Solar Energy Materials 

About: Solar Energy Materials is an academic journal. The journal publishes majorly in the area(s): Thin film & Selective surface. It has an ISSN identifier of 0165-1633. Over the lifetime, 945 publications have been published receiving 22922 citations.

Electrochromic materials and devices for energy-efficient windows

Abstract: Numerous inorganic and organic electrochromic materials are discussed in the context of developing a film-based optical shutter for a window application. It is possible electronically to alter a window's transmission and reflection properties by use of electrochromic thin films. This allows regulation of conductive and radiative heat transfer rates, with variable optical attenuation. As a result, an aperture can be optically and thermally managed, reducing space heating and cooling loads. The properties of transition metal oxides, such as WO 3 , MoO 3 , Ir 2 O 3 and V 2 O 5 are detailed. Organic systems such as heptyl viologen and polytungsten anion are reviewed. Also, intercalated structures are discussed. Various designs of working devices are outlined with emphasis on solid-state configurations. From this quantification, materials and devices with appropriate deposition techniques for window applications are detailed.

Optical properties of soda lime silica glasses

Abstract: A comprehensive set of optical constants and a partial set of bulk optical properties are listed for clear, absorbing, and low-iron glasses used for windows. The measurements extend from the near ultraviolet to the far infrared, covering the range of interest for calculating solar and thermal radiative transfer through windows. This information is also needed to calculate the properties of thin-film coatings on glass substrates. Large variations in solar absorption are observed among these glasses, whereas the far-infrared properties are almost constant for all glass types. An important quantity, the hemispherical total emissivity, is 0.837 at 20°C, as determined from reflectance data measured with an IBM Fourier-transform spectrometer. Solar properties are determined from conventional transmission and reflection measurements.

Density of the gap states in undoped and doped glow discharge a-Si:H

Abstract: The density of the gap states in undoped and phosphorus and antimony doped a-Si:H has been determined from the absorption coefficient measurement. A constant photocurrent method was used to determine the value of optical absorption in the low absorption region. A quantitative model has been suggested to explain all experimental data. The model is based on a Gaussian shaped maximum, connected with the dangling bond, within the exponential band tails just below the middle of the gap. Moderate and strong coping rises the concentration of dangling bonds.

Heat mirror coatings for energy conserving windows

Abstract: Heat-mirror coatings are important as transparent insulation for a host of applications, including building window glazings. They reduce thermal emittance of glass and polymeric substrates, thereby decreasing the effective radiative loss of a glazing or window assembly. Properties of coatings and substrates, as well as various window designs, are detailed. The paper reviews heat-mirror deposition technology including chemical vapor deposition using hydrolysis and pyrolysis reactions, dc and rf sputtering using reactive, biased and nonreactive techniques, vapor deposition and ion plating. The properties of single-layer films including coatings of In 2 O 3 :Sn, doped SnO 2 , Cd 2 SnO 4 , noble and transition metal films are enumerated. Multilayer films described include dielectric overcoated metals such as ZnS/metal/ZnS, Bi 2 O 3 /Au/Bi 2 O 3 and TiO 2 /Ag/TiO 2 . Electrical, solar and infrared radiative properties are tabulated. Much of the data presented is also useful for photovoltaic and collector applications. New and innovative materials systems are suggested.

Characterized of glow-discharge deposited a-Si:H

Abstract: The study of hydrogenated amorphous silicon, a-Si:H has become an active and large subfield of growing interest in noncrystalline semiconductors. This paper reviews recent successes as well as difficulties encountered in interpreting some fundamental physical properties of a-Si:H prepared by glow-discharge deposition. This material appears to contain structural and compositional heterogeneities which depend on the preparation conditions and affect its mechanical and electronic properties. These are related to the concentration and bonding configurations of hydrogen. Determinations of the density and distribution of localized gap states by means of field effect and capacitance measurements are discussed as well as evidence for and against the presence of surface states. Optical absorption near the absorption edge is described as are conductivity measurements. The latter reveal many interesting puzzles. Staebler and Wronski discovered that the dark conductivity and the photoconductivity can be changed significantly by strong exposure to light. Moreover, space charge layers adjacent to the substrate interface and near the free surface can strongly influence the electronic properties of a-Si:H films, especially those having low densities of gap states. The pre-exponential factor of the conductivity increases with its activation energy in accordance with the Meyer-Neldel rule regardless of whether the changes in dark conductivity are produced by doping, light exposure or space charge layers. Attempts are made to identify causes for the scatter of data on some film properties reported by various laboratories. Our present understanding of the recombination processes involved in photoluminescence and photoconductivity is presented. We conclude that a-Si:H films of superior quality can be expected when the preparation conditions become more fully understood.