1.3 μm room-temperature GaAs-based quantum-dot laser
TL;DR: In this article, the ground state of an InGaAs/GaAs quantum-dot ensemble was obtained at 1.31 μm with a threshold current density of 270 A/cm2 using high-reflectivity facet coatings.
Abstract: Room-temperature lasing at the wavelength of 1.31 μm is achieved from the ground state of an InGaAs/GaAs quantum-dot ensemble. At 79 K, a very low threshold current density of 11.5 A/cm2 is obtained at a wavelength of 1.23 μm. The room-temperature lasing at 1.31 μm is obtained with a threshold current density of 270 A/cm2 using high-reflectivity facet coatings. The temperature-dependent threshold with and without high-reflectivity end mirrors is studied, and ground-state lasing is obtained up to the highest temperature investigated of 324 K.
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TL;DR: In this paper, a self-assembling method was used to grow InAs quantum dots with size fluctuations of less than 4% on GaAs using the self-assembly method and the photoluminescence linewidth was reduced to 21 meV at room temperature.
Abstract: InAs quantum dots with size fluctuations of less than 4% were grown on GaAs using the self-assembling method. By covering the quantum dots with In0.2Ga0.8As or In0.2Al0.8As, strain in InAs dots can be partly reduced due to relaxation of lattice constraint in the growth direction. This results in low-energy emission (about 1.3 μm) from the quantum dots. The photoluminescence linewidth can be reduced to 21 meV at room temperature. This width is completely comparable to the theoretical limit of a band-to-band emission from a quantum well at room temperature. Because the dots can be uniformly covered by the strain reducing layers, factors that degrade size uniformity during coverage, such as compositional mixing or segregation, will be suppressed, allowing for an almost ideal buried quantum dot structure.
551 citations
TL;DR: The aim of this review is to introduce the reader to the concepts of photonic crystals, describe the state of the art and attempt to answer the question of what uses these peculiar structures may have.
509 citations
TL;DR: In this paper, the lowest room-temperature threshold current density, 26 A/cm/sup 2 ), of any semiconductor diode laser was reported for a quantum dot device with a single InAs dot layer contained within a strained In/sub 0.85/As quantum well.
Abstract: The lowest room-temperature threshold current density, 26 A/cm/sup 2/, of any semiconductor diode lasers is reported for a quantum dot device with a single InAs dot layer contained within a strained In/sub 0.15/Ga/sub 0.85/As quantum well. The lasers are epitaxially grown on a GaAs substrate, and the emission wavelength is 1.25 /spl mu/m.
469 citations
TL;DR: In this article, the lateral size of InAs islands has been found to be approximately 1.5 times larger as compared to the InAs/GaAs case, whereas the island heights and surface densities were close in both cases.
Abstract: InAs self-organized quantum dots inserted in InGaAs quantum well have been grown on GaAs substrates by molecular beam epitaxy. The lateral size of the InAs islands has been found to be approximately 1.5 times larger as compared to the InAs/GaAs case, whereas the island heights and surface densities were close in both cases. The quantum dot emission wavelength can be controllably changed from 1.1 to 1.3 μm by varying the composition of the InGaAs quantum well matrix. Photoluminescence at 1.33 μm from vertical optical microcavities containing the InAs/InGaAs quantum dot array was demonstrated.
359 citations
TL;DR: Recent advances in the methods of preparing high quality silicon nanocrystals and strategies for forming self-assembled monolayers (SAMs) are summarized, with a focus on their bio-applications.
Abstract: Concerns over possible toxicities of conventional metal-containing quantum dots have inspired growing research interests in colloidal silicon nanocrystals (SiNCs), or silicon quantum dots (SiQDs). This is related to their potential applications in a number of fields such as solar cells, optoelectronic devices and fluorescent bio-labelling agents. The past decade has seen significant progress in the understanding of fundamental physics and surface properties of silicon nanocrystals. Such understanding is based on the advances in the preparation and characterization of surface passivated colloidal silicon nanocrystals. In this critical review, we summarize recent advances in the methods of preparing high quality silicon nanocrystals and strategies for forming self-assembled monolayers (SAMs), with a focus on their bio-applications. We highlight some of the major challenges that remain, as well as lessons learnt when working with silicon nanocrystals (239 references).
