Showing papers in "Thin Solid Films in 1986"

TL;DR: In this paper, the melting point and size determinations of submicron-sized crystallites of lead, tin, indium and bismuth were made directly from the dark field images of the crystallites.

TL;DR: In this paper, a new method was proposed for making titanium nitride (TiN) films at substrate temperatures between about 400 and 700°C, which is versatile with growth rates of up to 0.1 μm s −1 possible.

TL;DR: In this article, the influence of the electron bombardment on the diamond thin film growth is discussed in relation to the decomposition of reactant gases (CH4 and H2), and the properties of diamond thin films formed by electron assisted chemical vapour deposition are shown to have almost the same characteristics as natural diamond.

TL;DR: In this article, a short survey of improvements in the performance of cemented carbide tools for steel cutting as a result of a coating is given, in terms of nucleation, growth, preferred orientations and equilibrium growth shapes of the Al 2 O 3 crystals as well as the influence of impurities on the layer formation.

TL;DR: In this article, two groups of reactively sputtered TiN films, gold-yellow films (G films) with low resistivity and high compressive internal stress and brown-black films (B films), which are formed with and without a negative substrate bias, were examined as potential diffusion barriers.

TL;DR: In this paper, the elastic and plastic properties of polymeric layers of amorphous hydrogenated carbon produced by a plasma-activated chemical vapour deposition process are reported, and some unusual behaviour was found for the sliding friction and for elastic deformations.

TL;DR: In this paper, the electrical characteristics of low frequency (50 kHz) and high frequency (13.56 MHz) discharges used for the deposition of amorphous hydrogenated carbon thin films from CH4, C6H6 and theeir mixtures with helium gas were investigated.

TL;DR: In2Se3 thin films were grown with good stoichiometry at a substrate temperature around 460 K in the α phase and were shown to remain in the β phase above 480 K.

TL;DR: The optical and chemo-mechanical properties of deposited Al2O3 films are markedly dependent on the deposition conditions as discussed by the authors, and the refractive indices may range from as low as 1.54 up to 1.70.

TL;DR: In this paper, the stability of the electrical, optical and mechanical properties of sputtered aluminium-doped ZnO (AZO) films with a resistivity from 10 -3 to 10 -4 Ω cm was investigated.

TL;DR: In this article, the effect of a typical pre-epitaxial heat treatment in H2 atmosphere at 1000-1200°C on porous silicon (PS) was investigated.

TL;DR: In this article, it was shown that SnO2 films at temperatures above 400°C are polycrystalline with the tetragonal rutile structure and grow with a (301) preferred orientation.

TL;DR: In this paper, the authors studied the thickness dependence of transparent conducting indium-doped ZnO films and found that the density of trap states due to chemisorbed oxygen at the grain boundaries was found to depend on the orientation of grains which depended on the film thickness.

TL;DR: In this paper, the plasma-enhanced chemical vapor deposition of boron nitride films in a low pressure, parallel plate reactor incorporating an electromagnet was investigated, and the films were deposited from gas mixtures of diborane, hydrogen and ammonia.

TL;DR: In this paper, the usefulness of Ti/TiN and Zr/ZrN bilayers as low resistivity contacts and diffusion barriers between doped silicon and aluminium was examined.

TL;DR: In this paper, the main physical mechanisms responsible for compound formation were identified by analysing all these experimental data, and they were used to identify the main structural and physical mechanisms of compound formation.

TL;DR: Combining simultaneously both variable wavelength and variable angle of incidence to assess solutions of the optical parameters of a system, a procedure is developed in this article which provides more information on optical parameters than methods where either the wavelength or the angle-of-incidence is held constant.

TL;DR: In this paper, the free-carrier density and conductivity of poly-3-methylthiophene films were investigated under a low level of monochromatic light (470 nm; 1 μW cm-2).

TL;DR: In this article, the optical properties of cobalt oxide were determined by absorption spectroscopy and scanning ellipsometry, and the films were further characterized by electron microscopy and X-ray diffraction.

TL;DR: In this paper, the critical load of the TiN coating/substrate combination is defined as the load at the onset of coating failure as cracking or loss of the coating that causes an increase in acoustic emission.

TL;DR: In this paper, a survey has been made of most publications on the oxidation of transition metal silicide films on either silicon or an SiO 2 substrate, and the growth rate of SiO2 on silicon substrates obeys the linear-parabolic law.

TL;DR: In this article, the authors discuss methods and applications of spectroellipsometry towards obtaining this type of information about thin organic thin films and indicate possible directions for future optical characterization work in this field.

TL;DR: In this paper, the initial stages of the Pd-GaAs reactions are studied by high resolution transmission electron microscopy, electron diffraction and energy-dispersive analysis of X-rays.

TL;DR: In this paper, the effect of the electrical characteristics, the substrate temperature and the feed composition on both the chemical structure of the film and on the growth mechanism was analyzed, and it was found that the structure was affected by the H 2 concentration in the feed and by the discharge voltage and current values and that the polymerization rate decreases with temperature after a threshold.

TL;DR: The use of the plasma accelerated the rate of film deposition by about one order of magnitude as mentioned in this paper, which revealed the growth of two types of film depending on the substrate temperature, highly crystalline stoichiometric TiN formed with (200) surface orientation and having a columnar grain structure.

TL;DR: The mechanism which gives rise to high electrical conductivity through a Langmuir-Blodgett (LB) film in a metal/LB film/metal sandwich has been studied in this paper.

TL;DR: In this paper, the authors investigated the growth rates of Ni2Si, NiSi, Pt2Si and CrSi2 formed on a Si-100/Si-Sic or an evaporated silicon substrate during thermal annealing.

TL;DR: The properties of thin films of ZnO deposited onto single-crystal p-type InP by spray pyrolysis were investigated in this article, where the films are uniform and polycrystalline, and exhibit an optical transmission above 85%.

TL;DR: In this article, the growth of c-axis-oriented AlN thin films by low temperature reactive r.f. sputtering and the results of their examination and analysis in a variety of ways were presented.