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Showing papers in "Vacuum in 1995"


Journal ArticleDOI
01 Jul 1995-Vacuum
TL;DR: In this article, the effect of composition and temperature on the dielectric constant of thin chalcogenide films from the Te 46 − x As 32 − x Ge 10 Si 12 (0 ⩽ x ⩾ 5) system has been studied.

127 citations



Journal ArticleDOI
01 Aug 1995-Vacuum
TL;DR: In this paper, high-resolution electron-energy-loss spectroscopy (HREELS) and temperature-programmed desorption (TPD) was used to study water adsorption on the clean graphite (0001) surface.

90 citations


Journal ArticleDOI
01 Jul 1995-Vacuum
TL;DR: In this article, the effect of post-deposition annealing temperature on the electrical, optical and structural properties of ITO films was studied and it was found that the increase of the annaling temperature will improve the film electrical properties.

89 citations


Journal ArticleDOI
01 Jul 1995-Vacuum
TL;DR: A review of the current status of ion assisted deposition of optical thin films is presented in this paper, where different kinds of ion sources and their relative merits and demerits are discussed.

69 citations


Journal ArticleDOI
01 Aug 1995-Vacuum
TL;DR: In this article, the band-gap energies of CdS grown by chemical bath deposition are obtained by optical transmission and photoacoustic spectroscopy and correlated over a range of thermal annealing temperature, in which the evolution of sample structure is characterized by X-ray diffraction patterns.

62 citations


Journal ArticleDOI
01 Feb 1995-Vacuum
TL;DR: In this paper, the authors investigated the effect of the vacuum condition of the erbium system on the growth steps and layering of films of varying thickness and found that the grain size increases with substrate temperature and deposition rate and its dependence on substrate temperature is consistent with the activation energy model.

58 citations


Journal ArticleDOI
01 Jul 1995-Vacuum
TL;DR: In this paper, the relative proportions of atomic and molecular nitrogen in the cathode sheath and plasma regions of these discharges operated at −2 kV cathode bias in the range 0.1-10 Pa.

57 citations


Journal ArticleDOI
01 Apr 1995-Vacuum
TL;DR: In this paper, a simple explanation for the self-expulsion mechanism of droplets is given, in which droplets are expelled from the coating surface during film growth, generating craters and dish-like growth defects, and a subsequent coating of the contaminated surface with the unbalanced magnetron leads to growth defects.

57 citations


Journal ArticleDOI
01 Aug 1995-Vacuum
TL;DR: In this paper, a multitechnique surface analysis system is presented for research on ion-solid interactions and for survey analysis, which has been designed for the purpose of survey analysis.

50 citations


Journal ArticleDOI
01 Dec 1995-Vacuum
TL;DR: In this paper, X-ray photoelectron spectroscopy (XPS or ESCA) spectra of kaolinite and montmorillonite, two layered silicates used in catalytic processes, are compared with the spectra for zeolites and related silicates, where there are direct correlations between shifts in ESCA core-level and valence band features and bond ionicity.

Journal ArticleDOI
01 Aug 1995-Vacuum
TL;DR: In this paper, an ECR plasma source was used to grow thin films of tantalum oxide and lithium tantalate on Si (100) and Si (111) substrates by molecular beam epitaxy.

Journal ArticleDOI
01 Nov 1995-Vacuum
TL;DR: In this paper, the effects of the starting material (compound powder or components sequentially deposited) have been studied for thin Se and In films, the effect of the variation of the In/Se atomic ratio, the annealing conditions (temperature, time, under selenium pressure or not) were used as parameters.

Journal ArticleDOI
01 Nov 1995-Vacuum
TL;DR: In this article, a review of PVD coatings used for decorative metal-finishing is given, an account is given of studies to extend the range of useful coating materials and the interrelationships between structure, chemical composition and mechanical as well as optical properties are investigated.

Journal ArticleDOI
01 Aug 1995-Vacuum
TL;DR: In this paper, a relation between the minimum values of the target current, (target current density, target power density) and the working gas (argon) pressure, at which the discharge still exists, was proposed as an instrument of the self-sputtering effect.

