105W Highly Efficient Ku band GaN HEMT Power Amplifier
24 Feb 2018-pp 29-32
TL;DR: In this article, a single-stage GaN HEMT power amplifier using 20 mm bare die packaged GaN-HEMT device is discussed and the performance of the power amplifier is evaluated using an Inductor based equivalent bondwire array model.
Abstract: In this paper design and simulation of Ku band 105W highly efficient GaN HEMT power amplifier is presented A single stage design using 20 mm bare die packaged GaN HEMT device is discussed Inductor based equivalent bondwire array model is used for this design Simulated performance of power amplifier (PA) shows 105W output power with drain efficiency of 70% and power added efficiency (PAE) of 59% at design frequency of 1109 GHz Less than 05 dB variation in large signal gain is observed between 1002-1117 GHz band of frequency Proposed GaN HEMT power amplifier can be used to repalce conventional travelling wave tube amplifiers (TWTAs) used in Ku-band satellite communication
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TL;DR: Examples of broadband amplifiers, as well as several of the main areas of high-efficiency amplifier design-notably Class-D, Class-E, class-F, and Class-J approaches, Doherty PAs, envelope-tracking techniques, and Chireix outphasing are described.
Abstract: Gallium-nitride power transistor (GaN HEMT) and integrated circuit technologies have matured dramatically over the last few years, and many hundreds of thousands of devices have been manufactured and fielded in applications ranging from pulsed radars and counter-IED jammers to CATV modules and fourth-generation infrastructure base-stations. GaN HEMT devices, exhibiting high power densities coupled with high breakdown voltages, have opened up the possibilities for highly efficient power amplifiers (PAs) exploiting the principles of waveform engineered designs. This paper summarizes the unique advantages of GaN HEMTs compared to other power transistor technologies, with examples of where such features have been exploited. Since RF power densities of GaN HEMTs are many times higher than other technologies, much attention has also been given to thermal management-examples of both commercial “off-the-shelf” packaging as well as custom heat-sinks are described. The very desirable feature of having accurate large-signal models for both discrete transistors and monolithic microwave integrated circuit foundry are emphasized with a number of circuit design examples. GaN HEMT technology has been a major enabler for both very broadband high-PAs and very high-efficiency designs. This paper describes examples of broadband amplifiers, as well as several of the main areas of high-efficiency amplifier design-notably Class-D, Class-E, Class-F, and Class-J approaches, Doherty PAs, envelope-tracking techniques, and Chireix outphasing.
840 citations
"105W Highly Efficient Ku band GaN H..." refers methods in this paper
...There are various high power amplifiers presented in literature [4, 5, 6, 7] using GaN HEMTs....
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Book•
15 Jun 2009
TL;DR: A comprehensive and up-to-date treatment of RF and microwave transistor amplifiers is provided in this article, including modeling, analysis, design, packaging, and thermal and fabrication considerations.
Abstract: A Comprehensive and Up-to-Date Treatment of RF and Microwave Transistor Amplifiers This book provides state-of-the-art coverage of RF and microwave transistor amplifiers, including low-noise, narrowband, broadband, linear, high-power, high-efficiency, and high-voltage. Topics covered include modeling, analysis, design, packaging, and thermal and fabrication considerations. Through a unique integration of theory and practice, readers will learn to solve amplifier-related design problems ranging from matching networks to biasing and stability. More than 240 problems are included to help readers test their basic amplifier and circuit design skills-and more than half of the problems feature fully worked-out solutions. With an emphasis on theory, design, and everyday applications, this book is geared toward students, teachers, scientists, and practicing engineers who are interested in broadening their knowledge of RF and microwave transistor amplifier circuit design.
242 citations
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TL;DR: In this article, GaN high-power amplifiers have been produced with more than 100 W of power over multioctave bandwidths and with PAEs of more than 60%.
Abstract: GaN is now providing solid-state power amplifiers of higher efficiency, bandwidth, and power density than could be achieved only a few years ago. Novel circuit topologies combined with GaN's high-voltage capabilities and linearization are allowing GaN high-power amplifiers to simultaneously achieve both linearity and record high efficiency. GaN high-power amplifiers have been produced with more than 100 W of power over multioctave bandwidths and with PAEs of more than 60%. Narrower-band high-power amplifiers have been produced with PAEs of more than 90%.
26 citations
"105W Highly Efficient Ku band GaN H..." refers background in this paper
...Low output capacitance and drain-to-source resistance per watt also make GaN HEMTs suitable for switch-mode amplifiers [3]....
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...started to become commercially available in last decade [3]....
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...High operating voltage, higher power density, and higher thermal conductivity are major advantages which lead to extensive use of GaN devices in high power amplifiers [3]....
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TL;DR: In this paper, the design, implementation, and experimental results of a Ku-band 70W GaN-HEMT power amplifier (PA) for satellite communication are presented, where a two-stage design approach with two 250nm bare-die devices has been chosen to achieve a considerably high saturated gain of 15 dB over the whole extended Ku -band (13.75-14.5 GHz).
Abstract: In this paper the design, implementation, and experimental results of a Ku -band 70W GaN-HEMT power amplifier (PA) for satellite communication are presented. A two-stage design approach with two 250nm bare-die devices has been chosen to achieve a considerably high saturated gain of 15 dB over the whole extended Ku -band (13.75–14.5 GHz). The circuit was realized in a hybrid microwave integrated circuit technology on an alumina substrate. The PA shows a measured performance of more than 50W output power for a continuous-wave signal with a power-added efficiency (PAE) higher than 23%. Modulated measurements demonstrate an average output power of more than 30W (70W peak) and 21% PAE, while holding the Eutelsat linearity requirements.
19 citations
"105W Highly Efficient Ku band GaN H..." refers methods in this paper
...There are various high power amplifiers presented in literature [4, 5, 6, 7] using GaN HEMTs....
[...]
05 Jun 2011
TL;DR: In this article, a new matching circuit topology to control the reflection phase at the 2nd harmonic frequency (2fo) is applied to the power amplifier, and the measured power added efficiency (PAE) of 44.9% with the output power of 47.9 dBm (62.2W) is obtained in the 15GHz-band.
Abstract: Summary form only given, as follows. A Ku-band 60 W GaN power amplifier is presented. To obtain the high efficiency, new matching circuit topology to control the reflection phase at the 2nd harmonic frequency (2fo) is applied to the power amplifier. The measured power added efficiency (PAE) of 44.9% with the output power of 47.9 dBm (62.2W) is obtained in the 15GHz-band. To the best of our knowledge, the PAE is the highest of the Ku-band GaN power amplifiers reported to date.
18 citations