0.97 mΩcm 2 /820 V 4H-SiC super junction V-groove trench MOSFET
TL;DR: In this article, a Super Junction (SJ) V-groove trench MOSFET was fabricated and demonstrated a low specific on-resistance (R on A) of 0.97 mΩcm2 and a blocking voltage (V b ) of 820 V.
Abstract: We have fabricated Super Junction (SJ) V-groove trench MOSFETs (VMOSFETs), demonstrated a low specific on-resistance (R on A) of 0.97 mΩcm2 and a blocking voltage (V b ) of 820 V. In the first trial, SJ structure in 4H-SiC have proved to be a good combination with MOS interface on (0-33-8) faces which keep high channel mobility in high doping concentration. We designed a protection structure called “upper p-pillar region” and demonstrated that V b lowering appeared according to its width.
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01 Dec 2018
TL;DR: In this article, a 1.2 kV-class superjunction (SJ) UMOSFET was realized using a multi-epitaxial growth method.
Abstract: A 1.2 kV-class superjunction (SJ) UMOSFET was realized using a multi-epitaxial growth method. The dynamic characteristics were characterized, and the potential of a product level device was identified for the first time. The switching characteristics with Schottky barrier diode showed no degradation in spite of the large drain-source capacitance (C DS ). The reverse recovery characteristics of the body diode exhibited a soft recovery which may originate from the large C DS and the short lifetime of minority carrier. A high short circuit capability comparable to a non-SJ device was demonstrated.
46 citations
TL;DR: A review of multidimensional device architectures for power electronics can be found in this article , where the performance limits, scaling and material figure of merits of the different architectures are discussed.
Abstract: Power semiconductor devices are key to delivering high-efficiency energy conversion in power electronics systems, which is critical in efforts to reduce energy loss, cut carbon dioxide emissions and create more sustainable technology. Although the use of wide or ultrawide-bandgap materials will be required to develop improved power devices, multidimensional architectures can also improve performance, regardless of the underlying material technology. In particular, multidimensional device architectures—such as superjunction, multi-channel and multi-gate technologies—can enable advances in the speed, efficiency and form factor of power electronics systems. Here we review the development of multidimensional device architectures for efficient power electronics. We explore the rationale for using multidimensional architectures and the different architectures available. We also consider the performance limits, scaling and material figure of merits of the architectures, and identify key technological challenges that need to be addressed to realize the full potential of the approach. This Review examines the use of multidimensional architectures—such as superjunction, multi-channel and multi-gate technologies—in power electronics devices, exploring the performance limits, scaling and material figure of merits of the different architectures.
43 citations
TL;DR: In this paper, an improved 4H-SiC U-shaped trench-gate metal-oxide-semiconductor field effect transistors (UMOSFETs) structure with low ON-resistance and switching energy loss is proposed.
Abstract: In this paper, an improved 4H-SiC U-shaped trench-gate metal–oxide–semiconductor field-effect transistors (UMOSFETs) structure with low ON-resistance ( ${R}_{ \mathrm{\scriptscriptstyle ON}}$ ) and switching energy loss is proposed. The novel structure features an added n-type region, which reduces ON-resistance of the device significantly while maintaining the breakdown voltage ( ${V}_{\textsf {BR}}$ ). In addition, the gate of the improved structure is designed as a p-n junction to reduce the switching energy loss. Simulations by Sentaurus TCAD are carried out to reveal the working mechanism of this improved structure. For the static performance, the ON-resistance and the figure of merit (FOM $= {V}_{\textsf {BR}}^{\textsf {2}}/{R}_{ \mathrm{\scriptscriptstyle ON}}$ ) of the optimized structure are improved by 40% and 44%, respectively, as compared to a conventional trench MOSFET without the added n-type region and modified gate. For the dynamic performance, the turn-on time ( ${T}_{ \mathrm{\scriptscriptstyle ON}}$ ) and turn-off time ( ${T}_{ \mathrm{\scriptscriptstyle OFF}}$ ) of the proposed structure are both shorter than that of the conventional structure, bringing a 43% and 30% reduction in turn-on energy loss and total switching energy loss ( ${E}_{\mathbf {SW}}$ ).
