Showing papers in "Thin Solid Films in 1972"

TL;DR: In this paper, the growth modes occurring in epitaxy are illustrated by comparing the growth of Au and Ag on a variety of substrates ranging from ionic to homopolar to metallic crystals.

TL;DR: In this article, the electrical conductivity of discontinuous thin metal films is assumed to be by a substrate-assisted tunnelling, and it is shown that electrons are emitted from small islands in the cathode region where the main voltage drop occurs.

TL;DR: In this paper, the intrinsic stress in thin polycrystalline nickel films vapor-deposited onto polished silicon substrates was measured by viewing the substrate deflection using an optical interference method.

TL;DR: In this article, the profile of evaporated polycrystalline and amorphous films of various materials has been investigated as a function of condensation conditions: angle of vapour incidence, substrate temperature and residual gas pressure.

TL;DR: In this article, a review of the literature on film stress and its relationship with film thickness is given, and a Vickers type ultra-microhardness tester for thin films is described.

TL;DR: In this article, the microstructure of MgF 2, cryolite and ZnS films has been investigated and the packing density, the crystal radius and the inner surface of these films have been calculated.

TL;DR: In this article, it is known that the optical properties of dielectric quarter-wave multilayers are stationary in relation to the thickness of each layer, and this property is particularly interesting for the purpose of controlling the production of such stacks.

TL;DR: In this paper, a discussion of the effects of variations on the modified Debye-Scherrer X-ray diffraction patterns is given, and the diffraction pattern from the commonly observed (200) β-Ta and (110) and (111) b.c.c.-Ta preferred orientations are illustrated.

TL;DR: In this article, the decomposition of tetra-ethoxy silane in a radio frequency (1 MHz) glow discharge was studied as a function of time, total pressure, nature of background gas, partial pressure, substrate temperature, subtrate position.

TL;DR: Second phase Al 2 Cu particles were found to have a considerable effect in retarding secondary growth as discussed by the authors, presumably by rearrangement of misfit dislocations, only when Cu was introduced as a layer sandwiched between two equal Al layers.

TL;DR: In this article, the state of the art for these applications and materials development needed for further progress are reviewed, with emphasis on preparative problems, optimization of film structure and of electrical properties and application in devices.

TL;DR: In this paper, it was shown that the processus de formation d'une epitaxie (Al ou Au sur (100) KCl)n't pas en liaison avec le processus of nucleation heterogene.

TL;DR: The low energy tail of the absorption edge of amorphous films of Ge, GeTe, As2Se3, Se and Se doped with 1 −5 wt. % As, and melt-quenched platelets of Se and doped Se has been found to vary exponentially with photon energy in a manner similar to the Urbach rule observed in various ionic compounds and crystalline semiconductors as mentioned in this paper.

TL;DR: In this article, the structure, resistivity ρ and temperature coefficient of resistance TCR of films sputtered in pure argon or reactively in Ar-O2 or Ar-N2 have been determined.

TL;DR: In this article, the properties of these materials were examined for the range of film thicknesses that yield very high optical transparency and moderately high electrical conductivity, and the preferred system for high transmission applications is SnO2:Sb, which was found to be useful, stable and reproducible in thicknesses as small as 50 A.

TL;DR: In this paper, a linear relation was found between the electron mobility and the mean crystallite size, and a positive gate field was applied orthogonally to the film, which increased the particle mobility by a factor of 30 at 77°K.

TL;DR: In this paper, the electrical resistivity and resistance-temperature characteristics of titanium films, measured in vacuum, were described. But the measured resistivities for the continuous freshly prepared films are too high to be explained on the basis of the Fuchs-Sondheimer theory1, 2 for diffuse scattering, and are attributed to porosity and the gaseous impurities taken down during and after their formation.

TL;DR: In this paper, the thermoelectric power, resistivity and TCR of vacuum evaporated copper films were measured and the energy dependence of the electron mean free path and the area of the constant energy surface were obtained as 0.7 and -2.1 respectively.

TL;DR: In this paper, a comparison between experimental and theoretical results for the variation of the work function and Fermi energy is presented and is found to be quite satisfactory, it can be shown that these parameters strongly influence the energy distribution of secondary electrons in the low energy range (0 eV ≦ E ′≲10 eV).

TL;DR: The voltage threshold for the appearance of E.L. in TaTa 2 O 5 ǫ-Au diodes is 1.2 V, for Al 2 O 3, Al 2 o 3 ǔ, and Ta 2 o 5 Ãǫ -Au Diodes are 1.9 V and 2.4 V, respectively.

TL;DR: In this article, the formation of second phase particles in Al+3% Cu alloy films was examined in order to find differences of the precipitation in thin films from that occurring in bulk alloys.

TL;DR: In this article, the authors studied the resistivity properties of bcc-tantalum films obtained from various bell jar systems in Bell Telephone Laboratories and found that the presence of the material causes an increasing positive α value at low temperatures.

TL;DR: In this article, the electrical properties of sandwich cathodes with different Al 2 O 3 structures have been investigated and the main features of this cold emitter are a special multilayer structure of the Al 2O 3 insulator and a discontinuous upper Au electrode.

TL;DR: In this paper, the quantum size effect on thin-film physics is studied and the theory of this effect based on quantization of the component of the carrier momentum normal to the film plane is discussed.

TL;DR: In this paper, the electrical polarization which occurs during condensation of gases with a dipole moment was investigated for eight gases at condensatiom temperatures between 3 and 100 K. The sign and the value of the polarization depends on the condensation temperature.

TL;DR: In this paper, the optical absorption of CdS thin films was measured on a number of sanples deposited under controlled conditions, and a good agreement was obtained between the experimental results and the predictions of a model based on the Franz-Keldysh effect.

TL;DR: In this paper, the importance of an electrostatic contribution to the adhesion of metallic thin films to insulating substrates has been investigated, and a model is proposed for the mechanism of charge transfer during formation and separation of the interface.