Journal ArticleDOI
01 Jul 1995-Vacuum
TL;DR: The content of hydrogen and its depth profile in diamond-like carbon (DLC) films deposited by the microwave plasma deposition technique was determined by Elastic Recoil Detection Analysis (ERDA) using 85 MeV 58 Ni ions as discussed by the authors.

Journal ArticleDOI
N.J. Dartnell1, MC Flowers1, R Greef1, J. Zhu1, A Blackburn1 
01 Apr 1995-Vacuum
TL;DR: In this paper, the reactive ion etching of low pressure chemical vapour deposited SixC1 −x layers (x = 0.5 and 0.8) on oxide covered Si(100) wafers has been investigated using in-situ ellipsometry, mass spectrometry and optical emission spectroscopy.

Journal ArticleDOI
01 Mar 1995-Vacuum
TL;DR: In this paper, the effects of total pressure on the structural, optical and electrical properties of the films were studied using X-ray diffraction, scanning electron microscopy, reflectance spectra and resistivity measurements.

Journal ArticleDOI
01 Jul 1995-Vacuum
TL;DR: In this paper, a review of recent advances in process control showed the potential of techniques such as unbalanced magnetron sputtering in a closed magnetic field configuration, thermionically enhanced deposition and closed loop control with optical gas and metal plasma emission monitoring.

Journal ArticleDOI
01 Dec 1995-Vacuum
TL;DR: In this paper, hydrogenated microcrystalline silicon (μc-Si:H) thin films with Cu as a dopant material (about 2 wt%) were deposited by RF planar magnetron sputtering in an argon/hydrogen plasma.

Journal ArticleDOI
01 Apr 1995-Vacuum
TL;DR: In this paper, the conduction activation energy (E σ ) of the as-deposited samples, as obtained from the temperature dependence of the electrical conductivity, is 0.391 eV.

Journal ArticleDOI
01 Feb 1995-Vacuum
TL;DR: The PdCu(110) plane, with Pd: Cu = 1:1 in the bulk, was prepared to have various surface compositions by applying cycles of argon ion sputtering (ion energy of 750 eV with ion current densities ⩽ 1 μA/cm2) and annealing temperatures (TAN) of 420 < T < 820 K.

Journal ArticleDOI
01 Aug 1995-Vacuum
TL;DR: In this paper, the X-ray emission spectra of Zr and N induced by the bombardment of the film with high energy electrons from the discharge were analyzed by a wet chemistry method.

Journal ArticleDOI
01 Jul 1995-Vacuum
TL;DR: In this article, a high temperature quartz crystal microbalance (HTQCM) was developed in order to extend its application range up to the Curie point (573 °C) of the quartz resonators.

Journal ArticleDOI
01 Mar 1995-Vacuum
TL;DR: In this article, the integral energy influx and the plasma parameters in front of the substrate were determined by means of Langmuir-probe measurements and energy resolved mass spectrometry (plasma monitoring).

Journal ArticleDOI
01 Aug 1995-Vacuum
TL;DR: XPS, ESR and IR spectroscopy have been used to study changes on the surface of a RhCeO2 catalyst induced by thermal treatments under vacuum and subsequent CO adsorption as discussed by the authors.

Journal ArticleDOI
01 Feb 1995-Vacuum
TL;DR: In this article, a 27.12 MHz capacitively coupled parallel plate discharge configuration using argon and oxygen as the process gases is studied. And the influence of rf-power density and total pressure on the ion mass spectra and energy distribution is discussed, and a transition from space charge-limited to mobility limited ion transport in the plasma sheath occurs.

Journal ArticleDOI
01 Dec 1995-Vacuum
TL;DR: In this paper, a ternary Nb1 − xAlxN films were grown on single-crystal MgO(001) substrates by reactive triode sputtering in an Ar + N2 gas mixture.

Journal ArticleDOI
01 May 1995-Vacuum
TL;DR: In this paper, the energy dependence of the inelastic mean free path (IMFP) for high atomic number elements obtained from such a model and applying AI standard were found to be in reasonable agreement with the theoretical values.

Journal ArticleDOI
01 Aug 1995-Vacuum
TL;DR: In this paper, the effect of metal, semiconductor and interface parameters on the Schottky barrier height is analyzed in order to determine whether the lateral distribution of the barrier height obeys a normal or the lognormal law.