Journal ArticleDOI
1.55 mu m GaInNAs resonant-cavity-enhanced photodetector grown on GaAs
Qin Han,X. H. Yang,Zhichuan Niu,Haiqiao Ni,Yingqiang Xu,S. Y. Zhang,Yi Du,L. H. Peng,Huan Zhao,Cunzhu Tong,Ronghan Wu,Qingcui Wang +11 more
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TLDR
In this paper, the design, growth, fabrication, and characterization of a GaAs-based resonant-cavity-enhanced (RCE) GaInNAs photodetector operating at 1.55μm was reported.Abstract:
We report the design, growth, fabrication, and characterization of a GaAs-based resonant-cavity-enhanced (RCE) GaInNAs photodetector operating at 1.55μm. The structure of the device was designed using a transfer-matrix method (TMM). By optimizing the molecular-beam epitaxy growth conditions, six GaInNAs quantum wells were used as the absorption layers. Twenty-five (25)- and 9-pair GaAs∕AlAs-distributed Bragg reflectors were grown as the bottom and top mirrors. At 1.55μm, a quantum efficiency of 33% with a full width at half maximum of 10nm was obtained. The dark current density was 3×10−7A∕cm2 at a bias of 0V and 4.3×10−5A∕cm2 at a reverse bias of 5V. The primary time response measurement shows that the device has a rise time of less than 800ps.read more
Citations
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A multi-spectral and polarization-selective surface-plasmon resonant mid-infrared detector
TL;DR: In this paper, a surface-plasmonic resonant element was used for a multi-spectral polarization sensitive mid-infrared DWELL photodetector with tailorable frequency response and polarization selectivity.
Journal ArticleDOI
A multispectral and polarization-selective surface-plasmon resonant midinfrared detector
TL;DR: In this paper, a multispectral polarization sensitive midinfrared dots-in-a-well photodetector utilizing surface-plasmonic resonant elements, with tailorable frequency response and polarization selectivity, was demonstrated.
Journal ArticleDOI
Resonant cavity enhanced InAs∕In0.15Ga0.85As dots-in-a-well quantum dot infrared photodetector
R. S. Attaluri,Jiayi Shao,K. T. Posani,Sang Jun Lee,J. S. Brown,Andreas Stintz,Sanjay Krishna +6 more
TL;DR: In this article, the authors demonstrate the design, growth, fabrication, and characterization of resonant cavity enhanced InAs∕In0.15Ga0.85As dots-in-a-well (RC-DWELL) quantum dot infrared photodetector (QDIP) and compare it with a standard DWELL detector.
Journal ArticleDOI
GaAs-based room-temperature continuous-wave 1.59 {mu}m GaInNAsSb single-quantum-well laser diode grown by molecular-beam epitaxy
Z. C. Niu,S. Y. Zhang,H. Q. Ni,Donghai Wu,H. Zhao,H. L. Peng,Y. Q. Xu,S. Y. Li,Z. H. He,Z. W. Ren,Q. Han,X. H. Yang,Y. Du,R. H. Wu +13 more
TL;DR: The photoluminescence properties of 1.5μm range GaInNAsSb∕GaNAs QWs are quite comparable to the 1.3μm QWs, revealing positive effect of Sb on improving the optical quality of the QWs.
Patent
Multi-junction solar cell with dilute nitride sub-cell having graded doping
TL;DR: In this paper, a multi-junction solar cell with at least one dilute nitride sub-cell that has a variably doped base or emitter is disclosed.
References
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Journal ArticleDOI
GaInNAs: A Novel Material for Long-Wavelength-Range Laser Diodes with Excellent High-Temperature Performance
TL;DR: In this paper, a novel material, GaInNAs, that can be formed on GaAs to drastically improve the temperature characteristics in long-wavelength-range laser diodes is proposed.
Journal ArticleDOI
Resonant cavity enhanced photonic devices
M. Selim Ünlü,Samuel Strite +1 more
TL;DR: In this paper, the authors review the family of optoelectronic devices whose performance is enhanced by placing the active device structure inside a Fabry-Perot resonantmicrocavity.
Journal ArticleDOI
Low-threshold-current-density 1300-nm dilute-nitride quantum well lasers
TL;DR: In this paper, metalorganic chemical vapor deposition-grown In0.4Ga0.6As0.995N0.005 quantum well (QW) lasers have been realized, at an emission wavelength of 1.295 μm, with threshold and transparency current densities as low as 211 A/cm2 (for L=2000 μm) and 75 A/m2, respectively.
Journal ArticleDOI
GaInNAs resonant-cavity-enhanced photodetector operating at 1.3 μm
TL;DR: In this article, a GaAs-based p-i-n resonant-cavity-enhanced (RCE) GaInNAs photodetector operating near 1.3 μm was presented.
Journal ArticleDOI
Low-threshold-current 1.32-μm GaInNAs/GaAs single-quantum-well lasers grown by molecular-beam epitaxy
Wei Li,Tomi Jouhti,Changsi Peng,Janne Konttinen,Pekka Laukkanen,E.-M. Pavelescu,Mihail Dumitrescu,Markus Pessa +7 more
TL;DR: Using solid-source molecular-beam epitaxy with a rf-plasma source, a GaInNAs/GaAs single-quantum-well laser operating at 1.32 μm was developed in this paper.