Showing papers in "Thin Solid Films in 1976"

TL;DR: In this article, a simple theoretical model and experimental observations made on deposits of Ga(As, P) on GaAs, suggest that it is desirable for the film thickness to be small.

TL;DR: In this paper, the authors used the Hall effect and resistivity measurements on GaAs to determine the concentrations of donors and acceptors in semiconductor samples from a single measurement of the Hall coefficient at 77 K.

TL;DR: In this article, the authors investigate the rate of silicide formation and the composition of the resulting compound when thin Ni films vacuum deposited onto various substrates are annealed from 200 °C to 325 °C and from 1 2 to 24 h.

TL;DR: Hard surface layers with a Vickers hardness of greater than 2000 have been deposited on titanium alloys, Nimonic, high tensile steel and stainless steels by cracking ethylene in a glow discharge as mentioned in this paper.

TL;DR: In this paper, the main features of a passive thin-film display cell based on the electrochemically reversible formation of a tungsten bronze according to the reaction are considered, where a critical requirement of these cells is that Dτ(qCm/Q)2 ≈ 1, where the symbols are, in order, the M+ diffusion coefficient, the required device response time, the electronic charge, the maximum practical volume concentration of M in the WO3 film and lastly the area colouring charge.

TL;DR: In this paper, it was shown that properly corrugated films exhibit a negative mass effect and consequently a negative differential resistance in a similar way to the superlattice device of Esaki and Tsu4.

TL;DR: In this paper, defect-enhanced diffusion coefficients were calculated for the Pd/Au thin film system at temperatures in the range 175°-300°C using electrical and compositional profiling methods.

TL;DR: In this article, a model for the growth of thermal oxides on the III-V compound semiconductors is proposed, based on the diffusion rates of the elements, the mutual solubilities of the mixed oxides and the thermodynamic stabilities of the oxides are important factors in oxide growth.

TL;DR: In this article, the optical performance of thin semiconductor films deposited from the vapor phase was evaluated for photothermal converters at temperatures of 500°C, and the results showed that they are suitable for applications with a spectral profile that matches the solar emission and thermal reradiation properties.

TL;DR: In this paper, the results on thin film interdiffusion of Au and In at room temperature were presented and the intermetallic compounds AuIn2, AuIn, Au7In3 and Au4In were formed.

TL;DR: In this article, the growth mode and orientation at room temperature of Ag and Au deposits on the cleavage faces of Si and Ge were studied and two-dimensional epitaxial layers were formed.

TL;DR: In this article, the authors describe the deposition of cubic and 6 H silicon carbide onto 6 H substrates, and the influence of the deposition parameters (e.g. temperature, gas composition and flow rate) are discussed.

TL;DR: In this paper, a preliminary study of silicide formation in the Ti-Si system at temperatures below 700 °C, with some remarks about the sequential growth and the intermediate phase of silicides 3.

TL;DR: In this paper, the authors present a review of nine major methods available today for the determination of surface and thin film composition, placing particular emphasis on basic principles and up-to-date instrumentation.

TL;DR: In this paper, a review of the most important bulk and interfacial responses is given, in particular the dipolar and hopping charge contributions and the effects of depletion and injection barriers, with examples from a range of measurements on SiO, chalcogenide films, stearic acid, electrolytic capacitors and ceramics.

TL;DR: In this article, the authors focus on the practical aspects of the etching of GaAs substrates, including procedures for the preparation of polished substrates and for the revelation of defects by selective attack.

TL;DR: The best optical performance achieved with a paint coating was α = 0.30 as mentioned in this paper, while the best optical properties of a plated coating were achieved by black nickel, black chrome, and black iron.

TL;DR: In this article, a technique used to sputter optical quality single-crystal ZnO on (0001)- and (1102)-oriented sapphire substrates is described and the best films were measured to have about 2 dB cm-1 attenuation for 0.6328 μm light with no post-deposition treatment of the film.

TL;DR: In this paper, an investigation of CuInS 2, CuInSe 2 and CuInTe 2 thin films by X-ray and electron microscopy analyses is presented, and the chalcopyrite structure of these films is discussed.

TL;DR: In this paper, the influence of film thickness, electron and ion beam energies, ion beam current density and initial surface roughness on depth resolution was investigated, showing that the width of the transition region increases with the square root of the product of ion beam energy and film thickness.

TL;DR: In this paper, the authors studied the growth mode of Ag and Au on the cleavage faces of Si and Ge and the surface superstructures induced by these deposits, and defined the domain of existence of each superstructure as a function of coverage ratio and temperature.

TL;DR: The mechanism of film formation and the properties of films deposited by the ionized-cluster beam technique were investigated in this article, where strong adhesion of the film to the substrate and good crystalline deposition are expected.

TL;DR: In this paper, a technique for examining moisture adsorption in narrow band filters is described, which involves the photographing of the filter in monochromatic light and the analysis of the patterns obtained.

TL;DR: In this article, a chalcogenide glass of a weakly frequency-dependent electrical conductivity obeying the usual empirical relation σ' (ω) ∝ωn but with a much lower than normal value of the exponent n, in the range 0.1-0.25 instead of 0.6-1.0.