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JournalISSN: 0925-4005

Sensors and Actuators B-chemical 

Elsevier BV
About: Sensors and Actuators B-chemical is an academic journal published by Elsevier BV. The journal publishes majorly in the area(s): Chemistry & Biosensor. It has an ISSN identifier of 0925-4005. Over the lifetime, 29294 publications have been published receiving 1202702 citations. The journal is also known as: Sensors and actuators B.


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Journal ArticleDOI
TL;DR: Main application areas are outlined and examples of applications of SPR sensor technology are presented and future prospects of SPR technology are discussed.
Abstract: Since the first application of the surface plasmon resonance (SPR) phenomenon for sensing almost two decades ago, this method has made great strides both in terms of instrumentation development and applications. SPR sensor technology has been commercialized and SPR biosensors have become a central tool for characterizing and quantifying biomolecular interactions. This paper attempts to review the major developments in SPR technology. Main application areas are outlined and examples of applications of SPR sensor technology are presented. Future prospects of SPR sensor technology are discussed.

5,127 citations

Journal ArticleDOI
Andreas Manz1, N. Graber1, H.M. Widmer1
TL;DR: In this paper, a modular construction of a miniaturized "total chemical analysis system" is proposed, and theoretical performances of such systems based on flow injection analysis, chromatography and electrophoresis are compared with those of existing chemical sensors and analysis systems.
Abstract: Following the trend towards smaller channel inner diameter for better separation performance and shorter channel length for shorter transport time, a modular construction of a miniaturized 'total chemical analysis system' is proposed. The theoretical performances of such systems based on flow injection analysis, chromatography and electrophoresis, are compared with those of existing chemical sensors and analysis systems.

3,017 citations

Journal ArticleDOI
TL;DR: In this article, high performance gas sensors prepared using p-type oxide semiconductors such as NiO, CuO, Cr2O3, Co3O4, and Mn3O3 were reviewed.
Abstract: High-performance gas sensors prepared using p-type oxide semiconductors such as NiO, CuO, Cr2O3, Co3O4, and Mn3O4 were reviewed. The ionized adsorption of oxygen on p-type oxide semiconductors leads to the formation of hole-accumulation layers (HALs), and conduction occurs mainly along the near-surface HAL. Thus, the chemoresistive variations of undoped p-type oxide semiconductors are lower than those induced at the electron-depletion layers of n-type oxide semiconductors. However, highly sensitive and selective p-type oxide-semiconductor-based gas sensors can be designed either by controlling the carrier concentration through aliovalent doping or by promoting the sensing reaction of a specific gas through doping/loading the sensor material with oxide or noble metal catalysts. The junction between p- and n-type oxide semiconductors fabricated with different contact configurations can provide new strategies for designing gas sensors. p-Type oxide semiconductors with distinctive surface reactivity and oxygen adsorption are also advantageous for enhancing gas selectivity, decreasing the humidity dependence of sensor signals to negligible levels, and improving recovery speed. Accordingly, p-type oxide semiconductors are excellent materials not only for fabricating highly sensitive and selective gas sensors but also valuable additives that provide new functionality in gas sensors, which will enable the development of high-performance gas sensors.

1,642 citations

Journal ArticleDOI
Noboru Yamazoe1
TL;DR: In this paper, the authors demonstrated that the sensing characteristics of a semiconductor gas sensor using SnO2 can be improved by controlling fundamental factors which affect its receptor and transducer functions.
Abstract: It is demonstrated that the sensing characteristics of a semiconductor gas sensor using SnO2 can be improved by controlling fundamental factors which affect its receptor and transducer functions. The transducer function is deeply related with the microstructure of the elements, i.e., the grain size of SnO2 (D) and the depth of the surface space-charge layer (L). The sensitivity is drastically promoted when D is made comparable to or less than 2L, either by control of D for pure SnO2 elements or by control of the Debye length for impurity-doped elements. On the other hand, the receptor function is drastically modified by the introduction of foreign receptors on the surface of SnO2. In the particular cases of Pd and Ag promoters, the oxides (PdO and Ag2O) formed in air interact with the SnO2 surface to produce an electron-deficient space-charge layer, and this contributes much to promoting the gas sensitivity. For a test gas having a specific reactivity, such specificity can be utilized for exploiting gas-selective receptors, as exemplified by CuOSnO2 and La2O3SnO2 elements, which detect H2S and ethanol gas respectively very sensitively.

1,534 citations

Journal ArticleDOI
TL;DR: In this paper, the development of ISFETs in an historical setting, but not limited to that, is described, based on the development regarding the theory, the technology, the instrumentation and the experience with many specific applications, also future projects are defined, such as concerning cell acidification, this paperET biasing and a complete new range of FET sensors based on local pressure induction by (bio)chemical interaction with immobilised charged molecules (hydrogels).
Abstract: This paper describes the development of ISFETs in an historical setting, but is not limited to that. Based on the development regarding the theory, the technology, the instrumentation and the experience with many specific applications, also future projects are defined, such as concerning cell acidification, REFET biasing and a complete new range of FET sensors based on local pressure induction by (bio)chemical interaction with immobilised charged molecules (hydrogels). Also the present patent and market position is discussed. It is concluded that in the past 30 years the ISFET research and development made continuous progress on a regular base, but the practical applications stayed behind, especially concerning the dynamic use of ISFETs in combination with an integrated pH actuator. The newly proposed research projects may be good for an other 30 years.

1,472 citations

Performance
Metrics
No. of papers from the Journal in previous years
YearPapers
2023677
20221,548
20211,862
20201,453
20191,707
20182,632