358 citations
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TL;DR: In this paper, the authors used molecular beam epitaxy to grown coherently strained InGaAs islands on (100) GaAs substrates, which show room-temperature photoluminescence at 1.3 μm with a full width at half-maximum of only 28 meV.
Abstract: We use molecular beam epitaxy to grown coherently strained InGaAs islands on (100) GaAs substrates. The islands show room‐temperature photoluminescence at 1.3 μm with a full width at half‐maximum of only 28 meV. The integrated photoluminescence intensity is comparable to that of a quantum well. The islands are formed by depositing 22 monolayers of In0.3Ga0.7As with alternating beams of In, Ga, and As2. Atomic force microscopy measurements show that the islands are ellipsoidal sections with an average peak height of 24 nm. The intersection of the islands with the (100) plane is an ellipse whose major axis is along [011] and has a mean length of 54 nm, and whose minor axis is along [011] and has a mean length of 36 nm. The islands form a dense array with an areal coverage of about 40%.
231 citations
TL;DR: In this paper, a 1.3/spl mu/m continuous wave lasing operation was demonstrated in a GaInNAs quantum-well laser at room temperature, which was achieved by increasing the nitrogen content (up to 1%) in the quantum layer.
Abstract: A 1.3-/spl mu/m continuous wave lasing operation is demonstrated, for the first time, in a GaInNAs quantum-well laser at room temperature. This lasing performance is achieved by increasing the nitrogen content (up to 1%) in GaInNAs quantum layer. It is thus confirmed that this type of laser is suitable for use as a light source for optical fiber communications.
214 citations
TL;DR: In this paper, a 1.3-μm emitting self-formed In 0.5 Ga 0.9 As quantum dots on GaAs substrates by supplying InAs and GaAs monolayers alternately during atomic layer epitaxy.
Abstract: We grew 1.3-μm emitting self-formed In 0.5 Ga 0.5 As quantum dots on GaAs substrates by supplying InAs and GaAs monolayers alternately during atomic layer epitaxy. The dots were 20 nm in diameter and 10 nm in height, and were surrounded by In 0.5 Ga 0.9 As in the lateral direction and by GaAs perpendicular to the dots. Diamagnetic energy shifts of excitons in the dots clearly demonstrated three-dimensional quantum confinement
165 citations
TL;DR: In this paper, the spectral emission and the electroluminescence efficiency dependence on growth conditions of 1.3 μm wavelength InGaAs/GaAs quantum dots were analyzed. And they showed that highly efficient 1. 3 μm room temperature electrolUMinescence can be achieved with only ten total deposited monolayers with an averaged In content of 50%.
Abstract: Data are presented characterizing the spectral emission and the electroluminescence efficiency dependence on growth conditions of 1.3 μm wavelength InGaAs/GaAs quantum dots. We show that highly efficient 1.3 μm room temperature electroluminescence can be achieved with only ten total deposited monolayers with an averaged In content of 50%. Atomic force microscopy shows that the 1.3 μm wavelength quantum dots form with a density of ∼1.3×1010 cm−2.
164 citations
30 Jun 1997
TL;DR: In this paper, a model describing the decrease in threshold current density with temperature at low temperatures is proposed, where the range of negative characteristic temperatures in temperature dependences of threshold current densities of low-threshold (In, Ga)As/(Al, Ga), as quantum dot injection lasers has been observed.
Abstract: The range of negative characteristic temperatures in temperature dependences of threshold current density of low-threshold (In, Ga)As/(Al, Ga)As quantum dot injection lasers has been observed. A model describing the decrease in threshold current density with temperature at low temperatures is proposed.
84 citations