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Showing papers in "Vacuum in 1982"


Journal ArticleDOI
RV Latham1
01 Jan 1982-Vacuum
TL;DR: In this paper, a brief review of the recent experimental evidence that has established the non-metallic origin of pre-breakdown electron emission currents is presented, followed by a discussion of two new models of the emission mechanism, both of which are based on a composite microstructure consisting of a semiconducting/insulating microinclusion in intimate contact with a metallic substrate electrode.

125 citations


Journal ArticleDOI
01 Jan 1982-Vacuum
TL;DR: In this paper, the authors reviewed the performance of quadrupole-based SIMS instrumentation and discussed the various problems of relevance and the importance of phase space dynamics with particular reference to the acceptance characteristics of Quadrupole mass filters.

78 citations


Journal ArticleDOI
01 Jan 1982-Vacuum
TL;DR: The decay of a freely rotating body immersed in a rarefied gas can be used for quantitative determination of specific gas parameters such as molecular weight, rate of impingement, pressure, viscosity etc.

69 citations


PatentDOI
30 Sep 1982-Vacuum
TL;DR: In this paper, a non-single-crystalline semiconductor layer on a substrate and a method of making same was presented. But the method of the layer was not described. But it was shown that the semiconductor material can be ionized by a high-frequency electromagnetic field.

50 citations


Journal ArticleDOI
01 Jan 1982-Vacuum
TL;DR: In this paper, a simple method is suggested for handling the rate constants of structureless particles desorbing from an accommodated adsorbate-metal system, which is based on the condition that the variation of the substrate potential parallel to the surface is small and can be neglected.

39 citations


Journal ArticleDOI
01 Jan 1982-Vacuum
TL;DR: In this article, a semi-classical theory of the non-adiabatic emission of a photon at thermal energies is presented, which is necessary for sputtering and post ionization in field evaporation and is applied to ionization of hyperthermal sodium atoms from a hot tungsten surface.

34 citations


Journal ArticleDOI
01 Jan 1982-Vacuum
TL;DR: In this paper, the optical constants n and k were calculated over the wavelength region 400-700 nm and vacuum-to-air changes were investigated, and it was found that substantial modification of the optical properties occurs as a result of water sorption and oxidation in the bulk of the films.

33 citations


Journal ArticleDOI
01 Jan 1982-Vacuum
TL;DR: An allelectrostatic, computer controlled, high spatial and high energy resolution, scanning Auger electron microscope incorporating a RHEED camera is described in this paper, where the electron column has a 50 nm spatial resolution at 55 mm working distance.

32 citations


Journal ArticleDOI
01 Jan 1982-Vacuum
TL;DR: In this article, a defect cluster model was used to explain the non-stoichiometry induced by exposure to oxygen and vacuum for UO 2, U 4 O 9 and U 3 O 8 using X-ray photoelectron spectroscopy.

31 citations


Journal ArticleDOI
01 Jan 1982-Vacuum
TL;DR: In this paper, the authors investigated the relationship between sealing performance and the condition of the sealing surfaces of the Helicoflex gasket and found two kinds of sealing mechanisms according to the surface conditions of the flange.

31 citations


Journal ArticleDOI
01 Jan 1982-Vacuum
TL;DR: In this article, it is shown that fluorine atoms and molecules are the main particles responsible for etching silicon and that atomic fluorine is the main active particle for silicon dioxide.

PatentDOI
27 May 1982-Vacuum
TL;DR: In this paper, a method and apparatus for producing amorphous silicon layers for solar cells or electrophotography by plasmaenhanced chemical vapor deposition (CVD) through glow-discharge decomposition of a reaction gas containing monosilane or a higher order silicon hydride in a reaction chamber.

Journal ArticleDOI
01 Jan 1982-Vacuum
TL;DR: A number of ion beam techniques for modifying the surface properties of solids are discussed in this paper, including ion implantation, ion beam mixing, ion plating and recoil mixing.

Journal ArticleDOI
01 Jan 1982-Vacuum
TL;DR: In this paper, measurements of breakdown time lags have been made in gaps of up to 1 mm in ultra-high vacuum, and a clear discontinuity has been found in the distribution of these times demonstrating that breakdown takes place either within 30 ns of applying the voltage or after a long time delay.

