Showing papers in "Thin Solid Films in 1993"

TL;DR: In this article, a semitransparent thin film pin diode consisting of p-type nickel oxide (NiO) semiconductors was fabricated on a glass substrate and an average transmittance above 20% in the visible range was achieved.

TL;DR: In this paper, a simple model was proposed to explain the formation of compressive stress in thin films deposited with simultaneous bombardment by energetic ions or atoms, and it was shown that the stress σ is proportional to [ Y (1-v) ]E 1 2 (R j+kE 5 3 ), where E is the ion energy, R the net depositing flux, j the bombarding flux, k a material dependent parameter, Y the film material Young's modulus and v the Poisson ratio.

TL;DR: In this paper, the columnar structure of thin evaporated films was accurately reproduced using computer simulations of sequentially deposited hard disc with limited surface diffusion, and simple expressions based on geometrical arguments were provided to describe column angle and density as a function of deposition angle.

TL;DR: In this paper, a TiCl4 and water as reactants were used to grow a thin titanium dioxide thin film over a temperature range 150-600 °C in order to study the effects of temperature on the growth rate.

TL;DR: In this paper, a review of the modeling of spectroscopic ellipsometry data is presented, and is divided into three phases: the first phase involves the calculation of the Fresnel reflection coefficients for a given layer structure; it is shown that the Abeles formalism provides the most flexibility, and can be readily related to the Berreman formalism for calculations involving anisotropic layers.

TL;DR: A review of progress made in addressing the first two schemes together with a brief discussion of the third can be found in this paper, where the authors present a review of the progress made.

TL;DR: In this paper, a review of recent research results pertaining to GaN, AIN and InN, focusing on present-day techniques and future prospects, is presented, and the most recent developments towards an eventual GaN-based device technology, including the first GaN p-n junction light emitting diode.

TL;DR: In this paper, an optical method for determining the layer thicknesses in a multilayer thin film structure is developed and its performance in terms of accuracy and resolving power is characterized; the effects of layer thickness, their indices of refraction, light absorption, measurement wavelength range, thickness non-uniformity and unintentional transition layers are characterized.

TL;DR: In this paper, the dependence of structural and optical properties of films, and film composition, on the sputtering pressure was studied, and the results of the X-ray diffraction showed that all films only have the anatase TiO2 phase.

TL;DR: In this article, plan-view transmission electron microscopy revealed an open columnar structure with a relatively constant average grain size of ∼ 65 nm, and the amount of intercolumnar pores or voids gradually decreased.

TL;DR: Amorphous binary M(= Mo, Ta or W)-Si and ternary MSi-N, r.f.-sputtered from M 5 Si 3 and WSi 2 targets, are assessed as diffusion barriers between silicon substrates and copper overlayers in this paper.

TL;DR: In this paper, a transparent conducting thin films of indium tin oxide (ITO) have been deposited by d.c. reactive planar magnetron sputtering by using metal InSn alloy target in an ArO2 gas mixture, which achieved sheet resistance of as low as about 50-60 Ω/□ (or a resistivity of abouts 7 × 10−4 Ω cm).

TL;DR: In this paper, the point defects and precipitates of MBE GaAs are investigated in low-temperature (LT) GaAs, and the most outstanding features of LT MBEGaAs are very high point-defect densities, e.g. about 1020 AsGa centers cm−3 in 200 °C material, and high concentrations (about 1017 cm −3) of large (about 30 A diameter) As precipitates after annealing such material for 10 min at 600 °C.

TL;DR: In this paper, the authors reviewed a large number of publications on the AuSn system and summarized the important properties and further enhanced the development of new Au-sn bonding methods as a result of an overall understanding of oxidation and diffusion properties.

TL;DR: In this article, the complex dielectric function of Si was determined in the 1.5-4.7 eV spectral range from room temperature up to 450 °C, from measurements of the ellipsometric parameters tan ψ and cos Δ performed in ultra-high vacuum on silicon wafers covered with their native oxide, with a rotating polariser spectroscopic ellipsometer.

TL;DR: In this paper, a chemical method has been developed for the preparation of thin films of NiO and NiOOH on glass substrates from solution containing the amine complexes of the metal ions.

TL;DR: An etching mechanism for thin silicon dioxide films in hydrofluoric acid solutions has been deduced from experimental results and a review of literature sources as mentioned in this paper, which consists of two elementary chemical reactions at the surface of the silicon dioxide thin film.

TL;DR: In this article, the future of ellipsometry in microelectronics is assessed, and it is concluded that single wavelength ellipsometers alone is not sufficient; spectroscopic ellipsometers is required to establish the optimum ellipsometer measurement conditions.

TL;DR: In this article, the authors reported on the electrical resistivity of reactive reactive r.f.n.alloys over a composition range 0-60 at.% N and found that the resistivity is below 0.3 m ohms cm for films with 0-50 at.%.

TL;DR: In this article, the optical constants and thickness of thin, optically absorbing films, particularly on opaque substrates, are determined using ellipsometric techniques. But the determination of optical constants is a difficult problem when approached solely with ellipsometrical techniques.

TL;DR: In this paper, the morphological development of TiO2 thin films on mica and soda-lime substrates by atomic layer epitaxy using TiCl4 and water as reactants was studied.

TL;DR: In this paper, the ac electrical properties of copper phthalocyanine (CuPc) thin films have been studied in the frequency range 10 2 −2 × 10 4 Hz and in the temperature range 173-360 K.

TL;DR: In this paper, the effects of substrate temperature on the films' properties are discussed and the results of X-ray diffraction show that all films have an anatase crystal structure.

TL;DR: In this article, the optical properties and water absorption properties of thin oxide films were studied and it was shown that the films are porous and have a packing density lower than that of the corresponding bulk material.

TL;DR: In this paper, ultrathin zinc oxide (ZnO) films were grown on polycrystalline copper substrates via the sublimation of anhydrous zinc acetate (zn(CH3COO)2) in high vacuum (5 × 10−7mbar).

TL;DR: In this article, the shape memory behavior of annealed thin films of Ti-Ni alloy was examined by electron microprobe analysis and scanning electron microscopy and it was found that the Ar gas pressure had a critical effect on the mechanical property of the thin films, although the r.f. power also affected it.

TL;DR: Amorphous diamond films having a significant reduction in intrinsic stress are prepared by biasing a substrate to be coated and depositing carbon ions thereon under controlled temperature conditions as discussed by the authors.

TL;DR: In this article, a new method for calibrating rotating element ellipsometers is described, which is similar in concept to the residual calibration procedure developed by Aspnes (D. E. Asparnes and A. A. Studna, 1986).

TL;DR: In this paper, thin films of zinc sulfide were prepared by ultrasonically spraying a toluene solution of bis(diethyldithiocarbamato)zinc(II) onto silicon, sapphire and gallium arsenide substrates at 460-520 °C.

TL;DR: In this article, the optical properties of thin films of lead phthalocyanine in both monochlinic and triclinic forms have been studied, based on both absorption and reflectivity data for wavelengths in the UV and visible regions.