Showing papers in "Thin Solid Films in 1990"

TL;DR: In this article, a new model to describe the breakdown statistics of thin SiO2 films is presented, and the obtained distribution of failures has been found to provide very good fits of the experimental statistical data that correspond to both constant-current and constant-voltage stress experiments.

TL;DR: In this article, the preparation of thin films by physical vapour deposition methods is described, and different processes for ejection of particles into vacuum and the characteristic properties of the particles (ionization degree, kinetic energy etc.) are discussed.

TL;DR: In this article, the effect of different deposition parameters on the sheet resistance of undoped tin oxide films has been studied and the results showed that the films are highly transparent in the visible region, have a quite low sheet resistance (25 Ω/□) and have reproducible properties.

TL;DR: In this article, a review of the design principles, useful materials, and attainable properties of architectural and automotive coatings is presented, including spectrally selective, angular selective and thermochromic coatings.

TL;DR: In this article, the optical and electrical properties of Ga2O3-doped ZnO films prepared by r.f. sputtering have been investigated as functions of preparation conditions and dopant concentration.

TL;DR: In this article, a hydrogenated amorphous Si-C alloy film (a-Si1−xCx:H with x = 0.29) was prepared by glow discharge decomposition of a silane and ethylene gas mixture, and a detailed investigation of the IR absorption was undertaken in the range from 400 to 4000 cm−1 for both the as-deposited (Ts = 250°C) and annealed (up to 1200°C).

TL;DR: In this paper, high conductive and transparent films of aluminium-doped ZnO (AZO) have been prepared by d.c. magnetron sputtering on a substrate placed parallel to the target.

TL;DR: In this article, thermally grown SiO2 overlayers (SiO2/Si substrates) with flash evaporation on silicon wafers were determined in the temperature range from 80 to 400 K. Their transport properties, i.e., electrical conductivity, Hall coefficient, magnetoresistance coefficient, Hall mobility, Seebeck coefficient, thermal conductivity and thermoelectric figure of merit, were determined.

TL;DR: In this article, the d.c.d. conductivity of a Ga2O3 thin film was measured at temperatures of over 1100 °C for 50 h and the exponent of the σ vs. PO2−n curve was n⩽ 1 4.

TL;DR: In this article, the authors show that indium tin oxide polycrystalline thin films exhibit columnar structure with a preferential (400) orientation with a dispersion of 8° around the normal of the film plane, as obtained by rocking curve measurements.

TL;DR: In this paper, the spreading of organic surfactant solutions on solid surfaces is shown to be a practical and efficient method to prepare homogeneous, substrate-aligned, thin organic films.

TL;DR: In this paper, the polarization of vibration modes with respect to the chain axis is evaluated from polarized transmission and GIR IR spectra, showing that the side-chain segments are randomly distributed around their polymer chain axes.

TL;DR: In this article, the thermal conductivity, diffusivity and emissivity of a sandwich-system of low pressure chemically vapour-deposited SiO2 and Si3N4 films were investigated in the temperature range 80 −400 K.

TL;DR: In this paper, as-deposited TiN thin films and films heat treated at 300, 400 and 550 °C an air and N 2 were analyzed by different techniques.

TL;DR: In this article, the European BRITE Project on Steered arc ion plating for the development of new ternary and quaternary ceramic coatings for cutting and forming tools was developed and optimized.

TL;DR: In this paper, the elastic constants of the group IVB nitrides TiN, ZrN and HfN were studied using Cr Kα radiation and the five available diffraction peaks (111 to (222).

TL;DR: In this article, the same process seems to be at work in the formation of the silicide by ion mixing, but the one result obtained in that case is not unambiguous since the observed disappearance at the surface of the implanted marker might be due as well to interface drag effects as to the specificity of the mobile atoms.

TL;DR: In this article, the internal stress of chromium and iron films was measured in situ by a cantilever beam technique under ultrahigh vacuum conditions, and the corresponding stress vs. thickness curve showed tensile as well as compressive stresses.

TL;DR: In this article, it has been observed that AgInSe2 films were exclusively deposited at −1.4V and co-deposition of Ag2Se and indium occured at less negative and more negative potentials respectively.

TL;DR: In this article, the deformation of sputter-deposited MoS2 solid lubricant films on 440C bearing steel was investigated using three different laboratories using r.f., d.c., and r.c. magnetron sources.

TL;DR: In this paper, the influence of preparation conditions (nitrogen pressure, substrate bias voltage and ion current density) on the crystal orientation, morphology and microhardness of the CrN films were investigated.

TL;DR: In this article, the initial stages of oxide formation were studied in situ by AES and X-ray photoelectron spectroscopy (XPS) at low oxygen pressures, while the in-depth composition of the generated oxide layer was obtained by sputter depth profiling.

TL;DR: In this article, a series of closed-cell physical vapor transport (PVT) experiments were conducted in both low earth orbit on the Space Shuttle Orbiter and in the laboratory as ground controls using the 3M-PVTOS (pVT of organic solids) apparatus.

TL;DR: In this paper, the electrochemical behavior of the samples was investigated using both d.c. and a.c., and the results indicated that the TiN coating exhibited a very high free corrosion potential and a small anodic current, which indicates a very low reactivity in all the considered solutions.

TL;DR: In this article, the electrical and optical properties of sprayed indium tin oxide (ITO) films have been reported as a function of tin concentration, substrate temperature Ts and the substrate-nozzle distance Dsn· Dsn and Ts seem to be interrelated for the optimization of good quality ITO films.

TL;DR: Hard cubic boron nitride (c-BN) rich films have been prepared by a newly developed CO2 laser physical vapour deposition process assisted by a simultaneous nitrogen ion supply.

TL;DR: In this paper, it was shown that when the subphase pH is adjusted from neutral by addition of either HCl or NaOH, maximum monolayer stability occurs at a pH of around 9.

TL;DR: In this paper, the electrical and optical properties of tin-doped and undoped In 2 O 3 films are described, and the high electron mobility of these films is due to the improvement in the crystallinity and the preferential orientation of the (222) crystal plane.

TL;DR: In this paper, a filtered arc evaporation source has been used to deposit films of carbon, aluminium, Al2O3, AIN, vanadium, VN, VO2, titanium, TiN, copper, zirconium, ZrO2, ZRN and steel.

TL;DR: In this article, a technique for depositing thin, highly oriented optical quality films of restacked molybdenum disulphide on a variety of substrates is described.