the basic study and optimization of short time (<10 min) Chemical Bath Deposition (CBD) of Zn(S,O,OH) buffer layers in co-evaporated Cu(In,Ga)Se2 (CIGSe) and electrodeposited CuIn(S,Se)2 ((ED)-CIS) solar cells for industrial applications. First, the influence of the deposition temperature is studied from theoretical solution chemistry considerations by constructing solubility diagrams of ZnS, ZnO, and Zn(OH)2 as a function of temperature. In order to reduce the deposition time under 10 min, experimental growth deposition studies are then carried out by the in situ quartz crystal microgravimetry (QCM) technique. An optimized process is performed and compared to the classical Zn(S,O,OH) deposition. The morphology and composition of Zn(S,O,OH) films are determined using SEM and XPS techniques. The optimized process is tested on electrodeposited-CIS and co-evaporated-CIGSe absorbers and cells are completed with (Zn,Mg)O/ZnO:Al windows layers. Efficiencies similar or even better than CBD CdS/i-ZnO reference buffer layers are obtained (15·7% for CIGSe and 8·1% for (ED)-CIS). Copyright © 2009 John Wiley & Sons, Ltd.

Energy Payback Time of Grid Connected PV Systems : Comparison Between Tracking and Fixed Systems

Abstract: A review of existing studies about life cycle assessment (LCA) of PV systems has been carried out. The data from this review have been completed with our own figures in order to calculate the energy payback time (EPBT) of double and horizontal axis tracking and fixed systems. The results of this metric span from 2 to 5 years for the latitude and global irradiation ranges of the geographical area comprised between -10° to 10° of longitude, and 30° to 45° of latitude. With the caution due to the uncertainty of the sources of information, these results mean that a grid connected PV system (GCPVS) is able to produce back the energy required for its existence from 6 to 15 times during a life cycle of 30 years. When comparing tracking and fixed systems, the great importance of the PV generator makes advisable to dedicate more energy to some components of the system in order to increase the productivity and to obtain a higher performance of the component with the highest energy requirement. Both double axis and horizontal axis trackers follow this way, requiring more energy in metallic structure, foundations and wiring, but this higher contribution is widely compensated by the improved productivity of the system.

Performance of a mesoscale liquid fuel‐film combustion‐driven TPV power system

Abstract: Combustion-driven thermophotovoltaic (TPV) systems have obtained increasing attention in recent decades, but most studies have focused on developing narrowband photovoltaic cells and selective emitters. In terms of the heat source, conventional combustion configurations and light gaseous fuels are extensively utilized in macro- or meso-scale TPV power systems to simplify thermal management and mechanical fabrication. As far as miniaturization is concerned, however, fuelling these systems with liquid hydrocarbons would provide inherent advantages of high energy density and low volatility. Liquid fuels also promise easy and safe fuel recharging for small-scale power systems. In this paper, a central porous-medium combustor was employed in a small scale TPV power system. The combustor incorporated an emitting chamber wall and a heat recuperator. The radiant efficiency and overall efficiency were compared using different liquid hydrocarbon fuels in the system. The electric output characteristics of the combustion driven TPV system have been investigated to demonstrate the feasibility of a GaSb cell-based TPV power system and to provide design guidance for mesoscale liquid-burning TPV systems. Copyright © 2008 John Wiley & Sons, Ltd.

A monolithic three‐terminal GaInAsP/GaInAs tandem solar cell

Abstract: We describe the design and performance of a three-terminal tandem solar cell for low-concentration terrestrial applications. Designed for operation under a GaAs filter, the tandem demonstrates cumulative conversion efficiencies of 10.2 and 11.9% at 1 sun and 45 suns, respectively, under the concentrated direct spectrum. The middle terminal is shared between the two subcells and allows them to be operated independently at their respective maximum power points. Copyright # 2009 John Wiley & Sons, Ltd.

Sunrise to sunset optimization of thin film antireflective coatings for encapsulated, planar silicon solar cells

Abstract: We present an approach for the optimization of thin film antireflective coatings for encapsulated planar silicon solar cells in which the variations in the incident spectra and angle of incidence (AOI) over a typical day are fully considered. Both the angular and wavelength dependences of the reflectance from the surface, absorptance within the coating, and transmittance into the device are calculated for both single- and doublelayer antireflection coatings with and without thin silicon oxide passivation layers. These data are then combined with spectral data as a function of time of day and internal quantum efficiency to estimate the average short-circuit current produced by a fixed solar cell during a day. This is then used as a figure of merit for the optimization of antireflective layer thicknesses for modules placed horizontally at the equator and on a roof in the UK. Our results indicate that only modest gains in average short-circuit current could be obtained by optimizing structures for sunrise to sunset irradiance rather than AM15 at normal incidence, and fabrication tolerances and uniformities are likely to be more significant. However, we believe that this overall approach to optimization will be of increasing significance for new, potentially asymmetric, antireflection schemes such as those based on subwavelength texturing or other photonic or plasmonic technologies currently under development especially when considered in combination with modules fixed at locations and directions that result in asymmetric spectral conditions.

