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128 x 128 CMOS Photodiode-Type Active Pixel Sensor with On-Chip Timing, Control and Signal

01 Feb 1995-
TL;DR: A 128 X 128 element CMOS active pixel image sensor with on-chip timing, control, and signal chain electronics has been designed, fabricated and tested.
Abstract: A 128 x 128 element CMOS active pixel image sensor (APS) with on-chip timing, control, and.
Citations
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DissertationDOI
01 Jan 2017
TL;DR: In this paper, the authors developed a data-driven scientific approach to reproduce surfaces composed of lambertian and glossy materials using the RTI technique with as few parameters as possible, which has been called eRTI (enhanced reflection transformation imaging).
Abstract: Images play a vital role in several fields of natural science research, including biology, physics, astrophysics, and computer science. In the natural sciences, images are commonly used in measurements or documentation; such applications include images made with telescopes, optical microscopes, or electron microscopes. In the humanities, images also play an important role in research. In art history, for example, many different types of images, from photos of small objects to three-dimensional reconstructions of buildings, help art historians to develop theories, to discuss them with other scholars, and to document the current state of artworks, e.g. in the process of restoration. This is particularly useful if the object is not easily accessible, in which case a common solution is to work with photographs. Digital photography has simplified the process of visual representation, because digital images can be easily shared and made accessible. However, when it comes to more complex kinds of artworks like mosaics, these static and two-dimensional images are not able to reproduce the actual visual impression of the object. Similar considerations apply to a variety of other artifacts, such as early prints, books, parchments, and textiles. The challenge in the digitization of of these objects lies in their complex surface properties and reflection behavior. A promising way to solve those limitations is the use of Reflectance Transformation Imaging. RTI is a set of computational photographic methods that capture a subject’s surface shape and color, making it possible to interactively re-light the subject from any direction by means of a mathematical model. The major drawback of RTI is the limitation of the applied mathematical model. Other drawbacks are the RTI imaging workflow and the fact that display of RTI requires a particular stand-alone application. In this thesis, the author developed a data-driven scientific approach to reproduce surfaces composed of lambertian and glossy materials using the RTI technique with as few parameters as possible. This new approach has been called eRTI (enhanced Reflection Transformation Imaging). Furthermore the hardware needed to acquire RTI and eRTI has been improved, by collaborating with a local Swiss firm to develop a novel solution for image acquisition. Lastly a web-based viewer has been developed, to render eRTI images in any standard web browser, even on most mobile devices. The qualities of eRTI have been tested using a novel approach that includes a quantitative and a qualitative method. The results show agreement between the techniques.

8 citations


Cites background from "128 x 128 CMOS Photodiode-Type Acti..."

  • ...18 shows the quantum efficiency for a 128x128 pixels CMOS APS sensor in 1995 [115]....

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  • ...18: Typical quantum efficiency for a CMOS sensor [115] This characteristic is a problem in normal cameras, since the extra wavelengths don’t provide useful information for standard photography....

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Journal Article
TL;DR: The technologies of charge-coupled device (CCD) and CMOS image sensors will be described and a review of the recent advancements and industry trends will be given.
Abstract: Electronic imaging systems based on solid-state image sensors have received tremendous attention in the past few years. The many advantages of the solid-state image sensors have opened up a wide variety of new imaging possibilities. Applications, ranging from high resolution, spaceborne electronic camera to PC peripheral camera, were costly, it not impossible, using the earlier technology. This paper will describe the technologies of charge-coupled device (CCD) and CMOS image sensors. A review of the recent advancements and industry trends will be given. Challenges in sensor performance, device scaling, and fabrication processes will also be discussed. The paper will conclude with a description of some applications and opportunities for the solid-state image sensors.

5 citations

Proceedings ArticleDOI
09 Dec 2004
TL;DR: The paper focuses on the topology of the differential pixel and the reset/read sequence required to acquire data from the pixel.
Abstract: A differential active pixel sensor in present day CMOS technologies is described. The primary goal of the architecture is to reduce visible noise artifacts in the output image. Artifacts caused by gain mismatches among pixel elements, kTC noise, fixed-pattern noise due to reset mismatches, and corrupted pixels are considered. The architecture enables scan-based image processing on the image at high data rates while allowing the use of low speed (compared to conventional architectures) components.

2 citations

Journal Article
TL;DR: In this paper, a pixel with local analog memory was designed, allowing efficient sensor global shutter operation and a multi-path readout architecture was developed, allowing an efficient use of the power consumption in sub-sampling modes.
Abstract: This article presents the design and realization of a CMOS digital image sensor optimized for button-battery powered applications. First, a pixel with local analog memory was designed, allowing efficient sensor global shutter operation. The exposure time becomes independent on the readout speed and a lower readout frequency can be used without causing image distortion. Second, a multi-path readout architecture was developed, allowing an efficient use of the power consumption in sub-sampling modes. These techniques were integrated in a 0.5 um CMOS digital image senor with a resolution of 648 by 648 pixels. The peak supply current is 7 mA for a readout frequency of 4 Mpixel/s at Vdd equals 3V. Die size is 55 mm2 and overall SNR is 55 dB. The global shutter performance was demonstrated by acquiring pictures of fast moving objects without observing any distortion, even at a low readout frequency of 4 MHz.

