12.5 Gbit/s carrier-injection-based silicon micro-ring silicon modulators
TL;DR: A scheme for achieving high-speed operation for carrier-injection based silicon electro-optical modulator, which is optimized for small size and high modulation depth is shown.
Abstract: We show a scheme for achieving high-speed operation for carrier-injection based silicon electro-optical modulator, which is optimized for small size and high modulation depth. The performance of the device is analyzed theoretically and a 12.5-Gbit/s modulation with high extinction ratio >9dB is demonstrated experimentally using a silicon micro-ring modulator.
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TL;DR: The techniques that have, and will, be used to implement silicon optical modulators, as well as the outlook for these devices, and the candidate solutions of the future are discussed.
Abstract: Optical technology is poised to revolutionize short-reach interconnects. The leading candidate technology is silicon photonics, and the workhorse of such an interconnect is the optical modulator. Modulators have been improved dramatically in recent years, with a notable increase in bandwidth from the megahertz to the multigigahertz regime in just over half a decade. However, the demands of optical interconnects are significant, and many questions remain unanswered as to whether silicon can meet the required performance metrics. Minimizing metrics such as the device footprint and energy requirement per bit, while also maximizing bandwidth and modulation depth, is non-trivial. All of this must be achieved within an acceptable thermal tolerance and optical spectral width using CMOS-compatible fabrication processes. This Review discusses the techniques that have been (and will continue to be) used to implement silicon optical modulators, as well as providing an outlook for these devices and the candidate solutions of the future.
2,110 citations
TL;DR: An overview of the current state-of-the-art in silicon nanophotonic ring resonators is presented in this paper, where the basic theory of ring resonance is discussed and applied to the peculiarities of submicron silicon photonic wire waveguides: the small dimensions and tight bend radii, sensitivity to perturbations and the boundary conditions of the fabrication processes.
Abstract: An overview is presented of the current state-of-the-art in silicon nanophotonic ring resonators. Basic theory of ring resonators is discussed, and applied to the peculiarities of submicron silicon photonic wire waveguides: the small dimensions and tight bend radii, sensitivity to perturbations and the boundary conditions of the fabrication processes. Theory is compared to quantitative measurements. Finally, several of the more promising applications of silicon ring resonators are discussed: filters and optical delay lines, label-free biosensors, and active rings for efficient modulators and even light sources.
1,989 citations
10 Jun 2009
TL;DR: The current performance and future demands of interconnects to and on silicon chips are examined and the requirements for optoelectronic and optical devices are project if optics is to solve the major problems of interConnects for future high-performance silicon chips.
Abstract: We examine the current performance and future demands of interconnects to and on silicon chips. We compare electrical and optical interconnects and project the requirements for optoelectronic and optical devices if optics is to solve the major problems of interconnects for future high-performance silicon chips. Optics has potential benefits in interconnect density, energy, and timing. The necessity of low interconnect energy imposes low limits especially on the energy of the optical output devices, with a ~ 10 fJ/bit device energy target emerging. Some optical modulators and radical laser approaches may meet this requirement. Low (e.g., a few femtofarads or less) photodetector capacitance is important. Very compact wavelength splitters are essential for connecting the information to fibers. Dense waveguides are necessary on-chip or on boards for guided wave optical approaches, especially if very high clock rates or dense wavelength-division multiplexing (WDM) is to be avoided. Free-space optics potentially can handle the necessary bandwidths even without fast clocks or WDM. With such technology, however, optics may enable the continued scaling of interconnect capacity required by future chips.
1,959 citations
TL;DR: Results confirm the unique benefits for future generations of CMPs that can be achieved by bringing optics into the chip in the form of photonic NoCs, as well as a comparative power analysis of a photonic versus an electronic NoC.
Abstract: The design and performance of next-generation chip multiprocessors (CMPs) will be bound by the limited amount of power that can be dissipated on a single die We present photonic networks-on-chip (NoC) as a solution to reduce the impact of intra-chip and off-chip communication on the overall power budget A photonic interconnection network can deliver higher bandwidth and lower latencies with significantly lower power dissipation We explain why on-chip photonic communication has recently become a feasible opportunity and explore the challenges that need to be addressed to realize its implementation We introduce a novel hybrid micro-architecture for NoCs combining a broadband photonic circuit-switched network with an electronic overlay packet-switched control network We address the critical design issues including: topology, routing algorithms, deadlock avoidance, and path-setup/tear-down procedures We present experimental results obtained with POINTS, an event-driven simulator specifically developed to analyze the proposed idea, as well as a comparative power analysis of a photonic versus an electronic NoC Overall, these results confirm the unique benefits for future generations of CMPs that can be achieved by bringing optics into the chip in the form of photonic NoCs
873 citations
Cites background from "12.5 Gbit/s carrier-injection-based..."
...Injection-ejection blocking can be detrimental to the performance and may also cause deadlocks....
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...The source may then attempt transmission again and take advantage of PM in the network....
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TL;DR: Graphene is unlikely to replace silicon completely, however, because of the poor on/off current ratio resulting from its zero bandgap, but it could be used to improve silicon-based devices, in particular in high-speed electronics and optical modulators.
