1.53 [micro sign]m GaInNAsSb laser diodes grown on GaAs(100)
Abstract: GaInNAsSb/GaNAs double quantum well ridge waveguide laser diodes with room temperature lasing wavelength of 1532 nm are reported. The devices exhibit leakage-corrected threshold current densities as low as 969 A cm−2 per quantum well in pulsed mode, with characteristic temperatures as high as 90 K.
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1.53m GaInNAsSb laser diodes grown on GaAs(100)
- J.A. Gupta, P.J. Barrios, X. Zhang, G. Pakulski and X. Wu GaInNAsSb=GaNAs double quantum well ridge waveguide laser diodes with room temperature lasing wavelength of 1532 nm are reported.
- After accounting for lateral leakage current, the threshold current densities for sets of devices with cavity lengths of 1202 and 444 mm were found to be 1.94 and 2.66 kA cm 2.
- The lasers were cleaved into bars with FabryPerot cavity lengths of 1202, 894 and 444 mm and mounted p-side up onto alumina carriers.
- The authors are grateful for the technical support of P. Chow-Chong, G.I. Sproule, R. Wang, M. Beaulieu, M. Bresee and helpful discussions with Z.R. Wasilewski.
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