2 citations

Proceedings ArticleDOI
09 Jun 2011
TL;DR: In this article, a brief review is given of the image sensor developing and major adaptation circuit are review including source follower, direct injection, and capacitance trans impedance amplifier, which is a promising technique to build a low power, ultra small area, high precision pixel level AD convertor.
Abstract: Read out circuit is a critical component needed for infrared and visible light imaging system. Advances in image sensors and microelectronics have led to the development of digital read out fabricated using deep sub micro integrated circuit techniques. An brief review is given of the image sensor developing. Major adaptation circuit are review including source follower, direct injection, and capacitance trans impedance amplifier. On chip analog signal processing and analog to digital conversion techniques are also discussed. Noise shaping modulation is a promising technique to build a low power, ultra small area, high precision pixel level AD convertor.

1 citations


Cites methods from "128 x 128 CMOS Photodiode-Type Acti..."

  • ...The first highperformance PD-APS was demonstrated by Jet Propulsion Laboratory (JPL) in 1995 in a element array that had on-chip timing, control, correlated double sampling and fixed pattern noise (FPN) suppression circuitry([6])....

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  • ...CMOS image readout circuit was developed by Jet Propulsion Laboratory (JPL) column level circuits implementing delta-difference sampling([6])...

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References
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Journal ArticleDOI
TL;DR: In this article, the requirements for CMOS image sensors and their historical development, CMOS devices and circuits for pixels, analog signal chain, and on-chip analog-to-digital conversion are reviewed and discussed.
Abstract: CMOS active pixel sensors (APS) have performance competitive with charge-coupled device (CCD) technology, and offer advantages in on-chip functionality, system power reduction, cost, and miniaturization. This paper discusses the requirements for CMOS image sensors and their historical development, CMOS devices and circuits for pixels, analog signal chain, and on-chip analog-to-digital conversion are reviewed and discussed.

1,182 citations

Journal Article
TL;DR: In this article, the requirements for CMOS image sensors and their historical development, CMOS devices and circuits for pixels, analog signal chain, and on-chip analog-to-digital conversion are reviewed and discussed.
Abstract: CMOS active pixel sensors (APS) have performance competitive with charge-coupled device (CCD) technology, and offer advantages in on-chip functionality, system power reduction, cost, and miniaturization. This paper discusses the requirements for CMOS image sensors and their historical development, CMOS devices and circuits for pixels, analog signal chain, and on-chip analog-to-digital conversion are reviewed and discussed.

693 citations

Journal ArticleDOI
TL;DR: In this paper, CMOS Image Sensors are reviewed, providing information on the latest advances achieved, their applications, the new challenges and their limitations, leading to the State-of-the-art of CMOS image sensors.

546 citations

Journal ArticleDOI
TL;DR: In this paper, a family of CMOS-based active pixel image sensors (APSs) that are inherently compatible with the integration of on-chip signal processing circuitry is reported.
Abstract: A family of CMOS-based active pixel image sensors (APSs) that are inherently compatible with the integration of on-chip signal processing circuitry is reported. The image sensors were fabricated using commercially available 2-/spl mu/m CMOS processes and both p-well and n-well implementations were explored. The arrays feature random access, 5-V operation and transistor-transistor logic (TTL) compatible control signals. Methods of on-chip suppression of fixed pattern noise to less than 0.1% saturation are demonstrated. The baseline design achieved a pixel size of 40 /spl mu/m/spl times/40 /spl mu/m with 26% fill-factor. Array sizes of 28/spl times/28 elements and 128/spl times/128 elements have been fabricated and characterized. Typical output conversion gain is 3.7 /spl mu/V/e/sup -/ for the p-well devices and 6.5 /spl mu/V/e/sup -/ for the n-well devices. Input referred read noise of 28 e/sup -/ rms corresponding to a dynamic range of 76 dB was achieved. Characterization of various photogate pixel designs and a photodiode design is reported. Photoresponse variations for different pixel designs are discussed.

532 citations

Journal ArticleDOI
TL;DR: In this paper, a 2.0 /spl mu/m double-poly, double-metal foundry CMOS active pixel image sensor is reported, which uses TTL compatible voltages, low noise and large dynamic range, and is useful in machine vision and smart sensor applications.
Abstract: A new CMOS active pixel image sensor is reported. The sensor uses a 2.0 /spl mu/m double-poly, double-metal foundry CMOS process and is realized as a 128/spl times/128 array of 40 /spl mu/m/spl times/40 /spl mu/m pixels. The sensor features TTL compatible voltages, low noise and large dynamic range, and will be useful in machine vision and smart sensor applications. >

302 citations