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JournalISSN: 0038-1101

Solid-state Electronics 

Elsevier BV
About: Solid-state Electronics is an academic journal published by Elsevier BV. The journal publishes majorly in the area(s): Diode & Silicon. It has an ISSN identifier of 0038-1101. Over the lifetime, 13973 publications have been published receiving 259696 citations.


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Journal ArticleDOI
TL;DR: In this article, the M-O-S diode was introduced, and a theory for its operation in the absence of surface states was obtained, and it was shown that surface states with non-zero relaxation times may increase the capacitance of the device, as well as affect the proportion of applied voltage which appears across the silicon.
Abstract: A new solid-state device, the M-O-S diode, of which an oxidized silicon surface is an integral part, is introduced, and a theory for its operation in the absence of surface states is obtained. The capacitance of this device may be considerably more voltage sensitive than that of a p-n junction. The existence of surface states with non-zero relaxation times is introduced into the theoretical model. It is shown that the states may increase the capacitance of the device, as well as affect the proportion of applied voltage which appears across the silicon. A small-signal equivalent circuit is derived which includes the effect of the surface states. It is also shown that a comparison of the theoretical capacitance vs. voltage curve without states and a measured high-frequency capacitance vs. voltage curve may be used to obtain the distribution of all states, regardless of their time constants. Results are given of measurements and calculations on two M-O-S diodes having different surface treatments before oxidation. Both surfaces have a total density of about 3 × 10 12 states/cm 2 . In both cases, the distribution of states is continuous and has its highest peak about 100 mV above E F (0), the position of the Fermi level at the silicon surface if there is no voltage drop across the silicon The time constants of the states extend from 10 −8 sec to longer than 10 −2 sec. There is a tendency for states located at deeper energy levels to have longer time constants, but some of the states in the high density of states above E F (0) have long time constants. The distribution of time constants with energy level is somewhat different for the two surfaces. A comparison is made between the distribution of states obtained here with the distribution reported by others working in the field. The results are similar in density and location of the peaks of the distribution reported here, but differ in that some other sources report a discrete distribution.

1,331 citations

Journal ArticleDOI
TL;DR: In this article, the authors derived voltage-current characteristics for field and T-F emission in the forward and reverse regime of Schottky barriers formed on highly doped semiconductors.
Abstract: Field emission and thermionic-field (T-F) emission are considered as the phenomena responsible for the excess currents observed both in the forward and reverse directions of Schottky barriers formed on highly doped semiconductors. Voltage-current characteristics are derived for field and thermionic-field emission in the forward and reverse regime. The temperatures and voltages where these phenomena are predominent for a given diode are discussed. Comparison with experimental results on GaAs and Si diodes shows good agreement between theory and experiments.

1,268 citations

Journal ArticleDOI
TL;DR: In this article, the status of SiC in terms of bulk crystal growth, unit device fabrication processes, device performance, circuits and sensors is discussed, focusing on demonstrated high-temperature applications, such as power transistors and rectifiers, turbine engine combustion monitoring, temperature sensors, analog and digital circuitry, flame detectors, and accelerometers.
Abstract: Silicon carbide (SiC), a material long known with potential for high-temperature, high-power, high-frequency, and radiation hardened applications, has emerged as the most mature of the wide-bandgap (2.0 eV ≲ Eg ≲ 7.0 eV) semiconductors since the release of commercial 6HSiC bulk substrates in 1991 and 4HSiC substrates in 1994. Following a brief introduction to SiC material properties, the status of SiC in terms of bulk crystal growth, unit device fabrication processes, device performance, circuits and sensors is discussed. Emphasis is placed upon demonstrated high-temperature applications, such as power transistors and rectifiers, turbine engine combustion monitoring, temperature sensors, analog and digital circuitry, flame detectors, and accelerometers. While individual device performances have been impressive (e.g. 4HSiC MESFETs with fmax of 42 GHz and over 2.8 W mm−1 power density; 4HSiC static induction transistors with 225 W power output at 600 MHz, 47% power added efficiency (PAE), and 200 V forward blocking voltage), material defects in SiC, in particular micropipe defects, remain the primary impediment to wide-spread application in commercial markets. Micropipe defect densities have been reduced from near the 1000 cm−2 order of magnitude in 1992 to 3.5 cm−2 at the research level in 1995.

1,249 citations

Journal ArticleDOI
TL;DR: In this article, the present knowledge of charge transport properties in silicon, with special emphasis on their application in the design of solid-state devices, is reviewed, and most attention is devoted to experimental findings in the temperature range around 300 K and to high-field properties.
Abstract: This paper reviews the present knowledge of charge transport properties in silicon, with special emphasis on their application in the design of solid-state devices. Therefore, most attention is devoted to experimental findings in the temperature range around 300 K and to high-field properties. Phenomenological expressions are given, when possible, for the most important transport quantities as functions of temperature, field or impurity concentration. The discussion is limited to bulk properties, with only a few comments on surface transport.

1,067 citations

Journal ArticleDOI
R.L. Anderson1
TL;DR: In this article, the electrical characteristics of Ge-GaAs heterojunctions, made by depositing Ge epitaxially on GaAs substrates, are described and I-V and electro-optical characteristics are consistent with a model in which the conduction-and valence-band edges at the interface are discontinuous.
Abstract: The electrical characteristics of Ge-GaAs heterojunctions, made by depositing Ge epitaxially on GaAs substrates, are described. I–V and electro-optical characteristics are consistent with a model in which the conduction- and valence-band edges at the interface are discontinuous. The forbidden band in heavily doped (n-type) germanium appears to shift to lower energy values.

970 citations

Performance
Metrics
No. of papers from the Journal in previous years
YearPapers
202392
2022257
2021185
2020160
2019162
2018118