36 citations
Cites background from "0.97 mΩcm 2 /820 V 4H-SiC super jun..."
...Multiple-energy nitrogen implantation [19]–[21] is employed to form an n-type region that is close to homogenous with a doping concentration of 5....
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...source regions are formed by Al and N implantations, respectively [21], [22]....
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TL;DR: A general review of the critical processing steps for manufacturing silicon carbide (SiC) MOSFETs and power applications based on SiC power devices are covered in this article . But, the reliability issues of SiC MOS FETs are also briefly summarized.
Abstract: Owing to the superior properties of silicon carbide (SiC), such as higher breakdown voltage, higher thermal conductivity, higher operating frequency, higher operating temperature, and higher saturation drift velocity, SiC has attracted much attention from researchers and the industry for decades. With the advances in material science and processing technology, many power applications such as new smart energy vehicles, power converters, inverters, and power supplies are being realized using SiC power devices. In particular, SiC MOSFETs are generally chosen to be used as a power device due to their ability to achieve lower on-resistance, reduced switching losses, and high switching speeds than the silicon counterpart and have been commercialized extensively in recent years. A general review of the critical processing steps for manufacturing SiC MOSFETs, types of SiC MOSFETs, and power applications based on SiC power devices are covered in this paper. Additionally, the reliability issues of SiC power MOSFET are also briefly summarized.
27 citations
TL;DR: In this article, a silicon carbide (SiC) super-junction JFET was designed, simulated and fabricated through trench-etching and sidewall-implantation technology, which avoids the expensive epi-regrowth process.
Abstract: The silicon carbide (SiC) super-junction JFET was designed, simulated and fabricated through trench-etching and sidewall-implantation technology, which avoids the expensive epi-regrowth process. The fabricated super-junction JFET achieves a breakdown voltage of 1000V with specific on-resistance of 1.3m $\Omega ~\cdot \text {cm}^{{2}}$ . The threshold voltage ( ${V}_{\text {th}}$ ) is stable over a wide range of temperature with less than 0.2V shift from 25°C to 175°C. These results demonstrate that the trench-etching and sidewall-implantation technology is a promising option to fabricate SiC super-junction devices. These devices could have great potential for future power electronics.
25 citations
Cites background from "0.97 mΩcm 2 /820 V 4H-SiC super jun..."
...implantation technology [10]–[13] or trench-etching and epi-regrowth technology [14]....
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References
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Rohm1
TL;DR: In this article, the double-trench MOSFET was proposed to improve the oxide destruction at the trench bottom during high drain-source voltage application, which has both source trenches and gate trenches.
Abstract: The trench gate structure MOSFET, with its lack of JFET resistance, is one of the structures able to achieve low on-state resistance [1,2]. In 2008, this group succeeded in fabricating 790V SiC trench MOSFETs with the lowest Ron,sp (1.7 mΩcm2) at room temperature. However these devices had issues regarding oxide destruction at the trench bottom during high drain-source voltage application. In order to improve this problem, this group developed the double-trench MOSFET structure. This structure has both source trenches and gate trenches. This paper compares two kinds of trench MOSFETs: the conventional, single trench structure and a double-trench structure. Also, the latest characteristics are presented.
30 citations
TL;DR: In this paper, a novel trench SiC-MOSFET with buried p+ regions and demonstrated the high breakdown voltage of 1700 V and specific on-resistance of 35 mΩcm2.
Abstract: A breakdown of a conventional trench SiC-MOSFET is caused by oxide breakdown at the bottom of the trench We have fabricated a novel trench SiC-MOSFET with buried p+ regions and demonstrated the high breakdown voltage of 1700 V and the specific on-resistance of 35 mΩcm2
21 citations