Showing papers in "Vacuum in 1985"

TL;DR: In this paper, the authors derived analytic relations for the threshold sputtering energy at not too oblique ion incidence based on a few collision model, and found that for this minimum energy-loss process, the scattering angle is equal for each collision.

TL;DR: In this article, the spatial distribution of field emission sites on planar high voltage electrodes and the emission current pattern within an individual site were analyzed. But, the emission sites are generally composed of three or more "sub-sites" that become temporally unstable at current > 10 −7 and the electron energy spectra of sub-sites are characteristically single peaked.

TL;DR: In this article, the incorporation of gold from an evaporation source during plasma polymerization of tetrafluoromethane CF 4 in an rf (20 MHz) glow discharge excited by means of a planar magnetron has been investigated.

TL;DR: In this article, an ion implanter of cylindrical geometry is described suitable for uniform implantation at a few keV of inert gas ions of narrow energy distribution into conducting targets of axial symmetry.

TL;DR: In this article, an atomic absorption spectrophotometer was used to measure the evaporation flow rate of the alkali vapours released from dispensers of caesium generators.

TL;DR: In this paper, the formation of thin films of transition metal silicides is an important step in the manufacture of advanced semiconductor devices, particularly in VLSI technology, and it is shown how chemical vapour deposition (CVD) of appropriate volatile molecular compounds containing silicon-metal bonds can lead to silicide film formation on a variety of substrates.

TL;DR: Refractory metal silicides have been shown to be compatible with their proposed use as replacements for polysilicon as gate level interconnects in MOS processes as mentioned in this paper, and various process and material choices have been outlined and factors relevant to the selection of the optimum combinations presented.

TL;DR: In this article, the authors examined the usefulness of low resistive contacts and diffusion barriers between doped silicon and aluminium and concluded that RBS, commonly used in the study of diffusion barrier properties, gives optimistic information on the upper limit of the metallurgical stability of the barrier layers.

TL;DR: In this paper, high quality ITO films were produced by reactive e-beam deposition onto heated glass, and the complex dielectric function was evaluated from spectrophotometric measurements in the full 0.2-50 μm range.

TL;DR: A review of the technique of total current spectroscopy (TCS) and its application to the study of the electronic structures of surfaces is presented in this article, where an attempt is made to include all the TCS results reported since 1978 and to discuss in some detail those results that have contributed to the characterization of this technique.

TL;DR: In this article, a review of chemical vapour deposition (CVD) processes suitable for applying metal interconnection layers to semiconductor integrated circuits is presented and conditions under which uniform, smooth films can be grown are discussed.

TL;DR: In this paper, a planar magnetron was used to sputter a fluorocarbon polymer with a low Mg/F content in order to increase the optical absorption at high power levels.

TL;DR: In this paper, a new generation of non-evaporable getters is presented and studied to fulfill the requirements of low-temperature applications, which is characterized by a high activity for the residual gases.

TL;DR: Gentsch and Messer as discussed by the authors proposed a nearly closed system with pure gold layers on the electrodes, which shows the following remarkable advantages with respect to grid-type ion gauges: (a) Shielded volume for effective ion formation, no influence of exterior electric fields.

TL;DR: In this article, the angular distribution of molecular flux from a circular orifice is calculated for thickness-diameter ratios less than 2 by use of the test-particle Monte Carlo method.

TL;DR: In this paper, a high sensitivity (0.1 mV), short response time (1 ms) electronic system for measurement of surface potential change by means of the static capacitor method has been constructed.

TL;DR: In this article, a specially designed sample holder was used to form SOI structures by high dose oxygen implantation under controlled temperature conditions, using a layer of molten tin to provide a good thermal contact between the silicon wafer and a resistively heated support.

TL;DR: In this paper, several observations relating to the modification of the adhesion of thin Al and Au films to semiconductors and oxides by photon irradiation at energies up to 21 eV were presented.

TL;DR: In this article, a thin stable layer of gold oxide is formed during film growth and diffuses into the substrate, providing a strong bond for subsequent film deposition, and the results show that the reflectance of oxygen-assisted films is reduced by trapping of the oxygen in the gold but no bulk chemical or structural changes are detected.

TL;DR: In this paper, the separation efficiency of clean room air filters has been extended to 99.9999% and the principle of low turbulence displacement flow has been used to obtain the required clean air environment for the most demanding research and production tasks.

TL;DR: In this article, the results of the experiments in this respect are discussed with regard to the basic film properties and potential applications of the layers and an attempt has been made to study the effect of adding halocarbons to the hydrocarbon gases.

TL;DR: A review of experimental and theoretical work devoted to the study of directional effects in kinetic ion-electron emission is given in this paper, where the authors present a survey of the literature.

TL;DR: In this article, the authors describe the physical and engineering aspects of FIB technologies, including an evaluation of the fabrication techniques used to build three-dimensional microstructures and micromechanical devices.

TL;DR: In this article, the applicability of ionitriding process to the ASTM A564 Tp 630 steel is studied, and an analysis of surface structures and of size and shape variations induced by the treatment are developed with reference to varied operating conditions and component geometries.

TL;DR: In this paper, the double electrical layer at the plasma-insulator interface and the results of calculation of electron density and potential distribution in this layer were presented, which showed that electron density at the insulator surface is 3-5 orders of magnitude higher than that in the plasma volume.

TL;DR: The role of photon induced desorption of gases arising from hard X-rays has been investigated within a vacuum chamber of aluminium alloy (Extrudal) as proposed for the new European LEP accelerator as discussed by the authors.

TL;DR: For many applications, including microchips, ring laser gyro mirrors, X-ray mirrors and some specialist bearings, surfaces of sub-nanometre smoothness and frequently overcoatings of the same quality are required as mentioned in this paper.

TL;DR: In this article, Borophosphosilicate glass (BPSG) films prepared by chemical vapour deposition may exhibit significant flow below 900°C. This property makes BPSG films attractive for use as a planarization layer during the fabrication of VLSI devices.

TL;DR: In this article, a positive ion glow-discharge source is described, where a metallic screen, placed in front of the cathode, focuses the ion spot around the extraction hole.

TL;DR: In this article, a simple model for the growth of microcolumns at oblique incidence deposition is proposed to describe the metal layer formation in the next generation of video tapes with their superior properties such as recording density, output level, frequency characteristics and signal to noise ratio.