Temperature‐dependent current‐voltage and lightsoaking measurements on Cu(In,Ga)Se2 solar cells with ALD‐Zn1‐xMgxO buffer layers

Abstract: In this paper, lightsoaking and temperature-dependent current-voltage (JVT) measurements on Cu(In,Ga)Se2 solar cells with atomic layer deposited Zn1-xMgxO buffer layers are presented. A range of Mg ...

Shunting Problems Due to Sub-Micron Pinholes in Evaporated Solid-Phase Crystallised Poly-Si Thin-Film Solar Cells on Glass

Abstract: Recent progress in the metallisation of poly-silicon thin-film solar cells on glass, created by solid phase crystallisation (SPC) of evaporated amorphous silicon (EVA), revealed that shunting through sub-micron holes (density 100–200 mm−2) in the films causes severe shunting problems when the air-side metal contact is deposited onto these diodes, by creating effective shunting paths between the two highly doped layers of EVA cells. We present evidence of these pinholes by optical transmission and focussed ion beam (FIB) microscopic images and confirm the point-like pinhole shunts using lock-in thermographic images. The latter revealed that the Al rear electrode induces strong ohmic shunts below the grid lines and a high density of weak non-linear shunts away from the grid lines. Two distinctly different approaches are shown to reduce the shunting problem to a negligible level: (i) to contact only a small fraction of the rear Si surface via a point contacting scheme, whereby the metal layer needs to be thin (<1 µm) and the fractional area coverage small (<5%), and (ii) to deposit line contacts in a bifacial interdigitated scheme, whereby a thick layer of metal is deposited followed by a wet-chemical etching step that effectively reduces shunting by preferentially etching away the shunting paths. Test devices with an area of 1 cm2 achieve pseudo fill factors (pFF) of above 75% and diode ideality factors of below 1·3, demonstrating that the proposed methods are well suited for the metallisation of the rear surface of EVA solar cells. Copyright © 2008 John Wiley & Sons, Ltd.

The effect of Zn1‐xMgxO buffer layer deposition temperature on Cu(In,Ga)Se2 solar cells: A study of the buffer/absorber interface

Abstract: CdS is conventionally used as a buffer layer in Cu(In,Ga)Se2, CIGS, solar cells. The aim of this thesis is to substitute CdS with cadmium-free, more transparent and environmentally benign alternative buffer layers and to analyze how the material properties of alternative layers affect the solar cell performance. The alternative buffer layers have been deposited using Atomic Layer Deposition, ALD. A theoretical explanation for the success of CdS is that its conduction band, Ec, forms a small positive offset with that of CIGS. In one of the studies in this thesis the theory is tested experimentally by changing both the Ec position of the CIGS and of Zn(O,S) buffer layers through changing their gallium and sulfur contents respectively. Surprisingly, the top performing solar cells for all gallium contents have Zn(O,S) buffer layers with the same sulfur content and properties in spite of predicted unfavorable Ec offsets. An explanation is proposed based on observed non-homogenous composition in the buffer layer. This thesis also shows that the solar cell performance is strongly related to the resistivity of alternative buffer layers made of (Zn,Mg)O. A tentative explanation is that a high resistivity reduces the influence of shunt paths at the buffer layer/absorber interface. For devices in operation however, it seems beneficial to induce persistent photoconductivity, by light soaking, which can reduce the effective Ec barrier at the interface and thereby improve the fill factor of the solar cells. Zn-Sn-O is introduced as a new buffer layer in this thesis. The initial studies show that solar cells with Zn-Sn-O buffer layers have comparable performance to the CdS reference devices. While an intrinsic ZnO layer is required for a high reproducibility and performance of solar cells with CdS buffer layers it is shown in this thesis that it can be thinned if Zn(O,S) or omitted if (Zn,Mg)O buffer layers are used instead. As a result, a top conversion efficiency of 18.1 % was achieved with an (Zn,Mg)O buffer layer, a record for a cadmium and sulfur free CIGS solar cell.