Journal ArticleDOI
01 Jan 1982-Vacuum
TL;DR: In this paper, an effusion cell with a single thin wall orifice, a single channel effusion, and a multi-component system GaAs-AlGaAs and PbTe-PbSnTe are discussed with emphasis on the stoichiometry of the films deposited.

Journal ArticleDOI
01 Jan 1982-Vacuum
TL;DR: In this paper, electron beam pulses of 60 ns duration in the 0.4-4 J/cm 2 energy density range were used to identify a liquid layer from which the phases are forming by subsequent fast cooling.

Journal ArticleDOI
01 Jan 1982-Vacuum
TL;DR: It is shown, via several approximate and one more exact analysis, that the desorption rate-temperature function provides a close approximation to the initial population distribution.

Journal ArticleDOI
01 Jan 1982-Vacuum
TL;DR: In this paper, a review of analytical models of single crystal sputtering, including consideration of focusons, channelling and transparency, is presented, and computer calculations, dealing with both binary models and dynamical models involving different numbers of interacting particles, are considered.

PatentDOI
16 Dec 1982-Vacuum
TL;DR: In this paper, a high-velocity fan was provided in the cooling chamber for the rapid circulation of the cooling gas over the work parts, and a unique door arrangement was designed to insure the sealing of a cooling chamber both during the evacuation thereof upon transfer of the work part thereto and during the cooling cycle therein.

Journal ArticleDOI
01 Jan 1982-Vacuum
TL;DR: In this article, it is shown that the ion-assisted chemical reaction between oxygen or nitrogen and the polymerizing species, forming volatile products, together with the physical sputtering, makes these areas accessible to fluorine-containing species responsible for the chemical etching of SiO 2.

Journal ArticleDOI
01 Jan 1982-Vacuum
TL;DR: In this paper, the electron bombardment induced conductivity book is referred for you because it gives not only the experience but also lesson, the lessons are very valuable to serve for you.

Journal ArticleDOI
01 Jan 1982-Vacuum
TL;DR: In this paper, a high voltage vacuum gap prior to breakdown using a laser light scattering technique was observed in a high-voltage vacuum gap before the failure of a piece of plastic with radii less than 0.4 μm.

Journal ArticleDOI
01 Jan 1982-Vacuum
TL;DR: In this article, the problems associated with the change of both the equilibrium and composition of the residual gas within ionization gauge heads during measurements are presented, and the phenomena which contribute to the specific shape of the plot (log P,t) are discussed as a basis for understanding the behavior of gauge heads as sinks and/or sources of gas.

Journal ArticleDOI
01 Jan 1982-Vacuum
TL;DR: In this paper, a self-consistent model for the electronic structure of a field-evaporating ion, which allows for self-energy changes due to large charge transfers, is presented.

Journal ArticleDOI
01 Jan 1982-Vacuum
TL;DR: In this paper, the effects of nonstructural parameters (scattering phase shifts, complex optical potential, and Debye temperature) on the structural conclusions of the analyses of clean metallic surfaces were investigated.

Journal ArticleDOI
01 Jan 1982-Vacuum
TL;DR: In this paper, a thermodynamic analysis is presented for specimen heating in plasma assisted processes such as ion plating, and the analysis can also be used to predict the ultimate specimen temperature at different discharge power inputs and specimen mounting arrangements, both in the sputter cleaning and deposition stages.

PatentDOI
12 Apr 1982-Vacuum
TL;DR: In this article, a method of implanting a magnetic garnet film with ions is described, in which a covering film is provided on a monocrystalline magnetic nanoprecovery film for magnetic bubbles, and hydrogen ions are implanted in a desired portion of a surface region in the magnetite film through the covering film.

PatentDOI
09 Aug 1982-Vacuum
TL;DR: In this paper, a masking layer composed of silicon nitride was used for the source/drain implantation 8 of the n-channel transistors, where the oxide layer thickness, d4, over the polysilicon-1 level determines the thickness of the insulating layer, dcox, of the capacitor structures.

Journal ArticleDOI
01 Jan 1982-Vacuum
TL;DR: In this article, a high resolution (≲30 me V) electron spectrometer was adapted to measure the electron spectra of the microscopically localized field electron emission processes that occur on broad-area high voltage electrodes.