Showing papers in "Thin Solid Films in 1979"

TL;DR: In this article, the optical effective mass of tin-doped In 2 O 3 films prepared by r.f. reactive sputtering has been determined from measurements of the plasma resonance frequency in the near-infrared region and the refractive index in the visible region.

TL;DR: In this article, it was shown that the presence of entrapped argon does not cause compressive stresses in thin thin films, and that the estimated magnitudes of the corresponding compressive strains remain invariant over large changes in the argon content.

TL;DR: In this article, the properties of phase composition, resistivity and optical constants were investigated and the phases Cu+Cu2O, Cu2O+Cu+CuO, etc.

TL;DR: In this paper, the authors described experiments on the coating of germanium targets on a water-cooled electrode in a butane r.f. plasma (13.56 MHz) with the electrode capacitively coupled to the supply to provide a negative bias to enhance ion impact.

TL;DR: In this paper, the inhomogeneity of the refractive index in optical thin films has been related directly to the physical structure of the layers and especially to the form of their columnar grains.

TL;DR: The optical constants of amorphous thin films of Sb2S3 prepared by vacuum evaporation were determined by means of transmission electron microscopy as discussed by the authors, and the optical constants in the amorphized films are rather structureless but on crystallization several structures are observed in e2 at energies of 1.88, 2.48, 3.86 and 5.25 eV.

TL;DR: In this paper, a model for the band structure of CuGaTe2 near the point Γ of the Brillouin zone was proposed and three transverse optical mode frequencies were obtained from an analysis of the optical transmission spectra in the photon energy range from 1 to about 3 eV.

TL;DR: In this article, a brief survey of the operating parameters using one or several beam bundles of ions or neutrals is given, and some results and problems are discussed in connection with the following processes: (1) nitriding of iron by low energy ion bombardment; (2) dual beam synthesis of silicon nitride and of hard carbon; (3) preparation of chromium-carbon and hard carbon layers by ion beam plating from organic vapours.

TL;DR: A review of the current status of friction and wear testing with ion-implanted metals, mostly centred on ferrous materials, can be found in this article, where the changes in coefficients of friction measured under low speed conditions are ascribed to the modification of oxidation properties and to decohesion below the implanted layer due to implantation-induced damage.

TL;DR: In this article, six-cycle-Hz films have been prepared at 200°C by reactive plasma deposition from SiH4 and CH4 diluted in helium in a tubular reactor.

TL;DR: In this paper, the authors studied the behavior of the stresses in Niobium films and found that the stress is determined mainly by the microstructure and the energetic particle bombardment.

TL;DR: Ion bombardment sputtering is widely used in combination with various analytical approaches to determine the elemental composition of thin solid layers as a function of depth as discussed by the authors, and it is generally recognized that the sputter-etching process can seriously influence the nature of experimentally determined composition depth profiles.

TL;DR: Diamond-like carbon films produced in an r.f. butane plasma were characterized by X-ray photo-emission analysis of the deposits as discussed by the authors, and it was confirmed that films produced at low deposition rates were more diamond-like than those produced at high deposition rates.

TL;DR: In this paper, a spray pyrolysis-based polycrystalline sphalerite structure solid solution is indicated for the entire four-component system, which suggests the possibility of tailoring properties such as lattice parameter, energy gap and conductivity type to produce heterojunctions suitable for low-cost solar cells by spray pyrogeneration.

TL;DR: In this paper, a thin film photovoltaic cell of CdS/Cu 2 S was designed and fabricated to achieve high energy conversion efficiency of 14-15% using a (CdZn)S/cu 2 S junction.

TL;DR: In this paper, a low pressure (0.2 Torr) r discharge in SiH 4 -He has been studied and the measured mass transport rate towards the wall is compared with the transport rate derived from a simplified mono-dimensional kinetic model.

TL;DR: In this paper, the authors used photoemission with synchrotron radiation (8 eV < hv < 300 eV) to investigate chemisorption and the formation of thin oxide layers on GaAs and preliminary correlations with thick oxides are made.

TL;DR: In this paper, a model is proposed to express the resistivity of metal films in which two electron scattering mechanisms operate simultaneously: an isotropic background scattering and a scattering caused by three distributions of planar potentials which represent the grain boundaries.

TL;DR: In this article, the authors describe thin film microporosity in terms of the vacancies and voids incorporated during the deposition processes and their effects on the physical properties of thin films are discussed.

TL;DR: In this article, surface acoustic wave (SAW) resonators operating at frequencies in the range 100-500 MHz employ lightly coupled high Q (10 000-20 000) acoustical cavities.

TL;DR: The results of room temperature interactions of silver and various metals in thin films are presented in this article, where it has been found that aluminium, gold, bismuth, chromium, copper, antimony and samarium do not react with silver under the conditions given, but cadmium, gallium, indium, tin, tellurium and zinc do, and the reactions lead to the formation of corresponding intermetallic compounds.

TL;DR: In this paper, thin films of SnO x were deposited on glass substrates by reactive d.c. sputtering and were analyzed by X-ray diffraction and by Mossbauer spectroscopy.

TL;DR: In this paper, the basic interface properties of GaAs metal-oxide-semiconductor (MOS) structures formed using an anodic oxidation process in a mixed solution of glycol and water (the AGW process) were investigated.

TL;DR: In this paper, the depth profiles of Ni/Cr multilayer sandwich samples composed of 14 alternating layers were obtained by Auger electron spectroscopy in combination with sputtering by either 1 keV N 2 + ions or 1 kV Ar + ions, each yielding a similar depth resolution which follows a z 1 2 law with sputter depth z in both cases.

TL;DR: In this paper, the ripple theory is expressed in terms of only one phenomenological constant, the structure constant S, which covers completely the influence of the film structure on the deviations of real thin film behaviour from that of ideal single domains.

TL;DR: In this article, a model for the calculation of differential inverse mean free paths (DIMFPs) for the inelastic interactions of electrons with solids is described for low energy electrons (less than 2000 eV) transmitted through carbon foils of various thicknesses.

TL;DR: In this article, an attempt is made to find an explanation for the observed intrinsic stresses of clean and contaminated vapour-deposited MgF2 and ZnS films.

TL;DR: In this article, the properties of films produced by cracking various hydrocarbon gases in an r.f. glow discharge were studied and it was shown that the production rates for the films increased with the molecular weight for gases having the same structural form, e.g. C4H10 had a higher coating rate than CH4 under the same plasma conditions.

TL;DR: In this paper, a general analysis of the factors affecting a chemical vapour deposition (CVD) process in a low pressure reactor is presented, and it is shown that for the deposition of polysilicon from SiH 4 there is no transport control of the growth and that the kinetic behaviour is explained by a Langmuir adsorption model in which the growth rate is linearly proportional to the SiH4 concentration and where the adsoreption of hydrogen is much greater than that of SiH 2.

TL;DR: In this article, the authors discuss the approaches to reactive d.c. sputtering and a criterion for the conditions which allow both the sputtering of metal at the target and the oxidation of the growing film on the substrate.