Showing papers in "Thin Solid Films in 1973"

TL;DR: In this paper, a collimated mono-energetic and mono-atomic beam incident on a target provides information on its structure and composition when the energy of the back-scattered beam atoms, or of the particles generated by nuclear reactions, is analyzed.

TL;DR: In this paper, the properties of ZnS film capacitors were studied at different temperatures (78 to 380 K) and frequencies (102 to 105 Hz) and the dielectric constant was found to be independent of frequency and film thickness (>900 A).

TL;DR: In this article, a model for reactive sputtering of a metal in an oxygen-containing glow discharge was presented for spontaneous oxide formation on the target surface and a sharp decrease of the sputtering rate can occur at a definite oxygen partial pressure p ∗ in the plasma.

TL;DR: In this paper, the authors describe a diffusion-controlled growth of Pd2Si on amorphous Si substrates with a t 0.5 dependence on the substrate orientation.

TL;DR: The role of the substrate surface in the formation of either β- or b.c.-Ta, deposited by d.c. and r.f. diode sputtering, was studied in this article.

TL;DR: In this article, the authors reviewed the factors affecting adhesion and showed that the structure of the interfacial region is probably a controlling factor in film adhesion, and the adhesion stability of a metallization system may be determined by processing and service requirements.

TL;DR: In this article, the influence of the deposition conditions on the structure of chemically deposited polycrystalline-silicon films has been examined, and it was shown that the grain size increases with increasing film thickness and deposition temperature, ranging from less than 0.05 microm to more than 1 microm.

TL;DR: In this article, a simple equation for the anisotropic dielectric constant of a metal island film is derived and applied to the ellipsometric measurement for an aggregated silver film.

TL;DR: In this article, an analysis of nucleation and growth phenomena in vapor deposition is developed to explain experimental observations of deposits of silver and palladium on amorphous carbon substrates, and nucleation occurs at active sites by incident atoms which must strike within a very few atomic radii of the site.

TL;DR: In this paper, the dependence of the kinetics of growth of polyvinylchloride (PVC) films on the concentration and temperature of the solution and the nature of the solvent and substrate has been studied.

TL;DR: In this article, it was shown that the tin environment is substantially different from the indium environment, namely In 2 O 3, the environment of the tin is changed towards lower binding energies than the SnO 2 starting material.

TL;DR: In this paper, strong interferences have been obtained upon specular reflection of monochromatic X-rays at thin films of amorphous silicon on sapphire substrates under glancing angles slightly above the critical angle for total reflection.

TL;DR: In this paper, the application of r.f. sputtering to plastic as a means of obtaining thinner dielectric layers with good electrical properties for use in the capacitor industry is outlined.

TL;DR: In this article, the atomistic nucleation theory has been extended and generalized, and a new criterion has been proposed for a comparison of the theory with experimental results, including the data of Walton, Rhodin and Rollins.

TL;DR: In this article, an exact expression for the dependence of the temperature coefficient of resistivity (t.c.r.) on film thickness is derived, in order to allow a quick comparison of experimental data with the model.

TL;DR: In this paper, the authors derived an equation which governs the energy spectrum of ions backscattered from a target whose composition varies continuously with depth, including the effects of path length straggling on energy spectrum through integrations over the depth distributions of both the incident and back-scattered ions.

TL;DR: In this paper, the energy distributions of energetic light ions backscattered from solids can be used to determine the electronic stopping power of these ions in the solid, and the results depend strongly on the cleanliness of the surface region.

TL;DR: In this article, two techniques have been developed to determine experimentally the thermal conductivity of thin solid films of thickness 500 A or more at low and high temperatures at both room temperature and high temperature.

TL;DR: In this paper, it was shown that the minimum yields of polycrystalline Pd2Si films depend on the spread in orientation, and that the spread is of the order of the critical angle for channeling.

TL;DR: In this article, the authors show that lattice diffusion is the dominant transport process in these conductors with activation energies of 1.22 eV and 1.20 eV for Al transport and Cu transport, respectively.

TL;DR: In this paper, anodic oxide films on GaAs have been studied by the combined use of He back-scattering and He-induced X-rays and the results show that the films are deficient in As within 200 A of the surface and have a Ga:As ratio of approximately 1:1 for the rest of the oxide.

TL;DR: In this paper, thin films of CdSx Te1−x have been prepared by electron-beam evaporation throughout the composition range, and optical energy gaps have been measured, and observed variation of energy gap with composition is compared with previous results and with theoretical prediction.

TL;DR: In this article, the authors proposed a method to determine the composition of the outermost atomic layer of a solid, regardless of its conductivity, using the energy spectra characteristics of the masses of the scattering centers.

TL;DR: In this paper, the authors demonstrate the significance of the analytical capabilities of AES in the qualitative and quantitative analysis of thin film electronic materials used in the fabrication of precision thin film resistors, capacitors and conductors.

TL;DR: In this article, it was shown that at an oxygen partial pressure of 1 x 10-6 torr the TCR became negative and that the films had a structure corresponding to a distorted b.c. Cr lattice, which did not change even after annealing for several hours at 300 °C.

TL;DR: In this article, a line-shape extraction technique was developed and applied to find the number of Si atoms and O atoms per square centimeter of anodically grown and thermally oxidized silicon oxide layers.

TL;DR: In this paper, a 150 A.D. microscopie et diffraction electroniques des films minces discontinus d'or condenses sur un clivage de NaCl and nous determinons experimentalement the structure des particules d'Or don't le diametre est inferieur ou egal a 150 a.d. Nous considerons un modele en accord avec les travaux anterieurs portant sur la stabilite des phases de petites dimensions.

TL;DR: In this paper, the temperature dependent photoconductive and surface barrier photovoltaic spectral responses of InAs0.07Sb0.93 films with an impurity density ∼5.5×1015 cm-3, grown by liquid phase microzone crystallization, are shown to be a function of their fundamental energy bandgaps shifted to values lower than those of InSb.

TL;DR: Des couches minces de In2O3: Sn sont obtenues au moyen d'une decharge induite dans une cavite fabriquee dans un melange de In 2O3 and de SnO2.

TL;DR: A comparison of the microanalytical techniques for measurement of concentration profiles (0.01 to 10 μm) that have been presented at the International Conference on Ion Beam Surface Layer Analysis is given in this article.