Showing papers in "Thin Solid Films in 1983"

TL;DR: In this paper, the authors present a comprehensive and up-to-date description of the deposition techniques, electro-optical properties, solid state physics of the electron transport and optical effects and some applications of these transparent conductors.

TL;DR: The silicon molecular beam epitaxy (MBE) technique has only been used in silicon device applications in the last 5 years as discussed by the authors, and it is expected that in the near future silicon MBE will be applied to a much wider range of silicon devices including silicon integrated circuits.

TL;DR: In this article, the scratch test for adhesion is reviewed as the only method currently available for testing thin, hard and well-adhering coatings such as TiC on steel or cemented carbide substrates.

TL;DR: In this paper, the properties of carbide and nitride films were characterized by scanning electron microscopy and X-ray diffraction and through measurements of the microhardness and electrical resistivity.

TL;DR: In this paper, the role of various deposition parameters have been investigated and the optimum deposition conditions have been outlined, and as-deposited films with a resistivity of about (8 − 9) × 10 -4 Ω cm and an average visible transmittance of about 85% have been obtained.

TL;DR: In this paper, the authors discuss important factors to achieve high quality MBE growth such as in situ analysis, substrate preparations, growth conditions and layer properties, as well as their application in solid state devices.

TL;DR: In this paper, nearly pure carbon films (150 and 500 A thick) were prepared by condensing carbon vapour in vacuum and then heat treated under an inert gas flow from 25 to 2700 °C. The carbon films were studied comparatively with a conventional transmission electron microscope (structure and microtexture), a Raman microprobe (quantification of different types of defect by Raman spectroscopy) and an optical microscope (for determination of the optical indices).

TL;DR: In this article, a surface disorder model is proposed to explain all the dynamic anomalies in anodic native oxide/GaAs metal/oxide/semiconductor samples and anodic Al2O3/InP MIS samples.

TL;DR: In this paper, a new approach to the formation of oriented monolayers and the assembling of built-up multilayer films is presented, which is fundamentally different from the Langmuir-Blodgett (LB) procedure, being based on the spontaneous occurrence of self-organization of amphiphiles at liquid-solid interfaces.

TL;DR: In this paper, it was shown that it is possible to produce stable Langmuir-Blodgett films of metal-free phthalocyanine for various substrates and to each other.

TL;DR: In this article, the authors used a heated disc that rotates the silicon substrate to produce thin films of TiO2 by chemical vapour deposition (CVD) involving the hydrolysis of TiCl4.

TL;DR: In this paper, the reactive sputtering of titanium in mixed ArN2 and CH4 discharges was studied by measuring the compositions of both the deposited films and the layers formed on the target.

TL;DR: The reactive sputtering rate for the group IVb nitrides was found to be 100% of the metal rate as mentioned in this paper, whereas for ZrN and HfN the rate was 95% of metal rate.

TL;DR: In the early 1960s, the Langmuir-Blodgett technique of superimposing fatty acid monolayers might be suitably modified and could then offer a way to arrange appropriate functional molecules of different species in an adequate fixed structure where the molecules could cooperate in a complex and purpose-oriented manner.

TL;DR: In this paper, thin VO2-containing films have been grown on glass from vanadyl tri-isopropoxide by both chemical vapor deposition (CVD) and gel hydration and were used to characterize the near-IR transmittance switching at 68°C.

TL;DR: In this paper, the electrical properties of Ag 2− x Se 1+ x n-Si diodes were studied by using currentvoltage (I-V ) and capacitance-voltage(C-V ), and the relationship between C -2 and V was linear.

TL;DR: In this article, the authors highlight the problems associated with interpreting data on the resistivity of thin thin films and point out that extreme care must be taken in analysing data and a thorough study should be made of the morphology of the films from which data are taken.

TL;DR: In this article, a uniform large-area Bi2S3 films about 0.3 μm thick were prepared using a solution-gas interface technique using a Bi(NO3)3 solution was exposed to H2S gas and a thin solid film was formed.

TL;DR: In this paper, the authors measured the compositions of the films using Auger electron spectroscopy and their structure and morphology studied using X-ray diffraction and scanning electron microscopy respectively.

TL;DR: In this article, an approach for the quantitative analysis of a specific specie within a sample is described, which is accomplished by bombarding a sample with a highly focused charged particle beam, such as a beam of positive argon ions having an energy from five to thirty kilovolts and a current of one milliampere or greater.

TL;DR: In this paper, a review of ternary phase diagrams for group III-group V-oxygen systems and the manner in which these diagrams can be applied to an analysis of native oxide films and the existence of oxide-substrate reactions on III-V semiconductors is presented.

TL;DR: In this article, the formation of oriented monolayer and multilayer films was studied using contact angle measurements, ellipsometry, and IR internal and external multiple-reflection spectroscopy.

TL;DR: In this article, X-ray diffraction analysis revealed the presence of supersaturated solid solutions of carbon and nitrogen in chromium for concentration of carbon up to several weight per cent with no detectable nitride and carbide formation as would be predicted from binary Cr-C and Cr-N phase diagrams.

TL;DR: The physical properties of monomolecular layers of pure I, (Zn)I and II on ultrapure water were studied and the pressure-area isotherms were given as mentioned in this paper.

TL;DR: In this paper, Co-Cr layers for the perpendicular recording mode were deposited by means of r.f. sputtering under suitable conditions in an argon plasma and characterized structurally by X-ray and electron microscopy and the magnetic properties were determined with a vibrating sample magnetometer and by torque measurements.

TL;DR: In this article, the problem of low resistance ohmic contacts to silicon has been of considerable technological interest, and several methods for contact resistance determination have been introduced in the past, including two-, three-and four-terminal resistor methods of measurement.

TL;DR: In this article, a solid solution of Bi2S3SbS3 was prepared in the form of polycrystalline films on glass substrates by the dip-dry process using BiCl3, SbCl3 concentrated hydrochloric acid and thiourea.

TL;DR: In this paper, the properties of diynoic acids were investigated to determine the factors influencing their polymerization properties and morphology in Langmuir-Blodgett multilayers.

TL;DR: In this article, it was observed that a device can switch from a high impedance (OFF) state to a low impedance (ON) state (memory switching) when the voltage across them is increased to a critical value V t.

TL;DR: Fast heavy ions from the Uppsala tandem accelerator were used to irradiate various film/substrate systems such as metal/glass, metal/polymer and metal/metal.