Abstract: As silicon-based electronics approach the limit of improvements to performance and capacity through dimensional scaling, attention in the semiconductor field has turned to graphene, a single layer of carbon atoms arranged in a honeycomb lattice. Its high mobility of charge carriers (electrons and holes) could lead to its use in the next generation of high-performance devices. Graphene is unlikely to replace silicon completely, however, because of the poor on/off current ratio resulting from its zero bandgap. But it could be used to improve silicon-based devices, in particular in high-speed electronics and optical modulators.
707 citations
References
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TL;DR: In this article, a numerical Kramers-Kronig analysis is used to predict the refractive index perturbations produced in crystalline silicon by applied electric fields or by charge carriers.
Abstract: A numerical Kramers-Kronig analysis is used to predict the refractive-index perturbations produced in crystalline silicon by applied electric fields or by charge carriers. Results are obtained over the 1.0-2.0 \mu m optical wavelength range. The analysis makes use of experimental electroabsorption spectra and impurity-doping spectra taken from the literature. For electrorefraction at the indirect gap, we find \Delta n = 1.3 \times 10^{5} at \lambda = 1.07 \mu m when E = 10^{5} V/cm, while the Kerr effect gives \Delta n = 10^{-6} at that field strength. The charge-carrier effects are larger, and a depletion or injection of 1018carriers/cm3produces an index change of \pm1.5 \times 10^{-3} at \lambda = 1.3 \mu m.
2,502 citations
TL;DR: Electro-optic modulators are one of the most critical components in optoelectronic integration, and decreasing their size may enable novel chip architectures, and here a high-speed electro-optical modulator in compact silicon structures is experimentally demonstrated.
Abstract: Metal interconnections are expected to become the limiting factor for the performance of electronic systems as transistors continue to shrink in size. Replacing them by optical interconnections, at different levels ranging from rack-to-rack down to chip-to-chip and intra-chip interconnections, could provide the low power dissipation, low latencies and high bandwidths that are needed. The implementation of optical interconnections relies on the development of micro-optical devices that are integrated with the microelectronics on chips. Recent demonstrations of silicon low-loss waveguides, light emitters, amplifiers and lasers approach this goal, but a small silicon electro-optic modulator with a size small enough for chip-scale integration has not yet been demonstrated. Here we experimentally demonstrate a high-speed electro-optical modulator in compact silicon structures. The modulator is based on a resonant light-confining structure that enhances the sensitivity of light to small changes in refractive index of the silicon and also enables high-speed operation. The modulator is 12 micrometres in diameter, three orders of magnitude smaller than previously demonstrated. Electro-optic modulators are one of the most critical components in optoelectronic integration, and decreasing their size may enable novel chip architectures.
2,336 citations
TL;DR: An approach based on a metal–oxide–semiconductor (MOS) capacitor structure embedded in a silicon waveguide that can produce high-speed optical phase modulation is described and an all-silicon optical modulator with a modulation bandwidth exceeding 1 GHz is demonstrated.
Abstract: Silicon has long been the optimal material for electronics, but it is only relatively recently that it has been considered as a material option for photonics1. One of the key limitations for using silicon as a photonic material has been the relatively low speed of silicon optical modulators compared to those fabricated from III–V semiconductor compounds2,3,4,5,6 and/or electro-optic materials such as lithium niobate7,8,9. To date, the fastest silicon-waveguide-based optical modulator that has been demonstrated experimentally has a modulation frequency of only ∼20 MHz (refs 10, 11), although it has been predicted theoretically that a ∼1-GHz modulation frequency might be achievable in some device structures12,13. Here we describe an approach based on a metal–oxide–semiconductor (MOS) capacitor structure embedded in a silicon waveguide that can produce high-speed optical phase modulation: we demonstrate an all-silicon optical modulator with a modulation bandwidth exceeding 1 GHz. As this technology is compatible with conventional complementary MOS (CMOS) processing, monolithic integration of the silicon modulator with advanced electronics on a single silicon substrate becomes possible.
1,612 citations
TL;DR: A brief historical summary of the development of the field of optical interconnects to silicon integrated circuits can be found in this paper, where the authors describe the evolution from early optical switching phenomena, through novel semiconductor and quantum well optical and optoelectronic physics and devices, to hybrid integrations of optical and silicon circuits.
Abstract: This paper gives a brief historical summary of the development of the field of optical interconnects to silicon integrated circuits. It starts from roots in early optical switching phenomena, proceeds through novel semiconductor and quantum well optical and optoelectronic physics and devices, first proposals for optical interconnects, and optical computing and photonic switching demonstrators, to hybrid integrations of optoelectronic and silicon circuits that may solve basic scaling and other problems for interconnections in future information processing and switching machines.
365 citations
TL;DR: It is shown that optical inter-channel crosstalk is negligible with 1.3-nm channel spacing and clean eye-diagrams are shown when each of the four micro-ring modulators is modulated at 4 Gbit/s.
Abstract: We experimentally demonstrate cascaded silicon micro-ring modulators as the key components of a WDM interconnection system. We show clean eye-diagrams when each of the four micro-ring modulators is modulated at 4 Gbit/s. We show that optical inter-channel crosstalk is negligible with a channel spacing of 1.3 nm.
307 citations