Journal ArticleDOI
1.55μm GaNAsSb photodetector on GaAs
H. Luo,James A. Gupta,H. C. Liu +2 more
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TLDR
In this paper, a GaNAsSb p-i-n photodetector operating in the 1.55-μm-wavelength region is presented, which consists of two undoped 70-A GaN0.025As0.615Sb0.36 quantum wells sandwiched between p- and n- GaAs barriers grown by molecular-beam epitaxy on GaAs substrate.Abstract:
We report a GaNAsSb p-i-n photodetector operating in the 1.55-μm-wavelength region. The device consists of two undoped 70-A GaN0.025As0.615Sb0.36 quantum wells sandwiched between p- and n- GaAs barriers grown by molecular-beam epitaxy on GaAs substrate. At 1.55μm, responsivities of 0.016 and 0.01A∕W are demonstrated for as-deposited and annealed samples, respectively, which correspond to absorption coefficients of 1.3×104 and 0.82×104cm−1.read more
Citations
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Journal ArticleDOI
Semiconductor infrared up-conversion devices
TL;DR: In this paper, an integrated semiconductor photodetector-light-emitting diode (PD-LED) up-conversion device is proposed for infrared imaging applications.
Journal ArticleDOI
Effect of growth temperature on defect states of GaAsSbN intrinsic layer in GaAs∕GaAsSbN∕GaAs photodiode for 1.3μm application
Satrio Wicaksono,Soon Fatt Yoon,Wan Khai Loke,Kian Hua Tan,K. L. Lew,Malek Zegaoui,Jean-Pierre Vilcot,Didier Decoster,Jean Chazelas +8 more
TL;DR: In this paper, a GaAsSbN layer closely lattice matched to GaAs was used as an intrinsic layer (i layer) in a GAAs∕GaAs SbN ∕ GaAs p-i-n photodiode with response up to 1.3μm.
Journal ArticleDOI
Near-infrared photon upconversion devices based on GaNAsSb active layer lattice matched to GaAs
Y. Yang,Wenzhong Shen,H. C. Liu,S. R. Laframboise,Satrio Wicaksono,Soon Fatt Yoon,Kian Hua Tan +6 more
TL;DR: In this paper, a room-temperature full GaAs-based near-infrared (NIR) upconversion has been demonstrated by connecting lattice-matched GaNAsSb/GaAs p-i-n photodetectors in series with commercial GaAs/AlGaAs light-emitting diodes (LEDs).
Journal ArticleDOI
Effects of Ga- and Sb-precursor chemistry on the alloy composition in pseudomorphically strained GaAs1−ySby films grown via metalorganic vapor phase epitaxy
TL;DR: In this paper, the effect of Ga-and Sb-precursor chemistry and the growth temperature on the Sb incorporation efficiency in strain-relaxed and strained, pseudomorphic GaAs1−ySby films was studied using metalorganic vapor phase epitaxy.
Journal ArticleDOI
Identification of defect types in moderately Si-doped GaInNAsSb layer in p-GaAs/n- GaInNAsSb/n-GaAs solar cell structure using admittance spectroscopy
Muhammad Monirul Islam,Naoya Miyashita,Nazmul Ahsan,Takeaki Sakurai,Katsuhiro Akimoto,Yoshitaka Okada +5 more
TL;DR: In this paper, bias dependence of the admittance spectroscopy of GaInNAsSb-based solar cell structure has been performed to identify and characterize the type of defects.
References
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Journal ArticleDOI
GaInNAs: A Novel Material for Long-Wavelength-Range Laser Diodes with Excellent High-Temperature Performance
TL;DR: In this paper, a novel material, GaInNAs, that can be formed on GaAs to drastically improve the temperature characteristics in long-wavelength-range laser diodes is proposed.
Journal ArticleDOI
Resonant cavity enhanced photonic devices
M. Selim Ünlü,Samuel Strite +1 more
TL;DR: In this paper, the authors review the family of optoelectronic devices whose performance is enhanced by placing the active device structure inside a Fabry-Perot resonantmicrocavity.
Journal ArticleDOI
GaAs-based long-wavelength lasers
Victor M. Ustinov,A E Zhukov +1 more
TL;DR: In this paper, a review of recent achievements in the fabrication of diode lasers for the near-infrared range on GaAs substrates is presented, including material growth, optical properties and laser characteristics.
Journal ArticleDOI
Comparison of nitrogen incorporation in molecular-beam epitaxy of GaAsN, GaInAsN, and GaAsSbN
TL;DR: In this article, the incorporation of nitrogen in the low percentage range was investigated in a different III-V compound matrix, where the materials were grown by molecular-beam epitaxy with a nitrogen radio-frequency plasma source.