Semiconductor Science and Technology
About: Semiconductor Science and Technology is an academic journal. The journal publishes majorly in the area(s): Quantum well & Photoluminescence. It has an ISSN identifier of 0268-1242. Over the lifetime, 10136 publication(s) have been published receiving 160636 citation(s).
Topics: Quantum well, Photoluminescence, Silicon, Thin film, Heterojunction
Papers published on a yearly basis
TL;DR: The present status and prospects for further development of polycrystalline or amorphous transparent conducting oxide (TCO) semiconductors used for practical thin-film transparent electrode applications are presented in this paper.
Abstract: The present status and prospects for further development of polycrystalline or amorphous transparent conducting oxide (TCO) semiconductors used for practical thin-film transparent electrode applications are presented in this paper. The important TCO semiconductors are impurity-doped ZnO, In2O3 and SnO2 as well as multicomponent oxides consisting of combinations of ZnO, In2O3 and SnO2, including some ternary compounds existing in their systems. Development of these and other TCO semiconductors is important because the expanding need for transparent electrodes for optoelectronic device applications is jeopardizing the availability of indium-tin-oxide (ITO), whose main constituent, indium, is a very expensive and scarce material. Al- and Ga-doped ZnO (AZO and GZO) semiconductors are promising as alternatives to ITO for thin-film transparent electrode applications. In particular, AZO thin films, with a low resistivity of the order of 10−5 Ω cm and source materials that are inexpensive and non-toxic, are the best candidates. However, further development of the deposition techniques, such as magnetron sputtering or vacuum arc plasma evaporation, as well as of the targets is required to enable the preparation of AZO and GZO films on large area substrates with a high deposition rate.
TL;DR: In this article, stand-off interferometric imaging and sensing for the detection of explosives, weapons and drugs is emphasized, and future prospects of terahertz technology are discussed.
Abstract: Over the past 5 years, there has been a significant interest in employing terahertz (THz) technology, spectroscopy and imaging for security applications. There are three prime motivations for this interest: (a) THz radiation can detect concealed weapons since many non-metallic, non-polar materials are transparent to THz radiation; (b) target compounds such as explosives and illicit drugs have characteristic THz spectra that can be used to identify these compounds and (c) THz radiation poses no health risk for scanning of people. In this paper, stand-off interferometric imaging and sensing for the detection of explosives, weapons and drugs is emphasized. Future prospects of THz technology are discussed.
TL;DR: In this paper, a general review of the advances in widebandgap semiconductor photodetectors is presented, including SiC, diamond, III-nitrides and ZnS.
Abstract: Industries such as the automotive, aerospace or military, as well as environmental and biological research have promoted the development of ultraviolet (UV) photodetectors capable of operating at high temperatures and in hostile environments. UV-enhanced Si photodiodes are hence giving way to a new generation of UV detectors fabricated from wide-bandgap semiconductors, such as SiC, diamond, III-nitrides, ZnS, ZnO, or ZnSe. This paper provides a general review of latest progresses in wide-bandgap semiconductor photodetectors.
TL;DR: In this article, the theoretical background of Raman spectroscopy, with special attention to its sensitivity for mechanical stress, is discussed, and practical information is given for the application of this technique to stress measurements in silicon integrated circuits.
Abstract: Local mechanical stress is currently an important topic of concern in microelectronics processing. A technique that has become increasingly popular for local mechanical stress measurements is micro-Raman spectroscopy. In this paper, the theoretical background of Raman spectroscopy, with special attention to its sensitivity for mechanical stress, is discussed, and practical information is given for the application of this technique to stress measurements in silicon integrated circuits. An overview is given of some important applications of the technique, illustrated with examples from the literature: the first studies of the influence of external stress on the Si Raman modes are reviewed; the application of this technique to measure stress in silicon-on-insulator films is discussed; results of measurements of local stress in isolation structures and trenches are reviewed; and the use of micro-Raman spectroscopy to obtain more information on stress in metals, by measuring the stress in the surrounding Si substrate is explained.
TL;DR: A review of current research activities on ZnO nanorods (or nanowires) can be found in this paper, where a wide range of interesting properties such as luminescence, field emission, gas sensing and electron transport, as well as various intriguing applications are discussed.
Abstract: This paper presents a review of current research activities on ZnO nanorods (or nanowires). We begin this paper with a variety of physical and chemical methods that have been used to synthesize ZnO nanorods (or nanowires). There follows a discussion of techniques for fabricating aligned arrays, heterostructures and doping of ZnO nanorods. At the end of this paper, we discuss a wide range of interesting properties such as luminescence, field emission, gas sensing and electron transport, associated with ZnO nanorods, as well as various intriguing applications. We conclude with personal remarks on the outlook for research on ZnO nanorods.
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